OPA627

OPA
627
OPA637
OPA
627

Precision High-Speed
Difet OPERATIONAL AMPLIFIERS

FEATURES APPLICATIONS
VERY LOW NOISE: 4.5nV/Hz at 10kHz PRECISION INSTRUMENTATION
FAST SETTLING TIME: FAST DATA ACQUISITION
OPA627550ns to 0.01% DAC OUTPUT AMPLIFIER
OPA637450ns to 0.01%
OPTOELECTRONICS
LOW VOS: 100V max
SONAR, ULTRASOUND
LOW DRIFT: 0.8V/C max
HIGH-IMPEDANCE SENSOR AMPS
LOW IB: 5pA max
HIGH-PERFORMANCE AUDIO CIRCUITRY
OPA627: Unity-Gain Stable
ACTIVE FILTERS
OPA637: Stable in Gain 5

DESCRIPTION High frequency complementary transistors allow in-

The OPA627 and OPA637 Difet operational amplifi-
ers provide a new level of performance in a precision
FET op amp. When compared to the popular OPA111
op amp, the OPA627/637 has lower noise, lower offset
voltage, and much higher speed. It is useful in a broad
range of precision and high speed analog circuitry.
The OPA627/637 is fabricated on a high-speed, dielec-
trically-isolated complementary NPN/PNP process. It
operates over a wide range of power supply voltage
4.5V to 18V. Laser-trimmed Difet input circuitry
provides high accuracy and low-noise performance
comparable with the best bipolar-input op amps.
creased circuit bandwidth, attaining dynamic perform-
ance not possible with previous precision FET op
amps. The OPA627 is unity-gain stable. The OPA637
is stable in gains equal to or greater than five.
Difet fabrication achieves extremely low input bias
currents without compromising input voltage noise
performance. Low input bias current is maintained
over a wide input common-mode voltage range with
unique cascode circuitry.
The OPA627/637 is available in plastic DIP, SOIC
and metal TO-99 packages. Industrial and military
temperature range models are available.

7
Trim +VS
Trim
1 5

Output
6

+In In
3 2

Difet , Burr-Brown Corp. VS

4

International Airport Industrial Park Mailing Address: PO Box 11400, Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 Tel: (520) 746-1111 Twx: 910-952-1111
Internet: http://www.burr-brown.com/ FAXLine: (800) 548-6133 (US/Canada Only) Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132

1989 Burr-Brown Corporation PDS-998H Printed in U.S.A. March, 1998

SBOS165
SPECIFICATIONS
ELECTRICAL
At TA = +25C, and VS = 15V, unless otherwise noted.

