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Outline
3.1. Two-Port Models
3.2. Frequency Response
3.3. Signal Flow
3.4. Common-Emitter/Source Transconductor
3.5. Common-Base/Gate Current Buffer
3.6. Common-Collector/Drain Voltage Follower
3.7. Summary
Page 1
Analog IC Design
Two-Port Models
Examples
Sample InputOutput Model
Sample Model:
Popular Model:
Page 2
Analog IC Design
1
sCSH
f=
2R SH CSH
= R SH
pC
v IN v O
ZC
= v INsC FF
v O =0
z FF =
GM
2CFF
= i GM i RO
v O =0
= i GM = v IN G M
Page 3
Analog IC Design
" f %
Phase RHP Zero = tan 1 $
'
# z RHP &
f=
2R LIMIT CSHUNT
= R LIMIT
z LIMIT
Page 4
Analog IC Design
C. Miller Split
iFF zRHP
C MI = (1+ A V ) C M A VC M
!
1 $
C MO = ##1+
&& C M C M
" AV %
v IN
v IN
v IN
1
1
=
=
=
iC ( v IN v O ) sC M ( v IN + v IN A V ) sC M s (1+ A V ) C M sC MI
vO rises when vIN hardly falls vO vIN rises nearly as much as vO.
(vO vIN)CM demands nearly as much current as vINCM.
Z MO
vO
vO
vO
1
1
=
=
=
#
sC MO
iC ( v O v IN ) sC M #
1 &
vO &
% vO +
( sC M s %1+
( CM
AV '
$
$ AV '
Page 5
1
.
2 Avg ( R EQ C EQ )
Analog IC Design
BJT
MOS
Common Collector/Drain
Base and gate are bad outputs When in use, they should be inputs.
Common Base/Gate
Collector and drain are bad inputs When in use, they should be outputs.
Page 6
Analog IC Design
B. Signal Flow
Possible Signal-Flow Paths
Base Input: Higher vB (+) raises vBE iC rises (+) iC lowers vC () and raises vE (+).
Depends on bias.
Page 7
Analog IC Design
B. Small-Signal Model
Equivalent Low-Frequency Two-Port Models
BJT
MOS
RIN:
r = 0/gm
RO when vin = 0:
ro = VA/IC
rds = 1/ID
GM when vo = 0:
gm = IC/Vt
gm = sqrt (2IDK'W/L)
Voltage Gain: A V0
v o v in G M ( R O || R LOAD )
=
= g m ( ro || R LOAD ) 50100 V/V
v in
v in
Example
Signal Propagation
v IN i D1 v O1 iC2 v O2 = v in id1 v o1 ic2 v o2
A V0
)(
)(
)(
)(
)(
)(
= g m1 rds1 || R D1 || r2 g m2 ro2 || R C2
Page 8
Analog IC Design
C. Frequency Response
Wide-Spectrum Model
Load
Load
Source
Source
RHP =
gm
2C
gm
Current
Feed-Forward
Current
CS, C, C and C, CLOAD shunt energy from vin and vo to establish poles.
Miller Split: Decompose C into CMI and CMO.
C MI = (1+ A V ) C = !"1+ G M ( R O || R LOAD )#$ C
'
*
!
1 $
1
C MO = #1+
, C
& C = )1+
)( G M ( R O || R LOAD ) ,+
" AV %
IN =
1
2(CS +C +C MI )( R S ||R IN )
Page 9
R S || R IN
Analog IC Design
Past pIN, CS + C + CMI shunt and replace RS and RIN RS and RIN disappear.
1
1
#
%
s
C
+ C
s C LOAD + $C CS + C &
LOAD
)} (
( G C
+
M
*
* C +C +C ) S ,
pO
2 CLOAD +C
R GM || R O || R LOAD
(CS + C ) + C
G M C
vo
vo
vo
(C + C ) + C
=
=
= S
#
&
iGM # v o ( Z S || Z ) &
G M C
C
%
(G M vo %
(G M
Z
+
Z
||
Z
C
+
C
+
C
%$ ( S ) ('
$% ( S
'
)
(
Case 2. If RS 1/gm, RLOAD ro, and CLOAD C: RCOCO can be the highest REQCEQ.
