VALLIAMMAI ENGINEERING COLLEGE

SRM Nagar, Kattankulathur 603 203.

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

QUESTION BANK
SUBJECT : EC 6202 Electronic Devices and Circuits
SEM / YEAR: III / II nd year EEE
Prepared by: N. RAJESH, AP (OG)/ECE, A. ANBARASAN, AP(OG)/ECE

EC 6202 ELECTRONIC DEVICES AND CIRCUITS

UNIT-I: PN JUNCTION DEVICES

PN junction diode structure, operation and V-I characteristics, diffusion and transient capacitance -
Rectifiers Half Wave and Full Wave Rectifier, Display devices- LED, Laser diodes- Zener diode
characteristics-Zener Reverse characteristics Zener as regulator

PART A

Q.NO QUESTIONS BT DOMAIN

LEVEL

1. Model diffusion capacitance in PN junction diode and explain? BTL 3 Applying

2. What is a rectifier? Name its types? BTL 1 Remembering

3. How to represent the symbol of the following BTL 1 Remembering

PN diode, Zener diode, LED, UJT
4. Find the diffusion capacitance for a silicon diode with a 15 mA forward BTL 1 Remembering
current, if the charge carrier transit time is 70ns.
5. With suitable expression what is transition capacitance and Diffusion BTL 3 Applying
capacitance?
6. Construct the laser diode and give its applications. BTL 3 Applying

7. Define storage time. BTL 1 Remembering

8. List out the factors on which barrier potential depends? BTL 4 Analyzing

9. Discuss the effect of temperature on reverse saturation current of a diode? BTL6 Creating

10. Outline transformer utilization factor and state its value for HWR and FWR? BTL 2 Understanding

11. Compare and contrast between p-n junction diode and zener diode? BTL 4 Analyzing

12. Explain the terms knee voltage and breakdown voltage? BTL 5 Evaluating

EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.

13. Explain peak inverse voltage BTL 2 Understanding

14. Interpret the term diffusion capacitance or storage capacitance BTL 2 Understanding

15. Illustrate the LED symbol. BTL 2 Understanding

16. A silicon diode has a saturation current of 7.5 A at room temperature to 300 BTL 6 Creating
K. Estimate the saturation current at 400 K
17. Distinguish between Zener Breakdown and Avalanche breakdown BTL 4 Analyzing

18. What is meant by dynamic resistance of diode? BTL 1 Remembering

19. A Ge diode has a saturation current of 10A at 300 K. Determine the BTL 5 Evaluating
saturation current at 400K.
20. Show the VI characteristics of Zener diode BTL 1 Remembering

PART B

1. i) Describe the action of a full wave rectifier using diodes and give waveforms
of input and output voltages (7)
ii) Show the expression for a ripple factor in a full wave rectifier with resistive BTL 1 Remembering
load. (6)

2. Briefly enumerate the following

i) Laser diodes
ii) Zener diode as a voltage regulator (7+6) BTL6 Creating

3. With neat sketch explain the construction, operation and its characteristics of BTL3 Applying
PN junction diode. Also list its advantages, disadvantages and its applications.
(13)

4. i) Outline the working of bridge rectifier. Give the expressions for RMS current, BTL2 Understanding
PIV, Ripple factor and efficiency (7)
ii) Illustrate the construction of LCD (6)
5. i) With necessary diagrams, explain the forward and reverse characteristics of
PN junction diode (6)
ii) Show the circuit diagram of a half wave rectifier for producing a positive BTL 1 Remembering
output voltage. Explain the circuit operation and sketch the waveforms. (7)
i) Make use of a diagram, explain the energy band diagram of an open circuited
6 PN junction and obtain the expression for E0. (8)
BTL2 Understanding
ii) Distinguish between Avalanche and Zener break downs (5)
The diode current is 0.6 mA when the applied voltage is 400 mV and 20 mA
7 when applied voltage is 500 mV. Determine efficiency. Assume kT/q= 25mA
(13) BTL5 Evaluating

(i) Explain the construction and working principle of Light Emitting Diodes. (8)
(ii) The reverse saturation of a silicon PN junction diode is 10A. Calculate the
BTL4 Analyzing
8 diode current for the forward bias voltage of 0.6V at 25 (5)

EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.

