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US 20140254054A1

(19) United States


(12) Patent Application Publication (10) Pub. No.: US 2014/0254054 A1
BULLIARD et al. (43) Pub. Date: Sep. 11, 2014

(54) POWER SUPPLY DEVICE FOR PLASMA Publication Classi?cation


PROCESSING
(51) Int. Cl.
(71) ApplicantszAlbert BULLIARD, Marly (CH); H02H 3/38 (2006.01)
Benoit FRAGNIERE, Bulle (CH); Joel (52) US. Cl.
OEHEN, Granges-Paccot (CH) CPC ..................................... .. H02H 3/38 (2013.01)
USPC .......................................................... .. 361/79
(72) Inventors: Albert BULLIARD, Marly (CH);
Benoit FRAGNIERE, Bulle (CH), J0l (57) ABSTRACT
OEHEN, Granges-Paccot (CH)
A power supply device for plasma processing, wherein elec
(21) Appl. NO.I 14/284,894 tric arcs may occur, comprises a power supply circuit for
_ generating a voltage across output terminals, and a ?rst
(22) F11ed3 May 22 2014 switch connected between the power supply circuit and one of
_ _ the output terminals. According to a ?rst aspect the power
Related Us Apphcatlon Data supply device comprises a recovery energy circuit connected
(60) Division of application No. 13/846,430, ?led on Mar. to the eutPut terminals and t0 the Pewer supply ehetht
18, 2013, which is a division of application No. Aeeordlhg to a second asPeet the Power supply deV1ee eom'
12/701,813, ?led on Feb 8, 2010, now pat~ NO 8,542, prises an inductance circuit including an inductor and a sec
471, Division Of application NO 13/846,505, ?led on ond switch connected parallel to the inductor. According to a
Mar. 18, 2013, which is a continuation of application thde asPeet the Pewer supply deViee Comprises a eehtreher
NO_ 12/701,813, ?led on Feb 8, 2010, HOW pat NO_ for causing the power supply circuit and the ?rst switch to be
8,542,471 _ switched on and off. The controller is con?gured to determine
a quenching time interval by means of a self-adaptive process.
(30) Foreign Application Priority Data The quenching time interval de?nes the time interval during
which, in an event of an arc, no voltage is generated across the
Feb. 17, 2009 (EP) ................................ .. 09405031.7 output terminals.

46

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r / 5 = \ B
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Patent Application Publication Sep. 11, 2014 Sheet 1 0f9 US 2014/0254054 A1

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Patent Application Publication Sep. 11, 2014 Sheet 3 0f 9 US 2014/0254054 A1

FIG.7

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U0 71

70

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Patent Application Publication Sep. 11, 2014 Sheet 4 0f9 US 2014/0254054 A1

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Patent Application Publication Sep. 11, 2014 Sheet 5 0f9 US 2014/0254054 A1

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Patent Application Publication Sep. 11, 2014 Sheet 6 0f9 US 2014/0254054 A1

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Patent Application Publication Sep. 11, 2014 Sheet 7 0f9 US 2014/0254054 A1

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Patent Application Publication Sep. 11, 2014 Sheet 8 0f 9 US 2014/0254054 A1

FIG. 12

FIG. 13
Patent Application Publication Sep. 11, 2014 Sheet 9 0f 9 US 2014/0254054 A1

Circuit 10
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ON OFF ON OFF ON OFF ON


