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SKEE 1063
PART A: ANSWER ALL (25) QUESTIONS (25 marks)
2. What types of impurity atoms are added to increase the number of conduction-band
electrons in intrinsic silicon?
A. bivalent D. trivalent
B. octavelent E. tetravalent
C. pentavalent
3. Although germanium diode has higher carrier mobility, silicon diode is preferred
because of the following reasons except
A. Its maximum operating temperature is higher.
B. Its forward voltage (VON) is higher.
C. It is widely encountered in nature and therefore cheaper.
D. Its PIV is higher.
E. Its reverse current is smaller.
6. There is a small amount of current across the barrier of a reverse-biased diode. This
current is called
A. forward-bias current. D. reverse saturation current.
B. reverse breakdown current. E. avalanche current.
C. conventional current.
7. For the circuit in Figure 1(a), a silicon diode is used. Which voltage measurement will
produce the waveform in Figure 1(b).
V(V)
V1
V3 wt
VS V5 0
V2 -2
10 sin t V
2V V4
- 12
(a) (b)
Figure 1
A. V1 B. V2 C. V3 D. V4 E. V5
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SKEE 1063
D2
Figure 2
A. The rms value of secondary winding voltage (Vsec) is 23 V.
B. PIV of D2 is 32.53 V.
C. The average output voltage Vo is 10.35 V.
D. V2 is 180 out of phase with Vpri.
E. At certain instance, both diodes can turn on at the same time.
9. In the operation of a half-wave rectifier with a capacitor-input filter, the ripple factor
can be lowered by ________ the value of the filter capacitor and ________ the load
resistor.
A. decreasing, decreasing D. increasing, increasing
B. decreasing, increasing E. maintaining, increasing
C. increasing, decreasing
10. Assuming that the output voltage of a half-wave rectifier and a full-wave rectifier has
the same positive peak value with the same input signal, the average output voltage of
the full-wave rectifier is higher than the half-wave rectifier because
A. full-wave rectifier uses more diodes.
B. there is a longer time interval between peaks in a half-wave rectifier.
C. the frequency of a full-wave rectifier is halved compared to the input frequency.
D. it utilises a centre-tap transformer.
E. its diodes PIV are higher.
5
SKEE 1063
vs vs
vo vo
B. E.
vs vs
vo vo
C.
vs
vo
13. For the circuit in Figure 3, assuming ideal diode, what is the minimum and maximum
value of RL to keep the diode in regulation?
IS RS IL
200 W IZ
VS RL V O
20 V VZ
10 V
Figure 3
A. minimum = 0, maximum = 200 W
B. minimum = 200 W, maximum =
C. minimum can't be calculated, maximum =
D. minimum = 200 W, maximum can't be calculated.
E. No answer.
14. Vacuum triode is an old voltage-controlled device. Which device resembles the
operation of this device?
A. FET D. Schottky diode
B. BJT E. NAND gate
C. Zener diode
15. The collector and emitter current of an npn transistor in the active-mode are 1.98 mA
and 2.0 mA respectively. The current gain DC is
A. 99 D. 100
B. 0.99 E. No answer
C. 9.9
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SKEE 1063
16. If the transistor in Figure 4 is in the active mode, the most positive voltage is the
- VCC
C
B
Figure 4
A. ground D. VBE
B. base E. VCE
C. collector
17. What is the order of doping, from heavily to lightly doped, for each region in a BJT?
A. base, collector, emitter D. collector, emitter, base
B. emitter, collector, base E. collector, base, emitter
C. emitter, base, collector
18. MOSFET has a very high input impedance due to the insulating layer of ________ in
its construction.
