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OPA
843
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DESCRIPTION
12- to 16-bit converter interfaces will benefit from this combination of features. High-speed transimpedance applications
can be implemented with exceptional DC precision as well.
Differential configurations using two OPA843s can deliver
very low distortion to high output voltages, as shown below.
APPLICATIONS
ADC/DAC BUFFER AMPLIFIER
LOW DISTORTION IF AMPLIFIER
ACTIVE FILTERS
LOW-NOISE RECEIVER
WIDEBAND TRANSIMPEDANCE
TEST INSTRUMENTATION
PROFESSIONAL AUDIO
OPA643 UPGRADE
SINGLES
INPUT NOISE
VOLTAGE (nV/ Hz )
GAIN-BANDWIDTH
PRODUCT (MHz)
OPA842
OPA846
OPA847
2.6
1.2
0.85
200
1750
3900
+5V
OPA843
85
VI
50
1:1
132
402
40.2
402
RL
400
5V
40.2
VO = 10VI
+5V
GD = 10
RL = 400
F = 5MHz
90
95
2nd-Harmonic
100
3rd-Harmonic
105
OPA843
110
1
5V
10
Output Voltage Swing (Vp-p)
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ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.
NOTE: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those specified is not implied.
PACKAGE/ORDERING INFORMATION(1)
PRODUCT
PACKAGE-LEAD
PACKAGE
DESIGNATOR
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
MARKING
SO-8
40C to +85C
OPA843
OPA843ID
Rails, 100
"
"
"
"
OPA843IDR
SOT23-5
DBV
40C to +85C
OARI
OPA843IDBVT
"
"
"
"
OPA843IDBVR
OPA843
"
OPA843
"
ORDERING
NUMBER
TRANSPORT
MEDIA, QUANTITY
NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com.
PIN CONFIGURATIONS
NC
Inverting Input
+VS
Noninverting Input
Output
VS
NC
Output
VS
Noninverting Input
NC = No Connection
+VS
Inverting Input
OARI
3
SOT
NC
Top View
SO
Top View
OPA843
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SBOS268C
ELECTRICAL CHARACTERISTICS: VS = 5V
Boldface limits are tested at +25C.
At TA = +25C, VS = 5V, RF = 402, RL = 100, and G = +5, unless otherwise noted. See Figure 1 for AC performance.
OPA843ID, OPA843IDBV
TYP
PARAMETER
AC PERFORMANCE (see Figure 1)
Small-Signal Bandwidth (VO = 200mVPP)
Gain-Bandwidth Product
Bandwidth for 0.1dB Gain Flatness
Peaking at a Gain of +3
Harmonic Distortion
2nd-Harmonic
3rd-Harmonic
2-Tone, 3rd-Order Intercept
Input Voltage Noise
Input Current Noise
Rise-and-Fall Time
Slew Rate
Settling Time to 0.01%
0.1%
1.0%
Differential Gain
Differential Phase
DC PERFORMANCE(4)
Open-Loop Voltage Gain (AOL)
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
Input Bias Current Drift
Input Offset Current
Input Offset Current Drift
INPUT
Common-Mode Input Range (CMIR)(5)
Common-Mode Rejection (CMRR)
Input Impedance
Differential-Mode
Common-Mode
OUTPUT
Output Voltage Swing
Current Output
