MITSUBISHI

MITSUBISHI
SEMICONDUCTOR
SEMICONDUCTOR
<Intelligent
<Intelligent
Power
Power
Module>
Module>

PS21246-E
PS21246-E
TRANSFER-MOLD
TRANSFER-MOLD
TYPE
TYPE
INSULATED
INSULATED
TYPE
TYPE

PS21246-E

INTEGRATED POWER FUNCTIONS

4th generation (planar) IGBT inverter bridge for 3 phase
DC-to-AC power conversion.

INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS

For upper-leg IGBTS : Drive circuit, High voltage isolated high-speed level shifting, Control circuit under-voltage (UV) protection.
Note : Bootstrap supply scheme can be applied.
For lower-leg IGBTS : Drive circuit, Control circuit under-voltage protection (UV), Short circuit protection (SC).
Fault signaling : Corresponding to a SC fault (Low-side IGBT) or a UV fault (Low-side supply).
Input interface : 5V line CMOS/TTL compatible, Schmitt Trigger receiver circuit.

APPLICATION
AC100V~200V three-phase inverter drive for small power motor control.

Fig. 1 PACKAGE OUTLINES

Dimensions in mm

272.8(=75.6)
TERMINAL CODE

12 13

14 15 16 17 18 19 20 21

.2

24

25

26

A
100.3 100.3 100.3

200.3

3.80.2

14
15
16
17
18
19
20
21
22
23
24
25
26

VN1
VNC
CIN
CFO
FO
UN
VN
WN
P
U
V
W
N

0.50.2

(71)
HEAT SINK SIDE

Detail A

1.90.05
10.2

3.25MAX
Detail B
(t=0.7)

1.75MAX
0.80.2
0.60.5

80.5

Irrgulor solder remains

0.5MAX

790.5

Irrgulor solder remains

0.5MAX

670.3

0.60.5

23

UP
VP1
VUFB
VUFS
VP
VP1
VVFB
VVFS
WP
VP1
VPC
VWFB
VWFS

45

22

11.50.5

Type name , Lot No.

0
4.5
2-

280.5

9 10 11

21.40.5

7 8

310.5

5 6

1
2
3
4
5
6
7
8
9
10
11
12
13

13.40.5

3 4

161 or
12.81

1 2

3~5

2.80.3

Detail C
(t=0.7)

Sep. 2001

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>

PS21246-E
TRANSFER-MOLD TYPE
INSULATED TYPE

Fig. 2 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE)

CBW

CBW+

CBU+

CBV+
CBV

CBU

High-side input (PWM)

(5V line) (Note 1,2)

C3 : Tight tolerance, temp-compensated electrolytic type

(Note : The capacitance value depends on the PWM control
scheme used in the applied system).
C4 : 0.22~2F R-category ceramic capacitor for noise filtering.

Bootstrap circuit

C4
C3

Input signal Input signal Input signal

coditioning coditioning coditioning

For detailed description

of the boot-strap circuit
construction, please
contact Mitsubishi
Electric

Level shifter Level shifter Level shifter

Protection
circuit (UV)

Protection
circuit (UV)

(Note 6)

Protection
circuit (UV)

DIP-IPM
Drive circuit Drive circuit Drive circuit

Inrush current
limiter circuit

AC line input

H-side IGBTS
(Note 4)

Fig. 3

U
V
W

M
AC line output

N1
VNC

Z : ZNR (Surge absorber)

C : AC filter (Ceramic capacitor 2.2~6.5nF)
(Note : Additionally, an appropriate line-to line
surge absorber circuit may become necessary
depending on the application environment).

N
L-side IGBTS

CIN
Drive circuit
Protection
circuit

Fo logic

Input signal conditioning

Control supply
Under-Voltage
protection

FO CFO
Low-side input (PWM)
(5V line)
(Note 1, 2) Fault output (5V line)
(Note 3, 5)

Note1:
2:
3:
4:

5:
6:

VNC
VD
(15V line)

To prevent the input signals oscillation, an RC coupling at each input is recommended. (see also Fig. 6)
By virtue of integrating an application specific type HVIC inside the module, direct coupling to CPU terminals without any opto-coupler or transformer
isolation is possible. (see also Fig. 6)
This output is open collector type. The signal line should be pulled up to the positive side of the 5V power supply with approximately 5.1k resistance.
(see also Fig. 6)
The wiring between the power DC link capacitor and the P/N1 terminals should be as short as possible to protect the DIP-IPM against catastrophic high
surge voltages. For extra precaution, a small film type snubber capacitor (0.1~0.22F, high voltage type) is recommended to be mounted close to
these P and N1 DC power input pins.
Fo output pulse width should be decided by putting external capacitor between CFO and VNC terminals. (Example : CFO=22nF tFO=1.8ms (Typ.))
High voltage (600V or more) and fast recovery type (less than 100ns) diodes should be used in the bootstrap circuit.