Switch 25
US 2014/0254054 A1 Sep. 11,2014

POWER SUPPLY DEVICE FOR PLASMA any cables connecting the output terminals of the power sup
PROCESSING ply with the plasma processing chamber is negligible. Thus,
no measures are provided to recover this energy in the cables.
CROSS REFERENCE TO RELATED [0008] In the patent application US 2008/309402 A1, it is
APPLICATIONS proposed to use a pre-charging/discharging circuit for pre
[0001] The present application is a divisional under 37 charging a capacitor under normal operating conditions.
C.F.R. 1.53(b) of prior US. patent application Ser. No. When an arc is detected, an amount of the residual energy
13/846,430, ?led Mar. 18, 2013, by Albert Bulliard et al., which is stored in the cables leading to the plasma processing
entitled POWER SUPPLY DEVICE FOR PLASMA PRO chamber is transferred into the capacitor and ?nally elimi
CESSING, which in turn is a divisional of US. patent appli nated by means of the pre-charging/discharging circuit before
cation Ser. No. 12/701,813, ?led Feb. 8, 2010, which in turn the power is applied again to the plasma processing chamber.
claims priority of European Patent Application No. Thus, the energy is ?nally lost, which makes the operation
09405031.7, ?led Feb. 17, 2009, the contents of which are inef?cient.
incorporated in full by reference herein. [0009] Apart from the problem of the energy in the cables,
[0002] The present application is a divisional under 37 another problem impeding an ef?cient handling of arcs may
C.F.R. 1.53(b) of prior US. patent application Ser. No. arise when the time of interruption of the power supply is not
13/846,505, ?led Mar. 18, 2013, by Albert Bulliard et al., optimal, e.g. the time is too short to quench an arc.
entitled POWER SUPPLY DEVICE FOR PLASMA PRO [0010] In the US. Pat. No. 6,621,674 B1, it is proposed to
CESSING, which in turn is a continuation of US. patent adjust the time interval during which the voltage is applied to
application Ser. No. 12/701,813, ?led Feb. 8, 2010, which in the electrodes in an adaptive manner, whereas the time inter
turn claims priority of European Patent Application No. val during which the voltage is disconnected is kept constant.
09405031.7, ?led Feb. 17, 2009, the contents of which are
incorporated in full by reference herein. SUMMARY OF THE INVENTION
[0011] One object of the present invention is to provide a
FIELD OF THE INVENTION power supply device for plasma processing which allows the
[0003] The invention concerns a power supply device for handling of arc events in a more ef?cient way.
plasma processing. [0012] According to a ?rst aspect of the invention this
object is achieved with a power supply device comprising a
BACKGROUND OF THE INVENTION recovery energy circuit for feeding at least partially the
energy back which is stored in the conductors when the power
[0004] There are variety of processes in which a plasma is supply to the plasma processing chamber is interrupted. The
generated to deposit and/ or to remove material. Examples are power supply circuit is con?gured to reuse the energy fed
the process of sputtering, where material is removed from a back at least partially for the power supplied to the plasma
target and deposited on a substrate in order to produce e.g. a processing chamber.
thin ?lm, or the process of etching, where atoms are removed [0013] According to a second aspect of the invention there
in order to create e.g. a very clean surface. is provided a power supply device comprising a ?rst switch
[0005] To produce the plasma, a high voltage is generated and an inductance circuit that comprises an inductor and a
between electrodes by means of a suitable power supply second switch. The ?rst switch is arranged outside of the
device. However, the processing conditions may be such that inductance circuit and the second switch is connected parallel
there is a sudden electrical discharge for instance between the to the inductor.
electrodes which causes the occurrence of one or more arcs. [0014] According to a third aspect of the invention there is
Normally, such arc events are to be prevented since they may provided a power supply device comprising a controllerbeing
lead e.g. to damages in the target or to a poor quality of the con?gured to determine a quenching time interval by means
surface to be processed. of a self-adaptive process. The quenching time interval
[0006] It is widely known to use a switch for interrupting de?nes the time interval during which, in an event of an arc,
the power supply to the electrodes when an arc event occurs no voltage is generated across the output terminals of the
(see e.g. US. Pat. No. 5,192,894 or US. Pat. No. 6,621,674 power supply device.
B1). However, interruption of the power supply gives rise to [0015] Each of the three aspects has the advantage that arcs
the problem that the energy which is stored e.g. in the cables which occur in the plasma processing chamber can be
at the time of interruption is supplied to the plasma, which handled in a more ef?cient way.
may impede a quick quenching of the arc. Eventually, the
duration until the plasma processing is in an arc-free condi BRIEF DESCRIPTION OF THE DRAWINGS
tion and operates normally may be prolonged.
[0007] The patent application US 2004/124077A1 refers to [0016] The subject invention will now be described in terms
a power supply which is suitable in the ?eld of so-called of its preferred embodiments. These embodiments are set
HiPIMS (High Power Impulse Magnetron Sputtering). The forth to aid the understanding of the invention, but are not to
power supply, which produces very short pulses of extremely be construed as limiting.
high power, is provided with a capacitor that is repetitively [0017] FIG. 1 shows an embodiment of a plasma process
charged and then discharged through an inductor. When an ing installation including a power supply device according to
arc is detected, the capacitor is ?rst disconnected from the the invention,
inductor by actuating a ?rst switch and then connected to the [0018] FIGS. 2 to 5 show various embodiments of the
inductor again by actuating two other switches such that the inductance circuit of the power supply device of FIG. 1,
energy contained in the inductor is recycled to the capacitor. [0019] FIG. 6 shows an alternative embodiment of the
Compared to this recycled energy, the energy contained in energy recovery circuit of the power supply device of FIG. 1,
US 2014/0254054 A1 Sep. 11,2014

