NTP75N03L09,

NTB75N03L09

Power MOSFET
75 Amps, 30 Volts
NChannel TO220 and D2PAK
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This Logic Level Vertical Power MOSFET is a general purpose part
that provides the best of design available today in a low cost power 75 AMPERES, 30 VOLTS
package. Avalanche energy issues make this part an ideal design in. RDS(on) = 8 mW
The draintosource diode has a ideal fast but soft recovery.
NChannel
Features D
UltraLow RDS(on), Single Base, Advanced Technology
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits G
IDSS and VDS(on) Specified at Elevated Temperatures
High Avalanche Energy Specified S
ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
MARKING DIAGRAMS
PbFree Packages are Available & PIN ASSIGNMENTS
4
Typical Applications
Drain
Power Supplies 4
Inductive Loads
PWM Motor Controls
Replaces MTP75N03HDL and MTB75N03HDL in Many TO220
75N
03L09G
Applications CASE 221A AYWW
STYLE 5

1 1 3
2 Gate Source
3 2
Drain
4
Drain

4 75N
1 D2PAK 03L09G
2 CASE 418AA AYWW
STYLE 2
3
2
1 3
Drain
Gate Source

75N03L09 = Device Code

A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

August, 2005 Rev. 7 NTP75N03L09/D
 NTP75N03L09, NTB75N03L09

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating Symbol Value Unit
DraintoSource Voltage VDSS 30 Vdc
DraintoGate Voltage VDGB 30 Vdc
(RGS = 10 MW)
GatetoSource Voltage Continuous VGS 20 Vdc
Nonrepetitive (tp 10 ms) VGS 24 Vdc
Drain Current
Continuous @ TC = 25C ID 75 Adc
Continuous @ TC = 100C ID 59
Single Pulse (tp 10 ms) IDM 225 Apk

Total Power Dissipation @ TC = 25C PD 125 W

Derate above 25C 1.0 W/C
Total Power Dissipation @ TA = 25C (Note 1) 2.5 W

Operating and Storage Temperature Range TJ and Tstg 55 to 150 C

Single Pulse DraintoSource Avalanche Energy Starting TJ = 25C EAS 1500 mJ
(VDD = 38 Vdc, VGS = 10 Vdc, L = 1 mH, IL(pk) = 55 A, VDS = 40 Vdc)
Thermal Resistance
JunctiontoCase RqJC 1.0 C/W
JunctiontoAmbient RqJA 62.5
JunctiontoAmbient (Note 1) RqJA 50

Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds TL 260 C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended pad size.

ORDERING INFORMATION
Device Package Shipping
NTP75N03L09 TO220 50 Units/Rail
NTP75N03L09G TO220 50 Units/Rail
(PbFree)

NTB75N03L09 D2PAK 50 Units/Rail

NTB75N03L09G D2PAK 50 Units/Rail
(PbFree)
NTB75N03L09T4 D2PAK 800 Tape & Reel
NTB75N03L09T4G D2PAK 800 Tape & Reel
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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 NTP75N03L09, NTB75N03L09

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain Source Breakdown Voltage (Note 2) V(BR)DSS
(VGS = 0 Vdc, ID = 250 mAdc) 30 34 Vdc
Temperature Coefficient (Negative) 57 mVC

Zero Gate Voltage Drain Current IDSS mAdc

(VDS = 30 Vdc, VGS = 0 Vdc) 1.0
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 150C) 10

GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS 100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2) VGS(th)
(VDS = VGS, ID = 250 mAdc) 1.0 1.6 2.0 Vdc
Threshold Temperature Coefficient (Negative) 6 mVC

Static DraintoSource OnResistance (Note 2) RDS(on) mW

(VGS = 5.0 Vdc, ID = 37.5 Adc) 6.5 8.0

Static DraintoSource On Resistance (Note 2) VDS(on) Vdc

(VGS = 10 Vdc, ID = 75 Adc) 0.52 0.68
(VGS = 10 Vdc, ID = 37.5 Adc, TJ = 125C) 0.35 0.50

Forward Transconductance (Notes 2 & 4) (VDS = 3 Vdc, ID = 20 Adc) gFS 58 mW

DYNAMIC CHARACTERISTICS (Note 4)
Input Capacitance Ciss 4398 5635 pF
(VDS = 25 Vdc, VGS = 0,
Output Capacitance f = 1.0 MHz) Coss 1160 1894
Transfer Capacitance Crss 317 430
SWITCHING CHARACTERISTICS (Notes 3 & 4)
TurnOn Delay Time td(on) 16 30 ns
(VGS = 5.0 Vdc,
Rise Time VDD = 20 Vdc, ID = 75 Adc, tr 130 200
RG = 4.7 W) (Note 2)
TurnOff Delay Time td(off) 65 110
Fall Time tf 105 175
Gate Charge (VGS = 5.0 Vdc, QT 57 75 nC
ID = 75 Adc,
VDS = 24 Vdc) (Note 2) Q1 11 15
Q2 34 50
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (IS = 75 Adc, VGS = 0 Vdc) VSD 1.19 1.25 Vdc
(IS = 75 Adc, VGS = 0 Vdc, TJ = 125C) 1.09
(Note 2)

Reverse Recovery Time trr 37 ns

(Note 4) (IS = 75 Adc, VGS = 0 Vdc
dlS/dt = 100 A/ms) (Note 2) ta 20
Reverse Recovery Stored tb 17 mC
Charge (Note 4)
QRR 0.023
2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
4. From characterization test data.

