PD - 95810

AUTOMOTIVE MOSFET
IRFP1405
HEXFET Power MOSFET
Features D
Advanced Process Technology VDSS = 55V
Ultra Low On-Resistance
175C Operating Temperature
Fast Switching RDS(on) = 5.3m
G
Repetitive Avalanche Allowed up to Tjmax
ID = 95A
S

Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche S
D
rating . These features combine to make this design an extremely G
efficient and reliable device for use in Automotive applications and
a wide variety of other applications. TO-247AC

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 160
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 110 A
ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) 95
IDM Pulsed Drain Current c 640
PD @TC = 25C Power Dissipation 310 W
Linear Derating Factor 2.0 W/C
VGS Gate-to-Source Voltage 20 V
EAS (Thermally limited) Single Pulse Avalanche Energy d 530 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value h 1060
IAR Avalanche Current c See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy g mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw y
10 lbf in (1.1N m)y
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case * 0.49
Rcs Case-to-Sink, Flat, Greased Surface 0.24 C/W
RJA Junction-to-Ambient * 40

HEXFET is a registered trademark of International Rectifier.

* R is measured at TJ approximately 90C
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IRFP1405
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.058 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 4.2 5.3 m VGS = 10V, ID = 95A e
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 77 S VDS = 25V, ID = 95A
IDSS Drain-to-Source Leakage Current 20 A VDS = 55V, VGS = 0V
250 VDS = 55V, VGS = 0V, TJ = 125C
IGSS Gate-to-Source Forward Leakage 200 nA VGS = 20V
Gate-to-Source Reverse Leakage -200 VGS = -20V
Qg Total Gate Charge 120 180 ID = 95A
Qgs Gate-to-Source Charge 30 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 53 VGS = 10V e
td(on) Turn-On Delay Time 12 VDD = 28V
tr Rise Time 160 ID = 95A
td(off) Turn-Off Delay Time 140 ns RG = 2.6
tf Fall Time 150 VGS = 10V e
LD Internal Drain Inductance 5.0 Between lead, D

nH 6mm (0.25in.)
G
LS Internal Source Inductance 13 from package
S
and center of die contact
Ciss Input Capacitance 5600 VGS = 0V
Coss Output Capacitance 1310 VDS = 25V
Crss Reverse Transfer Capacitance 350 pF = 1.0MHz
Coss Output Capacitance 6550 VGS = 0V, VDS = 1.0V, = 1.0MHz
Coss Output Capacitance 920 VGS = 0V, VDS = 44V, = 1.0MHz
Coss eff. Effective Output Capacitance 1750 VGS = 0V, VDS = 0V to 44V f
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current 95 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current 640 integral reverse
(Body Diode) c p-n junction diode.
VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 95A, VGS = 0V e
trr Reverse Recovery Time 70 110 ns TJ = 25C, IF = 95A, VDD = 28V
Qrr Reverse Recovery Charge 170 260 nC di/dt = 100A/s e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Repetitive rating; pulse width limited by Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax, starting TJ = 25C, L = 0.12mH Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
R G = 25, IAS = 95A, VGS =10V. Part not avalanche performance.
recommended for use above this value. This value determined from sample failure population. 100%
Pulse width 1.0ms; duty cycle 2%. tested to this value in production.
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 IRFP1405

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

100

10 4.5V 4.5V

60s PULSE WIDTH 60s PULSE WIDTH

Tj = 25C Tj = 175C
1 10
0.1 1 10 100 0.1
0 11 10
10 100
100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 140

T J = 25C T J = 25C
Gfs, Forward Transconductance (S)

120
ID, Drain-to-Source Current ()

T J = 175C
100

80
100 T J = 175C
60

40

VDS = 25V
20 VDS = 10V
60s PULSE WIDTH
380s PULSE WIDTH
10
4.0 5.0 6.0 7.0 8.0 9.0 10.0
0
0 20 40 60 80 100
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance

Vs. Drain Current
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IRFP1405

10000 20
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= 95A VDS= 44V

VGS, Gate-to-Source Voltage (V)

C rss = C gd VDS= 28V
8000 16
C oss = C ds + C gd
C, Capacitance (pF)

Ciss
6000 12

4000 8

Coss
2000
4
FOR TEST CIRCUIT
Crss SEE FIGURE 13
0
0
0 40 80 120 160 200
1 10 100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.0 10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

T J = 175C 1000
100.0

100 100sec
10.0

T J = 25C 10

1.0
1 1msec
Tc = 25C
Tj = 175C 10msec
VGS = 0V Single Pulse DC
0.1 0.1
0.2 0.6 1.0 1.4 1.8 2.2 1 10 100 1000

VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRFP1405

200 2.5

RDS(on) , Drain-to-Source On Resistance

LIMITED BY PACKAGE ID = 95A
VGS = 10V

150 2.0
ID , Drain Current (A)

(Normalized)
100 1.5

50
1.0

0
0.5
25 50 75 100 125 150 175
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T C , Case Temperature (C)
T J , Junction Temperature (C)

Fig 9. Maximum Drain Current Vs. Fig 10. Normalized On-Resistance

Case Temperature Vs. Temperature

D = 0.50
Thermal Response ( Z thJC )

0.1 0.20
0.10
0.05
R1 R2
0.01 0.02 R1 R2 Ri (C/W) i (sec)
J C
0.01 J 0.2529 0.00080

1 2
1 2 0.2368 0.014283
Ci= i/Ri
0.001 Ci i/Ri
SINGLE PULSE
Notes:
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP1405

2000
15V

EAS, Single Pulse Avalanche Energy (mJ)

ID
TOP 16A
20A
L DRIVER
VDS 1500 BOTTOM 95A

RG D.U.T +
V
- DD
IAS A 1000
20V
VGS
tp 0.01

Fig 12a. Unclamped Inductive Test Circuit 500

V(BR)DSS
tp

0
25 50 75 100 125 150 175

Starting T J, Junction Temperature (C)

I AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG

10 V
QGS QGD 4.0
VGS(th) Gate threshold Voltage (V)

VG
3.5

Charge 3.0
ID = 250A
Fig 13a. Basic Gate Charge Waveform
2.5

2.0
L
VCC
DUT
0 1.5
1K -75 -50 -25 0 25 50 75 100 125 150 175

T J , Temperature ( C )

Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature
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 IRFP1405

10000

1000 Duty Cycle = Single Pulse

Allowed avalanche Current vs
Avalanche Current (A)

avalanche pulsewidth, tav

assuming Tj = 25C due to
avalanche losses. Note: In no
100 0.01 case should Tj be allowed to
exceed Tjmax
0.05

10
0.10

1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

600 Notes on Repetitive Avalanche Curves , Figures 15, 16:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:
500 ID = 95A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

temperature far in excess of T jmax. This is validated for

every part type.
400
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
300
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
200 avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
100 6. I av = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25C in Figure 15, 16).
0 tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav f
Starting T J , Junction Temperature (C) ZthJC(D, tav ) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC

Fig 16. Maximum Avalanche Energy Iav = 2DT/ [1.3BVZth]
Vs. Temperature EAS (AR) = PD (ave)tav
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IRFP1405

Driver Gate Drive

D.U.T Period D=
P.W.
Period
+ P.W.

*
VGS=10V
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
- Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
- + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

RG dv/dt controlled by RG VDD Re-Applied

Driver same type as D.U.T. + Voltage Body Diode Forward Drop
I SD controlled by Duty Factor "D" - Inductor Curent
D.U.T. - Device Under Test

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs

RD
V DS

VGS
D.U.T.
RG
+
-VDD

10V
Pulse Width 1 s
Duty Factor 0.1 %

Fig 18a. Switching Time Test Circuit

VDS
90%

10%
VGS
td(on) tr t d(off) tf

Fig 18b. Switching Time Waveforms

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 IRFP1405
TO-247AC Package Outline
Dimensions are shown in millimeters
'5* 

1

TO-247AC Part Marking Information

Notes: T his part marking information applies to devices produced before 02/26/2001 or for
parts manufactured in GB.

EXAMPLE: THIS IS AN IRFPE30

WITH ASS EMBLY PART NUMBER
LOT CODE 3A1Q INTERNAT IONAL
RECTIFIER IRF PE30

LOGO
3A1Q 9302

AS S EMBLY DATE CODE

LOT CODE (YYWW)
YY = YEAR
WW = WEEK

Notes : T his part marking information applies to devices produced after 02/26/2001

EXAMPLE: THIS IS AN IRFPE30

WITH ASS EMBLY PART NUMBER
LOT CODE 5657 INTERNATIONAL
AS SEMBLED ON WW 35, 2000 RECTIFIER IRFPE 30

IN T HE AS S EMBLY LINE "H" LOGO 035H

56 57
DATE CODE
AS SEMB LY YEAR 0 = 2000
LOT CODE WEEK 35
LINE H

TO-247AC packages are not recommended for Surface Mount Application.

Data and specifications subject to change without notice.
This product has been designed and qualified for Automotive [Q101] market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
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