[0020] FIG. 7 shows the temporal development of U, I and [0033] FIG. 2 shows an example of a switch 22 being com
I22, where U is the voltage between the electrodes, I the posed of a power MOSFET 22' having a serial diode 23,
current passing through the electrodes, and I22 the current which serves as a freewheeling diode.
passing through the branch parallel to the inductor of the [0034] In case that the switch 22 is an IGBT 22" as shown
power supply device of FIG. 1, in FIGS. 3 to 5, there is preferably provided an overvoltage
[0021] FIG. 8 shows schematically the state of the installa protection in form of a component which is connected paral
tion of FIG. 1 in a ?rst time interval tO-t2, lel to the switch 22. This component may be e.g. a voltage
[0022] FIG. 9 shows schematically the state of the installa suppressor, such as a Zener diode 24 as shown in FIG. 3 or a
tion of FIG. 1 in a second time interval t2-t4, TVSS (Transient Voltage Surge Suppressor) 24' as shown in
[0023] FIG. 10 shows schematically the state of the instal FIG. 4, a power resistor 24" as shown in FIG. 5, or any other
lation of FIG. 1 in a third time interval t4-t5, suitable means for protecting the switch 22 against an over
[0024] FIG. 11 shows schematically the state of the instal voltage.
lation of FIG. 1 in a fourth time interval t7-t9, [0035] In case that the switch 22 is an avalanche rated
[0025] FIG. 12 shows a ?rst example of the temporal devel power MOSFET, it has an inherent overvoltage protection.
opment of |U| (absolute value of the voltage between the [0036] An overvoltage may e.g. occur in the case that the
electrodes) and of I (current passing through the electrodes) plasma does not re-ignite after the switch 25 has been closed
for the case that the plasma recovers after one arc event only, again and the switch 22 is opening after an arc event, so that
[0026] FIG. 13 shows a second example of the temporal the voltage across the inductor 21 is increased, or in the case
development of |U| and of I, and that4due to a malfunctionithe switch 25 is opening when
[0027] FIG. 14 shows a third example of the temporal the switch 22 is opened.
development of |U| and of I as well as the corresponding [0037] In the embodiment shown in FIG. 1, the components
switching states of the power supply circuit and the serial 21, 22 form an inductance circuit 20 which is arranged
switch of the power supply device of FIG. 1. between the terminals 16 and 1 and is thus integrated in the
negative branch of the circuit. Alternatively, the inductance
DETAILED DESCRIPTION OF THE PREFERRED circuit 20 can be integrated in the positive branch by arrang
EMBODIMENTS ing it between the terminals 17 and 2 or it is conceivable to
[0028] FIG. 1 shows a plasma processing installation provide each branch with an inductance circuit 20.
including a power supply device having output terminals 1 [0038] The power supply device shown in FIG. 1 further
and 2, which are connected to a plasma processing chamber 7 comprises a plasma ?oating potential neutraliZing circuit 30
by means of a pair of wires 3, 4 forming e.g. a cable. The (in the following denoted by PFPN circuit) connected to the
output terminals 1, 2 are normally located outside of the negative terminal 1 and the positive terminal 2 and an energy
housing of the power supply. The processing chamber 7 is recovery circuit 40 arranged between the output terminals 1,