A. TiO2 D. SiO2
B. GaAs E. NaCl
C. C4
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SKEE 1063
19. The transfer characteristic of a transistor is given in Figure 5. From the graph, the
ID
5 mA
VGS
0 5V
Figure 5
V1 Vo
V2
Figure 6
A. NAND D. NOR
B. AND E. Exclusive-OR
C. OR
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SKEE 1063
22. The circuit in Figure 7 is a/an
5V
Vi Vo
Figure 7
A. inverter. D. CMOS buffer.
B. one-input NAND gate. E. drain-coupled rectifier.
C. CMOS amplifier.
23. Which device is a very efficient thyristor to control the speed of an AC fan motor?
A. 4-layer diode
B. Programmable Uni-junction Transistor (PUT)
C. triac
D. BJT
E. schottky diode
Figure 8
A. Zener D. Schottky
B. Photo E. Silicon
C. Light Emitting
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SKEE 1063
Q.1
(a) Refer to the circuit shown in Figure Q.1 (a). It is given that the Zener voltage (VZ) for
diode A is 3.3 V, while for diode B is 9.1 V. Forward voltage (VF) of both diodes is
similar with the value of 0.8 V. Sketch and label Vo(t).
(4 marks)
2 k
IZ
VZ = 15V VL
50 V RL
PZM = 900mW
N1:N2
D1 D2
49.5 Vrms Vo
Vpri Vsec
50 Hz
C1 420
D3 D4
Figure Q.1(d)
(i) Referring to Figure Q.1(d), determine the peak-to-peak ripple voltage, Vr(pp),
V1, and V2. (3 marks)
(ii) Calculate the value of capacitor C1. (2 marks)
(iii) Calculate the peak value of secondary voltage of the transformer, Vsec.
(2 marks)
(iv) If diode D2 is disconnected from the circuit, determine the resulting ripple
factor, r. Sketch and label VO.
(6 marks)
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SKEE 1063
Q.2 Consider a BJT amplifier circuit shown in Figure Q.2. The transistors parameters are:
= 120, VBE = 0.7 V.
VCC = +15 V
R1 RC
40 k 2 k C2
C3
1.5 k
= 120
C1 50
R2
4 k
RE
vsig
150
Figure Q.2
(a) Draw and label the Thevenin equivalent circuit at the input of the amplifier circuit.
(6 marks)
(b) Calculate IBQ, ICQ and VCEQ. (7 marks)
(c) At temperature of 80 C, increases to 135. Determine the stability factor
I C
( S ( ) ) of the bias circuit. Assume that VBE remains unchanged.
(6 marks)
(d) If RE is removed, how does it affect the Q-point? State the new Q-point (VCEQ,
ICQ). (6 marks)
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SKEE 1063
Q.3 Figure Q.3 (a) is a MOSFET circuit configuration. Given that VT = 2 V and
k = 0.25 103 A/V2.
VDD + 20V
RD
R1
3.3 MW
22m F + 22 m F
VDS
-
R2 vo
vi 1.5 MW RS
47m F
680 W
Q.4 (a) One of the major applications of Bipolar Junction Transistor (BJT) is switching
circuit. BJT will be biased to operate alternately in cut- off and saturation regions.
It can be applied in digital circuits. Referring to the circuit in Figure Q.4 (a), given
VCC = 18V, = 120, VBE (ON) = 0.7 V, VLED = 1.5V, VCE(SAT) = 0.2 V, RC = 500
and RB = 6.6 k. Answer the following:
(i) Calculate the minimum value of the input voltage, VIN to ensure that the BJT
is ON to light up the LED.
(4 marks)
(ii) Explain what happen to the intensity of the LED if the value of is reduced?
Justify your answer.
(2 marks)
RC
RB
VIN VCC
(b) MOSFETs are unipolar devices and can be categorized into two families namely
N-channel MOSFET and P-channel MOSFET. It may operate in depletion or
enhancement mode depending on the applied gate bias. Figure Q.4 (b-i) and Figure
Q.4 (b-ii) displayed the implementation of MOSFETs in logic circuit Analyze by
obtaining the truth table for the circuits and determine its digital representations.
16
SKEE 1063
5V 5V
5V A B
Y
B
A
Y
VCC= 5V
IRC RC=
I1 R1= 4k
4k
VO
DX D1 D2 VB IB
VX V1
Q1
VY RB=
I2 IRB
10k
DY
NAME :
MATRIC NO. :
SECTION : .
