A COMPARATIVE STUDY OF SWITCHING LOSSES OF IGBTS UNDER HARD-

SWITCHING, ZERO-VOLTAGE-SWlTCHING AND ZERO-CURRENT-SWITCHING

Kunrong Wang, Fred C. Lee, Guichao Hua, and D u m Borojevic
Virginia Power Electronics Center
The Bradley Department of Electrical Engineering
Virginia Polytechnic Institute and State University
Blacksburg, VA 24061
Tel.: (703) 231-4536 Fax: (703) 231-6390

Abstract A high power IGBT tester, based on the
typical clamped inductive load circuit and incorporating
zero-voltage-transition and zero-current-transition soft-
switching schemes, has been developed. Both turn-on
losses, including the losses associated with reverse
recovery of the clamp (free-wheeling) diode, and turn-off
losses are measured and compared for slow and fast
IGBT devices. Benefits of zero-voltage-switching(ZVS)
and zero-current-switching (ZCS) operation of IGBTs
are demonstrated. The ZVS operation can reduce the
total switching losses by more than half, while the ZCS
reduces them by about 25% when compared with hard-
switching. The ZCS turn-off also relieves the voltage
stress of the IGBTs.
I. INTRODUCTION
Since its fledging years, the evolution of power
electronics has been conditioned by the advances in device
technology. Although a spectrum of power devices has been
available, their performances are still far from an ideal
switch. IGBTs with relatively low conduction loss and high
frequency capability are increasingly the preferred choice
for high power and/or high frequency applications. But the
switching losses in IGBTs remain obsessing the circuit
designers.
An array of zero-voltage-switching (ZVS) and zero-
current-switching (ZCS) converter topologies have been
developed to tackle the switching losses in power devices.
Noticeable among them are the classical parallel/series
resonant converters, quasi-/multi-resonant converters [11,
resonant voltage/curreint dc-link converters [2], and more
recently, the resonant pole converters [ 3 ] , and the zero-
voltage-transition (ZVT) and zero-current-transition (ZCT)
soft-switching PWM converters [4], [5] which unify the
merits of resonant converters and conventional PWM
converters, while avoiding their respective drawbacks.
Previously, Kurnia et al. [6], [7] analyzed the
various loss mechanisms in IGBTs, such as the di/dt
dependent loss due to (conductivity modulation lag, and the
tail currcnt bump loss in circuits with capacitive snubbers,
etc., and extracted the corresponding loss models. Petterteig
0-7803-1859-5/94/$4.001994 IEEE
et al. [8], [9] studied the IGBT turn-off losses in hard-
switching and with capacitive snubbers, and comprehensive
experimental results were given for different devices
operated with various values of capacitive snubbers, which
are mostly very large and only appear in resonant
converters. The influences of the gate driving resistance and
operating temperature were also addressed. In [IO], the
IGBT behavior as applied to ZCS quasi-resonant converter
was studied.
The objective of this paper is to provide a
comprehensive comparison of the switching losses and
switching behavior of IGBTs under hard-switching, and
typical zero-current and zero-voltage soft-switching
conditions as applied to soft-switching PWM
converters/iiverters, and to quantify the benefits which can
be derived in these circuit environments. The ZCT and
ZVT schemes are selected for implementation in a versatile
high power IGBT soft-switching tester because the voltage
and current ratings appearing on the switches in these
schemes are just the same as in hard-switching PWM
circuits, so fair comparison of switching losses can be easily
made. The test results for relatively slow and fast IGBT
devices are presented and analyzed.
11. SOFT-SWITCHING TESTER AND
SWITCHING LOSSES OF IGBTS
For the comparative study, a high power IGBT soft-
switching tester has been developed. As shown in Fig. l(a),
the test circuit with clamped inductive load is chosen as the
basic circuit configuration because the operating conditions
of the IGBT and the associated clamp (free-wheeling) diode
are identical to those in a single-ended buck or boost
converter, three-phase PWM buck inverterboost rectifier,
and other bridge type of converters. The recently proposed
ZCT and ZVT schemes [4],[51 are incorporated into the
basic hard-switching circuit to achieve both ZCS and ZVS
for PWM operations. As a result, the tester is very versatile.
The same main circuit can be easily rendered to work in
hard-switching, ZCS or ZVS operation just by simple re-
constructions of the soft-switching commutation branch.