Closed-Loop Output Impedance
POWER SUPPLY
Specified Operating Voltage
Maximum Operating Voltage
Minimum Operating Voltage
Max Quiescent Current
Min Quiescent Current
Power-Supply Rejection Ratio
(+PSRR, PSRR)
THERMAL CHARACTERISTICS
Specified Operating Range: D, DBV
Thermal Resistance, JA
D
SO-8
DBV SOT23-5
CONDITIONS
+25C
+25C(1)
0C to
70C
40C to
+85C(2)
G = +3
G = +5
G = +10
G = +20
500
260
85
40
800
65
3.5
185
66
30
562
34
180
65
30
560
33
175
64
30
558
32
74
94
100
105
72
92
98
102
70
90
95
100
2.2
3.35
1.95
650
2.31
3.4
2.0
600
2.36
3.45
2.1
525
10
5.4
10.3
5.8
10.6
6.4
100
96
1.4
4
36
25
1.15
2
2.9
84
76
96
102
110
40
2.0
2.8
1.2
1000
10.5
7.5
3.2
0.001
0.012
VO = 0V
VCM = 0V
VCM = 0V
VCM = 0V
VCM = 0V
VCM = 0V
VCM = 0V
110
0.30
1.20
20
35
0.25
1.0
3.2
95
3.0
VCM = 0V
VCM = 0V
12 || 1
3.2 || 1.2
3.2
3.7
3.0
3.5
100
0.0001
85
UNITS
MIN/
MAX
TEST
LEVEL(3 )
MHz
MHz
MHz
MHz
MHz
MHz
dB
typ
min
min
min
min
min
typ
C
B
B
B
B
B
C
dBc
dBc
dBc
dBc
dBm
nV/Hz
pA/Hz
ns
V/s
ns
ns
ns
%
deg
max
max
max
max
typ
max
max
max
min
typ
max
max
typ
typ
B
B
B
B
C
B
B
B
B
C
B
B
C
C
92
1.5
4
37
25
1.17
2
dB
mV
V/C
A
nA/C
A
nA/C
min
max
max
max
max
max
max
A
A
B
A
B
A
B
2.8
82
V
dB
min
min
A
A
k || pF
M || pF
typ
typ
C
C
V
V
V
V
mA
min
min
min
min
min
typ
A
A
A
A
A
C
3.0
3.5
2.8
3.3
90
2.9
3.4
2.7
3.2
85
2.8
3.3
2.6
3.1
80
6
4
6
4
22.5
18.3
V
V
V
mA
mA
typ
max
min
max
min
C
A
A
A
A
85
dB
min
40 to +85
typ
125
150
C
C
typ
typ
C
C
5
VS = 5V
VS = 5V
20.2
20.2
20.8
19.6
6
4
22.2
19.1
100
90
88
Junction-to-Ambient
NOTES: (1) Junction temperature = ambient temperature for 25C min/max specifications. (2) Junction temperature = ambient at low temperature limit: junction
temperature = ambient +23C at high temperature limit for over temperature min/max specifications. (3) Test Levels: (A) 100% tested at 25C over-temperature
limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive outof-node. VCM is the input common-mode voltage. (5) Tested < 3dB below minimum specified CMRR at CMIR limits.
OPA843
SBOS268C
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TYPICAL CHARACTERISTICS: VS = 5V
TA = +25C, G = +5, RF = 402, RG = 100, and RL = 100, unless otherwise noted.
NONINVERTING SMALL-SIGNAL
FREQUENCY RESPONSE
6
VO = 0.2Vp-p
INVERTING SMALL-SIGNAL
FREQUENCY RESPONSE
3
G = +3
G = +5
0
3
G = +10
6
G = +20
9
12
RG = RS = 50
VO = 0.2Vp-p
6
9
G = 16
12
G = 32
15
15
See Figure 1
See Figure 2
18
18
106
17
14
107
109
108
106
107
Frequency (Hz)
NONINVERTING LARGE-SIGNAL
FREQUENCY RESPONSE
INVERTING LARGE-SIGNAL
FREQUENCY RESPONSE
21
RL = 100
G = +5V/V
0.2Vp-p
1Vp-p
2Vp-p
18
200mVp-p
to 1Vp-p
RL = 100
G = 8V/V
15
109
108
Frequency (Hz)
12
Gain (dB)
