Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2

By D. A. Neamen Exercise Solutions

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Chapter 2
Exercise Solutions

1.054 10 n 34 2 2 2

Ex. 2.1 2 9.1110 12 10

31 10 2

(a) 4.179 10 20 n 2 J
E h
hc


6.625 10 3 10 34
10
4.179 10 20 n 2
or E n 0.261n 2 eV
100 10 8
1.6 10 19

1.9875 10 17 J Then
1.9875 10 17 E1 0.261 eV, E 2 1.045 eV,
or E 124 eV
1.6 10 19 E 3 2.351 eV

(b) E
hc


6.625 10 34 3 10 10 (b) E n
2 2 n 2
4500 10 8 2ma 2
4.417 10 19 J

1.054 10 n 34 2 2 2

4.417 10 19 21.67 10 12 10
27 10 2
or E 2.76 eV
1.6 10 19 2.28 10 23 n 2 J
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2.27967 10 23 n 2
or E n
Ex 2.2 1.6 10 19
(a) p 2mE
1.425 10 4 n 2 eV
Then E1 1.425 10 4 eV

2 9.11 10 31 12 10 3 1.6 10 19 1/ 2

E 2 5.70 10 4 eV
26
5.915 10 kg-m/s
E 3 1.28 10 3 eV
h 6.625 10 34
1.12 10 8 _______________________________________
p 5.915 10 26
m Ex 2.4

o 1 1 2
or 112 A E m 2 9.11 10 31 10 5
2 2
h 6.625 10 34
(c) p 4.555 10 21 J
112 10 10 Now
5.915 10 26 kg- 2m
m/s k2 V o E Set V o 3E
2
E

1 p 2 1 5.915 10 26

2
Then
2 m 2 2.2 10 31 1
k2 2m 2 E
= 7.952 10 21 J
7.952 10 21
or E
1.6 10 19
4.97 10 2

29.1110 2 4.555 10
31 21 1/ 2

eV 1.054 10 34
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or
Ex 2.3 k 2 1.222 10 9 m 1

2 2 n 2 P exp 2k 2 d
(a) E n
2ma 2 o
(a) d 10 A 10 10 10 m
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Exercise Solutions
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Test Your Understanding

P exp 2 1.222 10 9
10 10 10

or TYU 2.1
P 0.0868 8.68 % 1.054 10 34
(a) p
o
(b) d 100 A 100 10 10 m x 8 10 10
1.318 10 25 kg-m/s

P exp 2 1.222 10 9 100 10 10 (b) E
dE
p
d p2


p

or dp dp 2m
P 2.43 10 11 2.43 10 9 % 2p pp
p
2m m
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E
1.2 10 1.318 10
23 25

9.11 10 31
1.735 10 18 J or 10.85
eV
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Ex 2.5
2 m V O E
(a) k2
2

2 9.11 10 31 1.2 0.12 1.6 10 19 TYU 2.2
1.054 10 34 2
(a)
5.3236 10 9 m 1
E 0.8 1.6 10 19 1.28 10 19 e
Then V
0.12 0.12
T 16 1 1.054 10 34
1 .2 1.2 t 8.23 10 16
E 1.28 10 19

exp 2 5.3236 10 9 5 10 10 s
(b) Same as part (a), t 8.23 10 16 s
T 7.02 10 3 _______________________________________
0.12 0.12
(b) T 16 1 TYU 2.3
1.2 1.2
2 m V O E

exp 2 5.3236 10 9 25 10 10 (a) k2
2
12
T 3.97 10
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2 9.11 10 31 0.8 0.1 1.6 10 19
Ex 2.6 1.054 10 34
2

From Example 2.6, we have 1

= 4.286 10 9 m
13.58 0.0992
En eV 0.1 0.1
11.7 2 n 2 n2 T 16 1
0.8 0.8
E1 99.2 meV, E 2 24.8 meV,
E 3 11 .0 meV
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exp 2 4.2859 10 9 12 10 10
5
T 5.97 10
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________
(b)

k2

2 9.11 10 31 1.5 0.1 1.6 10 19
1.054 10 34
2

6.061 10 9 m 1
0 .1 0.1
T 16 1
1 .5 1.5

exp 2 6.061 10 9 12 10 10
7
T 4.79 10
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TYU 2.4
T 5 10 6

0.08 0.08
16 1 exp 2k 2 a
0 .8 0 .8
so that exp 2k 2 a 2.88 10 5
2k 2 a 12.571

k2

2 9.11 10 31 0.8 0.08 1.6 10 19
1.054 10 34 2

1
4.3467 10 9 m
Then

12.571
a 1.446 10 9 m

2 4.3467 10 9

o
or a 14.46 A
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