Professional Documents
Culture Documents
1.
Answer: 1 mA
Solution
: https://www.youtube.com/watch?v=VPgDje
UybI4
1992
1. An n-channel MOSFET having a threshold
voltage of 2 volts is used in the circuit shown in
figure. Initially the transistor is OFF and is in
steady state. At time t = 0, a step voltage of
magnitude of 4 volts is applied to the input so
that the MOSFET turns ON instantaneously.
Draw the equivalent circuit and calculate the
time taken to the output Vo to fall to 5 volts.
The device constant of the MOSFET, K = 5
mA/ V2, CDS =0 and CDG = 0.
1990
1. Which of the following effects can be
caused by a rise in the temperature ?
a. Increase in MOSFET current
b. Increase in BJT current
c. Decrease in MOSFET current
d. Decrease in BJT current
Answer: B & C
Solution
: https://www.youtube.com/watch?v=BoRoL
Q2eN6o
1991
1.
1.
1994
The threshold voltage of an n-channel
MOSFET can be increased by
a.
Increasing the channel dopant
concentration
b. Reducing the channel dopant
concentration
c.
Reducing the gate oxide thickness
d. Reducing the channel length
Answer: A
Solution
: https://www.youtube.com/watch?v=1C8Crs
Gguu0
: https://www.youtube.com/watch?v=Uc3Eu
Oto9Pk
1998
2.
3.
1.
a.
-5 volts and 0 volts
b. -5 volts and 5 volts
c.
0 volts and 3 volts
d. 3 volts and 5 volts
Answer: A
Solution
: https://www.youtube.com/watch?v=pHfKL4
yw4Ko
4.
A typical CMOS inverter has the voltage
transfer characteristic (VTC) curve as shown in
the figure.
Evaluate the value of the
inverter threshold VINV, which is the value of
the input at which Vo falls
by
Vo = VTn + VTp.
3.
Answer:
Solution
1999
1.
Answer:
Solution
0.156 Sec
: https://www.youtube.com/watch?v=0t8YIe
h7E_0
2001
1.
2.
2002
1.
2003
1.
2005
2004
1.
1.
Answer: C
Solution
: https://www.youtube.com/watch?v=lPY4Xz
AWeSg
2.
a.
b.
c.
d.
Answer: C
Solution
: https://www.youtube.com/watch?v=UYrsnuQIlU
2.
Answer: D
Solution
: https://www.youtube.com/watch?v=jmKFR
Cr0xa0
3. The drain of an N channel MOSFET is shorted
to the gate so that VGS = VDS. The threshold
voltage (VT) of MOSFET is 1 volt. If the drain
current (ID) is 1 mA for VGS = 2 volts, then for
VGS = 3 volts, ID is
a.
2 mA
b. 3 mA
c.
9 mA
d. 4 mA
Answer: D
Solution
: https://www.youtube.com/watch?v=F1cZOG
LgZIA
Answer: C
Solution
: https://www.youtube.com/watch?v=6fIMwx
zffIo
: https://www.youtube.com/watch?v=iwERJ
Kn2hUU
2.
2006
1.
2007
1.
Answer:
Solution
a.
0 Amp
b. 25 A
c.
45 A
d. 90 A
Answer: D
Solution
: https://www.youtube.com/watch?v=wtboLp
HXLOA
3. The figure shows the high frequency
capacitance voltage (C V) characteristics of
MOS capacitor having an area of 1x10-4 cm2.
Assume that the permittivity of silicon and
SiO2 are 1x10-12 and 3.5x10-13 F/cm
respectively.
i.
The gate oxide thickness in the
MOS capacitor is
a.
50 nm
b. 143 nm
c.
350 nm
d. 1 m
Answer: A
ii.
The maximum depletion layer
width in silicon is
a.
0.143 m
b. 0.857 m
c.
1 m
d. 1.143 m
Answer: B
iii.
Consider the following
statements about the C V characteristics plot
:
S1: The MOS capacitor has an N type
substrate
S2: If the positive charges are introduced in
the oxide, the C V plot will shift to the left.
Then which one of the following is TRUE .
a. Both S1 and S2 are TRUE
b. S1 is TRUE and S2 is FALSE
c. S1 is FALSE and S2 is
TRUE
d. Both S1 and S2 are FASLE
Answer: C
Answer: B
Solution
: https://www.youtube.com/watch?v=pYDNlQ
anv2g
3.
