2016 25th Wireless and Optical Communication Conference (WOCC)

III-V Photonic Integrated Circuits for Beyond-Telecom Applications

Yuqing Jiao1*, Longfei Shen1, Zizheng Cao1, Sylwester Latkowski1, Erwin Bente1, Jos van der Tol1,
Huub Ambrosius2, Meint Smit1 and Kevin Williams1
1

COBRA Research Institute, Eindhoven University of Technology, Eindhoven, the Netherlands

2
Nanolab@TU/e, Eindhoven University of Technology, Eindhoven, the Netherlands
*
y.jiao@tue.nl

ABSTRACT
In this paper we introduce the III-V photonic integration
platforms
for
emerging
applications
beyond
telecommunications. Recent achievements in the InP
generic and InP membrane platforms for wireless and
sensing applications are reviewed. The realized chips
show the great potential of the InP-based photonic
integration due to its full functionality, high flexibility and
high performance.
Keywords: Photonic integrated circuits (PIC); indium
phosphide (InP); generic integration; InP membrane on
Si (IMOS); wireless communication; optical sensing

1. INTRODUCTION
Photonic integrated circuits (PICs) based on the indium
phosphide (InP) material system [1-3] have been playing
a crucial role in the telecommunication industry. The
flexible bandgap engineering and high light emission
efficiency in this III-V material system have enabled
high-speed transceivers, coarse and dense wavelength
division multiplexing (WDM) and advanced coherent
communication technologies for the 1550 nm
wavelength band.
The concept of a generic photonic integration foundry,
with its rapid development in recent years [1], further
opens up the accessibility of InP PICs to a large number
of small and medium-sized enterprises (SMEs) and
universities worldwide. One of the most successful
examples is the Joint European Platform for InP-based
Photonic Integrated Components and Circuits (JePPIX)
[4], within which generic InP-based integration
platforms are developed by Europes key players. The
central idea in JePPIX is the multi-project wafer (MPW)
run which allows the participants to benefit from the
reduced cost and throughput time [1]. Within the
foundry MPW run, the users can choose among
standardized building blocks (BBs) to assemble complex
circuits and functionalities. With the performance
guaranteed for each BB, a high reliability of the entire
chip is obtained.

978-1-4673-9958-6/16/$31.00 2016 IEEE

The growing demand for higher integration density,

faster operation speed and lower cost has pushed the InP
PIC developments into the field of nano-photonics. The
InP membrane on silicon (IMOS) concept [5] was
proposed as a promising candidate for the
next-generation nano-photonic InP PIC platform. This
concept aims to shrink all active and passive
functionalities into a very thin (< 1m) photonic
membrane layer, to achieve high optical confinement
and low parasitics. By using advanced processing
technologies [6-8], the optical loss in such highly
confined membrane is significantly reduced. Novel and
high performance membrane devices have been realized
[9-13] based on these technologies.
Besides the telecom application, the InP PICs are also
very suitable for building new devices and circuits for
other emerging applications. Both generic and
membrane platforms enable great freedoms in material,
technology and design, which are able to fulfil the
challenging requirements in new applications. In this
paper we review the recent advances in our InP photonic
integration platforms (both generic and membrane) for
emerging applications, with a focus on the wireless and
sensing applications
2. INP GENERIC PLATFORM
The schematic diagram of the InP generic platform
developed at Eindhoven University of Technology is
shown in Fig. 1. It is clear that this platform can
integrate a complete set of photonic functionalities on a
single chip, and customers can build various application
specific photonic integrated circuits.

Fig. 1. Schematic diagram of the InP generic platform at TU

Eindhoven [1].

2016 25th Wireless and Optical Communication Conference (WOCC)

Ch.3

133 GHz

(a) (b)
(c) (d)
200 GHz
Ch.1

Ch.2

Ch.4

Ch.4

Ch.4

Fig. 2. (a) The fabricated dual-wavelength laser chip for millimeter

wave generation. (b)(c)(d) The laser output spectra with balanced
lasing power and adjustable beating frequency [14].
Out-0

True Time Delay (ps)

Path-4

Path-1

Path-0

In-0

500m

80
Path-4

60
40
20
0

Path-0

1540 1544 1548 1552 1556 1560

Wavelength (nm)

Fig. 3. The fabricated cyclic AWG loop device for microwave

beam-steering, and the measured true time delay as a function of the
wavelength [15].

