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INTRODUCTION TO
POWER ELECTRONICS
SYSTEMS
POWER POWER
INPUT OUTPUT
vi , ii Power vo , i o
Processor
Source Load
measurement
Controller
reference
• Building Blocks:
– Input Power, Output Power
– Power Processor
– Controller
• Static applications
– involves non-rotating or moving mechanical
components.
– Examples:
• DC Power supply, Un-interruptible power
supply, Power generation and transmission
(HVDC), Electroplating, Welding, Heating,
Cooling, Electronic ballast
• Drive applications
– intimately contains moving or rotating
components such as motors.
– Examples:
• Electric trains, Electric vehicles, Air-
conditioning System, Pumps, Compressor,
Conveyer Belt (Factory automation).
AC voltage DC-DC
DIODE FILTER LOAD
RECTIFIER CONVERTER
AC LINE
VOLTAGE Vcontrol
(1Φ or 3Φ )
(derived from
feedback circuit)
Desired
temperature Indoor temperature
System and humidity Indoor
Controller sensors
Desired
humidity
• TNB sine-wave
supply gives zero DC
component!
+ +
Vs Vo
• We can use simple _ _
half-wave rectifier. A
fixed DC voltage is
now obtained. This is
a simple PE system.
Vo
vs
ig
ωt
ia
vo
+ +
vs vo
_ _
ωt
ig
1 π V
Vo = Vm sin (ωt )dωt = m [1 + cos α ]
2π α 2π
By controlling the firing angle, α,the output DC
voltage (after conversion) can be varied..
AC input DC output
DC to DC: CHOPPER
DC input DC output
DC to AC: INVERTER
DC input AC output
2. Environment issues
• Nuclear safety.
– Nuclear plants remain radioactive for thousands of
years.
• Burning of fossil fuel
– emits gases such as CO2, CO (oil burning), SO2, NOX
(coal burning) etc.
– Creates global warming (green house effect), acid rain
and urban pollution from smokes.
• Possible Solutions by application of PE. Examples:
– Renewable energy resources.
– Centralization of power stations to remote non-urban
area. (mitigation).
– Electric vehicles.
Power Electronics and 8
Drives (Version 3-2003).
Dr. Zainal Salam, UTM-JB
PE growth
• PE is an interdisciplinary field:
– Digital/analogue electronics
– Power and energy
– Microelectronics
– Control system
– Computer, simulation and software
– Solid-state physics and devices
– Packaging
– Heat transfer
Vswitch= Vin
Vin
• Power switch never
operates in linear
mode. SWITCH OFF (fully opened)
• Power Diodes
– Stud type
– “Hockey-puck”
type
• IGBT
– Module type:
Full bridge and
three phase
• IGCT
– Integrated with
its driver
+
Id Vd
_ Vr
Vf Vd
K (Cathode)
IF
trr= ( t2 - t0 )
t2
t0
VR
IRM
VRM
Snap-off
t0
VR
t1 t2
Soft-recovery
IF Sr= ( t2 - t1 )/(t1 - t0)
= 0.8
t1 t2
t0
VR
• Fast recovery
– Very low trr (<1us).
– Power levels at several hundred volts and
several hundred amps
– Normally used in high frequency circuits
• Schottky
– Very low forward voltage drop (typical 0.3V)
– Limited blocking voltage (50-100V)
– Used in low voltage, high current application
such as switched mode power supplies.
+ Ig>0
Vak Ig=0
Ig Ih
_ Vr
Ibo
G (Gate)
Vak
Vbo
K (Cathode)
+ ωt
+
vs vo
_ _ vo
ωt
ig
α ωt
• Inverter grade
– used in inverter and chopper
– Quite fast. Can be turned-on using “force-
commutation” method.
• Light activated
– Similar to phase controlled, but triggered by
pulse of light.
– Normally very high power ratings
• TRIAC
– Dual polarity thyristors
IC
IC
B (base) +
IB
VCE
_
IB
Driver IC1
Transistor IC Output
Transistor
B (base)
IC2
+
IB1 VCE
_
IB2
Biasing/ E (emitter)
stabilising
network
I c1 Ic2
β = I c I B1 = (I c1 + I c 2 ) I B1 = +
I B1 I B1
Ic2 I B2 I +I
= β1 + ⋅ = β1 + β 2 ⋅ B1 c1
I B2 I B1 I B1
= β1 + β 2 ⋅ (1 + β1 )
β = β1 + β 2 + β1β 2
Power Electronics and 21
Drives (Version 3-2003).
Dr. Zainal Salam, UTM-JB
Metal Oxide Silicon Field Effect
Transistor (MOSFET)
D (drain)
ID
ID
+
G (gate) VGS
+
_
VDS
+ _
VGS
_
VDS
S (source)
IC
IC
G (gate) +
VCE VGE
_
+
VGE _
E (emitter)
VCE (sat) VCE
IGBT: symbol v-i characteristics
+ Ig>0 Ig=0
Vak Ih
_ Vr
Ibo
G (Gate)
Ig
Vbo Vak
K (Cathode)
+
Vak
_
IGCT
Ig
K (Cathode)
IGCT: Symbol
• Ratings:
Voltage: Vak<6.5kV; Current: Ia<4kA.
Frequency<1KHz. Currently 10kV device is being
developed.
• Very low on state voltage: 2.7V for 4kA device
1GW
Thyristor
10MW
10MW GTO/IGCT
1MW
100kW IGBT
10kW
MOSFET
1kW
100W
R1 ig +
vak
-
Pulse source
R2 iak
From control
circuit D1 Q1 A1 To driver
• Main losses:
– forward conduction losses,
– blocking state losses
– switching losses
+Von−
Ideal switch:
– Zero voltage drop across it during turn-on (Von).
– Although the forward current ( Ion ) may be
large, the losses on the switch is zero.
• Real switch:
– Exhibits forward conduction voltage (on state)
(between 1-3V, depending on type of switch)
during turn on.
– Losses is measured by product of volt-drop
across the device Von with the current, Ion,
averaged over the period.
v P=vi i
v
i
Energy
time time
• Ideal switch:
– During turn-on and turn off, ideal switch requires
zero transition time. Voltage and current are
switched instantaneously.
– Power loss due to switching is zero
• Real switch:
– During switching transition, the voltage requires time
to fall and the current requires time to rise.
– The switching losses is the product of device
voltage and current during transition.
di
vin = vs + vce = Ls + vce
dt
di
vce = vin − Ls
dt
since di dt is negative (turning off)
di
vce = vin + Ls
dt
Power Electronics and 38
Drives (Version 3-2003).
Dr. Zainal Salam, UTM-JB
RCD Snubbers
• The voltage across the switch is bigger than the
supply (for a short moment). This is spike.
Ls
+
Vce
− Vce rated
time