Solution
: https://www.youtube.com/watch?v=IKyIj6
hVTL8
Answer: B
Solution
: https://www.youtube.com/watch?v=CBXqcv
lx97A
2008
1.
2.
4.
Answer: A
Solution
: https://www.youtube.com/watch?v=KE_ML
vt-M-4
3.
a.
The sum of individual gms of the
transistors
b. The product of individual gms of the
transistors
c.
Nearly equal to the gm of M1
d. Nearly equal to gm1/gm2 of M2
Answer: C
Solution
: https://www.youtube.com/watch?v=oySwK
D3Vtjg
2009
1.
2.
Linked Questions:
Consider the CMOS circuit shown, where the
gate voltage VG of the N channel MOSFET is
increased from zero, while the gate voltage of
the P channel MOSFET is kept constant at 3
volts. Assume that, for both transistors, the
magnitude of the threshold voltage is 1 volts
and the product of the transconductance
parameter and the (W/L) ratio i.e. the quantity
cox(W/L) is 1 mA/V2.
i.
For small increase in
VG beyond 1 volt, which of the following gives
the correct description of the region of
operation of each MOSFET?
a.
Both are in saturation region
b. Both are in triode region
c.
NMOS is in triode region
and PMOS is in saturation region
d. NMOS is in saturation region
and PMOS is in triode region
Answer: D
ii.
Estimate the output voltage,
Vo for VG = 1.5 volts. (Hint: use the appropriate
current voltage equation for each MOSFET,
based on the answer to above question)
Answer: C
Solution
: https://www.youtube.com/watch?v=_BU3w
B8FoBA
Solution
: https://www.youtube.com/watch?v=4J00rS
wlU6U
2010
1.
2.
2012
1.
Answer: A
Solution
: https://www.youtube.com/watch?v=AOa8c
OFX7WA
2011
1.
a.
1 volt
b. 2 volts
c.
3 volts
d. 0.367 volts
Answer: C
2.
Answer: A
Solution
: https://www.youtube.com/watch?v=Geh8H
iqWIoU
3.
Hius8
2.
1.
i.
The gate source overlap
capacitance is approximately
a.
0.7 fF
b. 0.7 pF
c.
0.35 fF
d. 0.24 fF
Answer: A
ii. The source body capacitance
approximately
a.
2 fF
b. 7 fF
c.
2 pF
d. 7 pF
Answer: B
Solution
: https://www.youtube.com/watch?v=60X82
BxUfd8
2013
1.
Solution :
3.
1996
1.
2.
a.
b.
c.
d.
Answer: D
Solution
: https://www.youtube.com/watch?v=JWuL
Wh-pz1c
1.
1997
For a MOS capacitor fabricated on a P-type
semiconductor, strong inversion occurs when
a.
Surface potential is equal to Fermi
level
b. Surface potential is zero
c.
Surface potential is negative is
negative and equal to Fermi potential in
magnitude
d. Surface potential is positive and equal
to twice the Fermi potential
Answer: D
Solution
: https://www.youtube.com/watch?v=351Kp6NM-k
2.
3.
1.
Answer:
4.15 Volts, 11.68 k
Solution
: https://www.youtube.com/watch?v=Uc3Eu
Oto9Pk
1998
2001
a.
-5 volts and 0 volts
b. -5 volts and 5 volts
c.
0 volts and 3 volts
d. 3 volts and 5 volts
Answer: A
Solution
: https://www.youtube.com/watch?v=pHfKL4
yw4Ko
1999
1.
1.
2.
2002
1.
a.
0.5 mA
b. 2.0 mA
c.
3.5 mA
d. 4.0 mA
Answer: D
Solutoin
: https://www.youtube.com/watch?v=jvXncir
hK9c
2004
1.
2003
1.
Answer: C
Solution
: https://www.youtube.com/watch?v=lPY4Xz
AWeSg
2.
a.
b.
c.
d.
2005
1.
Answer: C
Solution
: https://www.youtube.com/watch?v=6fIMwx
zffIo
Answer: C
Solution
: https://www.youtube.com/watch?v=UYrsnuQIlU
2.
2007
1.
i.