1196
 In this section, the main switching losses in typical
hard-switching, ZCS and ZVS PWM operations will be
reviewed together with the explanations of the soft-
switching mechanisms of the tester.
A. Hard-switching Test Circuit
The circuit diagram and operating waveforms are
shown in Fig. 1. The switch (S)with the anti-parallel diode
(Ds)is the IGBT device under test (DUT). The clamp diode
( D I ) can be externally connected diode or the upper anti-
parallel diode in the half-bridge IGBT module package. The
circuit can run at either continuous or discontinuous current
mode (CCM or DCM) to meet different test requirements.
TDF
II DUT
(a) Test circuit diagram
S I
ID1
la 11 n 0 t4 15
(b) Switching waveforms
Fig. 1. Hard-switching test circuit.
During the tum-on process of IGBT (from to to t2
in Fig. I(b)), there is a large overlap between the switch
current (I,) and voltage (Vce). It results in the high turn-on
loss of the IGBT. Several turn-on loss mechanisms can be
identified: first, the loss associated with the establishment of
the conductivity modulation; second, the loss caused by the
reverse-recovery of the clamp diode. It is apparent that the
diode reverse recovery prolongs the current rise time
because much higher carrier modulation level has to be
established. This inevitably results in a substantial increase
of the turn-on loss.
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During the turn-off process (f345), the current
flowing in the DUT is cut off and forced to charge the
parasitic and/or snubber capacitor in parallel with the DUT,
and then the clamp diode turns on. Both the diode forward
recovery and the parasitic inductance in the loop formed by
C1, DI and S cause a high voltage spike on the IGBT. So,
its turn-off stress is very high, and may cause violation of
the reverse bias safe operating area (RBSOA). After the
initial transfer of the switch current to the clamp diode (t3-
rq), the remaining tail current decays slowly. Its decay is
determined predominantly by the recombination of excess
minority carriers, and, unlike with GTOs, gate driver plays
only a minor role [ 113. The only way for improvement is to
use faster IGBTs with reduced minority lifetime. Even for
very fast IGBTs available today, the tail still lasts for several
micro-seconds, and is the main source of the turn-off loss.
Therefore, in high power and/or high frequency
applications, hard-switching of IGBTs presents severe
switching loss and thermal reliability problems. It is
particularly attractive to employ soft-switching techniques
to minimize these losses.
B . ZCS Test Circuit
ZCS techniques are usually employed to alleviate
turn-off losses of devices that possess slow turn-off
mechanisms such as BJTs, GTOs and IGBTs. Figure 2(a)
shows the circuit diagram of the ZCS test circuit derived
from the ZCT scheme [ 5 ] . The part shown in thin lines is
the resonant commutation branch (SA, D2, D3, L, and C,)
added to the hard-switching test circuit shown in bold lines
to achieve ZCS turn-off for the DUT.
Figure 2(b) shows the ZCS operating waveforms.
The auxiliary branch is kept quiescent during most of the
operating cycle, and is only activated prior to the turn-off of
the DUT. After the auxiliary switch (SA) is turned on at to,
the current flowing through the DUT is diverted to the
commutation branch in a resonant fashion due to the voltage
on the resonant capacitor (C,) which was precharged during
turn-on of the DUT. With appropriate timing control and
design of characteristic impedance of the commutation
branch, a hold-off, or dead time can always be obtained after
the switch current reaches zero and the anti-parallel diode
(Ds) starts conducting. During the hold-off time, the DUT
can be turned off at zero current. At 11, the current in the
anti-parallel diode decays to zero, and the switch voltage
starts to rise. So, the overlap between the switch current and
voltage, is almost eliminated. After t i , the auxiliary switch
can be turned off, and the current remaining in the
commutation branch is transferred to the clamp diode.
The turn-on process (t3-t4) is essentially the same
as in the hard-switching test circuit except that a resonant
current, lasting from t3 to t5, and caused hy the polarity
change of the resonant capacitor (C,)is superimposed on the
switch current.
, DUT to create zero-voltage condition. This is gradually
(a) Test circuit diagram
S 1 , I
to tl 12
(b) Switching waveforms
Fig. 2. ZCS test circuit.
To conclude, the ZCS turn-off condition is created
by the external circuit so that the minority carrier level in
the IGBT is reduced during the soft reduction of the IGBT
collector current, and a part of the remaining carriers can be
recombined during the hold-off time. As a result, the tail
current and the corresponding turn-off loss is significantly
reduced. It should be noted that the ZCS operation in the
tester is basically ZCT-derived and does not affect the tum-
on loss.
C. ZVS Test Circuit
The ZVS techniques, including the ZVT scheme,
were fmt introduced to solve the capacitive turn-on problem
of power devices and the reverse recovery problem of the
slow or snappy diodes [4]. It is deemed most desirable for
high-frequency power conversion with power MOSFETs
where the source of the switching loss is mainly the
capacitive tum-on loss.
Figure 3(a) shows the circuit diagram of the ZVS
test circuit derived from the ZVT scheme [4]. Similar to the
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ZCS case, an extra resonant branch ( S I , Dl,L,. and C,) is
introduced. It is only activated prior to the turn-on of the
done by steering the current away from the free-wheeling
diode (D]), so that the switching losses associated with the
diode reverse recovery are practically eliminated. The
operating principle is illustrated in Fig. 3(b). The auxiliary
switch (SA) is turned on at to. From to to '1, the resonant
inductor takes over the current from the clamping diode, and
the ensuing resonance between L, and C, brings the voltage
across the switch to zero. After 12, the anti-parallel diode
(0s) free-wheels the surplus current beyond the main choke
current, and the DUT can be turned on under zero-voltage.
From (3 to (4, the current in the resonant inductor is
transferred back to the switch linearly.
I
D3
Vi
L (a) Test circuit diagram
Is
I I 1
m ti a a t4 (5s
(b) Switchingwaveforms
Fig. 3. ZVS test circuit.
During turn-off, due to the additional resonant
capacitor (Cr), the DUT voltage can not increase as quickly
as in the case of hard-switching. This can help to reduce the
turn-off loss of IGBT. But after the sudden removal of the
gate drive signal and the subsequent current fall, the ensuing
current bump remains and is even larger than the tail current
in the hard-switching case. So the capacitor has only
limited effectiveness in reducing the turn-off loss. Adding

