You are on page 1of 5

OBJECTIVE

To analyze fixed, self, and voltage-divider-bias JFET networks.


EQIPMENT REQUIRED
Instrument
DMM
Components
Resistors
(1) 1-k
(1) 1.2-k
(1) 2.2-k
(1) 3-k
(1) 10-k
(1) 10-M
(1) 1-k potentiometer
Transistors
(1) JFET 2N4166 (or equivalent)
Supplies
DC power supply
9V battery with snap on leads
RESUME OF THE THEORY
In this experiment three different biasing circuits will be analyzed. In theory the
procedure on biasing a JFET is the same as that for a BJT to particular given the drain curve
characteristics of the JFET and the external circuit connected to the JFET, a load line is
constructed involving VDD, VDS, and ID. The intersection of that load line with the drain curve
characteristics determines the quiescent operating point for the JFET. The characteristics of the
device are a property of the JFET; by contrast, the load line is dependent on the external circuit
elements connected to the JFET. The quiescent operating point is determined by the intersection
of the two curves.
In practice, JFETs, even of the same type, show considerable variation in their drain
curve characteristics. As a result, manufacturers often do not publish these curves; rather, the
values for the saturation current and the pinch-off voltage are given as part of the specifications.
This leads to an alternative approach to determine the quiescent condition for a JFET.
To begin, the transconductance curve, which shows the relationship between VGS and ID
for a particular JFET, is constructed from the saturation current, the pinch-off voltage, and
Shockleys equation. Next, a bias curve is constructed sensitive to the external circuit elements
connected to the JFET. The quiescent condition is determined by the intersection of the two
curves.
PART 1. FIXED-BIAS NETWORK
For the fixed-bias configuration, VGS will be set by an independent DC supply. The
vertical lines of constant VGS will intersect the transfer curve developed from Shockleys
equation.
a. Construct the network Fig. 13.1. Insert the measured value of RD.
b. Set VGS to zero volts and measure value of RD. Since VGS = 0V the resulting drain
current is the saturation value IDSS. Record below.
Rd= 1k VRD= 9.568 V
VDD=15V RD = 1 k
VRD 9.568 V
ID= = =9.568mA
RD 1K

VRD=1mV
Vp =VGS= -4.668v

IDSS(from measured)=
c. Make VGS increasingly negative until VRD= 1mV and(ID = VRD/RD = 1). Since ID is
very small (ID =0A), the resulting value of VGS is the pinch-off voltage. Record below.
Vp(measured)=
d. Using the values above for IDSS and Vp, Sketch the transfer curve on fig. 13.2 using
Shockleys equation.
e. If Vgs= -1V, determine IDQ from the curve of fig. 13.2. Show all work in fig. 13.2.
Label the straight line defined by VGS as the fixed-bias line.
2
1
ID=12 1
4.281

ID=5.92mA
IDQ(calculated)=
f. Set VGS=-1V in fig 13.1 and measure VRD. Calculate IDQ using the measured value
of RD and insert below. This is the measured value of ID.
VRD/ RD = 8.600 mA

VRD(measured)=
IDQ(from measured)=
g. Compare the measured and calculated values of IDQ
Measured-Calculated x 100%
Measured
(8.60-5.92/8.607)x100

PART 2. SELF-BIAS NETWORK


In the self-bias configuration, the magnitude of VGS is defined by the product of the
drain current Id and source resistance Rs.The network bias line will start at the origin and
intersect the transfer curve at the quiescent (DC) point of opeartion. The resultin drain current
and gate to source voltage can then be determined from the graph by drawing a horizontal and a
vertical line from the quiescent point to the axis, respectively.
a. Construct the network of fog 13.3. Insert the measured value of RD and RS.
b. Draw the self-bias line defined by VGS= -IDRS in fig 13.2 and find the network Q
point. Record the quiescent values of IDQ and VGSQ below. Label the straight linee
as the self-bias line.

IDQ(calculated)=
VGSQ(calculated)=

c. Calculate the values of VGS, VD, VDS and VG and record below.
VGS(calculated)=
VD(calculated)=
VS(calculated)=
VDS(calculated)=
VG(calculated)=

d. Measure the voltage VG, VDS,VD, VS, and Vg and compare with the results above
using the equation
|VmeasVcalc|
difference= x100
|Vcalc|

VGS(measured)=
VD(measured)=
VS(measured)=
VDS(measured)=
VG(measured)=

%VGS(calculated)=

%VD(calculated)=
%VS(calculated)=
%VDS(calculated)=
%VG(calculated)=

You might also like