11
Gain (dB)
G = 4
G = 8
5Vp-p
8
2Vp-p
9
5Vp-p
6
3
0
2
3
See Figure 1
108
107
109
108
Frequency (Hz)
Frequency (Hz)
Right Scale
100
G = 8
1.2
0.8
0.4
100
Left Scale
200
0
0.4
0.8
200
Large Signal 1V
G = +5
200
Large Signal 1V
Right Scale
100
1.2
0.8
0.4
100
Left Scale
200
0
0.4
0.8
1.2
1.2
See Figure 2
See Figure 1
Time (2ns/div)
109
Time (2ns/div)
OPA843
www.ti.com
SBOS268C
107
See Figure 2
75
75
VO = 2Vp-p
G = +5
VO = 5Vp-p
G = +5
80
Harmonic Distortion (dBc)
80
85
2nd-Harmonic
90
95
100
3rd-Harmonic
105
85
90
2nd-Harmonic
95
100
3rd-Harmonic
105
See Figure 1
See Figure 1
110
110
100
150
200
250
300
350
400
450
500
100
150
200
Resistance ()
70
2nd-Harmonic
80
90
3rd-Harmonic
450
500
80
85
2nd-Harmonic
90
95
3rd-Harmonic
100
105
See Figure 1
See Figure 1
110
110
1
10
0.1
100
10
Frequency (MHz)
75
70
2nd-Harmonic
400
RL = 200
F = 5MHz
G = +5
75
VO = 2Vp-p
G = +5
RL = 200
0.1
350
100
300
Resistance ()
60
70
250
80
VO = 2Vp-p
RL = 200
F = 5MHz
RF = 402, RG Adjusted
90
100
3rd-Harmonic
10
15
95
105
3rd-Harmonic
115
5
20
10
15
20
25
30
35
40
Gain (V/V)
Gain (V/V)
OPA843
SBOS268C
VO = 2Vp-p
RL = 200
F = 5MHz
RG = 50, RF Adjusted
See Figure 2
See Figure 1
110
5
2nd-Harmonic
85
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2-TONE, 3RD-ORDER
INTERMODULATION INTERCEPT
55
PI
G = +5
Current Noise
50
2.8pA/Hz
Voltage Noise
2.0nV/Hz
50
PO
OPA843
50
50
402
45
100
40
35
30
25
102
103
104
105
106
107
10
15
20
25
30
0.30
0.20
NG = 4
NG = 4.5
0
0.10
NG = 5
0.20
NG = 5.5
0.30
55
60
65
70
1
G = 1
0
1
2
G = 2
3
4
External Compensation
See Figure 11
G = 3
6
1
10
100
1k
10
Frequency (MHz)
10
1
10
100
1k
G = +5
100
Frequency (MHz)
RS ()
50
VO = 200mVp-p
0.40
17
14
C = 10pF
C = 100pF
11
C = 22pF
VI
50
RS
VO
OPA843
CL
C = 47pF
1k
402
5
100
1k is optional.
2
106
1k
107
108
109
Frequency (Hz)
45
External Compensation
See Figure 10
0.10
40
0.40
35
Frequency (MHz)
Frequency (Hz)
OPA843
www.ti.com
SBOS268C
CMRR
80
PSRR
60
40
30
20log (AOL)
80
60
AOL
60
20
40
120
20
150
180
20
102
103
104
105
106
107
103
104
107
108
109
10
1
1W Internal
Power Limit
Output Impedance ()
RL = 100
RL = 50
RL = 25
1
1W Internal
Power Limit
OPA843
ZO
0.1
402
0.01
100
0.001
0.0001
0.00001
0.1
0.05
0.05
0.1
102
0.15
103
104
106
107
108
RL = 100
G=5
See Figure 1
0.8
0.6
0.4
0.2
0.2
0.4
0.6
4
5
Input
Right Scale
105
Frequency (Hz)
IO (mA)
1
RL = 100
G = 8
See Figure 2
Input
Right Scale
0.6
0.2
0
1
0.8
0.4
0
Output
Left Scale
0.2
0.4
0.6
0.8
0.8
Time (40ns/div)
1
Time (40ns/div)
OPA843
SBOS268C
106
105
Frequency (Hz)
4
0.15
102
Frequency (Hz)
210
101
108
101
90
Open-Loop Phase ()
100
100
VO (V)
+PSRR
120
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SETTLING TIME