designed to produce a plasma therein for accomplishing the 2 and the power supply circuit 10.
desired process such as deposition or etching of a material. [0039] The PFPN circuit 30 comprises a diode 31 and a
Electrodes 5 and 6 are located at the end of the wires 3, 4. The switch 32. The switch 32 is e.g. a transistor such as an IGBT
negative electrode 5 (cathode) is connected to a target 8 and is controlled by the controller 60.
located inside the processing chamber 7. The positive elec
[0040] The energy recovery circuit 40 comprises a ?rst line
trode 6 (anode) is connected e.g. to the housing of the
processing chamber 7 or to an internal electrode. During the 41 which connects the negative output terminal 1 via a diode
45 to the primary winding 46a of a transformer 46, a second
processing operation a voltage U is developed across the
electrodes 5 and 6.As the case may be, there is also a substrate
line 42 which connects the positive output terminal 2 to the
primary winding 46a of the transformer 46, a third line 43
(not shown) located inside the processing chamber 7.
which connects the secondary winding 46b of the transformer
[0029] The power supply device comprises a power supply 46 via a diode 47 to a ?rst input terminal 18 of the power
circuit 10 to produce a DC voltage across the terminals 16 and
supply circuit 10, and a fourth line 44 which connects the
17. In the embodiment shown in FIG. 1 the power supply
secondary winding 46b of the transformer 46 to a second
circuit 10 comprises an AC input 11, which is e.g. connected input terminal 19 of the power supply circuit 10.
to the power supply network, a ?rst recti?er 12, a switching
circuit 13, a transformer 14 and a second recti?er 15. The [0041] The power supply circuit 10 comprises a capacitor
switching circuit 13 includes e.g. a H-bridge with switches 9, which is connected to the ?rst input terminal 18 and the
which are controlled by a controller 60. second input terminal 19. Thus, the power supply circuit 10 is
[0030] The ?rst terminal 16 of the power supply circuit 10 suitable to reuse the energy which is fed back via the energy
is connected via an inductor 21 and a serial switch 25 to the recovery circuit 40 at least partially for the power supplied to
negative output terminal 1. The switch 25 is e.g. a transistor the plasma processing chamber 7.
such as an IGBT and is controlled by the controller 60. [0042] In an alternative embodiment the energy recovery
[0031] The second terminal 17 is connected to the positive circuit 40' is designed as shown in FIG. 6 by providing a
output terminal 2 and via a capacitor 27 to the ?rst terminal DC-DC converter 48 whose input is connected to the lines 41,
16. The inductor 21 limits the temporal variation of the cur 42 and whose output is connected to the lines 43, 44, and a
rent, dI/dt, during an arc event (see the moderate slope of capacitor 49 which is connected to the input of the DC-DC
curve 71 in FIG. 7 in the time interval t1 -t2). The capacitor 27 converter 48.
serves for storing energy. [0043] The power supply device shown in FIG. 1 further
[0032] A switch 22 is arranged parallel to the inductor 21. comprises an arc detection circuit 61 for detecting the occur
The switch 22 is e.g. a transistor, such as an IGBT or a power rence of an arc condition and for generating an arc detection
MOSFET and is controlled by the controller 60. signal which is processed by the controller 60. The arc detec
US 2014/0254054 A1 Sep. 11,2014

