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PD - 94004B

IRFP260N
HEXFET Power MOSFET
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = 200V
l 175C Operating Temperature
l Fast Switching RDS(on) = 0.04
l Fully Avalanche Rated G
l Ease of Paralleling ID = 50A
l Simple Drive Requirements S

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where


higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC

Absolute Maximum Ratings


Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V 50
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 35 A
IDM Pulsed Drain Current 200
PD @TC = 25C Power Dissipation 300 W
Linear Derating Factor 2.0 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 560 mJ
IAR Avalanche Current 50 A
EAR Repetitive Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt 10 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)

Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 0.50
RCS Case-to-Sink, Flat, Greased Surface 0.24 C/W
RJA Junction-to-Ambient 40
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IRFP260N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.26 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.04 VGS = 10V, ID = 28A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 27 S VDS = 50V, ID = 28A
25 VDS = 200V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 160V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 234 ID = 28A
Qgs Gate-to-Source Charge 38 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge 110 VGS = 10V
td(on) Turn-On Delay Time 17 VDD = 100V
tr Rise Time 60 ID = 28A
ns
td(off) Turn-Off Delay Time 55 RG = 1.8
tf Fall Time 48 VGS = 10V
Between lead, D
LD Internal Drain Inductance 5.0
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 13
and center of die contact S

Ciss Input Capacitance 4057 VGS = 0V


Coss Output Capacitance 603 pF VDS = 25V
Crss Reverse Transfer Capacitance 161 = 1.0MHz

Source-Drain Ratings and Characteristics


Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
50
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

200
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 28A, VGS = 0V


trr Reverse Recovery Time 268 402 ns TJ = 25C, IF = 28A
Qrr Reverse Recovery Charge 1.9 2.8 C di/dt = 100A/s
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Repetitive rating; pulse width limited by ISD 28A, di/dt 486A/s, VDD V(BR)DSS,
max. junction temperature. TJ 175C
Starting TJ = 25C, L = 1.5mH Pulse width 400s; duty cycle 2%.
RG = 25, IAS = 28A.

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IRFP260N
1000 1000 VGS
VGS
TOP 15V TOP 15V
10V 10V

I D , Drain-to-Source Current (A)


I D , Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 100 5.0V
BOTTOM 4.5V BOTTOM 4.5V

4.5V
10 10

4.5V

1 1

20s PULSE WIDTH 20s PULSE WIDTH


TJ = 25 C TJ = 175 C
0.1 0.1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.5
ID = 50A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

3.0

2.5
100
(Normalized)

TJ = 175 C
2.0

1.5
TJ = 25 C
10
1.0

0.5
V DS = 50V
20s PULSE WIDTH VGS = 10V
1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance


Vs. Temperature

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IRFP260N

8000 16
VGS = 0V, f = 1 MHZ ID = 28A
Ciss = Cgs + Cgd, Cds SHORTED V DS= 160V

VGS , Gate-to-Source Voltage (V)


7000 V DS= 100V
Crss = Cgd
V DS= 40V
6000 Coss = Cds + Cgd
12
C, Capacitance(pF)

Ciss
5000

4000 8

Coss
3000

2000 4
Crss
1000

0 0
0 50 100 150 200
1 10 100 1000
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.


Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

ID , Drain Current (A)

100
TJ = 175 C 100 10us

10 100us

TJ = 25 C
10
1ms
1

TC = 25 C 10ms
TJ = 175 C
V GS = 0 V Single Pulse
0.1 1
0.2 0.6 1.0 1.4 1.8 2.2 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area


Forward Voltage
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IRFP260N
RD
50 VDS
50
VGS
D.U.T.
40 RG
40 V
+
DD
ID , Drain Current (A)

-
ID , Drain Current (A)

10V
30
30 Pulse Width 1 s
Duty Factor 0.1 %

20
20 Fig 10a. Switching Time Test Circuit

VDS
10 90%
10

0
0 25 50 75 100 125 150 175
25 50 T 75
, Case100 125
Temperature (150
C) 175 10%
C
TC , Case Temperature ( C) VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

1
Thermal Response(Z thJC )

D = 0.50

0.20
0.1
0.10
0.05
0.02
0.01 SINGLE PULSE
(THERMAL RESPONSE) PDM
0.01
t1
t2

Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP260N

EAS , Single Pulse Avalanche Energy (mJ)


1500
15V
ID
TOP 11A
20A
BOTTOM 28A
L DRIVER
VDS
1000

RG D.U.T +
V
- DD
IAS A
20V
tp 0.01
500
Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy


Vs. Drain Current

I AS

Fig 12b. Unclamped Inductive Waveforms


Current Regulator
Same Type as D.U.T.

50K

12V .2F
QG .3F

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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IRFP260N
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations


D.U.T
Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-


RG dv/dt controlled by RG +
Driver same type as D.U.T. V DD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive


P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

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IRFP260N
TO-247AC Package Outline Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information


EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY PART NUMBER
LOT CODE 5657 INTERNATIONAL
ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30

IN THE ASSEMBLY LINE "H" LOGO 035H


56 57
Note: "P" in assembly line DATE CODE
position indicates "Lead-Free" ASSEMBLY YEAR 0 = 2000
LOT CODE WEEK 35
LINE H

Data and specifications subject to change without notice.


This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/