OPA627BM, BP, SM OPA627AM, AP, AU

OPA637BM, BP, SM OPA637AM, AP, AU
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
OFFSET VOLTAGE (1)
Input Offset Voltage 40 100 130 250 V
AP, BP, AU Grades 100 250 280 500 V
Average Drift 0.4 0.8 1.2 2 V/C
AP, BP, AU Grades 0.8 2 2.5 V/C
Power Supply Rejection VS = 4.5 to 18V 106 120 100 116 dB
INPUT BIAS CURRENT (2)
Input Bias Current VCM = 0V 1 5 2 10 pA
Over Specified Temperature VCM = 0V 1 2 nA
SM Grade VCM = 0V 50 nA
Over Common-Mode Voltage VCM = 10V 1 2 pA
Input Offset Current VCM = 0V 0.5 5 1 10 pA
Over Specified Temperature VCM = 0V 1 2 nA
SM Grade 50 nA
NOISE
Input Voltage Noise
Noise Density: f = 10Hz 15 40 20 nV/Hz
f = 100Hz 8 20 10 nV/Hz
f = 1kHz 5.2 8 5.6 nV/Hz
f = 10kHz 4.5 6 4.8 nV/Hz
Voltage Noise, BW = 0.1Hz to 10Hz 0.6 1.6 0.8 Vp-p
Input Bias Current Noise
Noise Density, f = 100Hz 1.6 2.5 2.5 fA/Hz
Current Noise, BW = 0.1Hz to 10Hz 30 60 48 fAp-p
INPUT IMPEDANCE
Differential 1013 || 8 * || pF
Common-Mode 1013 || 7 * || pF
INPUT VOLTAGE RANGE
Common-Mode Input Range 11 11.5 * * V
Over Specified Temperature 10.5 11 * * V
Common-Mode Rejection VCM = 10.5V 106 116 100 110 dB
OPEN-LOOP GAIN
Open-Loop Voltage Gain VO = 10V, RL = 1k 112 120 106 116 dB
Over Specified Temperature VO = 10V, RL = 1k 106 117 100 110 dB
SM Grade VO = 10V, RL = 1k 100 114 dB
FREQUENCY RESPONSE
Slew Rate: OPA627 G =
1, 10V Step 40 55 * * V/s
OPA637 G =
4, 10V Step 100 135 * * V/s
Settling Time: OPA627 0.01% G =
1, 10V Step 550 * ns
0.1% G =
1, 10V Step 450 * ns
OPA637 0.01% G =
4, 10V Step 450 * ns
0.1% G =
4, 10V Step 300 * ns
Gain-Bandwidth Product: OPA627 G=1 16 * MHz
OPA637 G = 10 80 * MHz
Total Harmonic Distortion + Noise G = +1, f = 1kHz 0.00003 * %
POWER SUPPLY
Specified Operating Voltage 15 * V
Operating Voltage Range 4.5 18 * * V
Current 7 7.5 * * mA
OUTPUT
Voltage Output RL = 1k 11.5 12.3 * *
Over Specified Temperature 11 11.5 * * V
Current Output VO = 10V 45 * mA
Short-Circuit Current 35 +70/55 100 * * * mA
Output Impedance, Open-Loop 1MHz 55 *
TEMPERATURE RANGE
Specification: AP, BP, AM, BM, AU 25 +85 * * C
SM 55 +125 C
Storage: AM, BM, SM 60 +150 * * C
AP, BP, AU 40 +125 * * C
J-A: AM, BM, SM 200 * C/W
AP, BP 100 * C/W
AU 160 C/W

* Specifications same as B grade.

NOTES: (1) Offset voltage measured fully warmed-up. (2) High-speed test at TJ = +25C. See Typical Performance Curves for warmed-up performance.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.

OPA627, 637 2
PIN CONFIGURATIONS ABSOLUTE MAXIMUM RATINGS(1)
Top View DIP/SOIC Supply Voltage .................................................................................. 18V
Input Voltage Range .............................................. +VS + 2V to VS 2V
Differential Input Range ....................................................... Total VS + 4V
Offset Trim Power Dissipation ........................................................................ 1000mW
1 8 No Internal Connection
Operating Temperature
In 2 7 +VS M Package .................................................................. 55C to +125C
P, U Package ............................................................. 40C to +125C
+In 3 6 Output Storage Temperature
M Package .................................................................. 65C to +150C
VS 4 5 Offset Trim P, U Package ............................................................. 40C to +125C
Junction Temperature
M Package .................................................................................. +175C
P, U Package ............................................................................. +150C
Lead Temperature (soldering, 10s) ............................................... +300C
SOlC (soldering, 3s) ................................................................... +260C

NOTE: (1) Stresses above these ratings may cause permanent damage.
Top View TO-99
No Internal Connection

PACKAGE/ORDERING INFORMATION
8 +VS
Offset Trim PACKAGE DRAWING TEMPERATURE
1 7
PRODUCT PACKAGE NUMBER(1) RANGE

OPA627AP Plastic DIP 006 25C to +85C

In OPA627BP Plastic DIP 006 25C to +85C
2 6 Output
OPA627AU SOIC 182 25C to +85C
OPA627AM TO-99 Metal 001 25C to +85C
OPA627BM TO-99 Metal 001 25C to +85C
3 5 OPA627SM TO-99 Metal 001 55C to +125C

+In 4 Offset Trim OPA637AP Plastic DIP 006 25C to +85C

OPA637BP Plastic DIP 006 25C to +85C
VS OPA637AU SOIC 182 25C to +85C
OPA637AM TO-99 Metal 001 25C to +85C
Case connected to VS. OPA637BM TO-99 Metal 001 25C to +85C
OPA637SM TO-99 Metal 001 55C to +125C

NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.

ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.

3 OPA627, 637
TYPICAL PERFORMANCE CURVES
At TA = +25C, and VS = 15V, unless otherwise noted.

INPUT VOLTAGE NOISE SPECTRAL DENSITY TOTAL INPUT VOLTAGE NOISE vs BANDWIDTH
1k 100
p-p
Noise Bandwidth:
Voltage Noise (nV/ Hz)

Input Voltage Noise (V)

10 0.1Hz to indicated
frequency.
100

10
0.1
RMS

1 0.01
1 10 100 1k 10k 100k 1M 10M 1 10 100 1k 10k 100k 1M 10M
Frequency (Hz) Bandwidth (Hz)

VOLTAGE NOISE vs SOURCE RESISTANCE OPEN-LOOP GAIN vs FREQUENCY

1k 140

120
+
Voltage Noise (nV/ Hz)

100 OPA637
Voltage Gain (dB)

RS
100
80

60
Comparison with
OPA627 + Resistor
OPA27 Bipolar Op 40
10 OPA627
Amp + Resistor
20
Spot Noise
Resistor Noise Only at 10kHz 0

1 20
100 1k 10k 100k 1M 10M 100M 1 10 100 1k 10k 100k 1M 10M 100M
Source Resistance ( ) Frequency (Hz)

OPA627 GAIN/PHASE vs FREQUENCY OPA637 GAIN/PHASE vs FREQUENCY

30 90 30 90

20 120 20 120
Phase (Degrees)
Phase (Degrees)
Gain (dB)

Gain (dB)

Phase Phase
75 Phase
Margin Gain
10 150 10 150
Gain

0 180 0 180

10 210 10 210
1 10 100 1 10 100
Frequency (MHz) Frequency (MHz)

OPA627, 637 4
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25C, and VS = 15V, unless otherwise noted.

OPEN-LOOP GAIN vs TEMPERATURE OPEN-LOOP OUTPUT IMPEDANCE vs FREQUENCY

125 100

80

Output Resistance ()
120
Voltage Gain (dB)

60
115
40

110
20

105 0
75 50 25 0 25 50 75 100 125 2 20 200 2k 20k 200k 2M 20M
Temperature (C) Frequency (Hz)

COMMON-MODE REJECTION vs
COMMON-MODE REJECTION vs FREQUENCY INPUT COMMON MODE VOLTAGE
140 130
Common-Mode Rejection Ratio (dB)

Common-Mode Rejection (dB)

120 OPA637
120
100
110
80 OPA627

60 100

40
90
20

0 80
1 10 100 1k 10k 100k 1M 10M 15 10 5 0 5 10 15
Frequency (Hz) Common-Mode Voltage (V)

POWER-SUPPLY REJECTION AND COMMON-MODE

POWER-SUPPLY REJECTION vs FREQUENCY REJECTION vs TEMPERATURE
140 125

120
Power-Supply Rejection (dB)

PSR
120
CMR and PSR (dB)

100
VS PSRR 627
80 and 637 CMR
115
60
+VS PSRR 627
40 637 110

20

0 105
1 10 100 1k 10k 100k 1M 10M 75 50 25 0 25 50 75 100 125
Frequency (Hz) Temperature (C)

5 OPA627, 637
 TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25C, and VS = 15V, unless otherwise noted.

SUPPLY CURRENT vs TEMPERATURE OUTPUT CURRENT LIMIT vs TEMPERATURE

8 100

+IL at VO = 0V
80
7.5
Supply Current (mA)

Output Current (mA)

+IL at VO = +10V
60
7
40
IL at VO = 0V
6.5
20
IL at VO = 10V

6 0
75 50 25 0 25 50 75 100 125 75 50 25 0 25 50 75 100 125
Temperature (C) Temperature (C)

OPA627 GAIN-BANDWIDTH AND SLEW RATE OPA637 GAIN-BANDWIDTH AND SLEW RATE
vs TEMPERATURE vs TEMPERATURE
24 60 120 160
Slew Rate
Gain-Bandwidth (MHz)
Gain-Bandwidth (MHz)

20 100 140

Slew Rate (V/s)

Slew Rate (V/s)