tion circuit 61 measures e.g. the current through the negative the time t2 is approximately given by Lc-IZ/ 2, where LC is the
or positive branch and the voltage across the two output inductance of the wires 3, 4. The current originating from the
terminals 1, 2. energy in the wires 3, 4 begins to ?ow via the energy recovery
[0044] In the following the operation of the power device is circuit 40 to the power supply circuit 10, where it is stored in
explained in more detail. In the event that an arc occurs, the the capacitor 9. This is schematically shown in FIG. 9, where
controller 60 controls the switches 22, 25, and 32 to activate the direction of this current is indicated by the arrows 81. At
the circuits 20, 30, and 40 such that the arc is suppressed the same time the current stored in the inductor 21 ?ows
and/ or quenched and the normal operation mode is recovered through the switch 22 as indicated by arrows 82 in FIG. 9.
in an e?icient way. [0051] Referring back to FIG. 7, it can be seen that at time
[0045] In the following, successive instances of time t are t2 the voltage U changes its polarity and reaches a certain level
referred to as t0, t1, t2, etc. The following table summarizes the ULC due to the energy in the wires 3, 4. The level ULC corre
successive states of the switches 22, 25, and 32, where OFF sponds to the voltage between the lines 41 and 42 and de?nes
means that the switch is open and ON means that the switch the decay time'c of the current I, which is given by "EILC'I/ULC.
is closed. For some of time intervals the switches 22 and 32 [0052] As can be seen from FIG. 7, the voltage U remains
may be either ON or OFF (denoted in the table by or). In substantially at the level ULC in the time interval t2 -t4, whereas
case oftransistors, a switch 22, 25, or 32 is ON, when it is the current I tends to zero. t3 indicates the instant of time,
in the conducting state, and OFF, when it is in the non when the switch 32 is closed. t4 indicates the instant of time,
conducting state. when the recovery of the energy from the wires 3 ,4 is ?nished.
It is conceivable to prede?ne t3 such that the switch 32 is
closed before or after t4.
switch 22 of serial switch 32 of
time interval circuit 20 switch 25 circuit 30 [0053] In FIG. 7 the dashed line 71' in the time interval t4-t5
indicates the situation, where there is still plasma surrounding
tO-tl ON or OFF ON OFF the target 8. By closing the switch 32 at time t3 the PFPN
tl-tZ ON or OFF ON OFF
t2-t3 ON OFF OFF
circuit 30 becomes active to shorten the time in which the arc
t3 t4 ON OFF OFF or ON is burning. Any electrons near the target 8 are caught, causing
t4-t5 ON OFF ON a current ?owing through the PFPN circuit 30 as indicated by
t5-t6 ON OFF OFF arrows 83 in FIG. 10. Thereby, the plasma ?oating potential
t6-t7 ON ON OFF
m8 OFF ON OFF
(potential to which the target 8 is charged due to the plasma
t8-t9 OFF ON OFF alone) decreases and the arc cannot be self-sustained any
tgtlo ON or OFF ON OFF more. The diodes 31 and 45 act as selective switches: Since
the currents 81 and 83 are in opposite directions, the current
83 will ?ow through the closed switch 32, as soon as the
[0046] By actuating the switches 22, 25, 32, the voltage U energy in the wires 3, 4 causing the current 81 is fed back to
between the target 8 and the positive electrode 6 and the
current I passing through the electrodes 5 and 6 change in the power supply circuit 10.
time. [0054] At time t5 the switch 32 is opened. t5 is chosen such
[0047] FIG. 7 shows an example of the temporal develop that the arc is unlikely to reoccur.
ment of the voltage U (solid curve 70) and the temporal [0055] At time t6, which may be shortly after t5, the switch
development of the current I (solid curve 71), when an arc 25 is closed which has the effect that the power of the power
event occurs. The dotted line 72 indicates the temporal devel supply circuit 10 is supplied again to the electrodes 5 and 6.At
opment of the current I22 ?owing through the parallel branch the same time, the current 82 circulating in the switch 22 will
22 of the inductance circuit 20. pass progressively through the plasma. The voltage U across
[0048] At time t0 the plasma processing is in the normal the electrodes 5 and 6 goes back to a negative value, whereas
operation mode, where material in the processing chamber 7 the current I increases again (see time interval t6-t7 of curves
is deposited or etched according to the setup of the plasma 70 and 71 in FIG. 7).
processing installation. The voltage U has a value which is in [0056] At time t7, the switch 22 is opened, such that the
the present example negative. The switch 22 is open or closed, remaining current 82 ?owing through the switch 22 is forced
the switch 32 is open, and the switch 25 is closed. Thus, there to ?ow into the plasma, which accelerates the process of
is a current ?owing from the terminal 17 through the wire 4 recovering the plasma. The voltage U changes further by an
and the plasma in the processing chamber 7 back to the amount of U22, which is the voltage across the switch 22 at
terminal 16 via the wire 3. This is schematically shown in time t7, whereas the current I increases further. If the switch
FIG. 8, where the direction of this current is indicated by the 22 is a transistor which is apt to operated in the avalanche
arrows 80. mode, it is possible to dissipate the energy of this residual
[0049] At time tl an electric arc occurs in the processing current 82, such that not all of this energy has to be absorbed
chamber 7, which has the effect that the voltage U tends to by the plasma. (See FIG. 11, in which the switch 22 is indi
zero, whereas the current I increases (see the curves 70 and 71 cated by the inherent avalanche diode of the MOSFET.) The
between the two instants of time t1 and t2 in FIG. 7). The provision of switch 22 has the advantage that a runaway
inductor 21 limits the temporal variation of I, so that the slope current can be prevented, i.e. a current which is accumulated
dI/dt is moderate. The change of voltage, U0, may be e.g. in during successive actuations of the switch 25 and which may
the range of several tens V to several hundreds V. have the effect that the arcs get more and more energy.
[0050] At time t2 the arc detection circuit 61 detects the arc [0057] The switch 22 is actuated such that it is closed when
occurrence in the processing chamber 7 and produces an arc the switch 25 is open, and open during a time interval which
detection signal causing the controller 60 to close the switch is long enough such that the current 82 ?owing through the
22 and to open the switch 25. The energy in the wires 3, 4 at freewheeling diode 23 of the switch 22 has vanished.
US 2014/0254054 A1 Sep. 11,2014