LECTURER :
NAME :
MATRIC NO. :
SECTION : .
LECTURER :
0.1 5 0
5 0.1 0.8 5
5 5
PIV 2V p ( out ) 0.7
1
Vp
Vrms I E I B IC
2
Vp
V AVG VDC I C I B I CBO
Vrms 1 Vrms 1
r r
VDC 2 3 fRL C VDC 4 3 fRL C
Vp Vp
Vr ( pp ) Vr ( pp )
fRL C 2 fRL C
Vr ( pp ) I D (ON )
Vr ( rms ) k
2 3 VGS ( ON ) VGS (TH )
2
VVD
I D I S e T 1
2
I D k VGS VGS (TH )
VGS
I D I DSS 1 2
V
GS ( OFF )
2
V I C
I D I DSS 1 GS S
Vp
I C I C
S VBE S I CO
VBE I CO
CONFIDENTIAL
(ANSWER)
COURSE CODE : SKEE 1063
PROGRAMME : SKEE/SKEL/SKEM/SPACE
SECTION : 01/02/03/04/05/06/07/SPACE
TIME : 2 HOURS
DATE : 14th JUNE 2016
INSTRUCTION TO CANDIDATE :
PART A
1. E 2. C 3. B 4. A 5. B
6. D 7. C 8. E 9. D 10. B
Q.1
(a) Refer to the circuit shown in Figure Q.1 (a). It is given that the Zener voltage (VZ) for
diode A is 3.3 V, while for diode B is 9.1 V. Forward voltage (VF) of both diodes is
similar with the value of 0.8 V. Sketch and label Vo(t).
(4 marks)
2 k
Drawing (1 mark)
vo(t)
9.9 V
0
-4.1V
2 4 6 8 t (ms)
4
SKEE 1063 (ANSWER)
(b) Refer to the circuit shown in Figure Q.1 (b).
500 IS IL
IZ
VZ = 15V VL
50 V RL
PZM = 900mW
500 * 15
50 15
(1 mark)
214.28
(iii) Calculate the maximum load resistance, RLmax to ensure the power absorbed by
the Zener diode will not exceed the maximum power rating, PZM. (3 marks)
IZM = PZM/VZ = 900m/15 = 60mA (1 mark)
N1:N2
D1 D2
49.5 Vrms Vo
Vpri Vsec
50 Hz
C1 420
D3 D4
(1 mark)
(1 mark)
(1 mark)
6
SKEE 1063 (ANSWER)
(ii) Calculate the value of capacitor C1. (2 marks)
(2 marks)
(iii) Calculate the peak value of secondary voltage of the transformer, Vsec.
(2 marks)
(2 marks)
(iv) If diode D2 is disconnected from the circuit, determine the resulting ripple
factor, r. Sketch and label VO. (6 marks)
(1 mark)
Vo
12.6 V
10.2 V
VCC = +15 V
R1 RC
40 k 2 k C2
C3
1.5 k
= 120
C1 50
R2
4 k
RE
vsig
150
Figure Q2
(a) Draw and label the Thevenin equivalent circuit at the input of the amplifier circuit.
(6 marks)
15 V
2m
2 k
2m
2m
3.64 k
1.36 V
150
8
SKEE 1063 (ANSWER)
(b) Calculate IBQ, ICQ and VCEQ. (7 marks)
2.5m
2m
2.5m
2m
2m
(d) If RE is removed, how does it affect the Q-point? State the new Q-point (VCEQ, ICQ).
(6 marks)
1m
1m
1m
VCE=0 V 1m
1m
RD
R1
3.3 M
22m F + 22 m F
VDS
-
R2 vo
vi 1.5 M RS
47m F
680
ID k VGS VT 2 1
0.25mA/V 2 VGS 2V 2
VGS (V) 2 3 4 5 6 2
ID(mA) 0 0.25 1 2.25 4
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SKEE 1063 (ANSWER)
VDD R2 20 1.5 1
VG 6.25V
R1 R2 1.5 3.3
2
VGS (V) 0 6.25
VGS ID ID(mA) 9.19 0
V
VGG== -3.25V
6.25V
680 From the graph, the Q-point is: 2
IDQ = 2 mA, VGSQ = 4.9 V
11
SKEE 1063 (ANSWER)
(b) If the drain-source voltage is equal to 5 V, determine RD.
