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Ordering Information
PART NUMBER PACKAGE BRAND
G
HUF75332G3 TO-247 75332G
HUF75332P3 TO-220AB 75332P S
HUF75332S3S TO-263AB 75332S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75332S3ST.
Packaging
JEDEC STYLE TO-247 JEDEC TO-220AB
SOURCE SOURCE
DRAIN DRAIN
GATE
GATE
DRAIN
(FLANGE)
DRAIN
(TAB)
JEDEC TO-263AB
DRAIN
GATE (FLANGE)
SOURCE
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
1.2 80
POWER DISSIPATION MULTIPLIER
1.0
ID, DRAIN CURRENT (A) 60
0.8
0.6 40
0.4
20
0.2
0
0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
THERMAL IMPEDANCE
0.1
ZJC, NORMALIZED
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC x RJC + TC
SINGLE PULSE
0.01
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION (s)
1000
TC = 25oC FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
IDM, PEAK CURRENT (A)
I = I25 175 - TC
150
VGS = 10V
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
50
10-5 10-4 10-3 10-2 10-1 100 101
t, PULSE WIDTH (s)
500
If R = 0
500 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
TJ = MAX RATED
If R 0
T C = 25 oC IAS, AVALANCHE CURRENT (A) tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
ID, DRAIN CURRENT (A)
100
100
100s oC
STARTING
STARTINGTJTJ
= 25
= 25oC
10 1ms
OPERATION IN THIS STARTING TJ = 150oC
AREA MAY BE
LIMITED BY rDS(ON) 10ms
VDSS(MAX) = 55V
10
1 0.001 0.01 0.1 1 10
1 10 100 200 tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
150 150
PULSE DURATION = 80s 25oC
DUTY CYCLE = 0.5% MAX
120 VGS = 20V 120
ID, DRAIN CURRENT (A)
VGS = 10V
VGS = 7V -55oC
VGS = 6V
90 90
175oC
60 60
VGS = 5V
30 30
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
TC = 25oC VDD = 15V
0 0
0 1.5 3.0 4.5 6.0 7.5 0 1.5 3.0 4.5 6.0 7.5
VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V)
2.5 1.2
PULSE DURATION = 80s VGS = VDS, ID = 250A
NORMALIZED DRAIN TO SOURCE
THRESHOLD VOLTAGE
2.0
NORMALIZED GATE
ON RESISTANCE
1.0
1.5
0.8
1.0
0.5 0.6
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
RESISTANCE vs JUNCTION TEMPERATURE JUNCTION TEMPERATURE
1.2 2000
ID = 250A VGS = 0V, f = 1MHz
NORMALIZED DRAIN TO SOURCE
1.1
CISS
1000
1.0
COSS
500
CRSS
0.9
0
-80 -40 0 40 80 120 160 200 0 10 20 30 40 50 60
TJ , JUNCTION TEMPERATURE (oC) VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE
10
VGS , GATE TO SOURCE VOLTAGE (V)
4 WAVEFORMS IN
DESCENDING ORDER:
ID = 60A
2 ID = 45A
ID = 30A
VDD = 30V ID = 15A
0
0 10 20 30 40 50 60
Qg, GATE CHARGE (nC)
VDS
BVDSS
L tP
VDS
tP
0V IAS
0
0.01
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDS
RL VDD Qg(TOT)
VDS
VGS = 20V
VGS Qg(10)
+
VDD
VGS VGS = 10V
-
DUT VGS = 2V
IG(REF) 0
Qg(TH)
Qgs Qgd
Ig(REF)
0
FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORM
td(ON) td(OFF)
RL tr tf
VDS
90% 90%
+
VGS
VDD 10% 10%
- 0
DUT 90%
RGS
VGS 50% 50%
PULSE WIDTH
VGS 10%
0
FIGURE 18. SWITCHING TIME TEST CIRCUIT FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*180),4.6))}
.MODEL DBODYMOD D (IS = 1.3e-12 RS = 3.0e-3 IKF = 20 XTI = 6 TRS1 = 2.7e-3 TRS2 = 7.0e-7 CJO = 1.7e-9 TT = 4.0e-8 M = 0.45 vj = 0.75)
.MODEL DBREAKMOD D (RS = 1.71e-2 IKF = 1.0e- 5TRS1 = -4.0e- 4TRS2 = -1.55e-5)
.MODEL DPLCAPMOD D (CJO = 1.8e- 9IS = 1e-30 N = 1 M = 0.9 vj = 1.45)
.MODEL MMEDMOD NMOS (VTO = 3.183 KP = 2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.3)
.MODEL MSTROMOD NMOS (VTO = 3.66 KP = 51.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.703 KP = 0.008 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 13)
.MODEL RBREAKMOD RES (TC1 = 1.05e- 3TC2 = 4.5e-7)
.MODEL RDRAINMOD RES (TC1 = 1.16e-2 TC2 = 1.7e-5)
.MODEL RSLCMOD RES (TC1 = 3.96e-3 TC2 = 2.7e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-5)
.MODEL RVTHRESMOD RES (TC1 = -2.8e-3 TC2 = -1.0e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.75e- 3TC2 = 5.0e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8 VOFF= -3)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3 VOFF= -8)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= 0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/180))** 4.6))
}
}
HUF75332
RTHERM3 CTHERM3
tl CASE
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. H4