[0058] At time t8, the arc detection circuit 61 checks i.e. after one cycle of actuating the switches 22, 25, 32, the
whether the conditions for an arc are still met. (This is not the voltage |U| is greater than U1 and the current I is less than I1.
case in the example shown in FIG. 7.). The arc conditions are not met anymore. Thus, the plasma
[0059] At time t9, the current ?owing through the inductor processing is in the normal operation mode again.
21 corresponds to the current I passing through the plasma [0075] FIG. 13 shows a second example of the temporal
and the switch 22 may be closed again. development of |U| (solid curve) and I (dash-dotted curve). In
[0060] At time t9, the plasma processing is in the normal this example the delay D3 is set by means of a self-adaptive
operation mode as it was at time to. process. At time t8, i.e. after one cycle of actuating the
[0061] In the following an example of detecting and switches 22, 25, 32, the voltage |U| is still less than U1 and the
quenching an arc and its timing are discussed. The arc detec current I is greater than I2. The arc conditions are still met.
tion circuit 61 is designed such that it generates an arc detec The delay D3 is increased. At time tn, i.e. after the second
tion signal when at least one of the following conditions is cycle of actuating the switches 22, 25, 32, the arc conditions
met (in the following denoted by arc conditions): are not met anymore and the plasma processing changes to the
[0062] 1. The current I in the plasma exceeds a certain normal operation mode.
value I1, [0076] FIG. 14 shows a third example of the temporal
[0063] 2. the absolute value of the voltage between the development of |U| (solid curve) and I (dash-dotted curve). In
electrodes 5 and 6 (denoted by |U|) drops by a certain this example the arc conditions are still met at time tn, i.e.
amount U0 while at the same time the current I in the after two cycles of actuating the switches 22, 25, 32. In this
plasma is above a certain minimum value I2, example the time interval D1 has expired, which means that
[0064] 3. the absolute value ofthe voltage |U| falls below there is no other try to quench the arc. The power supply
a threshold U1 while at the same time the current I is circuit 10 is switched off by switching off the bridge circuit
above a certain minimum value I3. 13, such that no power is supplied to the terminals 16, 17 for
[0065] In the present embodiment the minimum values I2 the time delay D2. At time t12 another cycle of actuating the
and I3 are set to be equal. switches 22, 25, 32 and the circuit 10 is started to re-ignite the
[0066] The controller 60 is adapted to receive various plasma. The successive switching off and on of the power
parameters for operating the power supply device which may supply circuit 10 and the switch 25 is indicated in the lower
be set by the user. Optionally, the controller 60 may be diagram in FIG. 14.
designed such that the operating parameters are variable in [0077] The power supply device according to the invention
time by using a self-adaptive process to set one or more of the is suitable for any plasma processing operation, such as sput
operating parameters during operation. The operating param tering, PECVD (Plasma Enhanced Chemical Vapour Depo
eters comprises e.g. the voltage change U0 or the thresholds sition), etching, etc. The plasma processing operation may
U1, I1 and I2 for arc detection, which are used by the arc include usual materials as well as materials which are dif?cult
detection circuit 61, and the various time intervals (delays) for to be processed such as Zinc oxide (ZnO) or aluminum-doped
controlling the switches 22, 25, 32 and the bridge circuit 13. Zinc oxide (AZO).
Examples of such delay parameters are: [0078] The power supply device according to the invention
[0067] D1: time interval during which the power supply has the advantage that when the power to the processing
device tries to quench an arc before the bridge circuit 13 chamber is interrupted, less energy is involved in the arc
is switched off. Thus, D1 de?nes the number of times the occurrence. Thereby, the arc can be quenched quickly and the
switch 25 is, in an event of an arc, actuated before the risk of damaging the target (and/or substrate when present) is
power supply circuit 10 is switched off. reduced. In addition, it has been found that possible consecu
[0068] D2: time interval during which the bridge circuit tive arcs are suppressed in an ef?cient way, such that the
13 is switched off. number of arc events is reduced.
[0069] D3: time interval when the switch 25 is open. D3 [0079] Although the present invention has been described
corresponds to the interval t2-t6 in the example of FIG. 7. in relation to particular embodiments thereof, many other
[0070] D4: time interval during which the arc conditions variations and modi?cations and other uses will become
are to be met before the switch 25 is opened. D4 corre apparent to those skilled in the art. It is preferred, therefore,
sponds to the interval tl-t2 in the example of FIG. 7. that the present invention be limited not by the speci?c dis
[0071] D5: time interval between the closing of switch closure herein, but only by the appended claims.
25 and the checking step whether the plasma condition is What is claimed is:
met, i.e. whether the arc event is over. D5 corresponds to
the interval t6-t8 in the example of FIG. 7. 1. A power supply device for plasma processing, wherein
electric arcs may occur, comprising
[0072] As already mentioned above, the parameters may be
variably set by a self-adaptive process. For example, the a power supply circuit for generating a voltage across out
threshold U1 can be given by the average plasma voltage |U| put terminals,
plus a prede?ned valued. The delays D2 and D3 de?ne the said output terminals being for connection to a plasma
quenching time interval during which, in an event of an arc, processing chamber by means of conductors,
no voltage is generated across the output terminals 1, 2. an interrupting switch connected between said power sup
[0073] The delay D3 may be set by means of the self ply circuit and one of said output terminals for interrupt
adaptive process such that D3 is increased if the plasma does ing the power supply to said plasma processing chamber
not recover after one cycle of actuating the switches 22, 25, 32 in case of the occurrence of an arc, and
to quench the arc. a controller for causing said power supply circuit and said
[0074] FIG. 12 shows a ?rst example of the temporal devel interrupting switch to be switched on and off, said con
opment of |U| (solid curve) and I (dash-dotted curve). The troller being con?gured to determine a quenching time
example is similar to the example shown in FIG. 7. At time t8, interval by means of a self-adaptive process, the quench
US 2014/0254054 A1 Sep. 11,2014

