BC856 THRU BC859

Small Signal Transistors (PNP)

SOT-23
FEATURES
PNP Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.

Especially suited for automatic insertion in

.122 (3.1)
.118 (3.0)
.016 (0.4)
Top View thick- and thin-film circuits.

These transistors are subdivided into three groups A, B

3
.056 (1.43)
.052 (1.33)

and C according to their current gain. The type BC856 is

available in groups A and B, however, the types BC857,
1 2 BC858 and BC859 can be supplied in all three groups.
The BC859 is a low noise type.
max. .004 (0.1)

.037(0.95) .037(0.95)
.007 (0.175)
.005 (0.125)

As complementary types, the NPN transistors

.045 (1.15)
.037 (0.95)

BC846 BC849 are recommended.

MECHANICAL DATA
.102 (2.6)
.016 (0.4) .016 (0.4) .094 (2.4) Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking code
Dimensions in inches and (millimeters) Type Marking Type Marking
BC856A 3A BC859A 4A
Pin configuration B 3B B 4B
1 = Base, 2 = Emitter, 3 = Collector. BC857A 3E C 4C
B 3F
C 3G
BC858A 3J
B 3K
C 3L

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified

Symbol Value Unit

Collector-Base Voltage BC856 VCBO 80 V
BC857 VCBO 50 V
BC858, BC859 VCBO 30 V
Collector-Emitter Voltage BC856 VCES 80 V
BC857 VCES 50 V
BC858, BC859 VCES 30 V
Collector-Emitter Voltage BC856 VCEO 65 V
BC857 VCEO 45 V
BC858, BC859 VCEO 30 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 100 mA
Peak Collector Current I CM 200 mA
Peak Base Current I BM 200 mA
Peak Emitter Current I EM 200 mA
Power Dissipation at TSB = 50 C Ptot 3101) mW
Junction Temperature Tj 150 C
Storage Temperature Range TS 65 to +150 C

4/98
 BC856 THRU BC859
ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified

Symbol Min. Typ. Max. Unit

h-Parameters
at VCE = 5 V, IC = 2 mA, f = 1 kHz
Current Gain Current Gain Group A hfe 220
B hfe 330
C hfe 600
Input Impedance Current Gain Group A hie 1.6 2.7 4.5 k
B hie 3.2 4.5 8.5 k
C hie 6 8.7 15 k
Output Admittance Current Gain Group A hoe 18 30 S
B hoe 30 60 S
C hoe 60 110 S
Reverse Voltage Transfer Ratio
Current Gain Group A hre 1.5 104
B hre 2 104
C hre 3 104

DC Current Gain
at VCE = 5 V, IC = 10 A
Current Gain Group A hFE 90
B hFE 150
C hFE 270
at VCE = 5 V, IC = 2 mA

Current Gain Group A hFE 110 180 220
B hFE 200 290 450
C hFE 420 520 800
Thermal Resistance Junction to Substrate RthSB 3201) K/W
Backside
Thermal Resistance Junction to Ambient Air RthJA 4501) K/W
Collector Saturation Voltage
at IC = 10 mA, IB = 0.5 mA VCEsat 90 300 mV
at IC = 100 mA, IB = 5 mA VCEsat 250 650 mV
Base Saturation Voltage
at IC = 10 mA, IB = 0.5 mA VBEsat 700 mV
at IC = 100 mA, IB = 5 mA VBEsat 900 mV
Base-Emitter Voltage
at VCE = 5 V, IC = 2 mA VBE 600 660 750 mV
at VCE = 5 V, IC = 10 mA VBE 800 mV
Collector-Emitter Cutoff Current
at VCE = 80 V BC856 ICES 0.2 15 nA
at VCE = 50 V BC857 ICES 0.2 15 nA
at VCE = 30 V BC858, BC859 ICES 0.2 15 nA
at VCE = 80 V, Tj = 125 C BC856 ICES 4 A
at VCE = 50 V, Tj = 125 C BC857 ICES 4 A
at VCE = 30 V, Tj = 125 C BC858, BC859 ICES 4 A
at VCB = 30 V ICBO 15 nA
at VCB = 30 V, Tj = 150 C ICBO 5 A

Gain-Bandwidth Product fT 150 MHz

at VCE = 5 V, IC = 10 mA, f = 100 MHz
1) Device on fiberglass substrate, see layout
 BC856 THRU BC859
ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified

Symbol Min. Typ. Max. Unit

Collector-Base Capacitance CCBO 6 pF
at VCB = 10 V, f = 1 MHz
Noise Figure
at VCE = 5 V, IC = 200 A, RG = 2 k,
f = 1 kHz, f = 200 Hz BC856, BC857, BC858 F 2 10 dB
BC859 F 1 4 dB
Noise Figure
at VCE = 5 V, IC = 200 A, RG = 2 k,
f = 3015000 Hz BC859 F 1.2 4 dB

.30 (7.5)

.12 (3)

.04 (1)
.08 (2)

.04 (1)

.08 (2)
.59 (15)
.03 (0.8)
.47 (12)

0.2 (5)

.06 (1.5)
Dimensions in inches (millimeters)
.20 (5.1)

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859

Collector-base cutoff current

versus junction temperature

nA BC856...BC859
4
10

3
10
-ICBO

2
10

10

Test voltage -VCBO :

equal to the given
1 maximum value -VCEO
typical
maximum
-1
10
0 100 200 C
Tj
 RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859

Collector current Collector saturation voltage

versus base-emitter voltage versus collector current

mA BC856...BC859 V BC856...BC859
102 -V 0.5
CE = 5 V -IC -IB = 20
Tamb = 25 C
5
4
3
0.4
2
-IC -VCEsat
10
0.3
5
4
3

2
0.2
1
Tamb = 100 C
5 25 C
4 0.1
3

2
-50 C

10-1 0
0 0.5 1V 10-1 2 5 1 2 5 10 2 5 102 mA
-VBE -IC
RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859