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CASE 1483 - 01
QFN 3x3
MMG2401NR2
RF Device Data
2 Freescale Semiconductor
Table 6. Functional Pin Description
Name Pin Description
Number
VCC1 NC VB2
VB1 1 Base power supply for first stage amplifier. 12 11 10
RFIN 2, 3 RF input for the power amplifier. This pin is DC - shorted to
GND and AC - coupled to the transistor base of the first VB1 1 9 RFOUT
stage. 2 8
RFIN RFOUT
VBIAS 4 Detector bias voltage supply. RFIN 3 7 VCC2
VREF 5 Detector output voltage reference. Vout - VREF is useful for
tracking detector performance over temperature. 4 5 6
VOUT 6 Detector output voltage. VBIAS VREF VOUT
MMG2401NR2
RF Device Data
Freescale Semiconductor 3
VB1 VCC1 VB2 VCC2
L1
RF RF
INPUT OUTPUT
Z1 Z2
MMG2401NR2
RF Device Data
4 Freescale Semiconductor
C1
C2
C3
C4
C11
C5 C12
VB1 VB2
VCC1
VCC2
VBIAS
VREF
VOUT
L1
C14 C10
C15 C13
C9
C8
C7
C6
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MMG2401NR2
RF Device Data
Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
29 7
TC = 25_C 5
27 −40_C 4
85_C
3
26
2
85_C
25 VCC = 3.3 Vdc TC = 25_C
VB1 = 2.9 Vdc 1
−40_C
f = 2450 MHz
24 0
0 5 10 15 20 25 0 5 10 15 20 25
Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm)
Figure 4. Power Gain versus Output Power Figure 5. Error Vector Magnitude versus
Output Power
25 10
1
15
85_C
TC = 85_C
10
0.1
−40_C
VCC = 3.3 Vdc 25_C VCC = 3.3 Vdc
5
VB1 = 2.9 Vdc VB1 = 2.9 Vdc
f = 2450 MHz f = 2450 MHz
0 0.01
0 5 10 15 20 25 0 5 10 15 20 25
Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm)
Figure 6. Efficiency versus Output Power Figure 7. Detector Output Voltage versus
Output Power
4 250
VCC = 3.3 Vdc
3 VB1 = 2.9 Vdc
f = 2450 MHz 200
I CC , TOTAL CURRENT (mA)
2
TC = 85_C
AM to PM (_)
1 150
25_C
0
100
−1 −40_C
−2 VCC = 3.3 Vdc
50
VB1 = 2.9 Vdc
−3
f = 2450 MHz
−4 0
0 5 10 15 20 25 30 0 5 10 15 20 25
Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm)
Figure 8. AM to PM versus Output Power Figure 9. Total Current versus Output Power
MMG2401NR2
RF Device Data
6 Freescale Semiconductor
TYPICAL CHARACTERISTICS
35 0
25 −10
20 −15
15 −20
VCC = 3.3 Vdc VCC = 3.3 Vdc
VB1 = 2.9 Vdc VB1 = 2.9 Vdc
10 −25
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8
f, FREQUENCY (GHz) f, FREQUENCY (GHz)
Figure 10. Power Gain (S21) versus Figure 11. Input Return Loss (S11) versus
Frequency Frequency
REVERSE TRANSCONDUCTANCE ISOLATION (dB)
−20 0
−40 −10
−50 −15
−60 −20
VCC = 3.3 Vdc VCC = 3.3 Vdc
VB1 = 2.9 Vdc VB1 = 2.9 Vdc
−70 −25
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8
f, FREQUENCY (GHz) f, FREQUENCY (GHz)
Figure 12. Reverse Transconductance Figure 13. Output Return Loss (S22) versus
Isolation (S12) versus Frequency Frequency
MMG2401NR2
RF Device Data
Freescale Semiconductor 7
A 4X D
C b 1
E
E/2
PIN1 ID
N=12
4X D
2
0.45 1
1 2 F (Ny - 1)e
2 B 3 F/2
3 L
0.25 MIN.
0.25 MIN. e
(Nx - 1)e 2
SEATING
PLANE
NOTES:
1. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.20 AND 0.25 MM FROM
TERMINAL TIP.