 9 i)Explain the effect of temperature of a diode (5) BTL2 Understanding
ii) Derive the expression for transition and diffusion capacitance (8)

10 A germanium diode has a contact potential of .2volt while the concentration of

accepted impurity atoms is 3x10^20/m^3. Calculate for a reverse bias of .1 volt,
the width of the depletion region. If the reverse bias is increased to 10volt,
calculate the new width of the depletion region. Assuming cross sectional area
BTL4 Analyzing
of the junction as 1mm^2 , Calculate the transition capacitance values for both
the cases. Assume r=16 for germanium (13)
11 i)Examine the construction and working of Zener diode with a neat sketch BTL4 Analyzing
ii) Compare HWR with FWR (7+6)
12 i)Draw the expression for drift current density (5)
ii)Estimate the ideal reverse saturation current density in a silicon PN
BTL6 Creating
junction at T=300K, Consider the following parameters in the silicon pn
junction. Nd=Na= 10^16cm^-3, ni= 1.510^10 cm^-3, Dn=25 cm2/s, Tp0=
Tn0=510^-7 s, Dp=10cm2/s, r=11.7 .Comment on the result. (8)

13 i) In an N type semiconductor, the Fermi level lies 0.3 eV below the conduction
band at 27C. If the temperature is increased to 55C, find the new position of
the Fermi level. (7)
ii) A PN junction diode has at a temperature of 125C, a reverse saturation
BTL 1 Remembering
current of 30A. Find the dynamic resistance for 0.2V bias in forward and
reverse direction. (6)

14 Illustrate the circuit diagram and explain the operation of full wave rectifier BTL2 Understanding
using center tap transformer and using bridge rectifier without center tap
transformer. Obtain the expression for peak inverse voltage. (13)
PART C

1. An AC supply of 220V, 50 Hz is applied to a HWR through a transformer of

turn ratio 10:1. Deterrmine (i) Maximum RMS load Voltage (ii) Maximum
RMS load current (iii) Power delivered to the load (iv) AC power input (v) BTL 5 Evaluating
Efficiency and ripple factor (vi) PIV, ripple frequency, ripple voltage and ripple
current. (15)
2. A 230 V,50 Hz voltage is applied to the primary of a 5:1 stepdown center-
tapped transformer used in a FWR having a load of 900. If the diode
resistance and the secondary coil resistance together has a resistance of 100 BTL 5 Evaluating
determine, (i) DC voltage across the load (ii) DC current flowing through the
load (iii) DC power delivered to the load (iv) PIV across each diode (v) Ripple
voltage and its frequency (15)

UNIT II- TRANSISTORS

BJT, JFET, MOSFET- structure, operation, characteristics and Biasing UJT, Thyristor and IGBT -
Structure and characteristics.
PART A

EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.

Q.No Questions BT Domain
Level

1. What is base width modulation? BTL 1 Remembering

2. Name the two types of thyrister? BTL 1 Remembering

3. Solve Ic and IE for a transistor that has dc = 0.99and IB= 150A. Determine the BTL 3 Applying
value of dc for the transistor.
4. Show how an SCR can be triggered on by the application of a pulse to gate BTL 2 Understanding
terminal
5. Inspect why it is necessary to stabilize the operating point of transistor. BTL 4 Analyzing

6. Compare BJT and FET. BTL 2 Understanding

7. Make use of the values of transistor has =150, find the collector and base BTL 3 Applying
current if IE= 10mA
8. Identify some applications of JFET. BTL 3 Applying