One of our recent achievements is a monolithic

dual-wavelength laser system for millimeter wave
generation [14], realized using the generic InP platform.
The chip contains a common semiconductor optical
amplifier (SOA) for optical gain, an arrayed waveguide
grating (AWG) for wavelength selection and four
Mach-Zehnder interferometers (MZIs) to control the
on-off states in the four laser channels, as well as the
power balance between the two on-state channels (Fig.
2(a)). The fundamental channel spacing is designed to be
67 GHz, predetermined by the channel spacing of the
AWG filter (Fig. 2(b)). By controlling the MZIs,
doubled and tripled beating frequencies can be achieved,
as is clearly shown in Fig. 2(c) and (d). This flexible
frequency configuration represents a valuable
opportunity for a new type of integrated millimeter wave
source.
Besides circuit-level innovations, the InP generic
platform also enables innovations at the device level. A
novel loop-back AWG device was developed for the
optical true time delay purpose [15], which is an
essential element for the microwave beam-steering. The
AWG loop device was specially designed to be
spectrally cyclic in order to match the system
requirement for 2D beam-steering [16]. The optical time
delay can be step-wise tuned by only one parameter: the
wavelength. Moreover, the device was designed to be
symmetric for input/output. Therefore it can be reused

978-1-4673-9958-6/16/$31.00 2016 IEEE

for both multiplexing and de-multiplexing. This not only

halves the device footprint, but also ensures maximum
fabrication tolerance. The picture of the device and the
measured true time delay are depicted in Fig. 3.
Another key message from Fig. 1 is that, by using
advanced butt-joint regrowth technology, the choice of
active material in the amplifier/detector section will not
influence or degrade other components such as
waveguides or phase modulators. Such high flexibility
allows for novel and compatible active materials to
extend the reach of InP PICs in terms of accessible
wavelength bands. For instance the standard InGaAs
multiple quantum well (MQW) in the active region can
be engineered in terms of growth conditions, or replaced
by Sb-containing MQWs or even novel quantum dots
(QDs) for extended emission wavelength.
Multi-layer QDs [17] and QDs-in-QW [18], fabricated
with advanced self-assembly techniques, are fully
compatible with the InP generic platform. They provide
unique opportunities to extend emission wavelength
beyond 1550 nm, by tuning the average size of the QDs.
This is especially valuable for the increasing demands of
medical imaging and sensing at the 1700 nm wavelength
band, which gives reduced light scattering and enhanced
imaging depth. We have developed a worlds first
integrated QD tunable laser system for 1700 nm
swept-source optical coherence tomography (OCT) [19],
purely based on the generic layerstack (only the active
material is changed) and processing technology. The
laser chip consists of more than 300 monolithically
integrated optical components, including QD-SOA,
phase modulator array, electrical connections, AWGs
and optical couplers (Fig. 4(a)). The laser wavelength
can be tuned over 60 nm range around 1700 nm (see Fig.
4(b)), using phase-tuned intra-cavity AWG filters. The
phase control is achieved with automated control
electronics. The resulting laser can sweep its lasing
wavelength across the 60 nm bandwidth with 4000
wavelength samples in only 2 milliseconds. It is
successfully demonstrated in a free-space OCT setup
with test imaging experiments.

(a)
(b)

0.8

Responsivity (A/ W)

66 GHz

0.7
0.6

0V
1V
2V
3V
Black: TE
Red: TM

0.5
0.4
0.3
0.2
0.1
0.0
1.45

1.50

1.55

1.60

(m)

1.65

1.70

1.75

(c)

Fig. 4. (a) The QD tunabe laser [19] and (b) Coarse tuning of the QD
tunable laser over 60 nm band. (c) The ultra-wide spectral response of
the QD photodetector [20].

Such novel QD-SOAs can also be converted to

high-performance photodetectors for long wavelength
imaging, sensing and interconnect applications [20]. The

2016 25th Wireless and Optical Communication Conference (WOCC)

QD photodetectors are fully compatible with the QD

laser, since they are basically reverse-biased QD-SOAs.
The spectral efficiency of such QD photodetectors can
be very flat over a record-wide wavelength band of more
than 300 nm (see Fig. 4(c)), which is attributed to the
unique properties of the QDs.
The highly strained InGaAs MQW system is an
alternative choice to achieve longer wavelengths. The
bandgap of the MQWs can be tuned to have emission
wavelengths around 2000 nm, which is of great interest
in gas sensing and optical interconnects. Widely tunable
2 m lasers based on this gain medium, with nested
asymmetric Mach-Zehnder intra-cavity filters for
continuous wavelength tuning, was reported recently
[21, 22]. The schematic layout and measured laser
outputs are shown in Fig. 5. The preliminary results of
this laser chip showed about 31 nm tuning range around
the 2027 nm central wavelength, as well as the capability
of single longitudinal mode lasing over the whole tuning
range.
(a) (b)

electron-hole pairs can be collected immediately. The

electrons will travel through the intrinsic waveguiding
layer into the n-region. Thanks to the high flexibility in
layerstack design in the InP membrane, the InGaAs
active medium is only 150 nm thick, and its growth is
precisely engineered to form a gradient doping. This
ensures the electrons to be accelerated and to drift to the
n-contact in the shortest time scale.
On the other hand, the active medium is located as close
as possible to the passive waveguide. This ensures an
optimized mode overlap with the active medium,
therefore a very short device length. Overall the device
has a footprint of only 3 10 m2. Both the
uni-travelling carrier configuration and the optimized
device footprint result in an estimated electrical
bandwidth beyond 100 GHz. The device was fabricated
with a novel double-sided fabrication approach [24]. The
picture of the final device is shown in Fig. 7(a). The
UTC detector has a high responsivity of 0.7 A/W at 1550
nm wavelength and -4 V bias, while its dark current is as
low as 150 nA. The measured 3dB bandwidth is beyond
67 GHz (limited by the network analyzer) at -4 V, as can
be seen from Fig. 7(b). This high efficiency and high
frequency behavior make this device a promising
candidate for microwave to terahertz wave generation
[25].
0

S21 Response (dB)

-1

Fig. 5. (a) The fabricated 2 m tuneble laser chip [22]. The chip is
wire-bonded to PCB for automated control. (b) The coarse tuning of the
laser across 31 nm range.

