IRF520, SiHF520

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

100

RDS(on) ()

VGS = 10 V

0.27

Qg (Max.) (nC)

16

Qgs (nC)

4.4

Qgd (nC)

7.7

Configuration

Single

Dynamic dV/dt Rating

Repetitive Avalanche Rated
175 C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC

Available

RoHS*
COMPLIANT

DESCRIPTION

TO-220AB

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

S
S
N-Channel MOSFET

ORDERING INFORMATION
Package

TO-220AB
IRF520PbF
SiHF520-E3
IRF520
SiHF520

Lead (Pb)-free
SnPb

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

VDS

100

Gate-Source Voltage

VGS

20

Continuous Drain Current

VGS at 10 V

TC = 25 C
TC = 100 C

Pulsed Drain Currenta

ID
IDM

Linear Derating Factor

UNIT
V

9.2
6.5

37
0.40

W/C

Single Pulse Avalanche Energyb

EAS

200

mJ

Repetitive Avalanche Currenta

IAR

9.2

Repetitive Avalanche Energya

EAR

6.0

mJ

Maximum Power Dissipation

TC = 25 C

Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque

for 10 s
6-32 or M3 screw

PD

60

dV/dt

5.5

V/ns

TJ, Tstg

- 55 to + 175
300d

10

lbf in

1.1

Nm

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 C, L = 3.5 mH, Rg = 25 , IAS = 9.2 A (see fig. 12).
c. ISD 9.2 A, dI/dt 110 A/s, VDD VDS, TJ 175 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91017
S11-0511-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF520, SiHF520
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER

SYMBOL

TYP.

MAX.

Maximum Junction-to-Ambient

RthJA

62

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

2.5

UNIT

C/W

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient

VDS

VGS = 0 V, ID = 250 A

100

VDS/TJ

Reference to 25 C, ID = 1 mA

0.13

V/C

VGS(th)

VDS = VGS, ID = 250 A

2.0

4.0

Gate-Source Leakage

IGSS

VGS = 20 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

25

VDS = 80 V, VGS = 0 V, TJ = 150 C

250

Gate-Source Threshold Voltage

0.27

gfs

VDS = 50 V, ID = 5.5 Ab

2.7

Input Capacitance

Ciss

VGS = 0 V,

360

Output Capacitance

Coss

VDS = 25 V,

150

Reverse Transfer Capacitance

Crss

f = 1.0 MHz, see fig. 5

34

Total Gate Charge

Qg

16

Gate-Source Charge

Qgs

4.4

Drain-Source On-State Resistance

Forward Transconductance

RDS(on)

ID = 5.5 Ab

VGS = 10 V

Dynamic

VGS = 10 V

ID = 9.2 A, VDS = 80 V,
see fig. 6 and 13b

Gate-Drain Charge

Qgd

7.7

Turn-On Delay Time

td(on)

8.8

Rise Time
Turn-Off Delay Time

pF

nC

tr

VDD = 50 V, ID = 9.2 A,

30

td(off)

Rg = 18 , RD = 5.2, see fig. 10b

19

20

4.5

7.5

9.2

37

1.8

110

260

ns

0.53

1.3

Fall Time

tf

Internal Drain Inductance

LD

Internal Source Inductance

LS

Between lead,
6 mm (0.25") from
package and center of
die contact

ns

nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 C, IS = 9.2 A, VGS = 0 Vb
TJ = 25 C, IF = 9.2 A, dI/dt = 100 A/sb

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.

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Document Number: 91017

S11-0511-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF520, SiHF520
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top

25 C

101

4.5 V
100

ID, Drain Current (A)

ID, Drain Current (A)

101

175 C

100
20 s Pulse Width
VDS = 50 V

20 s Pulse Width
TC = 25 C
10-1

100

101

VDS, Drain-to-Source Voltage (V)

91017_01

Fig. 1 - Typical Output Characteristics, TC = 25 C

ID, Drain Current (A)

101

4.5 V

100

20 s Pulse Width
TC = 175 C
10-1
91017_02

100

101

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 175 C

Document Number: 91017

S11-0511-Rev. B, 21-Mar-11

10

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

(Normalized)

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top

VGS, Gate-to-Source Voltage (V)

91017_03

3.0
2.5

ID = 9.2 A
VGS = 10 V

2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0

91017_04

20 40 60 80 100 120 140 160 180

TJ, Junction Temperature (C)

Fig. 4 - Normalized On-Resistance vs. Temperature

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This datasheet is subject to change without notice.