Slew Rate

16 55 80 120

GBW
GBW
12 60 100

8 50 40 80
75 50 25 0 25 50 75 100 125 75 50 25 0 25 50 75 100 125
Temperature (C) Temperature (C)

OPA627 TOTAL HARMONIC DISTORTION + NOISE OPA637 TOTAL HARMONIC DISTORTION + NOISE
vs FREQUENCY vs FREQUENCY
0.1 G = +1 G = +10 1
G = +10 G = +50
VI + VO = 10V VI + VO = 10V
VI + VO = 10V VI + VO = 10V
600 600
100pF 5k 100pF 600 600
0.01 0.1 5k 100pF 5k 100pF
549
549 102
THD+N (%)

THD+N (%)

0.001 Measurement BW: 80kHz 0.01

G = +50
G = +10 Measurement BW: 80kHz

0.0001 0.001
G = +1

G = +10
0.00001 0.0001
20 100 1k 10k 20k 20 100 1k 10k 20k
Frequency (Hz) Frequency (Hz)

OPA627, 637 6
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25C, and VS = 15V, unless otherwise noted.

INPUT BIAS AND OFFSET CURRENT INPUT BIAS CURRENT

vs JUNCTION TEMPERATURE vs POWER SUPPLY VOLTAGE
10k 20
NOTE: Measured fully
1k warmed-up.

Input Bias Current (pA)

15
Input Current (pA)

TO-99
100
IB
10 Plastic
10 IOS DIP, SOIC

5
1

TO-99 with 0807HS Heat Sink

0.1 0
50 25 0 25 50 75 100 125 150 4 6 8 10 12 14 16 18
Junction Temperature (C) Supply Voltage (VS)

INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE INPUT OFFSET VOLTAGE WARM-UP vs TIME
1.2 50

Beyond Linear Offset Voltage Change (V)

Input Bias Current Multiplier

Common-Mode Range
1.1 25

1 0

0.9 25
Beyond Linear
Common-Mode Range

0.8 50
15 10 5 0 5 10 15 0 1 2 3 4 5 6
Common-Mode Voltage (V) Time From Power Turn-On (Min)

MAX OUTPUT VOLTAGE vs FREQUENCY SETTLING TIME vs CLOSED-LOOP GAIN

30 100
Output Voltage (Vp-p)

Error Band: 0.01%

Settling Time (s)

20 10

OPA627
OPA637

10 1 OPA637
OPA627

0 0.1
100k 1M 10M 100M 1 10 100 1000
Frequency (Hz) Closed-Loop Gain (V/V)

7 OPA627, 637
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25C, and VS = 15V, unless otherwise noted.

SETTLING TIME vs ERROR BAND SETTLING TIME vs LOAD CAPACITANCE

1500 3
CF

RI +5V OPA627 OPA637

RF RI 2k 500 OPA637
5V Error Band: G = 4
Settling Time (ns)

Settling Time (s)

1000 +
RF 2k 2k 2
2k CF 6pF 4pF 0.01%

OPA627 OPA627
500 1 G = 1
G = 1

OPA637
G = 4
0 0
0.001 0.01 0.1 1 10 0 150 200 300 400 500
Error Band (%) Load Capacitance (pF)

APPLICATIONS INFORMATION RF < 4RI

The OPA627 is unity-gain stable. The OPA637 may be used
OPA627 OPA627
to achieve higher speed and bandwidth in circuits with noise

gain greater than five. Noise gain refers to the closed-loop + +

Buffer
gain of a circuit as if the non-inverting op amp input were Non-Inverting Amp
RI G<5
being driven. For example, the OPA637 may be used in a
non-inverting amplifier with gain greater than five, or an
inverting amplifier of gain greater than four. RF < 4R

When choosing between the OPA627 or OPA637, it is OPA627 RI

OPA627
important to consider the high frequency noise gain of your
circuit configuration. Circuits with a feedback capacitor +
Bandwidth
+
Inverting Amp
(Figure 1) place the op amp in unity noise-gain at high Limiting G < |4|
frequency. These applications must use the OPA627 for
proper stability. An exception is the circuit in Figure 2,
where a small feedback capacitance is used to compensate OPA627 OPA627
for the input capacitance at the op amps inverting input. In

this case, the closed-loop noise gain remains constant with + +

frequency, so if the closed-loop gain is equal to five or Integrator Filter

greater, the OPA637 may be used.

