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FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V) rDS(on) (W) ID (A) Qg (Typ) D Advanced High Cell Density Process
0.018 @ VGS = 10 V
D 100% Rg Tested
9.6
30 25
0.030 @ VGS = 4.5 V 7.5 APPLICATIONS
D Load Switches
Notebook PCs
Desktop PCs
S
SO-8
S 1 8 D
S 2 7 D G
S 3 6 D
G 4 5 D
Top View D
P-Channel MOSFET
Notes
a. Surface Mounted on 1 x 1 FR4 Board.
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 3.0 V
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 30 V, VGS = 0 V, TJ = 55_C 5
On-State Drain Currenta ID(on) VDS v 5 V, VGS = 10 V 50 A
VGS = 10 V, ID = 9.6 A 0.014 0.018
On State Resistancea
Drain Source On-State
Drain-Source rDS(on)
DS( ) W
VGS = 4.5 V, ID = 7.5 A 0.023 0.030
Forward Transconductancea gfs VDS = 15 V, ID = 9.6 A 30 S
Diode Forward Voltagea VSD IS = 2.1 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
25_C
40 40
4V
125_C
I D Drain Current (A)
30 30
20 20
10 10
3V
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5
0.04
C Capacitance (pF)
2400
Ciss
0.03
VGS = 4.5 V
1600
0.02
VGS = 10 V
800 Coss
0.01
Crss
0.00 0
0 10 20 30 40 50 0 6 12 18 24 30
ID = 9.6 A ID = 9.6 A
8 1.4
rDS(on) On-Resiistance
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 10 20 30 40 50 50 25 0 25 50 75 100 125 150
Qg Total Gate Charge (nC) TJ Junction Temperature (_C)
0.04
r DS(on) On-Resistance ( W )
I S Source Current (A)
ID = 9.6 A
TJ = 150_C 0.03
10
0.02
TJ = 25_C
0.01
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD Source-to-Drain Voltage (V) VGS Gate-to-Source Voltage (V)
0.4
60
V GS(th) Variance (V)
ID = 250 mA
0.2
Power (W)
40
0.0
20
0.2
0.4 0
50 25 0 25 50 75 100 125 150 102 101 1 10 100 600
TJ Temperature (_C) Time (sec)
10
I D Drain Current (A)
P(t) = 0.001
P(t) = 1
TA = 25_C
0.1 Single Pulse P(t) = 10
dc
BVDSS Limited
0.01
0.1 1 10 100
VDS Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
104 103 102 101 1 10 100 600
Square Wave Pulse Duration (sec)
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
104 103 102 101 1 10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72029.
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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