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IRF520, SiHF520
Vishay Siliconix

VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd

Capacitance (pF)

600

450

Ciss

300
Coss
150
Crss

101

ISD, Reverse Drain Current (A)

750

0
100

0.8

VDS = 80 V

VDS = 20 V

91017_06

12

16

1.2

10 s

100 s

10
5

1 ms

10 ms

QG, Total Gate Charge (nC)

TC = 25 C
TJ = 175 C
Single Pulse

0.1
0.1

20

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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1.1

102

For test circuit

see figure 13

1.0

VDS = 50 V

0.9

Operation in this area limited

by RDS(on)

16

0.7

VSD, Source-to-Drain Voltage (V)

103

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)

0.6

Fig. 7 - Typical Source-Drain Diode Forward Voltage

ID = 9.2 A

12

VGS = 0 V

91017_07

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

25 C
100

10-1
0.5

101

VDS, Drain-to-Source Voltage (V)

91017_05

175 C

91017_08

10

102

103

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

Document Number: 91017

S11-0511-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF520, SiHF520
Vishay Siliconix

RD
VDS

10

VGS

ID, Drain Current (A)

D.U.T.

RG

+
- VDD
10 V

Pulse width 1 s
Duty factor 0.1 %

Fig. 10a - Switching Time Test Circuit

2
VDS
0
25

50

75

100

125

150

90 %

175

TC, Case Temperature (C)

91017_09

10 %
VGS
td(on)

Fig. 9 - Maximum Drain Current vs. Case Temperature

td(off) tf

tr

Fig. 10b - Switching Time Waveforms

Thermal Response (ZthJC)

10

0 - 0.5
0.2
PDM

0.1
0.05
0.1

t1

0.02
0.01

10-2
10-5
91017_11

Single Pulse
(Thermal Response)

10-4

10-3

t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2

0.1

10

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91017

S11-0511-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF520, SiHF520
Vishay Siliconix

VDS

VDS

Vary tp to obtain
required IAS

tp
VDD
D.U.T

RG

+
-

IAS

V DD

VDS

10 V
0.01

tp

IAS

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

EAS, Single Pulse Energy (mJ)

600

ID
3.8 A
6.5 A
Bottom 9.2 A
Top

500
400
300
200
100
VDD = 25 V
0
25

91017_12c

50

75

100

125

175

150

Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.
50 k

QG

10 V

12 V

0.2 F
0.3 F

QGS

QGD

D.U.T.

VG

VDS

VGS
3 mA

Charge
IG
ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

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Fig. 13b - Gate Charge Test Circuit

Document Number: 91017

S11-0511-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF520, SiHF520
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+

D.U.T.

Circuit layout considerations

Low stray inductance
Ground plane
Low leakage inductance
current transformer

Rg

dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test

+
-

VDD

Driver gate drive

P.W.

Period

D=

P.W.
Period
VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery
current

Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage
Inductor current

VDD

Body diode forward drop

Ripple 5 %

ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91017.

Document Number: 91017

S11-0511-Rev. B, 21-Mar-11

www.vishay.com
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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information
www.vishay.com

Vishay Siliconix

TO-220-1
A

DIM.

Q
H(1)
D

L(1)

M*

b(1)

INCHES

MIN.

MAX.

MIN.

MAX.

4.24

4.65

0.167

0.183

0.69

1.02

0.027

0.040

b(1)

1.14

1.78

0.045

0.070

F
P

MILLIMETERS

0.36

0.61

0.014

0.024

14.33

15.85

0.564

0.624

9.96

10.52

0.392

0.414

2.41

2.67

0.095

0.105

e(1)

4.88

5.28

0.192

0.208

1.14

1.40

0.045

0.055

H(1)

6.10

6.71

0.240

0.264
0.115

J(1)

2.41

2.92

0.095

13.36

14.40

0.526

0.567

L(1)

3.33

4.04

0.131

0.159

3.53

3.94

0.139

0.155

2.54

3.00

0.100

0.118

ECN: X15-0364-Rev. C, 14-Dec-15

DWG: 6031
Note
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C

b
e
J(1)
e(1)

Package Picture
ASE

Revison: 14-Dec-15

Xian

Document Number: 66542

1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 13-Jun-16

Document Number: 91000