9. How does a transistor act as a switch? BTL 1 Remembering

10. Examine thermal runaway in transistors? BTL 4 Analyzing

11. Why FET is more temperature stable compared to BJT? BTL 1 Remembering

12. Formulate the relation between dc and dc? BTL 6 Creating

13. what is meant by biasing a transistor? BTL 1 Remembering

14. Contrast BJT and JFET BTL 2 Understanding

15. Discuss the advantages of FET over BJT BTL 6 Creating

16. Define amplification factor of JFET BTL 1 Remembering

17. Explain the intrinsic standoff ratio of a UJT? BTL 2 Understanding

18. Distinguish the latching current & holding current? BTL 4 Analyzing

19. A BJT has a base current of 200A. Determine the collector current and . BTL 5 Evaluating

20. In a n channel JFET IDSS=20 mA and VP= -6V. Estimate the drain current BTL 5 Evaluating
when VGS= -3V.
PART B

1. With the help of suitable diagram, explain the working of enhancement BTL 3 Applying
MOSFET (13)
2. Describe the construction and working of UJT with its equivalent circuit and BTL1 Remembering
VI characteristics. (13)
3. Elaborate the construction and operation of NPN transistor with neat sketch. BTL 6 Creating
Also comment on the characteristics of NPN transistor (13)

4. With neat sketch, illustrate the construction, operation and characteristics of BTL1 Remembering

EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.

 SCR. (13)
5. i) Enumerate the selection of Q point for transistor bias circuit and discuss the BTL1 Remembering
limitations on the output voltage swing (8)
ii) Show the cross section diagram of an N type enhancement mode MOSFET.
Briefly explain its operation (5)

6. i) Demonstrate the basic construction and equivalent circuit of a UJT. Briefly BTL 2 Understanding
explain the device operation (7)
ii) Show the four layer construction of SCR and two transistor equivalent
circuit . Explain the device operation (6)
7. Explain the following and derive the stability factor for each case. BTL 3 Applying
a. Fixed bias
b. Collector to base bias
c. Voltage divider bias. (4+4+5)
8. i) The reverse leakage current of the transistor when connected in CB
configuration is 0.2 mA and it is 18 A when the same transistor is connected
in CE configuration. Determine dc &dc of the transistor. Assume IB =30mA.
(8)
BTL 5 Evaluating
ii) Distinguish between h-parameter and hybrid model. (5)

9. Outline the construction of N channel JFET and also explain the drain and BTL 2 Understanding
transfer characteristics of the same (13)
10. i) Recall the comparisons between CE, CB and CC configurations. (5) BTL1 Remembering
ii) What are the different compensation techniques used in BJT (8)

11. i) What is early effect describe with relevant expressions and figure (6) BTL1 Remembering
ii) Explain the construction and working of Ebers Moll transistor model (7)

12. i) Explain the structure and operation of Insulated Gate Bipoar BTL4 Analyzing
Transistor. (8)
ii) Distinguish MOSFET and IGBT (5)

13. i) Examine the various current components in a transistor. (8) BTL4 Analyzing
ii) Explain the performance of FET as a voltage regulator. . (8)

14. Take part in discussion of the two transistor model of a thyristor in detail.(13) BTL4 Analyzing

EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.

 PART C

1. Draw d.c load line for the following transistor configuration. Obtain the
Quiescent point (15)

BTL5 Evaluating

2. For the circuit shown below calculate VG, ID, VGS and VDS. (15)

BTL6 Creating

UNIT-III: AMPLIFIERS
BJT small signal model Analysis of CE, CB, CC amplifiers- Gain and frequency response
MOSFET small signal model Analysis of CS and Source follower Gain and frequency response-High
frequency analysis
PART A

Q.No Questions BT Domain

Level

1. Show the hybrid model of BJT in CE configuration BTL 1 Remembering

2. What are amplifiers? Write its uses? BTL 1 Remembering

EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.