First pole occurs when CO shunts RCO, when 1/sCO RCO.
1
s (C MO + C LOAD ) p
O'
R O || R LOAD
Past pO', CMO + CLOAD shunt and replace RO and RLOAD RO and RLOAD disappear.
1
1
#
%
s
C
+
C
s$CS + C + (C C LOAD )&
( S + C )
Page 10
p IN'
1
2(CS +C +C )( R S ||R IN )
R S || R IN
Analog IC Design
Example
Objective: If RS = 100 k, vBS = 0, IC = ID = 25 A, 0 = 100, KN' = 100 A/V2,
VA = 1/ = 50 V, C = CGS = 100 fF, C = CGD = 10 fF, W = 20 m, L = 2 m,
RL = 100 k, and CL = 200 fF, determine AV0, fT, pIN, pO, and zRHP.
Solution:
BJT
MOS
BJT's r shunts RS and higher gm raises CMI in pIN, so BJT's pIN MOS's pIN.
Page 11
Analog IC Design
i. Small-Signal Model
BJT:
GM when vo = 0 RDEG || ro.
v be g m
ve
ro
v be g m
v be g m R DEG || ro
ro
i
GM
o =
v =0
v in
v be + v e
v be + v be g m R DEG || ro
!
$
ro
g m ##
&&
" ro + R DEG %
=
=
1+ g m R DEG || ro
)
igm >> iro
gm
gm
gm
!1
$
1+ g m R DEG
1+ ## + g m && R DEG
" ro
%
igm >> i
Where
"1
%
v e = v be $ + g m ' ( R DEG || ro ) v beg m ( R DEG || ro )
# r
&
BJT:
R IN =
( )
#
%
v in v be + v e i b r + i e R DEG i b r + $i b + i b r g m & R DEG
=
= r + 1+ r g m R DEG
i in
ib
ib
ib
in =0
= ro + g m ro ( R DEG || r ) + ( R DEG || r )
'
v o v in G M ( R O || R LOAD ) $ g m
=
&
) R LOAD
v in
v in
% 1+ g m R DEG (
Page 12
Analog IC Design
v o =0
io
=
v in
gm
gm
gm
(" 1
+
%
1+ g mb + g m R DEG
1+ *$$ + g mb '' + g m - R DEG
*)# rds
-,
&
Example
Signal Propagation: v IN v B iC v O = v in v b ic v o
A V0
" 1 %
r
v o " v b %" ic %" v o %
'' ( rds(PL) ) ds(PL)
= $ '$ '$ ' (1) $$
v in # v in &# v b &# ic &
rds(ND)
# rds(ND) &
r + (1+ g m r ) R D
R IN(DCE)
vb
=
v in R S + R IN(DCE) R S + r + (1+ g m r ) R D
=
ic
G M(DCE)
vb
r + 1+ g m r rds(ND)
R S + r + 1+ g m r rds(ND)
0 rds(ND)
R S + 0 rds(ND)
g m
g m
1
=
$
$
rds(ND)
1'
1'
1+ & g m + ) R D 1+ & g m + ) rds(ND)
ro (
ro (
%
%
vo
R L || R O(DCE) = rds(PL) || #$ro + g m ( r || R D ) ro + ( r || R D )%& rds(PL) || 0 ro rds(PL)
ic
Page 13
Analog IC Design
Depends on bias.
B. Small-Signal Model
v e = ( i i v eg m ) ro + i i R LOAD
" r + R LOAD % 1
R IN = r || R I = r || $ o
'>
# 1+ g m ro & g m
v r + R LOAD 1
>
RI e = o
1/gm if RLOAD << ro.
gm
ii
1+ g m ro
Non-degenerated
CE Load
RLOAD
Cases
Degenerated
CE Load
Equivalent Low-Frequency
Two-Port Model
ii
BJT
High
RI =
RI =
ro + R LOAD
1+ g m ro
ro + R LOAD
1+ g m ro
R LOAD =ro
2
Still Low
gm
Moderate to High
R LOAD g m ro ( r ||ro )
g m ro ( r || ro )
r || ro r
1+ g m ro
RIN is a loaded 1/gm resistance Often near 1/gm << r << ro and generally low.
