2N5401

2N5401
Amplifier Transistor
Collector-Emitter Voltage: VCEO= 150V
Collector Dissipation: PC (max)=625mW
Suffix -C means Conter Collector (1. Emitter 2. Collector 3. Base)

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol
VCBO

Collector-Base Voltage

Parameter

Value
-160

Units
V

VCEO

Collector-Emitter Voltage

-150

VEBO

Emitter-Base Voltage

IC

-5

Collector Current

-600

mA

PC

Collector Dissipation

625

mW

TJ

Junction Temperature

150

TSTG

Storage Temperature

-55 ~ 150

Electrical Characteristics Ta=25C unless otherwise noted

Symbol
BVCBO

Parameter
Collector-Base Breakdown Voltage

Test Condition
IC= -100A, IE=0

Min.
-160

Typ.

Max.

Units
V

BVCEO

* Collector-Emitter Breakdown Voltage

IC= -1mA, IB=0

-150

BVEBO

Emitter-Base Breakdown Voltage

IE= -10A, IC=0

-5

ICBO

Collector Cut-off Current

VCB= -120V, IE=0

-50

nA

IEBO

Emitter Cut-off Current

VEB= -3V, IC=0

-50

nA

hFE

* DC Current Gain

IC= -1mA, VCE= -5V

IC= -10mA, VCE= -5V
IC= -50mA, VCE= -5V

30
60
50

240

VCE (sat)

* Collector-Emitter Saturation Voltage

IC= -10mA, IB= -1mA

IC= -50mA, IB= -5mA

-0.2
-0.5

V
V

VBE (sat)

* Base-Emitter Saturation Voltage

IC= -10mA, IB= -1mA

IC= -50mA, IB= -5mA

-1
-1

V
V

fT

Current Gain Bandwidth Product

IC= -10mA, VCE= -10V,

f=100MHz

400

MHz

Cob

Output Capacitance

VCB= -10V, IE=0, f=1MHz

pF

NF

Noise Figure

IC= -250A, VCE= -5V

RS=1K
f=10Hz to 15.7KHz

dB

100

* Pulse Test: Pulse Width300s, Duty Cycle2%

2004 Fairchild Semiconductor Corporation

Rev. B, May 2004

2N5401

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

Typical Characteristics

1000

hFE, DC CURRENT GAIN

VCE = -5V

100

10
-1

-10

-100

-1000

-10

IC = 10 IB

VBE(sat)
-1

VCE(sat)
-0.1

-0.01
-1

-10

-100

IC[mA], COLLECTOR CURRENT

IC [mA], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

100

-1000

IE = 0
f = 1MHz

Cob [pF], CAPACITANCE

IC [mA], COLLECTOR CURRENT

VCE = -5V

-100

-10

-1
-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

VBE[V], BASE-EMITTER VOLTAGE

10

0.1
-1

-10

-100

VCB [V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter On Voltage

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

-1000

Figure 4. Output Capacitance

1000

VCE = -10V

100

10

1
-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 5. Current Gain Bandwidth Product

2004 Fairchild Semiconductor Corporation

Rev. B, May 2004

2N5401

Package Dimensions

TO-92
+0.25

4.58 0.20

4.58 0.15

0.10

14.47 0.40

0.46

1.27TYP
[1.27 0.20]

1.27TYP
[1.27 0.20]
0.20

(0.25)

+0.10

0.38 0.05

1.02 0.10

3.86MAX

3.60

+0.10

0.38 0.05

(R2.29)

Dimensions in Millimeters
2004 Fairchild Semiconductor Corporation

Rev. B, May 2004

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
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The datasheet is printed for reference information only.

2004 Fairchild Semiconductor Corporation

Rev. I11