larger capacitor is certainly helpful to further slow down the
voltage rise and reduce the turn-off loss, however, this may
not be practical from the circuit point of view since it
introduces higher circulating energy and additional
conduction loss in the commutation branch.
In summary, the ZVS operation eliminates the
IGBT turn-on loss and solves the intricate diode reverse
recovery problem. Moreover, it can also reduce the turn-off
loss to some extent.
111. TEST SET-UP
A. Tester Implementation
The high power IGBT tester corresponding to the
circuit diagrams shown in Figs. l(a)-3(a) has been built, and
used in this study. It features compact layout and
convenient re-connection capability to achieve either hard-
switching, ZVS, or ZCS operation.
The input voltage (Vi) can be as high as 900 V.
The inductive load is composed of a 0.43 mH choke
inductor with a laminated core in series with the damping
resistances (R) whose value can be changed from 0 to .3 1 !2,
as appropriate. The clamp diode (D1)was implemented
with four Philips BYT230PIV1000 diodes connected in
parallel. Each diode is rated at 1000 V/60 A and has
manufacturer-specified reverse recovery of 55 ns. The use
of external clamp diode provided the same reverse recovery
condition for all IGBTs that were tested. Altematively, the
anti-parallel diode inside a DUT package can also be used.
The gate drivers wed are TSC4421/4422 with the gate
resistance set to zero to get the fastest turn-on of the DUT.
The resonant elements (Lr and C,) can be changed easily.
As a consequence, high power IGBTs to l2O0 v/250 A
can be tested. Actually, other MOS-gated devices, such as
and be tested without any
modification.
TABLE I
SWITCIUNG LOSSES OF SLOW IGBT (IRGKI0050M12)
I
8. Test Conditions and Instrumentation
For turn-off loss tests, the tester is operated in DCM
at a switching frequency of 50 Hz, and a conduction
duration of 20-80 p to reach the desired current level. For
turn-on loss tests, the excitation frequency is increased to
800 Hz to make the tester run in CCM, and the conduction
duration is less than 40 ps. In both cases, the heat-sink
which holds the DUT and other circuit components is placed
on a hot plate. The case temperature is heated to 5OoC and
monitored during the whole test process.
The instrumentation used for switching loss
measurement is extremely critical. Different sensing
schemes have been tried. High current probes, such as
Tektronix CT4 or P6303, are found inadequate because of
their big physical dimensions and significant time delays.
Finally, the scheme similar to that in [8], [9] is used. The
switch current is sensed through the 10:1 current transformer
with shorted secondary, and then measured with a Tektronix
A6302 current probe, which can be calibrated and deskewed
to get satisfactory accuracy when used with the Tektronix
11401 digital oscilloscope and the llA16 current amplifier.
The switching losses are obtained by direct integration of
the product of the current and voltage waveforms on the
oscilloscope.
IV. TEST RESULTS AND INTERPRETATION
Several 1200 V/50 A IGBT modules from different
vendors have been tested under hard-switching, ZCS and
zvs conditions with the above set-up. All the devices are
tested at 35OV input voltage, and different current levels.
Results obtained from two representative devices are
reported below. One is International Rectifier
IRGKI0050M12, a relatively slow device (note that the
u l t r f i a s tseries
~ devices from the Same manufacturer are
much faster), and the other one is Powerex CM50DY-24H,
which is among the fastest IGBTs available today. The