3. Model the small signal equivalent circuit of a CS JFET BTL 3 Applying

4. Justify the need of coupling capacitors in amplifier design? BTL5 Evaluating

5. Explain the four h-parameters BTL 4 Analyzing

6. For an amplifier, midband gain =100 and lower cut-off frequency is 1 kHz. BTL 6 Creating
Estimate the gain of an amplifier at frequency of 20Hz.
7. Explain the significance of coupling and bypass capacitor on BW of amplifiers BTL 2 Understanding

8. Explain the term bandwidth and gain bandwidth product. BTL5 Evaluating

9. How can a DC equivalent circuit of an amplifier be obtained? BTL 1 Remembering

10. List out the different analysis available to analyze a transistor?. BTL 1 Remembering

11. Point out why CE configuration is preferred over CB configuration. BTL 4 Analyzing

12. Outline the procedure to draw the a.c. equivalent of a network BTL 2 Understanding

13. Identify the reason for fall in gain at low and high frequencies BTL 3 Applying

14. When transistor acts as a switch, in which regions of output characteristics it is BTL 1 Remembering
operated.
15. Discuss about thermal runaway and how it could be avoided. BTL 6 Creating

16. Develop the expression for pinch off voltage with respect to JFET. BTL 3 Applying

17. When VGS of the FEET changes from -3.1V to 3V the drain voltage changes BTL 4 Analyzing
from 1 mA to 1.3mA Calculate the value of transconductance.
18. Define desensitivity. BTL 1 Remembering

19. Show the frequency response curve of an amplifier and what is 3 dB frequency. BTL 2 Understanding

20. Compare the performance of CE,CB,CC amplifier configurations BTL 2 Understanding

PART B

1. Illustrate the h-parameter model of a BJT-CE amplifier and derive the equations BTL 2 Understanding
for voltage gain, current gain, input impedance and output impedance (13)
2. Describe about small signal MOSFET amplifiers (NMOS) and obtain the BTL1 Remembering
expression for its trans conductance. (13)
3. Develop the h parameter equivalent circuit for a typical common emitter BTL3 Applying
amplifier and derive the expression for Ai, Ri, Av and Ro. (13)

4. i)Derive the expression for the voltage gain of CS amplifier (5)

ii)For CS amplifier, the operating point is defined by VGSQ=-2.5V,Vp= -6V and
IdQ=2.5mA with IDSS=8mA. Also RG=1M, RS=1 K, RD=2.2K and BTL3 Applying
VDD=15V.Calculate gm, rd, Zi, Zo and Av (8)

5. i)Discuss the factors involved in Ic, Rc and Re for a single stage common
emitter BJT amplifier circuit, using voltage divider bias (5)
BTL6 Creating
ii) A CC amplifier shown in below figure has VCC=15 V, RB=75k and
EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.
 RE=910 The of the silicon transistor is 100 and the load resistor is
600. Estimate rin and Av (8)

6. The MOSFET shown in below figure has the following parameters.

VT=2V, =0.510 -3, rD=75k. It is biased at ID=1.93 mA. Determine
the impedance and voltage gain (8)

BTL 5 Evaluating

With neat circuit diagram, evaluate the ac analysis for common source
using equivalent circuit NMOSFET amplifier (5)

Take part in the discussion on CB amplifier and derive the expression for h BTL4 Analyzing
7 parameters of the same. Also derive the expression for gain, input impedance
and output impedance of CB amplifier. (13)
7. Explain
8 about CS amplifier and derive the expression for gain, input impedance BTL 2 Understanding
and output impedance and also draw its small signal equivalent circuit (13)
8. The hybrid parameters of a transistor used as an amplifier in the CE BTL1 Remembering
configuration are hie = 800, hfe = 46, hoe = 80 x 10-6 and hre = 5.4x 10-4. If RL
= 5K and Rs =500. Find Ai, Ri , Av, Pi. (13)
9. Inspect the high frequency response of FET and derive the expression for lower BTL4 Analyzing
cut off frequency and upper cut off frequency (13)
10. Demonstrate the low frequency analysis of BJT and also determine the effect of BTL 2 Understanding
Cs, Cc & Cc on the low frequency response of BJT (13)
11. Explain about CC amplifier and derive the expression for h parameters of the BTL4 Analyzing
same. Also derive the expression for gain, input impedance and output
EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.
 impedance of CC amplifier. (13)
12. What are the factors affect the bias stability of a transistor? (8) BTL1 Remembering
Define the stability factors with respect to the changes in ICO,VBE and . Why
is the stability with respect to VCE not considered? (5)
13. i)Show the low frequency h-equivalent model of a transistor amplifier operating BTL1 Remembering
in CE mode
ii) Why is this circuit not valid for high frequencies
iii) Define the trans conductance of BJT in the CE mode. How it is related to h
parameters. (13)
PART C

