Thyristor

SMD Type
SCR Thyristor
BT169 (KT169)

1.70

Features

0.1

Repetitive peak off-state voltages :400V

Average on-state current :0.5A
RMS on-state current :0.8A

0.42 0.1

0.46 0.1

Non-repetitive peak on-state current :8A

1:GATE
2:ANODE
3:CATHODE

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Peak Repetitive Forward and Reverse Blocking

BT169-400
Voltages

VDRM VRRM

400

IT(AV)

0.5

IT(RMS)

0.8

Average on-state Current

Forward Current RMS
Non-Repetitive Peak on-state Current (t=10ms)
Non-Repetitive Peak on-state Current (t=8.3ms)
Circuit Fusing Considerations (t = 10ms)

ITSM

It

0.32

A 2s

dIT/dt

50

A/us

IGM

Peak Gate Voltage

VGM

Peak Gate Voltage Reverse

VGRM

Peak Gate Power Forward

PGM

PGF(AV)

0.1

Thermal Resistance Junction to Ambient

RthJA

150

Thermal Resistance Junction to Case

RthJC

60

Repetitive Rate of rise of on-state Current after Triggering

Peak Gate Current

Average Gate Power Forward

Junction Temperature
Storage Temperature Range

TJ

125

Tstg

-40 to 150

V
W
K/W

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Thyristor

SMD Type
SCR Thyristor
BT169 (KT169)
Electrical Characteristics (Ta = 25, unless otherwise noted.)
Parameter

Symbol

Peak Repetitive Forward and Reverse

Blocking Voltages

Test Conditions

VDRM VRRM IDRM=IRRM50uA

Typ.

Max

400

ID,IR

VDRM=VRRM(max);Tj=125; RGK=1k

0.1

On-state Voltage

VTM

IT=1A

1.5

Gate Trigger Voltage

VGT

Gate Trigger Current (Continuous dc)

IGT

VD=12V, IT=10mA
VD= VDRM(max), IT=10mA; Tj=125

0.8

200

uA

Latching Current

IL

VD=12V, IGT=0.5mA; RGK=1k

Holding Current

IH

VD=12V, IGT=0.5mA; RGK=1k

dVD/dt

VDM=67% VDRM(max); Tj=125

exponential waveform; RGK=1k

25

Gate Controlled turn-on time

tgt

ITM=2A; VD=VDRM(max),G=10mA;
dIG/dt=0.1A/us

Circuit Commutated turn-off time

tq

VD=67% VDRM(max); Tj=125,

TM=1.6A; VR=35V;
dITM/dt=30A/us,dVD/dt=2V/us; RGK=1k

Type

BT169-400

BT169-400A

BT169-400B

Range

0-200

10-30

30-60

Marking

BT/C39

BT/C35

BT/C36

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mA

0.2

VD=12V, IT=10mA

Classification of IGT (uA)

Unit
V

Off-state Leakage Current

Critical Rate of rise of off-state Voltage

Min

mA
V/us

us
100

Thyristor

SMD Type
SCR Thyristor
BT169 (KT169)
Typical Characterisitics
Tc(max) /
C

Ptot / W

0.8

conduction
angle
degrees
30
60
90
120
180

0.7
0.6
0.5
0.4

form
factor
a
4
2.8
2.2
1.9
1.57

a=1.57

77
83

1.9

95
101

107

0.2

113

0.1

119
0

0.1

0.2

0.3
0.4
IF(AV) / A

0.5

0.6

0.7

125

FIG.1 Maximum on-state dissipation, Ptot , versus average

on-state current, I T(AV) , where a=form factor=I T(RMS) / IT(AV)

1000

IT

ITSM / A

ITSM

89

2.2
2.8

0.3

ITSM / A

10

time
Tj initial=25 C max

6
4
2
0

10
100
1000
Number of half cycles at 50Hz
FIG.4 Maximnum permissible non-repetitive peak on-state current
ITSM , versus number of cycles, for sinusoidal currents, f = 50Hz.
2.0

IT(RMS) / A

1.5
100
IT
10

1.0

ITSM
T

0.5

time
Tj initial=25 C max
100s

10s

T/s

1ms

10ms

FIG.2 Maximum permissible non-repetitive peak on-state current

ITSM ,versus pulse width tp,for sinusoidal currents, t p <=10ms.
IT(RMS) / A
1.0
83C

0.8

0.1

1.0

10

surge duration / s
FIG.5 Maximum permissible repetitive rms on-state current I T(RMS) ,
versus surge duration, for sinusoidal currents, f= 50Hz; Tlead<=83
C
VGT(Tj)
1.6

VGT(25 C)

1.4
1.2

0.6

1.0

0.4

0.8

0.2
0
-50

0
0.01

0.6
0

50
100
150
Tlead / C
FIG.3 Maximum permissible rms current I T(RMS) , versus
lead temperature, Tlead

0.4
-50

50
100
150
Tj / C
FIG.6 Normalised gate trigger voltage V GT (Tj) /V GT( 25C),
versus junction temperature Tj

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Thyristor

SMD Type
SCR Thyristor
BT169 (KT169)
Typical Characterisitics
IGT(Tj)

3.0

VGT(25 C)

2.5

typ

max

1.0
0.5

1
0

50
Tj / C

100

150

FIG.7 Normalised gate trigger current IGT(Tj)/IGT(25 C),

versus junction temperature Tj

3.0

CC - - -

Vo=1.067V
Rs=0.187

1.5

-50

Tj=125
Tj= 25

2.0

IT / A

IL(Tj)
IL(25 C)

1.5

2.0

FIG.10 Typical and maximum on-state characteristic.

Zth j-lead (K/W)

100

2.5

1.0
VT / V

0.5

10

2.0
1

1.5
1.0
0.5
0

-50

50
Tj / C

100

150

FIG.8 Normalised latching current I L(Tj) /IL(25C),versus

junction temperature Tj, R GK= 1K

3.0

PD

0.1

IH(Tj)

IH(25 C)

0.01
10us 0.1ms 1ms

tp

10ms
tp / s

0.1s

1s

10s

FIG.11 Transient thermal impedance Zth j-lead, versus pulse width tp.

1000

dVD/dt(V/us)

2.5
2.0

100

RGK=1K

1.5
1.0

10

0.5
0

50
100
150
Tj / C
FIG.9 Normalised holding current I H (Tj)/IH(25 C),versus
junction temperature Tj, R GK=1K

-50

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Tj / C

50

150

FIG.12 Typical, critical rate of rise of off-state voltage,

dVD/dt versus junction temperature Tj.