FGL40N120AN 1200V NPT IGBT

July 2007

FGL40N120AN IGBT
1200V NPT IGBT
Features Description
High speed switching Employing NPT technology, Fairchilds AN series of IGBTs pro-
vides low conduction and switching losses. The AN series offers
Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
an solution for application such as induction heating (IH), motor
High input impedance control, general purpose inverters and uninterruptible power
supplies (UPS).
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.

TO-264
G C E E

Absolute Maximum Ratings

Symbol Parameter FGL40N120AN Units
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage 25 V
Collector Current @TC = 25C 64 A
IC
Collector Current @TC = 100C 40 A
ICM(1) Pulsed Collector Current 160 A
Maximum Power Dissipation @TC = 25C 500 W
PD
Maximum Power Dissipation @TC = 100C 200 W
Short Circuit Withstand Time,
SCWT 10 s
VCE = 600V, VGE = 15V, TC = 125C
TJ Operating Junction Temperature -55 to +150 C
TSTG Storage Temperature Range -55 to +150 C
Maximum Lead Temp. for Soldering
TL 300 C
Purposes, 1/8 from Case for 5 seconds
Notes:
(1) Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.25 C/W
RJA Thermal Resistance, Junction-to-Ambient -- 25 C/W

2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGL40N120AN Rev. A1
 FGL40N120AN 1200V NPT IGBT
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGL40N120AN FGL40N120AN TO-264 - - 25

Electrical Characteristics of the IGBT TC = 25C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V
BVCES/ Temperature Coefficient of Breakdown
VGE = 0V, IC = 1mA -- 0.6 -- V/C
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- 250 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250A, VCE = VGE 3.5 5.5 7.5 V
IC = 40A, VGE = 15V -- 2.6 3.2 V
Collector to Emitter IC = 40A, VGE = 15V,
VCE(sat) -- 2.9 -- V
Saturation Voltage TC = 125C
IC = 64A, VGE = 15V -- 3.15 -- V

Dynamic Characteristics
Cies Input Capacitance -- 3200 -- pF
VCE = 30V, VGE = 0V
Coes Output Capacitance -- 370 -- pF
f = 1MHz
cres Reverse Transfer Capacitance -- 125 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 15 -- ns
tr Rise Time -- 20 -- ns
td(off) Turn-Off Delay Time -- 110 -- ns
VCC = 600V, IC = 40A,
tf Fall Time RG = 5, VGE = 15V, -- 40 80 ns
Inductive Load, TC = 25C
Eon Turn-On Switching Loss -- 2.3 3.45 mJ
Eoff Turn-Off Switching Loss -- 1.1 1.65 mJ
Ets Total Switching Loss -- 3.4 5.1 mJ
td(on) Turn-On Delay Time -- 20 -- ns
tr Rise Time -- 25 -- ns
td(off) Turn-Off Delay Time -- 120 -- ns
VCC = 600V, IC = 40A,
tf Fall Time RG = 5, VGE = 15V, -- 45 -- ns
Eon Turn-On Switching Loss Inductive Load, TC = 125C -- 2.5 -- mJ
Eoff Turn-Off Switching Loss -- 1.8 -- mJ
Ets Total Switching Loss -- 4.3 -- mJ
Qg Total Gate charge -- 220 330 nC
VCE = 600V, IC = 40A,
Qge Gate-Emitter Charge -- 25 38 nC
VGE = 15V
Qgc Gate-Collector Charge -- 130 195 nC

2 www.fairchildsemi.com
FGL40N120AN Rev. A1
 FGL40N120AN 1200V NPT IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage
Characteristics
300 160
TC = 25C
20V Common Emitter
17V VGE = 15V
250 15V o
TC = 25 C
120 o
TC = 125 C
Collector Current, IC [A]

Collector Current, IC [A]

200 12V

150 80

100 VGE = 10V

40
50

0 0
0 2 4 6 8 10 0 2 4 6
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Saturation Voltage vs. Case Figure 4. Load Current vs. Frequency
Temperature at Variant Current Level
5 80
Common Emitter VCC = 600V
VGE = 15V Load Current : peak of square wave
70
Collector-Emitter Voltage, VCE [V]

4 60
80A
Load Current [A]

50

3 40
40A
30

2 20
IC = 20A
Duty cycle : 50%
10
TC = 100C
Power Dissipation = 100W
1 0
25 50 75 100 125 0.1 1 10 100 1000

Case Temperature, TC [C] Frequency [kHz]

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
TC = 25C TC = 125C
Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

