FDS6679AZ P-Channel PowerTrench MOSFET

January 2006

FDS6679AZ
P-Channel PowerTrench MOSFET
-30V, -13A, 9m
General Description Features
This P-Channel MOSFET is producted using Fairchild Max rDS(on) = 9.3m at VGS = -10V, ID = -13A
Semiconductors advanced PowerTrench process that has
been especially tailored to minimize the on-state Max rDS(on) = 14.8m at VGS = -4.5V, ID = -11A
resistance.
Extended VGS range (-25V) for battery applications
This device is well suited for Power Management and load
switching applications common in Notebook Computers HBM ESD protection level of 6kV typical (note 3)
and Portable Battery Packs. High performance trench technology for extremely low
rDS(on)

High power and current handing capability

RoHS Compliant

D
D 5
D 4
D
6 3

G 7 2
S
S 8 1
SO-8 S

MOSFET Maximum Ratings TA = 25C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage -30 V
VGS Gate to Source Voltage 25 V
Drain Current -Continuous (Note 1a) -13
ID A
-Pulsed -65
Power Dissipation for Single Operation (Note 1a) 2.5
PD (Note 1b) 1.2 W
(Note 1c) 1.0
TJ, TSTG Operating and Storage Temperature -55 to +150 C

Thermal Characteristics
RJA Thermal Resistance , Junction to Ambient (Note 1a) 50 C/W
RJC Thermal Resistance , Junction to Case (Note 1) 25 C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity
FDS6679AZ FDS6679AZ 13 12mm 2500 units

2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDS6679AZ Rev. B
 Electrical Characteristics TJ = 25C unless otherwise noted

FDS6679AZ P-Channel PowerTrench MOSFET

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250A, VGS = 0V -30 V
BVDSS Breakdown Voltage Temperature ID = -250A, referenced to
-20 mV/C
TJ Coefficient 25C
IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS=0V -1 A
IGSS Gate to Source Leakage Current VGS = 25V, VDS=0V 10 A

On Characteristics (Note 2)
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250A -1 -1.9 -3 V
VGS(th) Gate to Source Threshold Voltage ID = -250A, referenced to
6.5 mV/C
TJ Temperature Coefficient 25C
VGS = -10V, ID = -13A 7.7 9.3
VGS = -4.5V, ID = -11A 11.8 14.8
rDS(on) Drain to Source On Resistance m
VGS = -10V, ID = -13A,
10.7 13.4
TJ = 125C
gFS Forward Transconductance VDS = -5V, ID = -13A 55 S

Dynamic Characteristics
Ciss Input Capacitance 2890 3845 pF
VDS = -15V, VGS = 0V,
Coss Output Capacitance 500 665 pF
f = 1MHz
Crss Reverse Transfer Capacitance 495 745 pF

Switching Characteristics (Note 2)

td(on) Turn-On Delay Time 13 24 ns
tr Rise Time VDD = -15V, ID = -1A 15 27 ns
VGS = -10V, RGS = 6
td(off) Turn-Off Delay Time 210 336 ns
tf Fall Time 92 148 ns
VDS = -15V, VGS = -10V,
Qg Total Gate Charge 68 96 nC
ID = -13A
Qg Total Gate Charge 38 54 nC
VDS = -15V, VGS = -5V,
Qgs Gate to Source Gate Charge 10 nC
ID = -13A
Qgd Gate to Drain Charge 17 nC

Drain-Source Diode Characteristic

VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A -0.7 -1.2 V
trr Reverse Recovery Time IF = -13A, di/dt = 100A/s 40 ns
Qrr Reverse Recovery Charge IF = -13A, di/dt = 100A/s -31 nC

Notes:
1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RJC is guaranteed by design while RCA is determined by the users board design.

a) 50C/W when b)105C/W when c) 125C/W when

mounted on a 1 in2 mounted on a .04 in2 mounted on a
pad of 2 oz copper pad of 2 oz copper minimun pad

Scale 1 : 1 on letter size paper

2: Pulse Test:Pulse Width <300s, Duty Cycle <2.0%

3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

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FDS6679AZ Rev. B
 FDS6679AZ P-Channel PowerTrench MOSFET
Typical Characteristics TJ = 25C unless otherwise noted