Fig. 3 EXTERNAL PART OF THE DIP-IPM PROTECTION CIRCUIT

DIP-IPM

Short Circuit Protective Function (SC) :

SC protection is achieved by sensing the L-side DC-Bus current (through the external
shunt resistor) after allowing a suitable filtering time (defined by the RC circuit).
When the sensed shunt voltage exceeds the SC trip-level, all the L-side IGBTs are turned
OFF and a fault signal (Fo) is output. Since the SC fault may be repetitive, it is
recommended to stop the system when the Fo signal is received and check the fault.

Drive circuit

IC (A)
H-side IGBTS

SC Protection
Trip Level

U
V
W

L-side IGBTS

External protection circuit

N1

Shunt Resistor

(Note 1)

VNC

C R

Drive circuit

CIN
B
C

Collector current
waveform

Protection circuit
(Note 2)

Note1: In the recommended external protection circuit, please select the RC time constant in the range 1.5~2.0s.
2: To prevent erroneous protection operation, the wiring of A, B, C should be as short as possible.

0
2

tw (s)

Sep. 2001

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>

PS21246-E
TRANSFER-MOLD TYPE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25C, unless otherwise noted)
INVERTER PART
Symbol
VCC
VCC(surge)
VCES
IC
ICP
PC
Tj

Parameter

Condition
Applied between P-N

Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature

Ratings

Applied between P-N

TC = 25C
TC = 25C, instantaneous value (pulse)
TC = 25C, per 1 chip
(Note 1)

450
500
600
25
50
59.5
20~+150

Unit
V
V
V
A
A
W
C

Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150C (@ TC 100C) however, to ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) 125C (@ TC 100C).

CONTROL (PROTECTION) PART

Symbol
VD

Parameter
Control supply voltage

Condition
Applied between VP1-VPC, VN1-VNC

VDB

Control supply voltage

VCIN

Input voltage

VFO

Fault output supply voltage

Fault output current
Current sensing input voltage

Applied between VUFB-VUFS, VVFB-VVFS ,

VWFB-VWFS
Applied between UP, VP, WP-VPC, UN, VN,
W N-VNC
Applied between F O-VNC
Sink current at F O terminal
Applied between CIN-V NC

IFO
VSC

Ratings
20

Unit
V

20

0.5~+5.5

0.5~VD+0.5
15
0.5~VD+0.5

V
mA
V

Ratings

Unit

400

20~+100
40~+125

C
C

1500

Vrms

TOTAL SYSTEM
Symbol
Parameter
VCC(PROT) Self protection supply voltage limit
(short circuit protection capability)
Module case operation temperature
TC
Tstg

Storage temperature

Viso

Isolation voltage

Condition
VD = 13.5~16.5V, Inverter part
Tj = 125C, non-repetitive, less than 2 s
(Note 2)
60Hz, Sinusoidal, AC 1 minute, connection
pins to heat-sink plate

Note 2 : T C MEASUREMENT POINT

Control Terminals

DIP-IPM

Heat sink boundary

Heat sink

Tc

Tc
Power Terminals

Sep. 2001

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>

PS21246-E
TRANSFER-MOLD TYPE
INSULATED TYPE

THERMAL RESISTANCE
Symbol

Parameter

Rth(j-c)Q
Rth(j-c)F

Junction to case thermal

resistance

Rth(c-f)

Contact thermal resistance

Limits

Condition
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
Case to fin, (per 1 module)
thermal grease applied

Unit

Min.

Typ.

Max.

2.1
3.0

C/W
C/W

0.067

C/W

Limits
Typ.

Max.

1.55
1.65
2.50
0.80
0.10
0.30
1.50
0.80

2.15
2.25
3.40
1.30

0.70
2.60
1.70
1
10

ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted)

INVERTER PART
Symbol

Condition

Parameter

IC = 25A, Tj = 25C
VD = VDB = 15V
VCIN = 0V
IC = 25A, Tj = 125C
Tj = 25C, IC = 25A, VCIN = 5V

VCE(sat)

Collector-emitter saturation
voltage

VEC
ton
trr
tc(on)
toff
tc(off)

FWD forward voltage

Switching times

IC = 25A, Tj = 125C, V CIN = 5V 0V

Inductive load (upper-lower arm)

ICES

Collector-emitter cut-off
current

VCE = VCES

Min.