ing time interval de?ning the time interval during which, that, in the event of an arc, said parallel switch is in the closed
in an event of an arc, no voltage is generated across said state when said interrupting switch is in the open state and is
output terminals. opened after said interrupting switch is closed again.
2. The power supply device according to claim 1, wherein 6. The power supply device to claim 1, further comprising
said controller is con?gured to cause said power supply cir an arc detection circuit for detecting arc events in said plasma
cuit to be switched off in the event that the arc persists after processing chamber, said arc detection circuit being con?g
actuating said interrupting switch a number of times. ured to determine at least one of the following criteria de?n
3. The power supply device according to claim 1, wherein ing an arc event:
said controller is con?gured to determine one or more of the
following delay parameters by means of said self-adaptive the current I through electrodes, between which the plasma
process:
is generated, exceeds a given value 11,
a ?rst delay parameter de?ning the number of times N said the absolute value of the voltage, |U|, across said electrodes
interrupting switch is, in an event of an arc, actuated drops by a given amount U0, while said current I is above
before said power supply circuit is switched off; a given minimum value 12,
a second delay parameter de?ning the time during which |U| falls below a threshold U1 while said current I is above
said power supply circuit remains switched off, after a given minimum value 13.
said number N de?ned by said ?rst delay parameter has
7. The power supply device according to claim 6, wherein
been reached; said controller is con?gured to determine at least one of the
a third delay parameter de?ning the time during which said
interrupting switch remains, in an event of an arc, in the
parameters U0, U1, 11, l2, 13 by means of said self-adaptive
process.
open state;
a fourth delay parameter de?ning the time interval between 8. The power supply device according to claim 1, further
the detection of an arc event and the opening of said comprising a ?oating potential neutralizing circuit connected
interrupting switch; to said output terminals for reducing the ?oating potential
a ?fth delay parameter de?ning the time interval between which is produced on at least one of a target and a substrate
the step of closing said interrupting switch after the time located in said plasma processing chamber after said inter
interval de?ned by said fourth delay parameter has rupting switch is actuated to interrupt the power supply to said
lapsed and the step of checking of whether the arc is still plasma processing chamber.
burning. 9. The power supply device according to claim 8, wherein
4. The power supply device according to claim 1, further said ?oating potential neutraliZing circuit comprises another
comprising an inductance circuit which is arranged between switch with a serial diode connected to said output terminals.
said power supply circuit and one of said output terminals and
which comprises an inductor and a parallel switch connected 10. The power supply device according to claim 1, wherein
parallel to said inductor. saidpower supply circuit is designed to generate a continuous
5. The power supply device according claim 4, wherein DC voltage or a pulsed DC voltage across said output termi
said controller is con?gured to control said interrupting nals.
switch and said parallel switch of said inductance circuit such

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