1. Acommon collector circuit has the following components; R1=21K. R2=

27K, RE=5.6 K, RL=47K, RS=600. The transistors parameters are
hie=1K, hfe=85 and hoe=2A/V, Calculate Ai, Ri, Av, Ro, Avs and Ai=IO/IS (15)

BTL5 Evaluating

2. A common base amplifier as shown in figure has the following components;

RS=600, RC=5.6K, RE=5.6K, RL=K. The transistor parameters are hie=1K,
hfe=85 and hoe=2A/V, Calculate Ai, Ri, Av, Ro, Avs and Ai. (15)

BTL6 Creating

EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.

 UNIT-IV: MULTISTAGE AMPLIFIERS AND DIFFERENTIAL AMPLIFIER

BIMOS cascade amplifier, Differential amplifier Common mode and Difference mode analysis FET
input stages Single tuned amplifiers Gain and frequency response Neutralization methods, power
amplifiers Types (Qualitative analysis).

PART A

Q.No Questions BT Domain

Level

1. What are cascaded amplifiers? BTL 1 Remembering

2. Model the ideal tuned circuits and write the expression for its resonant BTL 3 Applying
frequency.
3. Explain how the differential amplifier can be used as an emitter coupled phase BTL 4 Analyzing
inverter
4. Elaborate the need for neutralization? BTL 6 Creating

5. Identify the need for cascading the amplifiers BTL 3 Applying

6. What is CMRR? Examine various methods of improving CMRR. BTL 4 Analyzing

7. Recall the applications of differential amplifier? BTL 1 Remembering

8. Why neutralization is important? And give its types. BTL 1 Remembering

9. Construct a Differential amplifier and what is the ideal value of CMRR? BTL 3 Applying

10. Distinguish common mode and difference mode? BTL 4 Analyzing

11. Summarize the Advantages and performance of class-c amplifier BTL 2 Understanding

12. Explainthe term cross over distortion? BTL 4 Analyzing

13. Illustrate the ideal tuned circuit and write the expression for its resonant BTL 2 Understanding
frequency?
14. State Millers theorem BTL1 Remembering

15. Explain the bootstrapping technique? BTL5 Evaluating

16. Compare the performance of various power amplifier types. BTL 2 Understanding

17. Discuss need of Complementary symmetry amplifiers? BTL 6 Creating

18. Tell the advantages of Push pull amplifier BTL1 Remembering

19. Enumerate the advantages of single tuned amplifiers. BTL1 Remembering

20. Outline the need for constant current source for difference amplifier. BTL 2 Understanding

PART B

EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.

1. Illustrate the circuit of emitter coupled BJT differential amplifier, and derive BTL 2 Understanding
expressions for differential gain, common mode gain and CMRR. (13)
2 What is Neutralization? Explain any one method in brief? (13) BTL 1 Remembering

3. With neat sketch explain two stage cascaded amplifier and derive its overall Av, BTL 3 Applying
AI,RI and Ro (13)
4. Show the differential amplifier and its ac equivalent circuit. Derive for Ad and BTL 1 Remembering
Ac. (13)