0.10

VCC = 300V, VD = VDB = 15V

Tj = 25C
Tj = 125C

Unit
V
V
s
s
s
s
s
mA

CONTROL (PROTECTION) PART

Symbol

Parameter

VD
VDB

Control supply voltage

Control supply voltage

ID

Circuit current

VFOH
VFOL
VFOsat

Fault output voltage

tdead

Arm shoot-through blocking time

VSC(ref)
UVDBt
UVDBr
UVDt
UVDr
tFO
Vth(on)
Vth(off)

Short circuit trip level

Supply circuit under-voltage
protection
Fault output pulse width
ON threshold voltage
OFF threshold voltage

Limits

Condition
Applied between VP1-VPC, VN1 -VNC
Applied between VUFB-VUFS, VVFB-VVFS , VWFB-VWFS
VD = VDB = 15V Total of VP1-VPC, VN1 -VNC
VUFB-VUFS, VVFB-V VFS, VWFB-VWFS
VCIN= 5V
VSC = 0V, FO = 10k 5V pull-up
VSC = 1V, FO = 10k 5V pull-up
VSC = 1V, IFO = 15mA
Relates to corresponding input signal for blocking arm
shoot-through.
20C TC 100C
Tj = 25C, VD = 15V
Trip level
Reset level
T j 125C
Trip level
Reset level
CFO = 22nF

(Note 3)

(Note 4)

Applied between : UP, VP, WP-VPC, UN, VN, WN-VNC

Min.
13.5
13.5

Unit

4.9

Typ.
15.0
15.0

Max.
16.5
16.5
8.50
1.00

0.8

0.8
1.2

1.2
1.8

V
V
V

2.5

0.45
10.0
10.5
10.3

0.5

10.8
1.0
0.8
2.5

1.8
1.4
3.0

0.55
12.0
12.5
12.5
13.0

2.0
4.0

V
V
V
V
V
ms

V
V
mA

V
V

Note 3 : Short circuit protection is functioning only at the low-arms. Please select the value of the external shunt resistor such that the SC triplevel is less than 42.5 A.
4 : Fault signal is output when the low-arms short circuit or control supply under-voltage protective functions operate. The fault output pulsewidth tFO depends on the capacitance value of CFO according to the following approximate equation : CFO = 12.2 10-6 tFO [F].

Sep. 2001

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>

PS21246-E
TRANSFER-MOLD TYPE
INSULATED TYPE
MECHANICAL CHARACTERISTICS AND RATINGS
Condition

Parameter
Mounting torque
Terminal pulling strength
Bending strength
Weight
Heat-sink flatness

Mounting screw : M4
Weight 19.6N
Weight 9.8N. 90deg bend

EIAJ-ED-4701
EIAJ-ED-4701

(Note 5)

Min.
0.98
10
2

50

Limits
Typ.
1.18

54

Max.
1.47

100

Min.

Limits
Typ.

Max.

Unit
Nm
s
times
g
m

Note 5: Measurement point of heat-sink flatness

(Note 5)
DIP-IPM
Measurement point
3mm

Place to contact
a heat sink

Heat sink

Heat sink

RECOMMENDED OPERATION CONDITIONS

Symbol

Parameter

VCC
VD
VDB
VD, VDB
tdead
fPWM
VCIN(ON)
VCIN(OFF)

Supply voltage
Control supply voltage
Control supply voltage
Control supply variation
Arm shoot-through blocking time
PWM input frequency
Input ON threshold voltage
Input OFF threshold voltage

Condition
Applied between P-N
Applied between VP1-VPC, VN1 -VNC
Applied between VUFB-VUFS, V VFB-VVFS , VWFB-VWFS
Relates to corresponding input signal for blocking arm shoot-through
TC 100C, Tj 125C
Applied between UP, VP, WP-VPC
Applied between UN, VN, WN-VNC

0
13.5
13.5
1
2.5

300
15.0
15.0

5
0~0.65
4.0~5.5

400
16.5
16.5
1

Unit
V
V
V
V/s
s
kHz
V
V

Sep. 2001

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>

PS21246-E
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 4 THE DIP-IPM INTERNAL CIRCUIT

DIP-IPM

VUFB
VUFS
VP1
UP

HVIC 1
VB

VCC

IGBT1

Di1

HO

IN

VS

COM

VVFB
VVFS
VP1
VP

HVIC 2
VB

VCC

IGBT2

Di2

HO

IN

VS

COM

VWFB
VWFS

HVIC 3

VP1

VCC

WP

IN

VPC

COM

VB

IGBT3

Di3

HO
VS

W
IGBT4

LVIC

Di4

UOUT

VN1

VCC

IGBT5

Di5

VOUT

UN

UN

VN

VN

WN

WN

Fo

Fo

IGBT6

Di6

WOUT
VNO
CIN

VNC

GND

CFO

CFO

CIN

Sep. 2001

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>

PS21246-E
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 5 TIMING CHARTS OF THE DIP-IPM PROTECTIVE FUNCTIONS
[A] Short-Circuit Protection (N-side only)
(For the external shunt resistor and CR connection.)
a1. Normal operation : IGBT ON and carrying current.
a2. Short circuit current detection (SC trigger).
a3. Hard IGBT gate interrupt.
a4. IGBT turns OFF.
a5. FO timer operation starts : The pulse width of the F O signal is set by the external capacitor CFO.
a6. Input H : IGBT OFF state.
a7. Input L : IGBT ON state.
a8. IGBT OFF state.

