Lec2A: Functional approximations, Linear: Maximize therm. res.

to environment, minimize to
( S A ) n n object
S= A+ B s , s= , B= 2 1 T ( t )=T a+ ( T oT a ) ekt
B t 2t 1 Newtons Law of Cooling:

Span (FSI) & FSO: FSI expressed as (Power) 1 1

where k= ; = ;
P2 mcR
1 dB=10 log
P1 ( ) (Force, Voltage, Current)
m=mass ( kg ) , c=specific heat

S2 Improve Time: Predictive, Lower R1, decrease sensor

1 dB=20 log ( )
S1
mass, decrease sensor heat capacity
Affects Thermal R: contact area (parallel R), material
Accuracy: deviation from ideal, needs specified (type of R), height/thicc (series R)
accuracy limits; cal. err., hysteresis, nonlinearity, Lec4: Temp. Devices: Resistance Temp. Detectors
saturation, repeatability, dead band, resolution, (RTDs), Thermistors, Thermocouples (relative), PN
special properties, excitation, dynamic char., env. juncs.
char. R RA
RTDs: positive temp. coeff. TCR= ; =
R T l
Combining uncertainty: C 21 + 22 + + 2n using RSS
T R =R (1+TCR T )
for uncorrelated inaccuracies (deviations)
Lec2B: Complex impedance (capacitive reactance): Thermistor (using semicon. Metal-oxide): PTC(+TCR)
1 or NTC(-TCR) NTC are precise, sensitive; highly
XC=
2 fC ; Bode plots: magnitude: non-linear (10% nom. Res.)
Zero Power resistance: Self-heating,
dB=20 log
( VV )

out
T=
r ( N2V 2) r V 2
S
=
S
=rIV low current, low duty

Impedance of R and C: Z = R 2+ X 2C ; LPF: cycle, high therm. res.

Simple Model:
XC 1
( ) R
( ) S1
( )
1

( )
S
V O=V I
Z ; HPF: V O=V I
Z ; f C=
2 RC ;
S=S 0 e
( T1 T1 ) ,
m
0
m=
ln
S0
,T=
1
+
ln
( )
S0
1 1 1 T0 m
0 = =RC
RC ; T1 T0

1 1 Thermocouples: requires two dissimilar conductors to

GC= = =G LPF form junc. Passive sensor gen. voltage (therm. batts.,
1+ ( RC )

2 2

Wiki. On RC: 1+
( ) 0
; not efficient). Relative sensor: Seebeck effect
produces V due to heat flow. d V a= a dT

Peltier effect: heat absorbed or given as current goes

RC 0 thru junc. dQ= idt
GR = = =GH PF
1+( RC )2

2 qV

( )
1+
0
PN Junction Sensor: I =I 0 e 2 KT
where I 0=sat . current
Lec5: ADC Converters: analog a person or thing
Bandpass: cascade LPF & HPF; passband=f H f L ; seen as comparable
Nyquist: f s >2 B to prevent aliasing, to accurately
peak @ f H f L
reconstruct sample 10x faster
Non-ideal amp.: gain always <1 w/o op. amp. n
V = V 0 T Quantization: n-bit ADC has 2 , begins @ 0, Err. Is
Lec3: Therm. Expansion: ; Contact
Sensor disrupts, Non-Contact Sensor better for higher 1 LSB
accuracy 2
Methods: Equilibrium (no gradient) vs. Predictive SAR: Start with MSB, compare, binary search
(rate)
Lec6: Open Loop Gain ( A V 0 ) very high yet

unreliable, Input Impedance ( Z ) ideally infinite,

Output Impedance ( Z out ) ideally zero, Offset

Voltage small voltage to get 0, Bandwidth (BW)
ideally infinite
Inverting OpAmp
Rf
(
V O= 1+
R1 () V +V3 +V )
a b c

Offset Compensation: Put equal impedance on the

positive terminal, along with any caps in there.
Birkhausen stability: (1) AB = 1 (2) Phase AB = 0 or
multiple of 360 deg.
V out R2 Lec7: Visible (400nm-700nm), UV (<400), IR (>700)
V1 is summing point ; = Quantum (UV to mid-IR), Thermal (mid- to far-IR),
V R1 Photon (radiation detector)
Summing Amp E=hv=F+ K m ,h is Plan k ' s , K m is mx . kin. energy
Insulator and semiconductors have full valence bands
conductive band empty
Metals have non-full highest energy band
Photodiode is pn semiconductor junction.
Si + Boron p-type; Si + (Phos. Or Arsenic) n-type
Photovoltaic Mode: no bias, no dark current, highest
Cj slow, high sensitivity
Photoconductive Mode (PC): lower Cj faster, linear,
noise
Difference Amp Photoresistor: Dark high R, Light low R
Phototransistor: npn, gain using phototransistor
Image Sensors: CCD each cell is device, CMOS each
pix. Amp
Lec8: Active Filters easy to design, v. accurate, low
noise, but limited GBWP
Non-Inverting LPF

Transresistance Amp

Inverting LPF

Non-inverting Summing Amplifier

Sallen Key
 Multivibrators: astable, monostable, bistable (RC, LC,
Crystal oscillators)
Freestanding: chain of n inverters
T =2 nt p , t p =R out C , odd # stages required, change
# change freq.
Relaxation oscillator: uses cap, res. charging it
1
f=

[ (
R 4 C ln 1+
R 1 R2
R3 )]
Active Band Pass: active gain, offset, wide passband
Lec9: V. ref. for biasing, threshold comp., ADC
Voltage div. simple but finicky, affected by a lot
Zener Diodes Regulator: stable v. out. w/ vary. Cur.
Bandgap Reference (Brokaw): 1.25V close to 1.22 eV
silicon bandgap, temp. independent
Oscillators: unstable circuit to produce per. Behavior