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NMOS IV CHARACTERISTICS
Aim:
To analyse the IV characteristics of NMOS, including the following:-
1. Drain current (Id) vs Gate-source voltage (Vgs) input characteristics
Task-1: Effect of substrate source voltage (Vsb) on Id
Analyse the input characteristics of NMOS with V sb ranges from 0 to Vdd in
parametric analysis Body Effect
2. Drain current (Id) vs Drain-source voltage with various Vgs in parametric analysis --
output characteristics
Task-2: Channel length modulation
Enumerate the channel length modulation coefficient () for a fixed Vgs
Graph:-
Paste your results as screenshot from waveform window
Note: Highlight the threshold voltage in the graph with a tracer.
Graph:-
Paste your results as screenshot from waveform window
Note: Highlight the values of Id for various Vsb in the graph with a tracer.
Calculation:-
V Tn=V Tn 0+ ( (|2 f|+V sb )|2 f|)
Graph:-
Paste your results as screenshot from waveform window
Note: Highlight the various Vgs values in the graph with a label/tracer.
Calculation:-
Note down the values of Id and Vds at these points.
Result:-
Hence, the IV characteristics for NMOS transistor have been analysed.
EXPERIMENT - 2
PMOS IV CHARACTERISTICS
Aim:
To analyse the IV characteristics of PMOS, including the following:-
1. Drain current (Id) vs Gate-source voltage (Vgs) input characteristics
Task-1: Effect of substrate source voltage (Vsb) on Id
Analyse the input characteristics of PMOS with V sb ranges from 0 to Vdd in
parametric analysis body effect
2. Drain current (Id) vs Drain-source voltage with various Vgs in parametric analysis --
output characteristics
Task-2: Channel length modulation
Enumerate the channel length modulation coefficient () for a fixed Vgs
Graph:
Paste your results as screenshot from waveform window
Note: Highlight the threshold voltage in the graph with a tracer.
Graph:
Paste your results as screenshot from waveform window
Note: Highlight the values of Id for various Vsb in the graph with a tracer.
Calculation:
V Tp =V Tp0 + ( (|2 f|+V sb) |2 f|)
I d=K 'p ( W /L ) ( V gs V Tp )2
Graph:
Paste your results as screenshot from waveform window
Note: Highlight the various Vgs values in the graph with a label/tracer.
Calculation:
Note down the values of Id and Vds at those points.
Result:
Hence, the IV characteristics for PMOS transistor have been analysed.
EXPERIMENT - 3
CMOS IV CHARACTERISTICS
Aim:
To analyse the characteristics of CMOS inverter, including the following:-
NM H =V OH V IH
Where,
VIH = minimum HIGH input voltage
VIL = maximum LOW input voltage
VOH= minimum HIGH output voltage
VOL = maximum LOW output voltage
Therefore the noise margin the sized inverter is
In general, the total propagation delay is the average of the output rising and falling delay.
t pdr +t pdf
t pd =
2
Where,
t pdr = the delays for the output rising to 50%
Result:
Hence, the DC and transient characteristics for CMOS inverter has been analysed.