N-side control input

a6

Protection circuit state

a7

SET

Internal IGBT gate

RESET

a3
a2
SC

a4

a1

Output current Ic(A)

a8
SC reference voltage

Sense voltage of the

shunt resistor

CR circuit time constant DELAY

Error output Fo

a5

[B] Under-Voltage Protection (N-side, UVD)

a1. Normal operation : IGBT ON and carrying current.
a2. Under voltage trip (UVDt).
a3. IGBT OFF in spite of control input condition.
a4. FO timer operation starts.
a5. Under voltage reset (UVDr).
a6. Normal operation : IGBT ON and carrying current.

Control input

Protection circuit state

Control supply voltage VD

RESET

SET
UVDr
UVDt

a5
a2

a1

a3

a6

Output current Ic(A)

Error output Fo

a4

Sep. 2001

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>

PS21246-E
TRANSFER-MOLD TYPE
INSULATED TYPE
[C] Under-Voltage Protection (P-side, UVDB)
a1. Control supply voltage rises : After the voltage level reachs UVDBr, the circuits start to operate when the next input is applied.
a2. Normal operation : IGBT ON and carrying current.
a3. Under voltage trip (UVDBt).
a4. IGBT OFF in spite of control input condition, but there is no FO signal output.
a5. Under-voltage reset (UVDBr).
a6. Normal operation : IGBT ON and carrying current.

Control input

Protection circuit state

RESET

SET

RESET

UVDBr
Control supply voltage VDB

a1

UVDBt
a2

a5
a3
a4

a6

Output current Ic(A)

High-level (no fault output)
Error output Fo

Fig. 6 RECOMMENDED CPU I/O INTERFACE CIRCUIT

5V line

DIP-IPM
5.1k

4.7k
UP,VP,WP,UN,VN,WN

CPU
Fo
1nF

1nF
VPC, VNC(Logic)

Note : RC coupling at each input (parts shown dotted) may change depending on the
PWM control scheme used in the application and on the wiring impedances of
the applications printed circuit board.

Sep. 2001

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>

PS21246-E
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 7 TYPICAL DIP-IPM APPLICATION CIRCUIT EXAMPLE

C1: Tight tolerance temp - compensated electrolytic type; C2,C3: 0.22~2 F R-category ceramic capacitor for noise filtering

5V line

C2

VUFB

C1

VUFS

DIP-IPM
P

VP1
C3

UP

VCC

VB

IN

HO

COM

VS

VCC

VB

IN

HO

COM

VS

VCC

VB

IN

HO

C2

VVFB
C1

VVFS
VP1

C3

VP
C2

VWFB
C1

C
P
U

VWFS
VP1

C3

WP
VPC

U
N
I
T

COM

VS

UOUT
C3

VN1
VCC

5V line
VOUT

UN
VN
WN
Fo

UN
VN

WOUT

If this wiring is too long, short

circuit might be caused.

WN
Fo

VNO
CIN

VNC

GND

CFO

C
CFO

CIN

C4(CFO )

15V line

A
The long wiring of GND might generate
noise on input signals and cause IGBT to
be malfunctioned.

R1

C5

If this wiring is too long, the SC level

fluctuation might be larger and cause SC
malfunction.

Shunt
resistor
N1

Note 1 : To prevent the input signals oscillation, an RC coupling at each input is recommended, and the wiring of each input should be as short
as possible. (Less than 2cm)
2 : By virtue of integrating an application specific type HVIC inside the module, direct coupling to CPU terminals without any opto-coupler
or transformer isolation is possible.
3 : FO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately
5.1k resistance.
4 : FO output pulse width should be decided by connecting an external capacitor between CFO and VNC terminals (C FO). (Example : CFO
= 22 nF tFO = 1.8 ms (typ.))
5 : Each input signal line should be pulled up to the 5V power supply with approximately 4.7k resistance (other RC coupling circuits at
each input may be needed depending on the PWM control scheme used and on the wiring impedances of the systems printed circuit
board). Approximately a 0.22~2F by-pass capacitor should be used across each power supply connection terminals.
6 : To prevent errors of the protection function, the wiring of A, B, C should be as short as possible.
7 : In the recommended protection circuit, please select the R1C5 time constant in the range 1.5~2s.
8 : Each capacitor should be put as nearby the pins of the DIP-IPM as possible.
9 : To prevent surge destruction, the wiring between the smoothing capacitor and the P&N1 pins should be as short as possible. Approximately a 0.1~0.22F snubber capacitor between the P&N1 pins is recommended.

Sep. 2001

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