I ~ Hard-switching (HS) I zcs I zvs I

Ice On Off Total On Off Total % On Off Total %
(A) (mJ) (mJ) (mJ) (mJ) (mJ) (mJ) ofHS (mJ) (mJ) (mJ) ofHS
25 2.62 3.01 5.63 2.62 1.18 3.80 67 .13 2.67 2.80 50

40 4.69 5.00 9.69 4.69 1.87 6.56 68 .27 4.55 4.82 50

45 5.64 5.54 11.18 5.64 2.05 7.69 69 .32 5.17 5.49 49

50 6.39 6.23 12.62 6.39 2.18 8.57 68 .40 5.74 6.14 49

60 8.42 7.57 15.99 8.42 2.76 11.18 70 .59 7.04 7.63 48

1199
 Hard-switching (HS) zcs zvs
Ice On Off Total On Off Total % On Off Total %
(A) (mJ> (mJ) (mJ) (mJ) (mJ) (mJ) ofHS (mJ) (mJ) (mJ) ofHS
25 1.80 1.23 3.03 1.80 .60 2.40 79 .21 1.02 1.23 41
40 3.05 2.20 5.25 3.05 .96 4.01 76 .38 1.85 2.23 42
45 3.47 2.42 5.89 3.47 1.07 4.54 77 .45 2.13 2.58 44
50 4.04 2.77 6.81 4.04 1.22 5.26 77 .50 2.37 2.87 42
60 4.97 3.36 8.33 4.97 1.34 6.31 76 .64 2.95 3.59 43

detailed test results of switching losses are summarized in

Tables I and 11, and also plotted in Figs. 4 and 5 . In Figs. 6
A. Turn-on Losses
and 7 are shown the switching waveforms under the As discussed in Section 11, the IGBT turn-on loss is
specified test conditions. mainly caused by the conductivity modulation lag which

. _ _ . _ - _ _ _ - _ _ . _ _ _ _ . _
ZVS
2V.S
40 60 70 0
Ice (A) 50 30 70
la, (A) 50 60

(a) Turn-on loss (a) Turn-on loss

Energy (mJ1 Energy (d)
3.5 I

3 - -

25 --
2 - -

1s --
1
- -
I
05 --
I I
60 70 0,b 30 so 70
Ice (A) 4o la, (A) 50

(b) 'Turn-off loss (b) Turn-off loss

_. (mJl
Enemv . , Energy (d)
18 I

I
30 60 70 0 1 I
40 Ice (A) 50 30
la, (A)
SO 70

(c) Total switching loss (c) Total swilching loss

Fig. 4. Switching losses vs. switch current for slow IGBT Fig. 5. Switching losses vs. switch current for fast IGBT
(IRGKI0050M12). (CM50DY-24H).
Vce = 350 V, Tc = 50 OC, driver TSC4421/2 with Rg = 0. Vce = 350 V, Tc = 50 OC, driver TSC4421/2 with Rg = 0.