FIGURE 1. Circuits with Noise Gain Less than Five Require

the OPA627 for Proper Stability.

OPA627, 637 8
OFFSET VOLTAGE ADJUSTMENT amp contributes little additional noise. Below 1k, op amp
The OPA627/637 is laser-trimmed for low offset voltage noise dominates over the resistor noise, but compares
and drift, so many circuits will not require external adjust- favorably with precision bipolar op amps.
ment. Figure 3 shows the optional connection of an external
potentiometer to adjust offset voltage. This adjustment should
CIRCUIT LAYOUT
not be used to compensate for offsets created elsewhere in a
As with any high speed, wide bandwidth circuit, careful
system (such as in later amplification stages or in an A/D
layout will ensure best performance. Make short, direct
converter) because this could introduce excessive tempera-
interconnections and avoid stray wiring capacitanceespe-
ture drift. Generally, the offset drift will change by approxi-
cially at the input pins and feedback circuitry.
mately 4V/C for 1mV of change in the offset voltage due
to an offset adjustment (as shown on Figure 3). The case (TO-99 metal package only) is internally connected
to the negative power supply as it is with most common op
amps. Pin 8 of the plastic DIP, SOIC, and TO-99 packages
C2 has no internal connection.
Power supply connections should be bypassed with good
high frequency capacitors positioned close to the op amp
C1 R2 pins. In most cases 0.1F ceramic capacitors are adequate.

The OPA627/637 is capable of high output current (in
+
OPA637
excess of 45mA). Applications with low impedance loads or
capacitive loads with fast transient signals demand large
R1 C1 = CIN + CSTRAY currents from the power supplies. Larger bypass capacitors
R1 C1 such as 1F solid tantalum capacitors may improve dynamic
C2 = performance in these applications.
R2

FIGURE 2. Circuits with Noise Gain Equal to or Greater than

Five May Use the OPA637. +VS

100k
NOISE PERFORMANCE 7 10k to 1M
Some bipolar op amps may provide lower voltage noise 1 Potentiometer
2
performance, but both voltage noise and bias current noise 5 (100k preferred)
contribute to the total noise of a system. The OPA627/637 3 6
is unique in providing very low voltage noise and very low +
OPA627/637
current noise. This provides optimum noise performance 4
over a wide range of sources, including reactive source 10mV Typical
Trim Range
impedances. This can be seen in the performance curve VS
showing the noise of a source resistor combined with the
noise of an OPA627. Above a 2k source resistance, the op FIGURE 3. Optional Offset Voltage Trim Circuit.

Non-inverting Buffer

2 2

6 6
Out Out
3 In 3
In + +
OPA627 OPA627

TO-99 Bottom View

Inverting
In

OPA627 3 4
2
5
6
Out
3
+ 2 6
Board Layout for Input Guarding:
Guard top and bottom of board. 7
Alternateuse Teflon standoff for sen- 1
sitive input pins. 8 No Internal Connection

Teflon E.I. du Pont de Nemours & Co. To Guard Drive

FIGURE 4. Connection of Input Guard for Lowest IB.

9 OPA627, 637
INPUT BIAS CURRENT takes approximately 500ns. When the output is driven into
Difet fabrication of the OPA627/637 provides very low the positive limit, recovery takes approximately 6s. Output
input bias current. Since the gate current of a FET doubles recovery of the OPA627 can be improved using the output
approximately every 10C, to achieve lowest input bias clamp circuit shown in Figure 5. Diodes at the inverting
current, the die temperature should be kept as low as pos- input prevent degradation of input bias current.
sible. The high speed and therefore higher quiescent current
of the OPA627/637 can lead to higher chip temperature. A
simple press-on heat sink such as the Burr-Brown model +VS
807HS (TO-99 metal package) can reduce chip temperature
by approximately 15C, lowering the IB to one-third its
5k
warmed-up value. The 807HS heat sink can also reduce low- (2)
frequency voltage noise caused by air currents and thermo- HP 5082-2811
electric effects. See the data sheet on the 807HS for details.
ZD1 Diode Bridge
Temperature rise in the plastic DIP and SOIC packages can BB: PWS740-3
be minimized by soldering the device to the circuit board. 1k
Wide copper traces will also help dissipate heat.
5k ZD1 : 10V IN961
The OPA627/637 may also be operated at reduced power
supply voltage to minimize power dissipation and tempera- RF
ture rise. Using 5V power supplies reduces power dissipa- VI VS
tion to one-third of that at 15V. This reduces the IB of TO- RI
+
VO

