TIP35, TIP35A, TIP35B, TIP35C

NPN SILICON POWER TRANSISTORS

Designed for Complementary Use with the SOT-93 PACKAGE

TIP36 Series (TOP VIEW)

125 W at 25C Case Temperature B 1

25 A Continuous Collector Current
C 2
40 A Peak Collector Current

Customer-Specified Selections Available 3

E

This model is currently available, but not Pin 2 is in electrical contact with the mounting base.
recommended for new designs. For more MDTRAAA
information, see http://bourns.com/data/
global/pdfs/TSP1203_SOT93_POM.pdf.

absolute maximum ratings at 25C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT
TIP35 80
TIP35A 100
Collector-base voltage (IE = 0) V CBO V
TIP35B 120
TIP35C 140
TIP35 40
TIP35A 60
Collector-emitter voltage (IB = 0) VCEO V
TIP35B 80
TIP35C 100
Emitter-base voltage VEBO 5 V
Continuous collector current IC 25 A
Peak collector current (see Note 1) ICM 40 A
Continuous base current IB 5 A
Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 125 W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 3.5 W
Unclamped inductive load energy (see Note 4) LIC2 90 mJ
Operating junction temperature range Tj -65 to +150 C
Storage temperature range Tstg -65 to +150 C
Lead temperature 3.2 mm from case for 10 seconds TL 250 C

NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150C case temperature at the rate of 1 W/C.
3. Derate linearly to 150C free air temperature at the rate of 28 mW/C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 20 V.

 


JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS

electrical characteristics at 25C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TIP35 40
Collector-emitter TIP35A 60
V(BR)CEO IC = 30 mA IB = 0 V
breakdown voltage TIP35B 80
(see Note 5)
TIP35C 100
VCE = 80 V VBE = 0 TIP35 0.7
Collector-emitter VCE = 100 V VBE = 0 TIP35A 0.7
ICES mA
cut-off current VCE = 120 V VBE = 0 TIP35B 0.7
VCE = 140 V VBE = 0 TIP35C 0.7
Collector cut-off VCE = 30 V IB = 0 TIP35/35A 1
ICEO mA
current VCE = 60 V IB = 0 TIP35B/35C 1
Emitter cut-off
IEBO VEB = 5V IC = 0 1 mA
current
Forward current VCE = 4V IC = 1.5 A 25
hFE (see Notes 5 and 6)
transfer ratio VCE = 4V IC = 15 A 10 50
Collector-emitter IB = 1.5 A IC = 15 A 1.8
V CE(sat) (see Notes 5 and 6) V
saturation voltage IB = 5A IC = 25 A 4
Base-emitter VCE = 4V IC = 15 A 2
VBE (see Notes 5 and 6) V
voltage VCE = 4V IC = 25 A 4
Small signal forward
hfe VCE = 10 V IC = 1A f = 1 kHz 25
current transfer ratio
Small signal forward
|hfe | VCE = 10 V IC = 1A f = 1 MHz 3
current transfer ratio
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics
PARAMETER MIN TYP MAX UNIT
RJC Junction to case thermal resistance 1 C/W
RJA Junction to free air thermal resistance 35.7 C/W

resistive-load-switching characteristics at 25C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ton Turn-on time IC = 15 A IB(on) = 1.5 A IB(off) = -1.5 A 1.2 s
toff Turn-off time VBE(off) = -4.15 V RL = 2 tp = 20 s, dc 2% 0.9 s
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

 


JULY 1968 - REVISED SEPTEMBER 2002
2 Specifications are subject to change without notice.
 TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE

vs vs
COLLECTOR CURRENT BASE CURRENT
TCS635AA TCS635AB
1000 10

VCE(sat) - Collector-Emitter Saturation Voltage - V

VCE = 4 V
TC = 25C
tp = 300 s, duty cycle < 2%
hFE - DC Current Gain

100 10

10 01

IC = 25 A
IC = 300 mA IC = 20 A
IC = 1 A IC = 15 A
IC = 3 A IC = 10 A
1 001
01 10 10 100 0001 001 01 10 10 100
IC - Collector Current - A IB - Base Current - A

Figure 1. Figure 2.

BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS635AC
20
VCE = 4 V
TC = 25C
18
VBE - Base-Emitter Voltage - V

16

14

12

10

08

06
01 10 10 100
IC - Collector Current - A

Figure 3.

 


JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS635AA
100
tp = 300 s, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
IC - Collector Current - A

10

10

01
TIP35
TIP35A
TIP35B
TIP35C
001
10 10 100 1000
VCE - Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

vs
CASE TEMPERATURE
TIS635AA
140
Ptot - Maximum Power Dissipation - W

120

100

80

60

40

20

0
0 25 50 75 100 125 150
TC - Case Temperature - C

Figure 5.

 


JULY 1968 - REVISED SEPTEMBER 2002
4 Specifications are subject to change without notice.