1200
 Is

(a) Hard-switching tum-on @) Hard-switchingtumotf

(c) Tum-on in ZCS circuit (d) ZCS turn-off

(e) ZVS tum-on (f) Softer turn-off in ZVS circuit

Fig. 6. Switching waveforms for slow IGBT (IRGKI0050M12).

ZCS: Cr= .235 pF, Lr = 2.13 pH;ZVS: Cr = 5.4 nF, Lr = 4.3 pH.

produces an inductor-like behavior [7], and the reverse
recovery of the clamp diode. In order to make a fair
comparison, the same external clamp diode is used for tests
of different IGBTs. Comparison of the hard turn-on
waveforms in Figs. 6(a) and 7(a) shows that the turn-on
speed of the IGBT proper (fast device versus slow device)
strongly influences the tum-on loss and the peak diode
reverse recovery current. The faster the IGBT, the lower the
turn-on loss but the higher the peak reverse recovery current.
Nonetheless, faster device results in lower total tum-on
losses. For example, the turn-on loss of the slow device is
about 1.6 times that of the fast device.
With ZVS turn-on, the switch current rises after the
switch voltage is reduced to zero, and its rate of increase is
much slower. As a result, --on loss is almost eliminated.
There exists only a low dynamic saturation voltage drop on
the device while the current ramps up. The resulting loss is
considered here as turn-on loss because that the voltage drop

1201
 (a) Hadswitching turn-on (b) Hard-switching turn-off

(c) Turn-on in ZCS circuit (d) ZCS turn-off

(e) ZVS turn-on (9 Softer turn-off in ZVS circuit

Fig. 7 . IGBT switching waveforms for fast IGBT (CM50DY-24H).

ZCS: Cr = .235 pF,Lr = 2.13 pH; ZVS: Cr = 5.4 nF, Lr = 4.3 pH.

is due to the conductivity modulation and not due to the
parasitic inductance. This assumption needs further
investigation. Also, the diode reverse recovery current
becomes only very small, and is no longer determined by the
intrinsic property of the ZGBTs, as is clear in Figs. 6(e) and
7(e). The value of the resonant capacitor only affects the
energy circulation, and the turn-on loss remains almost the
same, since the stored energy is always recovered before
turn-on of the switch. On the other hand, the value of the
resonant inductance directly determines the rise rate of the
switch current, and therefore affects the turn-on loss.

