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BTS 5215L

Smart High-Side Power Switch


Two Channels: 2 x 90m
Status Feedback
Product Summary Package

Operating Voltage Vbb 5.5...40V P-DSO-12


Active channels one two parallel
On-state Resistance RON 90m 45m
Nominal load current IL(NOM) 3.7A 7.4A
Current limitation IL(SCr) 12A 12A

General Description
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and

diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions

Applications
C compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits

Basic Functions
Very low standby current
CMOS compatible input
Improved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground

Protection Functions Block Diagram


Short circuit protection
Overload protection Vbb
Current limitation
Thermal shutdown IN1
Overvoltage protection (including load dump) with external ST1
Logic
Channel 1
resistor IN2 Channel 2
Load 1
Reverse battery protection with external resistor ST2
Loss of ground and loss of Vbb protection
Load 2
Electrostatic discharge protection (ESD)

Diagnostic Function GND


Diagnostic feedback with open drain output
Open load detection in OFF-state
Feedback of thermal shutdown in ON-state

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BTS 5215L

Functional diagram

GND gate current limit VBB


control
+
internal charge
logic pump clamp for
voltage supply inductive load
OUT1
IN1 temperature reverse
sensor battery
ST1 ESD
protection
Open load
detection

channel 1

IN2
control and protection circuit
ST2 equivalent to
channel 1
OUT2

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BTS 5215L

Pin Definitions and Functions Pin configuration


Pin Symbol Function
(top view)
1 GND Ground of chip
1
2 IN1 Input 1,2 activates channel 1,2 in case of logic
GND 12 Vbb
4 IN2 high signal
IN1 2 11 NC
3 ST1 Diagnostic feedback 1 & 2 of channel 1,2 Vbb*
ST1 3 10 OUT1
5 ST2 open drain, low on failure
IN2 4 9 NC
6,12, Vbb Positive power supply voltage. Design the
ST2 5 8 OUT2
heat wiring for the simultaneous max. short circuit
slug currents from channel 1 to 2 and also for low Vbb 6 7 NC
thermal resistance * heat slug
7,9,11 NC Not Connected
8 OUT2 Output 1,2 protected high-side power output
10 OUT1 of channel 1 and 2. Design the wiring for the
max. short circuit current

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BTS 5215L

Maximum Ratings at Tj = 25C unless otherwise specified


Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 6) Vbb 43 V
Supply voltage for full short circuit protection Vbb 36 V
Tj,start = -40 ...+150C
Load current (Short-circuit current, see page 6) IL self-limited A
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V VLoad dump3) 60 V
RI2) = 2 , td = 400 ms; IN = low or high,
each channel loaded with RL = 13.5 ,
Operating temperature range Tj -40 ...+150 C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC)4) Ta = 25C: Ptot 3.1 W
(all channels active) Ta = 85C: 1.6
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150C4), see diagrams on page 10
IL = 3.5 A, EAS = 178 mJ, 0 one channel: ZL 21.3 mH
IL = 7.0 A, EAS = 337 mJ, 0 two parallel channels: 10
Electrostatic discharge capability (ESD) IN: VESD 1.0 kV
(Human Body Model) ST: 4.0
out to all other pins shorted: 8.0
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5k; C=100pF
Input voltage (DC) see internal circuit diagram page 9 VIN -10 ... +16 V
Current through input pin (DC) IIN 0.3 mA
Pulsed current through input pin5) IINp 5.0
Current through status pin (DC) IST 5.0

1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended.
2) RI = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
5) only for testing
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BTS 5215L
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance
junction - Case6) each channel: RthjC -- -- 5 K/W
junction ambient6) Rthja -- -- --
@ 6 cm2 cooling area one channel active: -- 45 --
all channels active: -- 40 --

Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics


On-state resistance (Vbb to OUT); IL = 2 A
each channel, Tj = 25C: RON -- 70 90 m
Tj = 150C: -- 140 180
two parallel channels, Tj = 25C: -- 35 45
see diagram, page 11
Nominal load current one channel active: IL(NOM) 3.7 4.7 -- A
two parallel channels active: 7.4 9.5
Device on PCB6), Ta = 85C, Tj 150C
Output current while GND disconnected or pulled up7); IL(GNDhigh) -- -- 2 mA
Vbb = 32 V, VIN = 0,
see diagram page 9
Turn-on time8) IN to 90% VOUT: ton -- 100 250 s
Turn-off time IN to 10% VOUT: toff -- 100 270
RL = 12
Slew rate on 8) 10 to 30% VOUT, RL = 12 : dV/dton 0.2 -- 1.0 V/s
Slew rate off 8) 70 to 40% VOUT, RL = 12 : -dV/dtoff 0.2 -- 1.1 V/s

6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
7) not subject to production test, specified by design
8) See timing diagram on page 12.
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BTS 5215L

Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150C, Vbb = 12 V unless otherwise specified min typ max
Operating Parameters
Operating voltage Vbb(on) 5.5 -- 40 V
Undervoltage switch off9) Tj =-40C...25C: Vbb(u so) -- -- 4.5 V
Tj =125C: -- -- 4.510)
Overvoltage protection11) Vbb(AZ) 41 47 52 V
I bb = 40 mA
Standby current12) Tj =-40C...25C: Ibb(off) -- 4.5 10 A
VIN = 0; see diagram page 11 Tj =150C: -- -- 15
Tj =125C: -- -- 1010)
Off-State output current (included in Ibb(off)) IL(off) -- 1 5 A
VIN = 0; each channel
Operating current 13), VIN = 5V,
one channel on: IGND -- 0.6 1.2 mA
all channels on: -- 1.2 2.4
Protection Functions14)
Current limit, Vout = 0V, (see timing diagrams, page 12)
Tj =-40C: IL(lim) -- -- 23 A
Tj =25C: -- 15
Tj =+150C: 9 -- ----
Repetitive short circuit current limit,
Tj = Tjt each channel IL(SCr) -- 12 -- A
two channels -- 12 --
(see timing diagrams, page 12)
Initial short circuit shutdown time Tj,start =25C: toff(SC) -- 2 -- ms
Vout = 0V (see timing diagrams on page 12)
Output clamp (inductive load switch off)15) VON(CL) 41 47 52 V
at VON(CL) = Vbb - VOUT, IL= 40 mA
Thermal overload trip temperature Tjt 150 -- -- C
Thermal hysteresis Tjt -- 10 -- K

9) is the voltage, where the device doesnt change its switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)
10) not subject to production test, specified by design
11) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram on page 9.
12) Measured with load; for the whole device; all channels off
13) Add IST, if IST > 0
14 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
15) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
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BTS 5215L

Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150C, Vbb = 12 V unless otherwise specified min typ max

Reverse Battery
Reverse battery voltage 16) -Vbb -- -- 32 V
Drain-source diode voltage (Vout > Vbb) -VON -- 600 -- mV
IL = - 2.0 A, Tj = +150C

Diagnostic Characteristics
Open load detection voltage V OUT(OL) 1 1.7 2.8 4.0 V

Input and Status Feedback17)


Input resistance RI 2.5 4.0 6.0 k
(see circuit page 9)
Input turn-on threshold voltage VIN(T+) -- -- 2.5 V
Input turn-off threshold voltage VIN(T-) 1.0 -- -- V
Input threshold hysteresis VIN(T) -- 0.2 -- V
Status change after positive input slope18) td(STon) -- 10 20 s
with open load
Status change after positive input slope18) td(STon) 30 -- -- s
with overload
Status change after negative input slope td(SToff) -- -- 500 s
with open load
Status change after negative input slope18) td(SToff) -- -- 20 s
with overtemperature
Off state input current VIN = 0.4 V: IIN(off) 5 -- 20 A
On state input current VIN = 5 V: IIN(on) 10 35 60 A
Status output (open drain)
Zener limit voltage IST = +1.6 mA: VST(high) 5.4 -- -- V
ST low voltage IST = +1.6 mA: VST(low) -- -- 0.6

16) Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 9).
17) If ground resistors R
GND are used, add the voltage drop across these resistors.
18) not subject to production test, specified by design

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BTS 5215L

Truth Table
( each channel )
IN OUT ST
Normal operation L L H
H H H
Open load L Z L19)
H H H
Overtemperature L L H
H L L

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal valid after the time delay shown in the timing diagrams

Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel (see truth
table). If switching channel 1 to 2 in parallel, the status outputs ST1 and ST2 have to be configured as a 'Wired
OR' function with a single pull-up resistor.

Terms
Ibb
12,6 V
Leadframe ON1
V V
bb I IN1 ON2
Vbb
2 I L1
IN1 10
I IN2 OUT1
4 PROFET
IN2 I L2
I ST1 3 8
ST1 OUT2
VIN1 V IN2 I ST2 5
ST2 GND
V
V OUT1
ST1 V ST2 1
I V
GND OUT2
R
GND

Leadframe (Vbb) is connected to pin 6,12


External RGND optional; single resistor RGND = 150 for reverse battery protection up to the max.
operating voltage.

19) L, if potential at the Output exceeds the OpenLoad detection voltage

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BTS 5215L

Input circuit (ESD protection), IN1 or IN2 Overvolt. and reverse batt. protection
+ 5V
+ Vbb
R
I R ST
IN V
Z2
RI
IN
ESD-ZD I
I Logic
I

GND R ST ST OUT

V
Z1

The use of ESD zener diodes as voltage clamp at DC GND


R Load
conditions is not recommended. R GND

Signal GND Load GND

Status output, ST1 or ST2


VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 ,
+5V RST= 15 k, RI= 3.5 k typ.
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
R ST(ON)
ST active

Open-load detection, OUT1 or OUT2


ESD-
ZD OFF-state diagnostic condition:
GND
Open Load, if VOUT > 3 V typ.; IN low
ESD-Zener diode: 6.1 V typ., max 0.3 mA; RST(ON) < 375
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
V
DC conditions is not recommended. bb

R
EXT
Inductive and overvoltage output clamp, OFF
OUT1 or OUT2
V
OUT
+Vbb

VZ Logic Open load


unit detection

V ON
Signal GND
OUT

GND disconnect

Power GND

VON clamped to VON(CL) = 47 V typ.