-2
-3
-4
-2 V
-3 V
-4 V

-5

3. INP MEMBRANE PLATFORM

The basic idea of the InP membrane platform is to
optically isolate InP photonic circuitry from the
substrate, while keeping all the active and passive
functionalities (Fig. 6 [23]). This results in a much
enhanced optical confinement in the waveguides and
devices. Therefore the footprint of the InP membrane
devices are expected to be an-order-of-magnitude
smaller than their traditional counterparts [23]. This is
very important for achieving ultra-low parasitics and
high operation frequency.
Detector
Laser

Photonics
CMOS

Electronics

Fig. 6. Artists impression of the InP membrane platform, with

high-confinement photonic components in the InP membrane cirucit,
and in close connection with CMOS electronics [23].

A uni-travelling carrier (UTC) photodetector has been

designed and fabricated on the InP membrane platform
[13]. The active material for light absorption is InGaAs.
It is p-doped such that the holes from the light-generated

978-1-4673-9958-6/16/$31.00 2016 IEEE

5 m

-6

(a)

(b)

10

20

30

40

50

60

70

Frequency (GHz)

Fig. 7. (a) The UTC photodetector on the InP membrane. (b) The
frequency response of the UTC photodetector at three different reverse
bias conditions.

The high optical confinement in the InP membrane also

leads to very strong light-matter interactions, which is
ideal for manipulation and coupling of light waves
between free space and guided structures. This is very
valuable
for
next-generation
optical
wireless
communications [26]. The key element is a surface
grating, which efficiently couples light between
membrane PICs and free space, with small footprint and
high scalability into large arrays.
Traditional optical wireless receivers based on
top-illuminated photodetector arrays [27, 28] have
suffered from limited data rates. This is because
top-illuminated detectors cannot break the barrier where
the device footprint determines both light-collection
efficiency and electrical bandwidth, but in opposite
ways. Therefore we have proposed a novel cascaded
acceptance optical receiver which can satisfy high
efficiency and high speed at the same time [29]. The
device consists of a membrane-based surface grating and
a p-i-n type photodetector, connected with a single-mode
waveguide, as shown in Fig. 8(a). The light collection is
accomplished by the surface grating, where the
efficiency is independent of the footprint of the

2016 25th Wireless and Optical Communication Conference (WOCC)

photodetector. Therefore the grating and the detector can

be optimized separately for maximized efficiency and
bandwidth. The receiver grating can also form an array
to obtain optimized light collection of large optical
beams [29]. In this proof-of-concept chip (Fig. 8(a)), the
photodetector is a short section of reverse-biased
amplifier, which is the same as the amplifiers used in the
membrane lasers [12]. The grating is a standard surface
grating used for fiber coupling. A demonstration was
carried out by injecting a fiber-launched free-space
optical signal into the grating. 17.4 Gbps OFDM signal
is used at the input. The corresponding photocurrent was
amplified and analyzed (Fig. 8(b)). Bit error rates of less
than 3.8 10-3 (below the common forward error
correction limit) was achieved for 1560 nm wavelength
and optical powers higher than -3.5 dBm. Further
improvements on the grating efficiency and detector
bandwidth would significantly improve the performance
of this receiver. For instance, the integration of metallic
gratings could enhance the grating efficiency up to 80 %
[11], and the optimization of the p-i-n diode could result
in a bandwidth of 40 GHz.
(a)
n-contact
detector

p-contact

100 m

Bit Error Rate

0.012

1540nm
1550nm
1560nm

0.009

0.006

0.003
-4.5

-4.0

-3.5

-3.0

-2.5

-2.0

-1.5

Received Optical Power (dBm)

(b)

Fig. 8. (a) The cascaded acceptance optical wireless receiver made on

the InP membrane. (b) The bit error rate curves at three different
wavelengths, and the OFDM signal constellation for 1560 nm
wavelength and optical power of -1.5 dBm [28].

4. CONCLUSION
In conclusion, we have presented our recent
advancements in InP photonic integration platforms, for
beyond-telecom applications. The mature technology,
standardized building blocks, complete photonic
functionalities in the InP generic platform have enabled
great opportunities for microwave photonics. The
flexibility of material-level and device-level innovations
further opens up new functionalities in microwave and
sensing applications. Furthermore, the development of
an InP membrane platform reveals its unique advantage
in terahertz wave generation and optical wireless
communications.
5. ACKNOWLEDGMENTS

978-1-4673-9958-6/16/$31.00 2016 IEEE

The authors thank the support by the ERC Advanced

Grant NOLIMITS, and the cleanroom facility at the
Nanolab@TU/e.
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