1202
 The turn-on loss in ZCS operation is just the same
as in the case of hard-switching if the loss associated with
the resonant current (which reverses the polarity of the
resonant capacitor) is attributed to the increase in switch
conduction loss. Experimentally, it is also not easy to
differentiate between them.
* The turn-on loss of the tested IGBTs increases
approximately linearly with the current level, while the peak
reverse recovery current of the diode does not increase too
much.
B. Turn-off Losses
The tum-off loss of IGBTs consists of mainly two
parts: loss caused by the overlap between the rising voltage
and the falling current in the initial phase, and the
dissipation in the following current tail. Experiments reveal
that the latter contributes at least half of the total tum-off
loss for both the slow and fast devices under hard switching.
The turn-off loss of the fast device is less than half that of
the slow device, mainly due to the reduction of the tail
current magnitude. Even so, the tail current of the fast
device still persists for several micro-seconds, much longer
than the fall time specified by the manufacturer. In
addition, the fast IGBT has higher voltage overshoot.
With ZCS operation, the overlap between the
switch voltage and current is eliminated, but part of the tail
current still exists because the remaining carriers need
relatively long time to recombine completely. For the slow
and fast devices, the turn-off losses are reduced by about
two-thirds and twofold respectively when compared with
hard turn-off case. Besides, the energy stored in the
parasitic inductances of the device is pre-discharged and
recovered to the resonant capacitor. Therefore, the IGBT
does not have turn-off voltage spike, as can be seen in Figs.
6(d) and 7(d).
For ZVS operation, the turn-off is also softened
with the use of an external resonant capacitor across the
switch. The initial fall of the switch current is faster and the
voltage ramps up at a slower rate. Consequently, the tum-
off loss is also reduced. Loss reduction by a factor of two to
three is achievable with resonant capacitor as high as 100 to
450 nF [6]-[9]. This can be useful in low frequency
resonant converters. For typical soft-switched PWM
applications, however, in order to limit the circulating
energy and conduction loss, the resonant capacitance has to
be much smaller. For the tests here, a 5.4 nF mica capacitor
is used as the resonant capacitor, and the resulting decrease
in turn-off loss is about 8% for the slow device and 13% for
the fast device. The improvement is more pronounced
under lower switch current; a reasonable phenomenon
considering the fact that with the same capacitor, the
increase of the voltage across the switch takes more time
than in the case of high current. This suggests that for high
1203
current applications, the resonant capacitor value can be
higher to soften the turn-off.
C. Comparison of Total Switching Losses
As listed in Tables I and 11, the total switching loss
incurred in a complete switching cycle for the fast device is
about 52% of that for the slow device. Worth of notice is
that the turn-on loss (including the diode reverse recovery
loss) is higher than the turn-off loss for both devices. This
itself suggests the effectiveness of ZVS operation in the
reduction of IGBT switching losses. For the tested devices,
50% to 60% reduction is constantly observed. ZVS
operation also relieves the turn-on current stress since diode
reverse recovery is eliminated. Dually, ZCS operation
minimizes the turn-off voltage stress. It also helps to reduce
the total IGBT switching losses by approximately 25% for
the DUTs.
Note that the comparison of switching losses made
above is based on the assumption that the switch currents at
the instants of turn-on and turn-off are of the same value. In
actual applications, the switch current at turn-on is usually
lower than that at turn-off. As a result, the effectiveness of
ZCS operation in reducing the total switching losses
incurred in the circuit will increases. In the extreme case, if
the converter is operated in DCM where diode reverse
recovery is no longer a concern, ZCS operation is most
effective.
D. Other Factors Afecting Switching Losses
Other important factors which have apparent
influence on IGBT switching losses are the gate drive and
the device temperature. The higher the gate drive
resistance, the slower the switch turn-on speed, and the less
severe the reverse recovery current, but the higher the tum-
on loss. Its influence on the turn-off loss is much less. So
with a larger gate drive resistor, the comparison will favor
ZVS operation more. High device temperature aggravates
both the current tail loss at turn-off and the diode reverse
recovery loss at tum-on. The resultant effects on different
soft-switching schemes need to be addressed in an additional
endeavor.
V. CONCLUSIONS
A comparative study of the switching behavior and
losses of IGBTs under hard-switching, ZVS and ZCS
conditions is presented. To facilitate the comparison, a high
power IGBT soft-switching tester, based on the typical
clamped inductive load circuit and incorporating ZVT and
ZCT schemes, has been developed. Tum-on and tum-off
losses of two typical IGBTs are measured and compared,
and it is found that the turn-on loss of IGBTs, including
losses associated with the reverse recovery current of the
free-wheeling (clamp) diode, is usually higher than the turn-
off loss at the same current level, even for the case where zero-current switching converters," IEEE Trans.
'

fast reverse recovery diodes are used. The experimental Power Electronics, Vol. 4, no. 1, pp. 2-7, Jan. 1989.
results show clearly that benefits can be derived from both
ZCS and Z V S operation. Since ZVS operation essentially U11 Chokhawala, R., I. Catt and B. Pelly, "Gate Drive
Considerations for IGBT Modules," IEEE IASAM
eliminates tum-on loss and also helps to reduce turn-off loss,
Con& Rec., 1992,pp. 1186-1195.
it can reduce the total IGBT switching losses by more than
half compared with hard-switching, and is deemed most
effective in the reduction of IGBT switching losses. With
the ZCS operation, the turn-off loss reduction by a factor of
two to three can be easily achieved. Moreover, ZCS turn-
off also relieves the RBSOA stress of the IGBTs.

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