Page 14
Analog IC Design
Gains:
A V0
A I0
i gm
i in
v o v in G M R O || R LOAD "
1%
=
= $$ g m + '' ro || R LOAD
ro &
v in
v in
#
)
"r +R
%,"
" v %" i %
1%
LOAD
= $$ in ''$$ gm '' = R S || R IN G M = +R S || r || $$ o
''.$$ g m + '' 1
ro &
+*
# i in &# v in &
# 1+ g m ro &.-#
A R0
v o " i gm %" v o % (
= $ '$ ' = R || R IN G M *+ R O || R LOAD ro || R LOAD
i in $# i in '&$# i gm '& ) S
Page 15
Analog IC Design
Example
Approach: Using two-port models.
Signal Propagation:
i IN v G i D v E iC v O = i in v g id v e ic v o
A R0
" r
+ RL %
v e id ( rds(CS) || R IN(CB) )
''
=
= rds(CS) || r(CB) || $$ o(CB)
id
id
# 1+ g m(CB)ro(CB) &
" r
%
+r
2
= rds(CS) || r(CB) || $$ o(CB) ds(PL) ''
# 1+ g m(CB)ro(CB) & g m(CB)
# 2 &#
1 &
((%% g m(CB) +
( ( ro(CB) || R L ) = 2R Sg m(CS) ( ro(CB) || rds(PL) )
A R0 ( R S ) (g m(CS) ) %%
ro(CB) ('
$ g m(CB) '$
i. Direct Translation
Norton two-port models are short-circuit translations.
Direct translations do not impose test conditions.
Direct translations for the current buffer:
(
" r + R LOAD %+
v in = v e = i in R IN(EQ) = i in ( R S || r || R GM(LD) ) = i in *R S || r || $ o
'# 1+ g m ro &,
)
! 1+ g m ro $
ve
= ve #
&
R GM(LD)
" ro + R LOAD %
! 1 $
! v $! i $! v $
&& R LOAD
A R0 = # in &# o &# o & = ( R S || r || R GM(LD) ) ##
" i in %" v in %" io %
" R GM(LD) %
Page 16
Analog IC Design
C. Frequency Response
CI CS || C
RCI RS || RIN
Wide-Spectrum Model
Load
CO C || CLOAD
RCO RLOAD || RC
Source
1
2 R C ||R LOAD C +CLOAD
)(
IN
1
#
1 &
2% R S || ((CS +C )
gm '
$
# r + Z LOAD &
1
R S || R IN = R S || r || % o
( R S ||
gm
$ 1+ g m ro '
1
<< R LOAD
s (C + C LOAD )
Page 17
g mr
< gm .
r + R B
Analog IC Design
Example
Objective: If RS = 100 k, vBS = 0, IC = ID = 25 A, 0 = 100, KN' = 100 A/V2,
VA = 1/ = 50 V, C = CGS = 100 fF, C = CGD = 10 fF, W = 20 m, L = 2 m,
RL = 100 k, and CL = 200 fF, determine AI0, pO, and pIN.
Solution:
gm = 980 S, 1/gm = 1.0 k, r = 100 k, and ro = 2 M.
BJT
VBIAS is constant.
VO(MIN) = VCE(MIN) or zero
and
Note Bulk Effect in vTN: VO(MAX) MOS = vIN vGS = vIN [vTN(f(vBS)) + VDS(SAT)]
ISOURCE(MAX) = f(iB or vIN vO and vBS) IBIAS
IPULL(MAX) IBIAS
Depends on bias.
Since IBIAS is nearly constant, vBE is constant vO "follows" vIN Voltage Follower.
Page 18
Analog IC Design
B. Small-Signal Model
BJT
MOS and BJT are similar, but r is absent and 1/gmb shunts ro.
vbs = vs = vo R GMB
vo
vo
1
=
=
i gmb v o g mb g mb
v be
+ v beg m
i
1
r
G M v =0 = o =
= + gm gm
o
r
v in
v be
v in =0
Where
R GM =
= ro || R GM || r = ro ||
1
1
|| r
gm gm
vo
ve
v
1
=
= e =
i gm v be g m v eg m g m
Voltage Gain:
A V0
&
#
v o v in G M R O || R LOAD #
1 &#
1
1 &
=
= %% g m + ((%% ro ||
|| r || R LOAD (( g m %% R LOAD || ((
r '$
gm
gm '
v in
v in
'
$
$
Page 19
Analog IC Design
Example
Approach: Using two-port models.