0.20
0.15
0.1
G = +4
0.10
0.05
0
0.05
0.10
0.15
0.015
0.075
dP, Negative Video
0.01
0.05
dP, Positive Video
0.005
0.025
dG, Positive Video
0.20
See Figure 1
0.25
0
0
10
15
20
25
Time (ns)
VIO
0
0
100 x IOS
0.5
12.5
IB
12.5
25
50
75
100
22
106
20
98
19
Sinking Output Current
94
18
90
125
17
50
25
25
50
75
100
125
6
Impedance Magnitude (20log ())
Positive Input
4
Voltage Range (V)
21
Supply Current
102
25
0
110
0.5
25
25
50
3
Video Loads (150 each)
2
Positive Output
0
2
Negative Output
4
Negative Input
Common-Mode
106
105
Differential
104
103
102
6
3
103
104
105
106
107
108
Frequency (Hz)
OPA843
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SBOS268C
0.02
RL = 100
VO = 2V step
G = +5
Differential Phase ()
0.25
DIFFERENTIAL PERFORMANCE
TEST CIRCUIT
DIFFERENTIAL SMALL-SIGNAL
FREQUENCY RESPONSE
3
VO = 400mVp-p
+5V
GD = 5
0
OPA843
RG
100
VI
RG
100
RF
GD =
100
5V
RF
RL
RF
VO
+5V
GD = 10
GD = 16
6
GD = 32
9
12
15
OPA843
18
1
10
DIFFERENTIAL LARGE-SIGNAL
FREQUENCY RESPONSE
VO = 400mVp-p to 5Vp-p
17
VO = 8Vp-p
14
11
VO = 4Vp-p
GD = 10
F = 5MHz
75
20
Gain (dB)
1k
23
GD = 10V/V
100
Frequency (MHz)
5V
80
85
2nd-Harmonic
90
95
100
3rd-Harmonic
105
110
8
10
100
10
200
100
60
GD = 10
RL = 400
F = 5MHz
85
Gain (dB)
80
VO = 4Vp-p
GD = 10
RL = 400
70
1k
Load Resistance ()
Frequency (MHz)
80
2nd-Harmonic
90
100
90
95
2nd-Harmonic
100
3rd-Harmonic
105
110
3rd-Harmonic
110
115
10
20
Frequency (Hz)
OPA843
SBOS268C
10
Output Voltage Swing (Vp-p)
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APPLICATIONS INFORMATION
+5V
+5V
+VS
0.1F
2.2F
50 Source
VIN
50
RS 50 Load
50
VO
OPA843
RF
402
RG
100
0.1F
2.2F
VS
5V
0.1F
RT
50 Source
RS 50 Load
50
VO
OPA843
2.2F
RF
402
RG
50
VI
RM
(optional)
0.1F
2.2F
5V
10
OPA843
www.ti.com
SBOS268C
+5V
Power-supply decoupling
not shown.
0.01F
10k
5V
+5V
50 Source
ID
Power-supply
decoupling not shown.
VO = IDRF
OPA843
RF
10k
CF
0.75pF
CD
20pF
0.01F
PI
VO
52.3
1k
OPA843
+5V
RS 50 Load
50
P0
VB
RF
1k
1
=
2RF CF
RG
144
GBP
4 RF CS
CS = CD + CI
(1)
0.01F
1
PI
RF
Gain = P = 20log 2 1 + R dB = 12dB with values shown
O
G
(2)
OPA843
SBOS268C
GBP
Hz
2RF CS
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11
100pF
0
Source
VI
61
150
VO
220pF
OPA843
402
100
+5V
0.1F
81.8
OPA843
VO = (V1 + V2 + V3 + V4)
Gain (dB)
0
3
6
5V
402
RF
402
12
V1
15
100k
402
1M
V2
402
100M
V3
402
V4
12
10M
Frequency (MHz)
DESIGN-IN TOOLS
DEMONSTRATION FIXTURES
Two printed circuit boards (PCBs) are available to assist in
the initial evaluation of circuit performance using the OPA843
in its two package options. Both of these are offered free of
charge as unpopulated PCBs, delivered with a user's guide.