5. With neat sketch, explain the BJT differential amplifier with active load and BTL 1 Remembering
derive Ad, Ac and CMRR. How CMRR can be improved (13)
6. Explain the different types of neutralization technique used in tuning amplifier BTL 2 Understanding
(13)
7. Develop the equation for differential mode gain and common mode gain of a BTL 3 Applying
differential amplifier. (7+6)
8. The differential amplifier has the following values RC = 50 K, Re = 100K and BTL 5 Evaluating
Rs = 10K. The transistor parameters are r = 50K= hie, hfe = Vo = 2 x10^3, ro=
400K.Determine Ad, Ac and CMRR in db. (13)
9. i)Discuss the complementary symmetry class B amplifier and obtain its BTL 6 Creating
efficiency (7)
ii) Elaborate the operation of class AB amplifier to avoid cross over
distortion (6)
10. The dual input balanced output differential amplifier having Rs=100, RC BTL 1 Remembering
=4.7K, RE =6.8K,hfe=100,VCC=+15V, VEE=-15V. Find operating point
values, differential &common mode gain, CMRR and outputif Vs1=70mV(p-
p)at 1 kHz and Vs2=40mV(p-p) (13)

11. A Class C amplifier with VCC=25V has RL=680,Cp=4300pF,Lp=20H and BTL 4 Analyzing
Rw=0.06.The transistor has VCE(sat)=0.6V.Calculate the appropriate signal
frequency, the output power and circuit efficiency. (13)

12. i) Draw a circuit diagram to show how the current in the output transistors of a BTL 4 Analyzing
power amplifier can be limited to a desired maximum level. Examine the circuit
operation. (8)
ii) Compare MOSFET to power BJT (5)
13. Classify the power amplifiers and calculate the efficiency each types? (13) BTL 2 Understanding

14. Explain about Class A transformer coupled amplifier and derive the expression BTL 4 Analyzing
for efficiency of the same. (13)

EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.

 PART C

1. Figure shows dual input, balanced output differential amplifier configuration.

Assuming silicon transistors with hie=2.5K. (15)

BTL 6 Creating

2. For the circuit shown below , calculate (i) Output power if the output voltage is
50 VPP (ii) Maximum ac output power (iii) DC input power if current drain is
0.5mA (iv) Efficiency if the current drain is 0.4mA and the output voltage is
30VPP. (v) Bandwidth of amplifier if Q=125 (vi) Worst case transistor power
dissipation. (15)

BTL 5 Evaluating

UNIT-V: FEEDBACK AMPLIFIERS AND OSCILLATORS

Advantages of negative feedback voltage / current, series, Shunt feedback positive feedback Condition
for oscillations, phase shift Wien bridge, Hartley, Colpitts and Crystal oscillators.

PART A

EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.

Q.No Questions BT Competence
Level

1. Tell the disadvantages of negative feedback in amplifiers and how it can be BTL 1 Remembering
overcome?
2. Show the expression for the frequency of oscillations of a wein bridge BTL 2 Understanding
oscillator?
3. Summarize the advantages of negative feedback circuits. BTL 2 Understanding

4. What is the advantage of a Colpitts oscillator compared to a phase shift BTL 1 Remembering
oscillator?
5. Which is the most commonly used feedback arrangement in cascaded amplifier BTL 1 Remembering
and why?
6. Recall the Barkhausan criterion for an oscillator. BTL 1 Remembering

7. Identify the difference between an oscillator and amplifier? BTL 3 Applying

8. Name two high frequency oscillators. BTL 1 Remembering

9. Outline the advantages of crystal oscillator? BTL 2 Understanding

10. Discuss about Nyquests stability criteria for feedback amplifiers BTL 6 Creating

11. Develop the oscillator model uses both positive and negative feedback? Why? BTL 3 Applying

12. Determine the operating frequency of transistor Hartley oscillator if L1=50H, BTL5 Evaluating
L2=1mH, and mutual inductance between the coils M=10 H and C=10pF.
13. List the five characteristics of an amplifier which are modified by negative BTL4 Analyzing
feedback.
14. Elaborate on Piezo electric effect. BTL 6 Creating