70 4.0

DRAIN TO SOURCE ON-RESISTANCE

PULSE DURATION = 80s PULSE DURATION = 80s
60 DUTY CYCLE = 0.5%MAX 3.5 DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)

VGS = - 3.5V
50 VGS = - 10V 3.0

NORMALIZED
VGS = - 5V VGS = - 4V
40 2.5
VGS = - 4.5V
VGS = - 4.5V
30 2.0
VGS = - 4V

20 VGS = - 3.5V 1.5

VGS = - 5V
10 VGS = - 3V 1.0
VGS = - 10V
0 0.5
0 1 2 3 4 0 10 20 30 40 50 60 70
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT(A)

Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain

Current and Gate Voltage

1.6 30
DRAIN TO SOURCE ON-RESISTANCE

ID = -13A
ID = -13A PULSE DURATION = 80s
VGS = -10V DUTY CYCLE = 0.5%MAX
1.4
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (m)

20
NORMALIZED

1.2
TJ = 150oC

1.0
10

0.8 TJ = 25oC

0.6 0
-80 -40 0 40 80 120 160 3.0 4.5 6.0 7.5 9.0 10
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance vs Junction Figure 4. On-Resistance vs Gate to Source

Temperature Voltage

70 100
-IS, REVERSE DRAIN CURRENT (A)

VGS = 0V
PULSE DURATION = 80s
-ID, DRAIN CURRENT (A)

60 DUTY CYCLE = 0.5%MAX

10
50
TJ = 150oC
1
40
TJ = 25oC
30 TJ = 150oC 0.1

20 TJ = -55oC
TJ = 25oC 0.01
10
TJ = -55oC
0 1E-3
2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward

Voltage vs Source Current

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FDS6679AZ Rev. B
 FDS6679AZ P-Channel PowerTrench MOSFET
Typical Characteristics TJ = 25C unless otherwise noted

10 10000
-VGS, GATE TO SOURCE VOLTAGE(V)

8 Ciss

CAPACITANCE (pF)
6 VDD = -10V Coss

VDD = -15V
1000
Crss
4
VDD = -20V

2 f = 1MHz
VGS = 0V

0 100
0 15 30 45 60 75 0.1 1 10 30
Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage

1000 20

100 -IAS, AVALANCHE CURRENT(A)

10
10 TJ = 150oC
TJ = 25oC
-Ig(uA)

0.1
TJ = 25oC TJ = 125oC
0.01

1E-3

1E-4 1
-2 -1 0 1 2
0 5 10 15 20 25 30 35 10 10 10 10 10
-VGS(V) tAV, TIME IN AVALANCHE(ms)

Figure 9. Ig vs VGS Figure 10. Unclamped Inductive Switching

Capability

16 100
10us
14
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)

12 10
VGS = -10V 100us
10
1ms
8 1 10ms

6 VGS = -4.5V 100ms

1s
4 0.1
OPERATION IN THIS SINGLE PULSE DC
2 AREA MAY BE TJ = MAX RATED
LIMITED BY rDS(on) TA = 25oC
0 0.01
25 50 75 100 125 150 0.1 1 10 30 100
TA, AMBIENT TEMPERATURE (oC) -VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 11. Maximum Continuous Drain Current vs Figure 12. Forward Bias Safe Operating Area
Ambient Temperature

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FDS6679AZ Rev. B
 FDS6679AZ P-Channel PowerTrench MOSFET
Typical Characteristics TJ = 25C unless otherwise noted

2000
TA = 25oC
P(PK), PEAK TRANSIENT POWER (W)

1000 VGS = 10V

FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
100 150 T
A
I = I25 ------------------------
125

10

SINGLE PULSE
1
-5 -4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10 10
t, PULSE WIDTH (s)

Figure 13. Single Pulse Maximum Power Dissipation

2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
NORMALIZED THERMAL

0.2
IMPEDANCE, ZJA

0.1
0.1 0.05
0.02 PDM
0.01

t1
0.01 t2
SINGLE PULSE NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJA x RJA + TA
1E-3
-5 -4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION(s)

Figure 14. Transient Thermal Response Curve

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FDS6679AZ Rev. B
 TRADEMARKS

FDS6679AZ P-Channel PowerTrench MOSFET

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:
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when properly used in accordance with instructions for use system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17

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FDS6679AZ Rev. B