(4 marks)
Applying KVL at the output loop:
VDD IDRD VDS IDRS = 0 2
(c) Based on your answer in (a), determine VDsat value. Then, sketch and label its
drain characteristic curve (ID versus VDS) at the operating point.
(4 marks)
From (a), VGSQ = 4.9V, IDQ = 2 mA
2
VDSat VGS VT 4.9 2 2.9V
ID (mA)
2
2
VDS (V)
VDSat = 2.9V
(d) Determine source current, IS. Why IS is different/same from drain current, ID?
(3 marks)
3
Source current, IS = ID = 2 mA (because the gate is insulated, thus IG = 0)
(e) If you were to measure the drain current at VGS = +2 V, what would be the reading
of your multimeter for ID? Explain briefly.
(4 marks)
At VGS = +2 V, the drain current, ID = 0. 2
This is because the biasing voltage, VGS is not adequate to form a channel at the gate.
VGS has to be at least beyond the threshold voltage in order the current to flow through the
formed channel. 2
12
SKEE 1063 (ANSWER)
Q.4 (a) One of the major applications of Bipolar Junction Transistor (BJT) is switching
circuit. BJT will be biased to operate alternately in cut- off and saturation regions.
It can be applied in digital circuits. Referring to the circuit in Figure Q.4 (a), given
VCC = 18V, = 120, VBE (ON) = 0.7 V, VLED = 1.5V, VCE(SAT) = 0.2 V, RC = 500
and RB = 6.6 k. Answer the following:
(i) Calculate the minimum value of the input voltage, VIN to ensure that the BJT
is ON to light up the LED.
(4 marks)
VCC VLED VCE(SAT)
18 1.5 0.2
IC(SAT) 32.6mA 1
RC 100
The minimum IB(min) to light up the LED:
IC(SAT)
32.6 m
I B(min) 326 A 1
100
Calculate the input voltage:
(ii) Explain what happen to the intensity of the LED if the value of is reduced?
Justify your answer.
(2 marks)
if the value of is reduced , the value of IB(min) will increase but IC(SAT) still the 2
same. Thus, the intensity of the LED stay the same.
RC
RB
VIN VCC
13
SKEE 1063 (ANSWER)
Figure Q.4 (a)
(b) MOSFETs are unipolar devices and can be categorized into two families namely
N-channel MOSFET and P-channel MOSFET. It may operate in depletion or
enhancement mode depending on the applied gate bias. Figure Q.4 (b-i) and Figure
Q.4 (b-ii) displayed the implementation of MOSFETs in logic circuit. Analyze
the circuits and determine its digital representations.
5V 5V
5V A B
Y
B
A
Y
(ii)
P Q R
0 0 0
0 1 1
1 0 1 2
1 1 1
VCC= 5V
IRC RC=
I1 R1= 4k
4k
VO
DX D1 D2 VB IB
VX V1
Q1
VY RB=
I2 IRB
10k
DY
vX vY V1 I1 IB IC vO
(V) (V) (V) (mA) (A) (mA) (V)
0.1 0.1 0.8 1.05 0 0 5V
0.5 x 16
=8
15
SKEE 1063 (ANSWER)
If vX = vY = 0.1 V, Thus,
v1 = vX + VDIOD = 0.1 V + 0.7 V = 0.8 V
I1 = (VCC v1) / R1 = (5 0.8) /4 = 1.05 mA 1
Since diodes D1 and D2 and output transistor Q1 are not conducting, thus, the currents
I2 = IB = IC = 0 and the output of vO = 5V = logic 1.
1
*********************************
If vX = 0.1 V and vY = 5V or vX = 5V and vY = 0.1 V, then the output transistor still
cut off and vO = 5V = logic 1
1
*******************************