Vbb
IN

PROFET OUT

ST
GND
V V V V
bb IN ST GND

Any kind of load. In case of IN = high is VOUT VIN - VIN(T+).


Due to VGND > 0, no VST = low signal available.

Infineon Technologies AG 9 2003-Oct-01


BTS 5215L

GND disconnect with GND pull up Inductive load switch-off energy


dissipation
E bb

Vbb E AS
IN

ELoad
PROFET OUT
Vbb
IN
ST
GND
PROFET OUT
= L
ST

{
EL
V V V GND
V IN ST GND
bb ZL

ER
R
Any kind of load. If VGND > VIN - VIN(T+) device stays off L
Due to VGND > 0, no VST = low signal available.
Energy stored in load inductance:
2
Vbb disconnect with energized inductive EL = 1/2LI L
load While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)iL(t) dt,
high Vbb
IN
with an approximate solution for RL > 0 :
PROFET OUT IL L ILRL
EAS= (V + |VOUT(CL)|)
2RL bb
ln (1+ |V )
ST OUT(CL)|
GND

Maximum allowable load inductance for


a single switch off (one channel)4)
V
bb L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0

For inductive load currents up to the limits defined by ZL ZL [mH]


(max. ratings and diagram on page 10) each switch is 1000
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.

100

10

1
1 2 3 4 5 6

IL [A]

Infineon Technologies AG 10 2003-Oct-01


BTS 5215L
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high

RON [mOhm]

Tj = 150C
160

120

80 25C

-40C
40

0
5 7 9 11 30 40
Vbb [V]

Typ. standby current


Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low

Ibb(off) [A]
45

40

35

30

25

20

15

10

0
-50 0 50 100 150 200

Tj [C]

Infineon Technologies AG 11 2003-Oct-01


BTS 5215L

Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 to
channel 4

Figure 2b: Switching a lamp:


Figure 1a: Vbb turn on:
IN1
IN
IN2

V bb ST

V
OUT1
V
OUT

V
OUT2

ST1 open drain I


L

ST2 open drain


t
t

Figure 3a: Turn on into short circuit:


Figure 2a: Switching a resistive load, shut down by overtemperature, restart by cooling
turn-on/off time and slew rate definition:
IN1 other channel: norm al operation
IN

VOUT I
L1

90% I
L(lim)
t on dV/dtoff
I
L(SCr)

dV/dton t
off
10%
t
off(SC)
ST
IL
t

Heating up of the chip may require several milliseconds, depending


t on external conditions

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BTS 5215L
Figure 3b: Turn on into short circuit: Figure 5a: Open load: detection in OFF-state, turn
shut down by overtemperature, restart by cooling on/off to open load
(two parallel switched channels 1 and 2) Open load of channel 1; other channels normal
operation
IN1/2
IN1

I +I
L1 L2 VOUT1
2xIL(lim)

I L1
I
L(SCr)

ST
t
off(SC)
ST1/2
10s 500s

ST1 and ST2 have to be configured as a 'Wired OR' function


ST1/2 with a single pull-up resistor.
Figure 6a: Status change after, turn on/off to
overtemperature
Figure 4a: Overtemperature: Overtemperature of channel 1; other channels normal
Reset if Tj <Tjt operation

IN1
IN

ST
ST

30s 20s

V
OUT

T
J

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BTS 5215L

Package and Ordering Code


Standard: P-DSO-12-2 Published by
Infineon Technologies AG,
Sales Code BTS 5215L St.-Martin-Strasse 53,
Ordering Code Q67060-S7023 D-81669 Mnchen
Infineon Technologies AG 2001
All Rights Reserved.
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-0.035
2)

Attention please!
0 +0.1

5 3
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C
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components and shall not be considered as a guarantee of
5 1 = 5
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12 7 limited to warranties of non-infringement, regarding circuits,


(1.8)

descriptions and charts stated herein.


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Infineon Technologies is an approved CECC manufacturer.


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Does not include plastic or metal protrusion of 0.15 max. per side For further information on technology, delivery terms and
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conditions and prices please contact your nearest Infineon
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Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Printed circuit board (FR4, 1.5mm thick, one layer
Office.
70m, 6cm2 active heatsink area) as a reference for
max. power dissipation Ptot, nominal load current Infineon Technologies Components may only be used in life-
IL(NOM) and thermal resistance Rthja support devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-
support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.

Infineon Technologies AG 14 2003-Oct-01