15. List out the advantages of crystal oscillator? BTL 1 Remembering

16. Examine the effects on bandwidth and output impedance due to various types BTL4 Analyzing
of feedback.
17. Illustrate the expression for frequency of oscillation of a Wein bridge oscillator BTL 2 Understanding

18. Distinguish the negative and positive feedback? BTL4 Analyzing

19. Identify the limitations of LC and RC oscillators BTL3 Applying

20. A wein bridge oscillator is used for operate at fo=10KHz. If the value of R is BTL 5 Evaluating
100. Estimate the value of capacitor.
PART-B

1. Illustrate the circuit of CE amplifier with current series feedback and obtain the BTL 2 Remembering
expression for feedback ratio, voltage gain, input and output resistances. (13)
2 Explain the operation of Colpitts Oscillator with neat circuit diagram. Also BTL 2 Remembering
derive the expressions for the frequency of oscillation and the condition for
maintenance of oscillation. (13)
3. Calculate Rif, Rof, Av and Avf for the following BTL 4 Analyzing
(i) Voltage hunt feedback amplifier
(ii) Current series feedback amplifier (7+6)
EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.
 4. Outline the following with neat diagram.
(i) RC phase shift oscillator.
BTL 2 Understanding
(ii) Hartley oscillator. (7+6)

5 Make use of a circuit diagram explain the operation of the following BTL 3 Understanding
oscillators.
(i) Wein bridge oscillator (5)
(ii) Design a Wein bridge oscillator circuit to oscillate at a
frequency of 20 kHZ. (4)
(iii) Crystal oscillator. (5)

6 Sketch a circuit diagram of a two stage capacitor coupled BJT amplifier that BTL 1 Remembering
uses series voltage negative feedback. Describe how the feedback operates. (13)

7 Show the circuit diagram explain the operation of an RC phase shift oscillator BTL 1 Remembering
and derive the condition for oscillation and resonant frequency with BJT. (13)

8 Take part in the discussion of the four types of topology for feedback of an BTL 4 Analyzing
amplifier. Derive the expression for gain with feedback. Mention the advantages
of negative feedback amplifier. (13)
9 Design a Colpitts oscillator with C1 = 100pf and C2 = 7500pf. The inductance is BTL6 Creating
variable. Determine the range of inductance values, if the frequency of
oscillation is to vary between 950 KHz and 2050 KHz. (13)
10 A Hartley oscillator is designed with L1 = 2mH, L2 = 20H and a
variable capacitance. Find the range of capacitance value if the
BTL 1 Remembering
frequency of oscillation is varied between 950 to 2050 KHZ (13)
11 Explain the general characteristics of a negative feedback amplifier.
Represent voltage series, voltage shunt, current series and current shunt.
BTL 4 Analyzing
(13)
12 What is the condition for oscillation of a Hartley oscillator. Briefly BTL 1 Remembering
explain the operation and derive the equation for fr and hfe. (13)
13 Two identical amplifier stages, each with voltage gain of 20dB and B.W
of 25kHz are cascaded. To improve gain stability the cascade is provided
BTL 5 Evaluating
with negative feedback to the extent of 10%. Estimate the effective gain
and bandwidth. (13)
14 With a neat circuit diagram, describe the working of a Wien bridge
oscillator. Derive an expression for the resonant frequency. Give its
BTL 3 Understanding
advantages and disadvantages? (13)

PART C

1. An amplifier has a mid frequency gain of 100 and a bandwidth of 200

kHz.
a) What will be the new bandwidth and gain if 5% negative feedback is
introduced.
EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.
 (b) What should be the amount of feedback, if the bandwidth is restricted BTL 5 Evaluating
to 1 MHz.

2. The frequency of oscillation of a Colpitts oscillator is given by

1
F0= 12
2(1+2)

Where L,C1 and C2 are the frequency determining components. Such a BTL 6 Creating
circuit operates at 450kHz with C1= C2.What will be the oscillation
frequency if the value of C2 is doubled.

EC 6202 Electronic Devices And Circuits (2016-17) Odd semester.