Signal Propagation:
i IN v B i E v O = i in v b ie v o
A R0
vb
= R S || R IN(CC) = R S || "#r + (1+ g m r ) ( R L || ro )$% = R S || "#r + (1+ 0 ) ( rds(NL) || ro )$% R S
i in
ie
1
G M(CC) = + g m g m
r
vb
If RS << RIN(CC).
"
%
vo
1
1
= R O(CC) || R L = $$ r ||
|| ro '' || rds(NL)
g
g
ie
#
&
m
m
A R0
" 1 %
v o " v b %" i e %" v o %
= $ '$ '$ ' R S g m $$ '' R S
i in $# i in '&$# v b '&$# i e '&
# gm &
( )( )
i. Direct Translation
A voltage follower outputs ie io = ie.
Current vbe/r reinforces vbegm gm(EFF) = 1/r + gm.
RLOAD degenerates gm(EFF) GM(DEG) = GM(DCE) with gm(EFF).
ie
= G M(DEG) =
vb
g m(EFF)
!
1$
1+ # g m(EFF) + & R LOAD
ro %
"
1
+ gm
r
=
!1
1$
1+ # + g m + & R LOAD
ro %
" r
,
)
1
.
+
+ gm
v
r
.R
A V0 o = G M(DEG) R LOAD = +
. LOAD
+ #1
v in
1&
+1+ % + g m + ( R LOAD .
ro '
* $ r
Page 20
Analog IC Design
C. Frequency Response
Wide-Spectrum Model
Source
Source
Load
Load
MOS and BJT are similar, but r is absent and 1/gmb shunts rds because vbs = vo.
C feed-forwards energy to vo to produce a zero.
iC reinforces igm In Phase In the left-half plane.
zLHP Location:
When iC ir + igm.
$1
'
i r + igm = v be & + g m ) v beg m
% r
(
C shunts vbe ZIN falls with frequency Capacitive effect.
iC = v besC z
LHP
gm
2C
CS, C, C and C, CLOAD shunt energy from vin and vo to establish poles.
Miller Split: Decompose C across non-inverting stage into CMI and CMO.
*, $
.,
'
gm
C MI = (1 A V ) C +1 &
)( R O || R LOAD )/ C << C
,- &%1+ g m ( ro || R LOAD ) )(
,0
"
1 %
C MO = $1
' C << C
# AV &
p IN
1
2R S (CS +C )
Page 21
Analog IC Design
sC LOAD
pO
gm'
2C LOAD
R LOAD || ( r + Z CI ) || R GM(DEG) || ro
1 r + Z CI
=
g m'
g m r
gm
pO'
2C LOAD
1
s (CS + C )
g m(S)
p IN'
2(CS +C )
R S || R B(DEG) R S
1
gm
1
g m(S)
Note pO is usually high and normally precedes zLHP's gm/C Polezero pair.
Example
Objective: If RS = 100 k, vBS = 0, IC = ID = 25 A, 0 = 100, KN' = 100 A/V2,
VA = 1/ = 50 V, C = CGS = 100 fF, C = CGD = 10 fF, W = 20 m, L = 2 m,
RL = 100 k, and CL = 200 fF, determine AV0, pIN, pO, and zLHP.
Solution:
BJT
MOS
Page 22
Analog IC Design
Transconductor
Voltage Follower
Current Buffer
gm
>>
1/r, gmb
1/gm
<<
r, 1/gmb
<<
Moderate
<<
High
B. Expressions
Small-Signal Translations:
RE/S and gmb degenerate vbe/gs's gm.
ic/d/s
G M(EQ) =
v b/g
gm
1
1+ g m + g mb + R E/S
ro
ie's vbe/r
reinforces vbegm.