99 metal package devices to approximately one-fourth the OPA627 Clamps output

at VO = 11.5V
value at 15V.
Leakage currents between printed circuit board traces can FIGURE 5. Clamp Circuit for Improved Overload Recovery.
easily exceed the input bias current of the OPA627/637. A
circuit board guard pattern (Figure 4) reduces leakage
effects. By surrounding critical high impedance input cir- CAPACITIVE LOADS
cuitry with a low impedance circuit connection at the same As with any high-speed op amp, best dynamic performance
potential, leakage current will flow harmlessly to the low- can be achieved by minimizing the capacitive load. Since a
impedance node. The case (TO-99 metal package only) is load capacitance presents a decreasing impedance at higher
internally connected to VS. frequency, a load capacitance which is easily driven by a
Input bias current may also be degraded by improper han- slow op amp can cause a high-speed op amp to perform
dling or cleaning. Contamination from handling parts and poorly. See the typical curves showing settling times as a
circuit boards may be removed with cleaning solvents and function of capacitive load. The lower bandwidth of the
deionized water. Each rinsing operation should be followed OPA627 makes it the better choice for driving large capaci-
by a 30-minute bake at 85C. tive loads. Figure 6 shows a circuit for driving very large
load capacitance. This circuits two-pole response can also
Many FET-input op amps exhibit large changes in input
be used to sharply limit system bandwidth. This is often
bias current with changes in input voltage. Input stage useful in reducing the noise of systems which do not require
cascode circuitry makes the input bias current of the
the full bandwidth of the OPA627.
OPA627/637 virtually constant with wide common-mode
voltage changes. This is ideal for accurate high input-
impedance buffer applications.
RF
1k
PHASE-REVERSAL PROTECTION
The OPA627/637 has internal phase-reversal protection. 200pF
Many FET-input op amps exhibit a phase reversal when the G = +1
CF
input is driven beyond its linear common-mode range. This RO BW 1MHz
20
is most often encountered in non-inverting circuits when the
input is driven below 12V, causing the output to reverse + CL
into the positive rail. The input circuitry of the OPA627/637 RF OPA627 5nF
G = 1+ R1
does not induce phase reversal with excessive common- R1
mode voltage, so the output limits into the appropriate rail. Optional Gain For Approximate Butterworth Response:
Gain > 1 2 RO CL
CF = RF >> RO
RF
OUTPUT OVERLOAD
1
When the inputs to the OPA627/637 are overdriven, the f3dB =
2 RF RO CF CL
output voltage of the OPA627/637 smoothly limits at ap-
proximately 2.5V from the positive and negative power
FIGURE 6. Driving Large Capacitive Loads.
supplies. If driven to the negative swing limit, recovery

OPA627, 637 10
INPUT PROTECTION
The inputs of the OPA627/637 are protected for voltages
between +VS + 2V and VS 2V. If the input voltage can
exceed these limits, the amplifier should be protected. The
diode clamps shown in Figure 7a will prevent the input
voltage from exceeding one forward diode voltage drop
beyond the power supplieswell within the safe limits. If
the input source can deliver current in excess of the maxi-
mum forward current of the protection diodes, use a series
resistor, RS, to limit the current. Be aware that adding
resistance to the input will increase noise. The 4nV/Hz
theoretical thermal noise of a 1k resistor will add to the
4.5nV/Hz noise of the OPA627/637 (by the square-root of
the sum of the squares), producing a total noise of 6nV/Hz.
Resistors below 100 add negligible noise.
Sometimes input protection is required on I/V converters of
inverting amplifiers (Figure 7b). Although in normal opera-
tion, the voltage at the summing junction will be near zero
(equal to the offset voltage of the amplifier), large input
transients may cause this node to exceed 2V beyond the
power supplies. In this case, the summing junction should
be protected with diode clamps connected to ground. Even
with the low voltage present at the summing junction,
common signal diodes may have excessive leakage current.
Since the reverse voltage on these diodes is clamped, a
diode-connected signal transistor can be used as an inexpen-
sive low leakage diode (Figure 7b).
+VS