16 16

12 12

8 8

80A 80A
4 4 40A
40A

IC = 20A IC = 20A
0 0
0 4 8 12 16 20 0 4 8 12 16 20

Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

3 www.fairchildsemi.com
FGL40N120AN Rev. A1
 FGL40N120AN 1200V NPT IGBT
Typical Performance Characteristics (Continued)

Figure 7. Capacitance Characteristics Figure 8. Turn-On Characteristics vs. Gate

Resistance
6000
Common Emitter
VGE = 0V, f = 1MHz
5000 TC = 25C
100
Ciss

Switching Time [ns]

4000
Capacitance [pF]

tr

3000

2000 Common Emitter

td(on)
Coss VCC = 600V, VGE = 15V
IC = 40A
1000 Crss TC = 25C
TC = 125C
0 10
1 10 0 10 20 30 40 50 60 70

Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [ ]

Figure 9. Turn-Off Characteristics vs. Figure 10. Switching Loss vs. Gate Resistance
Gate Resistance

Common Emitter Common Emitter

VCC = 600V, VGE = 15V, IC = 40A VCC = 600V, VGE = 15V
1000
TC = 25C IC = 40A
td(off)
TC = 125C TC = 25C
10
TC = 125C
Switching Loss [mJ]
Switching Time [ns]

Eon

100

Eoff
tf

10
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70

Gate Resistance, RG [] Gate Resistance, RG []

Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.
Collector Current Collector Current

Common Emitter Common Emitter

VGE = 15V, RG = 5 VGE = 15V, RG = 5

100 TC = 25C tr TC = 25C

TC = 125C TC = 125C
td(off)
Switching Time [ns]
Switching Time [ns]

100

tf

td(on)

10

20 30 40 50 60 70 80 20 30 40 50 60 70 80

Collector Current, IC [A] Collector Current, IC [A]

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FGL40N120AN Rev. A1
 FGL40N120AN 1200V NPT IGBT
Typical Performance Characteristics (Continued)

Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics
16
Common Emitter Common Emitter
VGE = 15V, RG = 5 RL = 15
14
TC = 25C Vcc = 200V
10 Eon TC = 25C
600V

Gate-Emitter Voltage, VGE [V]

TC = 125C 12
Switching Loss [mJ]

10
400V

Eoff 8

1
6

0.1 0
20 30 40 50 60 70 80 0 50 100 150 200 250

Collector Current, IC [A] Gate Charge, Qg [nC]

Figure 15. SOA Characteristics Figure 16. Turn-Off SOA

Ic MAX (Pulsed)
50s
100 Ic MAX (Continuous)
100s 100
Collector Current, Ic [A]

Collector Current, IC [A]

1ms
10

DC Operation

1
10

Single Nonrepetitive
0.1 o
Pulse Tc = 25 C
Curves must be derated
linearly with increase Safe Operating Area
o
in temperature VGE = 15V, TC = 125 C
0.01 1
0.1 1 10 100 1000 1 10 100 1000

Collector - Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 17. Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.1 0.5

0.2

0.1

0.01 0.05 Pdm

Pdm

t1
t1
0.02
t2
t2
0.01
single pulse Duty
Dutyfactor
factorDD==t1
t1//t2
t2
Peak
PeakTj PdmZthjc
Tj==Pdm Zthjc++TTCC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1 10

Rectangular Pulse Duration [sec]

5 www.fairchildsemi.com
FGL40N120AN Rev. A1
 FGL40N120AN 1200V NPT IGBT
Mechanical Dimensions

TO-264
20.00 0.20

6.00 0.20
(4.00)
(2.00)
(8.30) (8.30)
(1.00)
(9.00)
(9.00)

(0.50)
(11.00)

(R

3.3
2.0

20.00 0.20
0)

0 0

(R1
.20

.00
1.50 0.20

)
(2.00)

(7.00) (7.00)

4.90 0.20
2.50 0.10

(1.50)
(1.50) (1.50)
20.00 0.50

2.50 0.20 3.00 0.20

+0.25
1.00 0.10

+0.25
5.45TYP 5.45TYP 0.60 0.10 2.80 0.30
[5.45 0.30] [5.45 0.30]
5.00 0.20
3.50 0.20

(0.15)
(2.80)
(1.50)

Dimensions in Millimeters

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FGL40N120AN Rev. A1
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Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status Definition
Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
First Production This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
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Not In Production This datasheet contains specifications on a product that has been
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reference information only.
Rev. I29

2007 Fairchild Semiconductor Corporation www.fairchildsemi.com