The summary information for these fixtures is shown in the
table below.
PRODUCT
PACKAGE
ORDERING
NUMBER
LITERATURE
NUMBER
OPA843U
OPA843N
SO-8
SOT23-5
DEM-OPA-SO-1A
DEM-OPA-SOT-1A
SBOU009
SBOU010
OPA843
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SBOS268C
+5V
+5V
VCC
VCC
OPA843
OPA843
Power-supply
decoupling not shown.
VEE
VEE
5V
R4
600
C2
41.125pF
5V
RF
1.2k
R1
120
VOUT
RLOAD
1k
R2
1.2k
VIN
C1
5.2pF
RG
R5
1.2k
40
(dB)
20
20
40
100kHz
1MHz
10MHz
100MHz
1GHz
Frequency
OPERATING SUGGESTIONS
BANDWIDTH vs GAIN
OPA843
SBOS268C
www.ti.com
13
+5V
Power-supply
decoupling not shown.
280
0.1F
OPA843
VO
5V
RF
806
402
V1
RS = 0
CS
12.6pF
CF
1.9pF
+5V
50 Source
VI
RT
50
R1
133
VO
RS
50
OPA843
50 Load
+5V
RF
402
RG
402
14
Z0 =
GBP
NG1
NG1
1
1 2
2
NG
NG
2
2
NG 1
(11)
OPA843
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SBOS268C
1
2RF Z0 NG2
(12)
(13)
(14)
For the values shown in Figure 10, the f3dB will be approximately 105MHz. This is less than that predicted by simply
dividing the GBP product by NG1. The compensation network
controls the bandwidth to a lower value while providing full
slew rate and exceptional distortion performance due to increased loop gain at frequencies below NG1 Z0. The capacitor values shown in Figure 10 are calculated for NG1 = 3 and
NG2 = 7.5 with no adjustment for parasitics.
DISTORTION PERFORMANCE
The OPA843 is capable of delivering an exceptionally low
distortion signal at high frequencies and medium gains. The
distortion plots in the Typical Characteristics show the typical
distortion under a wide variety of conditions. Most of these
plots are limited to 100dB dynamic range. The OPA843s
distortion does not rise above 100dBc until either the signal
level exceeds 0.5Vp-p and/or the fundamental frequency
exceeds 500kHz.
Distortion in the audio band is < 120dBc.
Generally, until the fundamental signal reaches very high
frequencies or powers, the 2nd-harmonic will dominate the
distortion with a negligible 3rd-harmonic component. Focusing then on the 2nd-harmonic, increasing the load impedance improves distortion directly. Remember that the total
load includes the feedback networkin the noninverting
configuration this is the sum of RF + RG, whereas in the
inverting configuration this is just RF (see Figure 1). Increasing output voltage swing increases harmonic distortion directly. A 6dB increase in output swing will generally increase
OPA843
SBOS268C
www.ti.com
15
the 2nd-harmonic 12dB and the 3rd-harmonic 18dB. Increasing the signal gain will also increase the 2nd-harmonic
distortion. Again, a 6dB increase in gain will increase the
2nd- and 3rd-harmonic by 6dB even with a constant output
power and frequency. Finally, the distortion increases as the
fundamental frequency increases due to the roll off in the
loop gain with frequency. Conversely, the distortion will
improve going to lower frequencies down to the dominant
open-loop pole at approximately 3kHz. Starting from the
100dBc 2nd-harmonic for 2VPP into 200, G = +5 distortion
at 500kHz (from the Typical Characteristics), the 2nd-harmonic distortion at 20kHz should be approximately:
shows the general form for this output noise voltage using the
terms presented in Figure 12.