Leakage current in the protection diodes can increase the

total input bias current of the circuit. The specified maxi- D VO
+ OPA627
mum leakage current for commonly used diodes such as the D
D: IN4148 25nA Leakage
1N4148 is approximately 25nAmore than a thousand Optional RS
2N4117A 1pA Leakage
times larger than the input bias current of the OPA627/637. VS Siliconix
Leakage current of these diodes is typically much lower and =
may be adequate in many applications. Light falling on the (a)
junction of the protection diodes can dramatically increase
leakage current, so common glass-packaged diodes should
IIN
be shielded from ambient light. Very low leakage can be

achieved by using a diode-connected FET as shown. The VO
2N4117A is specified at 1pA and its metal case shields the D D + OPA627
junction from light. D: 2N3904
=
(b)

NC

FIGURE 7. Input Protection Circuits.

LARGE SIGNAL RESPONSE SMALL SIGNAL RESPONSE

(A) (B)

FPO

When used as a unity-gain buffer, large common-mode input voltage steps G=1
produce transient variations in input-stage currents. This causes the rising
edge to be slower and falling edges to be faster than nominal slew rates +
observed in higher-gain circuits. OPA627

FIGURE 8. OPA627 Dynamic Performance, G = +1.

11 OPA627, 637
 LARGE SIGNAL RESPONSE

+10 +10
VOUT (V)

VOUT (V)
0 (C) 0 (D)

10 10

6pF(1)
NOTE: (1) Optimum value will
When driven with a very fast input step (left), common-mode
depend on circuit board lay-
transients cause a slight variation in input stage currents which
out and stray capacitance at
will reduce output slew rate. If the input step slew rate is reduced
the inverting input. 2k
(right), output slew rate will increase slightly.
G = 1
2k
+ VOUT
OPA627

FIGURE 9. OPA627 Dynamic Performance, G = 1.

OPA637 OPA637
LARGE SIGNAL RESPONSE SMALL SIGNAL RESPONSE

+10 +100
VOUT (mV)
VOUT (V)

0 (E) 0 (F)

FPO
10 100

4pF(1)

2k
G=5

+ VOUT
OPA637
500
NOTE: (1) Optimum value will depend on circuit
board layout and capacitance at inverting input.

FIGURE 10. OPA637 Dynamic Response, G = 5.

OPA627, 637 12
 Error Out
/
RI 2k

OPA627 OPA637
CF
RI , R 1 2k 500
HP- CF 6pF 4pF
5082- 2k Error Band 0.5mV 0.2mV
2835 (0.01%)
+15V

RI
High Quality
5V NOTE: CF is selected for best settling time performance
Pulse Generator
depending on test fixture layout. Once optimum value is
51 Out
+ determined, a fixed capacitor may be used.

15V

FIGURE 11. Settling Time and Slew Rate Test Circuit.

Gain = 100
OPA637 CMRR 116dB
In +
Bandwidth 1MHz
RF
5k 2 25k 25k 5
Input Common-Mode
Range = 5V INA105
RG
3pF Differential
101 Output
Amplifier 6
3
+
RF 25k
5k 25k

+In + 1
OPA637
Differential Voltage Gain = 1 + 2RF /RG

FIGURE 12. High Speed Instrumentation Amplifier, Gain = 100.

Gain = 1000
OPA637 CMRR 116dB
In +
Bandwidth 400kHz
RF
5k 10k 100k 5
2
Input Common-Mode
Range = 10V INA106
RG
3pF Differential
101 Output
Amplifier 6
3
+
RF 10k
5k 100k

+In + 1
OPA637

Differential Voltage Gain = (1 + 2RF /RG) 10

FIGURE 13. High Speed Instrumentation Amplifier, Gain = 1000.

