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I. INTRODUCTION
Titanium dioxide (TiO2 ) has been widely investigated for
optical application because it is mechanically hard and
chemically resistant and has a high refractive index (n
2.5). 17 Also, it has been studied as a dielectric material
capacitor and gate material for integrated circuit application because of its high dielectric constant.815 Many techniques have been used to prepare titanium oxide thin films.
Examples are: reactive evaporation,1,24 reactive direct current
dc or radio-frequency rf sputtering,26,9,14,23 chemicalvapor deposition CVD,13 plasma-enhanced chemical-vapor
deposition PECVD,16 and the solgel process.17
Depending on the deposition techniques and deposition
conditions, the dielectric constant of the titanium oxide films
can vary from 10 to 150.8,9,1215,17 The variations in the dielectric constant of titanium oxide are related to the presence
of low-permittivity interfacial layers between titanium oxide
and the substrate and on the crystalline phase of the titanium
oxide films. For example, Rausch and Burte15 showed that
the dielectric constant of titanium oxide is 28 as deposited,
and increased up to 70 after the postannealing process due to
development of a new crystalline phase. From a technical
viewpoint, rutile is the most favorable crystalline phase because it has a high dielectric constant and refractive index.
However, in many applications, one cannot allow the hightemperature annealing that is required to obtain the rutile
phase. In such cases, one has to research a deposition technique that can provide high-quality amorphous films with a
reasonable dielectric constant.
In reactive sputtering, a metal target is used and a partial
pressure of reactive gas (O2 ) is added to the Ar sputtering
atmosphere to deposit an oxide film. One advantage of reactive sputtering is that the stoichiometry of the deposited film
can be controlled. Also, a higher deposition rate can be obtained when compared to the sputtering of an oxide coma
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TABLE I. Pulsing frequency and duty cycle used in the deposition of titanium oxide films for 3 kW sputtering power.
Pulsing frequency
kHz
Reverse time
ns
50
150
200
250
4016
1296
976
816
20.08
19.44
19.52
20.40
II. EXPERIMENT
A CVC model AST-601 sputter system, which had a three
20.3 cm circular target assembly installed in the bottom base
plate, was used to deposit the titanium oxide films. The target was a 20.3-cm-diam, 0.63-cm-thick Ti plate of 99.99%
purity. The target was located at the bottom of the chamber
in a sputter-up configuration. The circular rotary substrate
holder was 5 cm above the Ti target. Two types of substrates
were loaded into the chamber: 5 in. p-type silicon wafers
with or without Al metal. Bare silicon wafers were cleaned
by the standard RCA procedure just before being loaded into
the chamber and used as substrates to deposit titanium oxide
films for thickness and refractive index measurements. Films
deposited on the metallized silicon wafers were used for
electrical evaluation.
The system was evacuated by a compressed helium cryogenic high vacuum pump below 2107 Torr prior to deposition. Different gas inlets with mass flow controllers to the
deposition chamber were used to regulate the oxygen partial
pressure of the sputtering atmosphere, which was a mixture
of argon and oxygen gas. Before the deposition, the titanium
target was presputtered with 100% Ar gas for 5 min. The
total pressure was kept at 6 mTorr during the deposition. No
intentional substrate heating was used during the depositions.
A reactive plasma generator, ENI RPG-50, was used to
deposit the films. The pulsing frequency can be varied from
50 to 250 kHz with a 40% maximum reverse bias duty cycle.
The pulsing frequency and revere bias duty cycle used in this
experiment are shown in Table I. The reverse bias duty cycle
is defined as the reverse time divided by the total time, which
is the inverse of the pulsing frequency. The deposition power
and time were kept constant, 3 kW and 50 min., respectively.
The deposition rates of the titanium oxide films were 2023
/min.
Single-wavelength ellipsometry 633 nm, Rudolphs
AL-II at an incident angle of 70 from normal was used to
determine the film thickness, deposition rate, and refractive
index. Metalinsulatormetal MIM structures were fabricated to evaluate the electrical properties of the titanium oxide films. Al electrodes were deposited by an e-beam technique through a metal shadow mask on the top of the
titanium oxide film to make the MIM structure. Two
and 17.67
different-sized capacitors (4.32103
103 cm2 ) were used for electrical characterization. A
HP4192A rf impedance analyzer was used for the capacitance measurement with 1.1 V sweeping signal at a frequency of 10 kHz or 1 MHz and a HP4140B pA meter was
J. Vac. Sci. Technol. A, Vol. 19, No. 2, MarApr 2001
430
used for leakage current and breakdown voltage measurements. The breakdown voltage was defined as the current
compliance of the instrument, which was 1102 A.
The structural characterization of the deposited films on
the silicon wafer was analyzed using x-ray diffraction with
Cu K radiation 40 kV and 30 mA and a nickel filter. The
measured diffraction angle was from 20 to 70 grazing
with 0.03 increments. The stoichiometry of the titanium oxide films was analyzed by both Rutherford backscattering
spectroscopy RBS using a 2 MeV He beam and x-ray
photoelectron spectroscopy XPS.
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by x-ray diffraction because no additional heating was applied during sputtering. No diffraction peaks except that
from the Si substrate were found when the titanium oxide
films on the silicon wafer were scanned from 20 to 70 in
the x-ray diffraction. The stoichiometry of the titanium oxide
film was obtained using RBS and XPS. The results showed
that the O/Ti atomic ratio of the films ranged from 2.2 to 2.4
as a function of oxygen partial pressure and there was not
much difference for different pulsing conditions.
B. Electrical properties
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FIG. 4. Representative I V curves of the titanium oxide films as a function of oxygen partial pressure at a 50 kHz, b 150 kHz, c 200 kHz, and d 250
kHz pulsing conditions.
A figure of merit FM, which was defined as the product of the dielectric constant and breakdown field, can be
used to determine the quality of the dielectric films.20 The
FM value represents the maximum charge storage density of
the films. The FM of the titanium oxide films ranged from 19
( P40% and f 50 kHz) to 50 ( P40% and f
150 kHz). Although the FM showed a maximum value at
P40% and f 150 kHz, the leakage current density was
still high 7.8 mA/cm2. A minimum leakage current can be
obtained at P60% and f 200 kHz FM35.
IV. CONCLUSIONS
The pulsed reactive dc magnetron sputtering technique
was used to deposit titanium oxide films with different oxygen partial pressure P in the sputtering atmosphere and
pulsing frequency f. Two different sputtering modes metallic and reactive mode were identified as a function of
oxygen partial pressure and pulsing frequency from the
change of the cathode voltage, which is related to the oxide
coverage of the target. For titanium oxide thin films, the
oxidation state of the target mainly depends on the oxygen
JVST A - Vacuum, Surfaces, and Films
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