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 NTP75N03L09, NTB75N03L09

120 150
VGS = 4 V
VGS = 3.5 V 135 VDS 10 V
VGS = 4.5 V
ID, DRAIN CURRENT (AMPS)

ID, DRAIN CURRENT (AMPS)

120
90 VGS = 5 V
105
VGS = 6 V
VGS = 8 V 90
60 VGS = 10 V 75
VGS = 3 V
60
45 TJ = 25C
30 TJ = 25C
VGS = 2.5 V 30
TJ = 100C
15 TJ = 55C
0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0.5 1 1.5 2 2.5 3 3.5 4
VDS, DRAINTOSOURCE VOLTAGE (VOLTS) VGS, GATETOSOURCE VOLTAGE (VOLTS)

Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAINTO SOURCE RESISTANCE (W)

RDS(on), DRAINTO SOURCE RESISTANCE (W)

0.0085 0.009
VGS = 5 V TJ = 25C
0.008
TJ = 100C
0.0075 0.008

0.007
TJ = 25C 0.007
0.0065 VGS = 5 V
0.006
0.006
0.0055 VGS = 10 V
TJ = 55C
0.005 0.005
0.0045
0.004 0.004
10 20 30 40 50 60 70 80 90 100 120 0 20 40 60 80 100 120
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

Figure 3. OnResistance vs. Drain Current and Figure 4. OnResistance vs. Drain Current and
Temperature Gate Voltage
RDS(on), DRAINTO SOURCE RESISTANCE (NORMALIZED)

1.6 1000
VGS = 5.0 V VGS = 0 V
ID = 37.5 A
1.4
TJ = 125C
IDSS, LEAKAGE (nA)

100
1.2
TJ = 100C
1
10

0.8

0.6 1
50 25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE (C) VDS, DRAINTOSOURCE VOLTAGE (VOLTS)

Figure 5. OnResistance Variation Temperature Figure 6. DraintoSource Leakage Current vs.

Voltage

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 NTP75N03L09, NTB75N03L09

12000 10 30

VGS, GATETOSOURCE VOLTAGE (V)

VGS VDS
VDS = 0 V
10000 VGS = 0 V 8
TJ = 25C VGS
C, CAPACITANCE (pF)

8000 VDS 20
6
6000 QT
Ciss
4 Q1 Q2
4000 10
Coss
2 ID = 75 A
2000
TJ = 25C
Crss
Q3
0 0 0
10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 22 25 0 10 20 30 40 50 60
GATETOSOURCE OR DRAINTOSOURCE Qg, TOTAL GATE CHARGE (nC)
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge

1000 75
70 VGS = 0 V
tr IS, SOURCE CURRENT (AMPS) 65 TJ = 25C
60
55
50
t, TIME (ns)

tf 45
40
100
35
td(off) 30
25
20
td(on) 15
TJ = 25C VDD = 15 V 10
ID = 75 A VGS = 5 V 5
10 0
1 2.2 4.7 6.2 9.1 10 20 0.0 0.2 0.4 0.6 0.8 1.0
RG, GATE RESISTANCE (W) VSD, SOURCETODRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
EAS, SINGLE PULSE DRAINTOSOURCE

1600

1400 ID = 75 A
AVALANCHE ENERGY (mJ)

1200

1000

800

600

400

200

0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (C)

Figure 11. Maximum Avalanche Energy vs.

Starting Junction Temperature

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 NTP75N03L09, NTB75N03L09

PACKAGE DIMENSIONS

TO220
CASE 221A09
ISSUE AA

NOTES:
SEATING
T PLANE 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
T 3. DIMENSION Z DEFINES A ZONE WHERE ALL
S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
Q A DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U
C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L R L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
V J Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 1.15
Z 0.080 2.04

STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

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 NTP75N03L09, NTB75N03L09

PACKAGE DIMENSIONS

D2PAK
CASE 418AA01
ISSUE O

NOTES:
C 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
E 2. CONTROLLING DIMENSION: INCH.
V
B
W INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
C 0.160 0.190 4.06 4.83
A D 0.020 0.036 0.51 0.92
S E 0.045 0.055 1.14 1.40
1 2 3
F 0.310 7.87
G 0.100 BSC 2.54 BSC
J 0.018 0.025 0.46 0.64
T K K 0.090 0.110 2.29 2.79
SEATING W M 0.280 7.11
PLANE S 0.575 0.625 14.60 15.88
G J V 0.045 0.055 1.14 1.40
STYLE 2:
D 3 PL PIN 1. GATE
2. DRAIN
0.13 (0.005) M T B M 3. SOURCE
4. DRAIN

SOLDERING FOOTPRINT*

8.38
0.33

10.66 1.016
0.04 5.08
0.42 0.20

3.05
0.12
17.02
0.67
SCALE 3:1 inches
mm

*For additional information on our PbFree strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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 NTP75N03L09, NTB75N03L09

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