EO =
(E
2
NI
ENI
4kTRS
4kT
RG
16
RF
RG
IBI
4kTRF
4kT = 1.6E 20J
at 290K
4kTRF
I R
2
EN = ENI
+ (IBN RS )2 + 4kTRS + BI F +
NG
NG
(16)
Evaluating these two equations for the OPA843 circuit presented in Figure 1 will give a total output spot noise voltage
of 12.4nV/Hz and an equivalent input spot noise voltage of
2.48nV/Hz.
DC OFFSET CONTROL
The OPA843 can provide excellent DC signal accuracy due to
its high open-loop gain, high common-mode rejection, high
power supply rejection, and low input offset voltage and bias
current offset errors. To take full advantage of this low input
offset voltage, careful attention to input bias current cancellation is also required. The high-speed input stage for the
OPA843 has a relatively high input bias current (20A typical
into the pins) but with a very close match between the two
input currentstypically 0.17A input offset current. Figures
13 and 14 show typical distribution of input offset voltage and
current for the OPA843.
1000
NOISE PERFORMANCE
800
Mean = 0.38mV
Standard Deviation = 0.31mV
Total Count = 5572
Count
700
600
500
400
300
200
100
0
< 1.20
< 1.08
< 0.96
< 0.84
< 0.72
< 0.60
< 0.48
< 0.36
< 0.24
< 0.12
< 0.00
<0.12
<0.24
<0.36
<0.48
<0.60
<0.72
<0.84
<0.96
<1.08
<1.20
>1.20
IBN
ERS
900
EO
OPA843
RS
mV
OPA843
www.ti.com
SBOS268C
1600
1400
+5V
VCC
Mean = 0.04A
Standard Deviation = 0.17A
Total Count = 5572
Power-supply decoupling
not shown.
1200
Count
200
0.1F
1000
OPA843
800
VEE
5V
600
+5V
RG
250
400
RF
1k
VIN
200
5k
0
< 1.00
< 0.90
< 0.80
< 0.70
< 0.60
< 0.50
< 0.40
< 0.30
< 0.20
< 0.10
< 0.00
<0.10
<0.20
<0.30
<0.40
<0.50
<0.60
<0.70
<0.80
<1.90
<1.00
>1.00
20k
10k
0.1F
mV
5k
FIGURE 14.
VO
VIN
RF
RG
= 4
5V
THERMAL ANALYSIS
The OPA843 will not require heat sinking or airflow in most
applications. Maximum desired junction temperature would
set the maximum allowed internal power dissipation as
described below. In no case should the maximum junction
temperature be allowed to exceed +150C.
Operating junction temperature (TJ ) is given by TA + PD JA.
The total internal power dissipation (PD) is the sum of quiescent
power (PDQ) and additional power dissipated in the output
stage (PDL) to deliver load power. Quiescent power is simply
the specified no-load supply current times the total supply
voltage across the part. PDL will depend on the required output
signal and load but would, for a grounded resistive load, be at
a maximum when the output is fixed at a voltage equal to 1/2
of either supply voltage (for equal bipolar supplies). Under this
worst-case condition, PDL = VS2/(4 RL), where RL includes
feedback network loading.
Note that it is the power in the output stage and not in the
load that determines internal power dissipation.
As a worst-case example, compute the maximum TJ using an
OPA843IDBV (SOT23-5 package) in the circuit of Figure 1
operating at the maximum specified ambient temperature of
+85C. PD = 10V(22.5mA) + 52/(4 (100 || 500)) = 300mW.
Maximum TJ = +85C + (0.30W 150C/W) = 130C.