This composite amplifier uses the OPA603 current-feedback op amp to

R2 provide extended bandwidth and slew rate at high closed-loop gain. The
feedback loop is closed around the composite amp, preserving the
precision input characteristics of the OPA627/637. Use separate power
supply bypass capacitors for each op amp.
A1 + *Minimize capacitance at this node.
VI + VO
GAIN A1 R1 R2 R3 R4 3dB SLEW RATE
OPA603 RL 150
R1 for 10V Out (V/V) OP AMP () (k) () (k) (MHz) (V/s)
100 OPA627 50.5(1) 4.99 20 1 15 700
R3 * R4 1000 OPA637 49.9 4.99 12 1 11 500

NOTE: (1) Closest 1/2% value.

FIGURE 14. Composite Amplifier for Wide Bandwidth.

13 OPA627, 637
 PACKAGE OPTION ADDENDUM

www.ti.com 23-Mar-2010

PACKAGING INFORMATION

Orderable Device Status (1) Package Package Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Type Drawing Qty
OPA627AM NRND TO-99 LMC 8 20 Green (RoHS & AU N / A for Pkg Type
no Sb/Br)
OPA627AP ACTIVE PDIP P 8 50 TBD Call TI Call TI
OPA627APG4 ACTIVE PDIP P 8 50 TBD Call TI Call TI
OPA627AU ACTIVE SOIC D 8 75 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
OPA627AU/2K5 ACTIVE SOIC D 8 2500 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
OPA627AU/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
OPA627AUE4 ACTIVE SOIC D 8 75 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
OPA627AUG4 ACTIVE SOIC D 8 75 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
OPA627BM NRND TO-99 LMC 8 1 Green (RoHS & AU N / A for Pkg Type
no Sb/Br)
OPA627BP ACTIVE PDIP P 8 50 TBD Call TI Call TI
OPA627BPG4 ACTIVE PDIP P 8 50 TBD Call TI Call TI
OPA627SM NRND TO-99 LMC 8 20 Green (RoHS & AU N / A for Pkg Type
no Sb/Br)
OPA637AM NRND TO-99 LMC 8 20 Green (RoHS & AU N / A for Pkg Type
no Sb/Br)
OPA637AM2 OBSOLETE TO-99 LMC 8 TBD Call TI Call TI
OPA637AP ACTIVE PDIP P 8 50 TBD Call TI Call TI
OPA637APG4 ACTIVE PDIP P 8 50 TBD Call TI Call TI
OPA637AU ACTIVE SOIC D 8 75 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
OPA637AU/2K5 ACTIVE SOIC D 8 2500 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
OPA637AU/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
OPA637AUE4 OBSOLETE SOIC D 8 TBD Call TI Call TI
OPA637AUG4 ACTIVE SOIC D 8 75 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
OPA637BM NRND TO-99 LMC 8 20 Green (RoHS & AU N / A for Pkg Type
no Sb/Br)
OPA637BM1 OBSOLETE TO-99 LMC 8 TBD Call TI Call TI
OPA637BP ACTIVE PDIP P 8 50 TBD Call TI Call TI
OPA637BPG4 ACTIVE PDIP P 8 50 TBD Call TI Call TI
OPA637SM NRND TO-99 LMC 8 20 Green (RoHS & AU N / A for Pkg Type
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 23-Mar-2010

(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.

Addendum-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 27-Nov-2012

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
OPA627AU/2K5 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
OPA637AU/2K5 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 27-Nov-2012

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
OPA627AU/2K5 SOIC D 8 2500 367.0 367.0 35.0
OPA637AU/2K5 SOIC D 8 2500 367.0 367.0 35.0

Pack Materials-Page 2
 IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as components) are sold subject to TIs terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TIs terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TIs goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or enhanced plastic are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products Applications
Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive
Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications
Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers
DLP Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps
DSP dsp.ti.com Energy and Lighting www.ti.com/energy
Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial
Interface interface.ti.com Medical www.ti.com/medical
Logic logic.ti.com Security www.ti.com/security
Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense
Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video
RFID www.ti-rfid.com
OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com
Wireless Connectivity www.ti.com/wirelessconnectivity

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright 2012, Texas Instruments Incorporated