2. N IS THE NUMBER OF TERMINALS (12).
Nx IS THE NUMBER OF TERMINALS IN X−DIRECTION
AND
Ny IS THE NUMBER OF TERMINALS IN Y−DIRECTION.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
SYMBOLS E F
MIN NOM MAX MIN NOM MAX
EXPOSED PAD 1.15 1.30 1.45 1.15 1.30 1.45
MMG2401NR2
RF Device Data
8 Freescale Semiconductor
PACKAGE DIMENSIONS
3 A
PIN 1 INDEX M
AREA 2X
0.1 C
DETAIL G
B M
2X
0.1 C
1.55
1.25
10 12
EXPOSED DIE
ATTACH PAD DETAIL M
PIN 1 INDEX
9
1
1.55
1.25
3
7
DETAIL N
NOTES:
1. ALL DIMENSIONS ARE IN MILLIMETERS.
6 4
12X 0.75 2. INTERPRET DIMENSIONS AND
TOLERANCES PER ASME Y14.5M, 1994.
0.50 3. THE COMPLETE JEDEC DESIGNATOR FOR
12X 0.30 THIS PACKAGE IS: HF−PQFP−N.
9 0.18 8X 0.5 4. FOR ANVIL SINGULATED QFN PACKAGES,
MAXIMUM DRAFT ANGLED IS 12 _.
0.10 M C A B 5. PACKAGE WARPAGE MAX 0.05 MM.
6. CORNER CHAMFER MAY NOT BE PRESENT.
DIMENSIONS OF OPTIONAL FEATURES ARE
FOR REFERENCE ONLY.
VIEW M - M 7. CORNER LEADS CAN BE USED FOR
THERMAL OR GROUND AND ARE TIED TO
THE DIE ATTACH PAD. THESE LEADS ARE
NOT INCLUDED IN THE LEAD COUNT.
8. COPLANARITY APPLIES TO LEAD, CORNER
LEADS, AND DIE ATTACH PAD.
9. THIS DIMENSION APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.20 MM AND 0.25 MM FROM TERMINAL TIP.
CASE 1483 - 01
ISSUE A
QFN 3x3 Page 1 of 3
MMG2401NR2
RF Device Data
Freescale Semiconductor 9
0.60
(45_) 0.24
(0.25) (0.25)
0.60
0.24
DETAIL N DETAIL N
PREFERRED CORNER CONFIGURATION CORNER CONFIGURATION
6 6
0.1 C
1.0 1.00
0.8 0.75
0.05 C 8
0.05
C SEATING
0.00
DETAIL G PLANE
VIEW ROTATED 90_ CW
CASE 1483 - 01
ISSUE A
QFN 3x3
Page 2 of 3
MMG2401NR2
RF Device Data
10 Freescale Semiconductor
0.217
0.137
DETAIL S
(0.25)
0.217
0.137
(0.1)
(0.25)
DETAIL M DETAIL S
PREFERRED BACKSIDE PIN 1 INDEX BACKSIDE PIN 1 INDEX
(45_ )
4X 0.65
0.30
(0.45)
(0.35)
R0.2
PIN 1 ID
DETAIL M DETAIL M
BACKSIDE PIN 1 INDEX OPTION BACKSIDE PIN 1 INDEX OPTION
CASE 1483 - 01
ISSUE A
QFN 3x3
Page 3 of 3
MMG2401NR2
RF Device Data
Freescale Semiconductor 11
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MMG2401NR2
Document Number: MMG2401 RF Device Data
Rev. 3, 5/2006
12 Freescale Semiconductor