OPA843
SBOS268C
VO
www.ti.com
17
BOARD LAYOUT
Achieving optimum performance with a high-frequency amplifier such as the OPA843 requires careful attention to board
layout parasitics and external component types. Recommendations that will optimize performance include:
a) Minimize parasitic capacitance to any AC ground for
all of the signal I/O pins. Parasitic capacitance on the
output and inverting input pins can cause instability: on the
noninverting input, it can react with the source impedance to
cause unintentional bandlimiting. To reduce unwanted capacitance, a window around the signal I/O pins should be
opened in all of the ground and power planes around those
pins. Otherwise, ground and power planes should be unbroken elsewhere on the board.
b) Minimize the distance (< 0.25") from the power-supply
pins to high-frequency 0.1F decoupling capacitors. At
the device pins, the ground and power-plane layout should
not be in close proximity to the signal I/O pins. Avoid narrow
power and ground traces to minimize inductance between
the pins and the decoupling capacitors. The power-supply
connections should always be decoupled with these capacitors. Larger (2.2F to 6.8F) decoupling capacitors, effective
at lower frequency, should also be used on the main supply
pins. These may be placed somewhat farther from the device
and may be shared among several devices in the same area
of the PC board.
c) Careful selection and placement of external components will preserve the high-frequency performance of
the OPA843. Resistors should be a very low reactance type.
Surface-mount resistors work best and allow a tighter overall
layout. Metal-film and carbon composition, axially-leaded
resistors can also provide good high-frequency performance.
Again, keep their leads and PC board trace length as short
as possible. Never use wire-wound type resistors in a highfrequency application. Since the output pin and inverting
input pin are the most sensitive to parasitic capacitance,
always position the feedback and series output resistor, if
any, as close as possible to the output pin. Other network
components, such as noninverting input termination resistors, should also be placed close to the package. Where
double-feedback side component mounting is allowed, place
the feedback resistor directly under the package on the other
side of the board between the output and inverting input pins.
Even with a low parasitic capacitance shunting the external
resistors, excessively high resistor values can create significant time constants that can degrade performance. Good
axial metal-film or surface-mount resistors have approximately 0.2pF in shunt with the resistor. For resistor values
18
OPA843
www.ti.com
SBOS268C
50 Source
+VCC
+5V
125
Power-supply
decoupling not shown.
50
External
Pin
Internal
Cicuitry
50 D1
D2
50
VCC
RG
126
5V
VO
RF
505
OPA843
SBOS268C
OPA843
www.ti.com
19
Revision History
DATE
REVISION
PAGE
12/08
3/06
13
SECTION
DESCRIPTION
Absolute Maximum Ratings Changed minimum Storage Temperature Range from 40C to 65C.
Design-In Tools
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
20
OPA843
www.ti.com
SBOS268C
www.ti.com
10-Jun-2014
PACKAGING INFORMATION
Orderable Device
Status
(1)
Eco Plan
Lead/Ball Finish
(2)
(6)
(3)
Op Temp (C)
Device Marking
(4/5)
OPA843ID
ACTIVE
SOIC
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
OPA
843
OPA843IDBVR
ACTIVE
SOT-23
DBV
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
OARI
OPA843IDBVT
ACTIVE
SOT-23
DBV
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
OARI
OPA843IDBVTG4
ACTIVE
SOT-23
DBV
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
OARI
OPA843IDG4
ACTIVE
SOIC
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
OPA
843
OPA843IDR
ACTIVE
SOIC
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
OPA
843
OPA843IDRG4
ACTIVE
SOIC
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
OPA
843
(1)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
Addendum-Page 1
Samples
www.ti.com
10-Jun-2014
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
14-Jul-2012
Device
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
OPA843IDBVR
SOT-23
DBV
3000
180.0
OPA843IDBVT
SOT-23
DBV
250
OPA843IDR
SOIC
2500
B0
(mm)
K0
(mm)
P1
(mm)
8.4
3.2
3.1
1.39
4.0
180.0
8.4
3.2
3.1
1.39
330.0
12.4
6.4
5.2
2.1
Pack Materials-Page 1
W
Pin1
(mm) Quadrant
8.0
Q3
4.0
8.0
Q3
8.0
12.0
Q1
14-Jul-2012
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
OPA843IDBVR
SOT-23
DBV
3000
210.0
185.0
35.0
OPA843IDBVT
SOT-23
DBV
250
210.0
185.0
35.0
OPA843IDR
SOIC
2500
367.0
367.0
35.0
Pack Materials-Page 2
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