1
gm +
r
ie
v
1
1
b
RE/S loads RB(EQ) and RC/D(EQ):
1+ g m + + g mb + R E/S
r
ro
vb
R B(EQ) r + (1+ g m r ) R E = r + (1+ 0 ) R E
ib
v c/d
R C/D(EQ) = ro + (g m' + g mb ) ro R E/S' + R E/S'
ic/d
R E/S' = R E/S || ( r + R B )
RC/D loads RE/S's 1/gm, r + RB shunts RE, and gmb reinforces gm:
r +R
v e/s
o
C/D
R E/S(EQ) =
|| ( r + R B )
ie/s
1+ (g m' + g mb ) ro
v eg m' =
v eg mr
r + R B
RGM
Page 23
Analog IC Design
Emitter/Source Resistance
Emitter/source's RGM resistance is a 1/gm translation.
r and RB shunt emitter's RGM.
Plain
Base Degeneration
Loading Effect
R GM || ( r + R B )
R GM || ( r + R B )
R GM || ( r + R B )
1
|| ( r + R B )
gm
r + R B
|| ( r + R B )
g m r
ro + R C
|| ( r + R B )
1+ g m ro
Plain RGM.
Degenerated RGM.
Loaded RGM.
Loaded RGM reduces to 2/gm when RC ro and to rX when RC gmrorX >> ro.
C. Small-Signal Analysis
Approach: Trace small-signal path and track voltagecurrent conversions.
Insightful Approach: Use direct translations.
Example: iin vg(CS) id(CS) ve(CB) ic(CB) vo1 ie(CC) vo
1
v o1
( rdsPL || R B(CC) ) R Sg mCSrdsPL
= ( R S ) (g mCS ) ( rdsCS || rCB || R GM(CB) )
i in
R GM(CB)
g mCC +
vo
rCC
r
=
1
dsNL
v o1
1
1
+
1+ g mCC +
rdsNL
rCC roCC
Where: R GM(CB) =
2
g mCB
Page 24
Analog IC Design
D. Noise Analysis
Refer measured non-degenerated noise current iN* to base or gate vB/G* with gm.
Translate forward vB/G* to collector/drain current iC/D*.
v B/G =
*
iN
gm
iC/D = v B/G G M
*
Degenerated Transistors:
Translate vB/G* to degenerated iC/D* with degenerated gm.
*
" i * %"
%
gm
iN
*
*
iC/D = v B/G G M $ N '$
'=
# g m &# 1+ g m R DEG & 1+ g m R DEG
* 2
* 2
* 2
* 2
(v ) + (v ) + (v ) +... + (v )
N1
N2
N3
N(K)
Example
Every component contributes noise to input-referred noise voltage vIN*.
v IN =
*
* 2
* 2
* 2
* 2
* 2
* 2
(v ) + (v ) + (v ) + (v ) + (v ) + (v )
NRS
* 2
NCS
* 2
NCB
* 2
NPL
NCC
NNL
v NCS =
*
iCS
g mCS
*
* 2
(v ) + (v ) + (v ) + (v )
NRS
NCS
NPL
NNL
+! 1 $
!i *$
! 1 $ ! i * $(
g mCB
*
-#
v NCB = # CB &G MCB #
& = # CB &*
&
" g mCS % " g mCB %*)1+ g mCB ( rCB || rdsCS ) -," g mCS %
" g mCB %
v NPL =
*
*
*
*
i PL R O1 i PL ( rdsPL || R B(CC) || R C(CB) ) i PL
A V1
g mCS ( rdsPL || R B(CC) )
g mCS
i * 1 i *
1
*
v NCC = CC
CC
g mCC A V1 g mCC g mCS ( rdsPL || R B(CC) )
suppresses
i * 1
1
*
* 1+ g mCC ( rdsNL || roCC )
v NNL = NL
i NL
g mCC
Page 25
Analog IC Design
E. Offset Analysis
Collector/drain voltage difference vC/D produces a small offset current iC/D.
Measured non-degenerated current mismatches iM* are usually 5%15%.
iM* and vC/D are small Treat as small signals.
Refer iM* to base or gate vB/G* with gm.
vC/D is systemic and iM* is random.
Linear and rootsquare sum: iOS = iOS(S) iOS*.
Degenerated Transistors:
Translate gate offset vB/G* to degenerated iC/D* with gm(DEG).
%I g m12
%I12
*
*
iOS = i12 12
=
g m12 1+ g m12 R 34 1+ g m12 R 34
Page 26