The gate oxide thickness in the
MOS capacitor is
a.
50 nm
b. 143 nm
c.
350 nm
d. 1 m
Answer: A
ii.
The maximum depletion layer
width in silicon is
a.
0.143 m
b. 0.857 m
c.
1 m
d. 1.143 m
Answer: B
iii.
Consider the following
statements about the C V characteristics plot
:
S1: The MOS capacitor has an N type
substrate
S2: If the positive charges are introduced in
the oxide, the C V plot will shift to the left.
Then which one of the following is TRUE .
a. Both S1 and S2 are TRUE
b. S1 is TRUE and S2 is FALSE
c. S1 is FALSE and S2 is
TRUE
d. Both S1 and S2 are FASLE
Answer: C
Answer: C
Solution
: https://www.youtube.com/watch?v=iwERJ
Kn2hUU
2.
Solution
: https://www.youtube.com/watch?v=IKyIj6
hVTL8
a.
0 Amp
b. 25 A
c.
45 A
d. 90 A
Answer: D
Solution
: https://www.youtube.com/watch?v=wtboLp
HXLOA
3. The figure shows the high frequency
capacitance voltage (C V) characteristics of
MOS capacitor having an area of 1x10-4 cm2.
Assume that the permittivity of silicon and
2008
1.
Solution
: https://www.youtube.com/watch?v=6yl7336
P2kA
2.
Answer: B
Solution
: https://www.youtube.com/watch?v=pYDNlQ
anv2g
3.
Answer: B
Solution
: https://www.youtube.com/watch?v=CBXqcv
lx97A
4.
Answer: A
Solution
: https://www.youtube.com/watch?v=KE_ML
vt-M-4
a.
The sum of individual gms of the
transistors
b. The product of individual gms of the
transistors
c.
Nearly equal to the gm of M1
d. Nearly equal to gm1/gm2 of M2
Answer: C
Solution
: https://www.youtube.com/watch?v=oySwK
D3Vtjg
2009
1.
2.
3.
Linked Questions:
Consider the CMOS circuit shown, where the
gate voltage VG of the N channel MOSFET is
increased from zero, while the gate voltage of
the P channel MOSFET is kept constant at 3
volts. Assume that, for both transistors, the
magnitude of the threshold voltage is 1 volts
and the product of the transconductance
parameter and the (W/L) ratio i.e. the quantity
cox(W/L) is 1 mA/V2.
Answer: C
Solution
: https://www.youtube.com/watch?v=_BU3w
B8FoBA
2010
1.
2.
2011
1.
i. For small increase in VG beyond 1 volt,
which of the following gives the correct
Answer: A
Solution
: https://www.youtube.com/watch?v=Geh8H
iqWIoU
a.
1 volt
b. 2 volts
c.
3 volts
d. 0.367 volts
Answer: C
Solution
: https://www.youtube.com/watch?v=4J00rS
wlU6U
3.
2012
1.
Answer: A
Solution
: https://www.youtube.com/watch?v=AOa8c
OFX7WA
2.
i.
The gate source overlap
capacitance is approximately
a.
0.7 fF
b. 0.7 pF
c.
0.35 fF
d. 0.24 fF
Answer: A
ii. The source body capacitance
approximately
a.
2 fF
b. 7 fF
c.
2 pF
d. 7 pF
Answer: B
Solution
: https://www.youtube.com/watch?v=60X82
BxUfd8
Solution
: https://www.youtube.com/watch?v=xzUDu
BbZUXM
2013
1.
2.
2.
2014
Set 1 (15th February 2014 (Forenoon))
1.
2.
a.
0.625
b. 0.75
c.
1.125
d. 1.5
Answer: C
Solution
: https://www.youtube.com/watch?v=wsv90
UUqYVY
3.
4.
Answer: 0.9
Solution
: https://www.youtube.com/watch?v=abv9X
XV0jks
Answer: 1.5
Solution
: https://www.youtube.com/watch?v=AWde
mWJenw4
1.
3.
2015
1.
a.
b.
c.
d.
2.
3.
Answer: A
Solution
: https://www.youtube.com/watch?v=qi
pvNgPQNDM
is ____________
Answer: 4.33
Solution
:
https://www.youtube.com/watch?v=eIk6
sCXiKbY