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IRF640N
IRF640NS
IRF640NL
l Advanced Process Technology HEXFET Power MOSFET
l Dynamic dv/dt Rating
l 175C Operating Temperature D
l Fast Switching
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling RDS(on) = 0.15
G
l Simple Drive Requirements
Description ID = 18A
Fifth Generation HEXFET Power MOSFETs from S
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
72
(Body Diode) p-n junction diode. S
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 1.0
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62
RJA Junction-to-Ambient (PCB mount) 40
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IRF640N/S/L
100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
10 5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
10
4.5V
1
4.5V
0.1
3.5
RDS(on) , Drain-to-Source On Resistance
100 ID = 18A
I D , Drain-to-Source Current (A)
3.0
TJ = 175 C
2.5
10
(Normalized)
2.0
TJ = 25 C 1.5
1
1.0
0.5
V DS = 50V
20s PULSE WIDTH VGS = 10V
0.1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C)
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IRF640N/S/L
2500 20
VGS = 0V, f = 1 MHZ ID = 11A V DS= 160V
Ciss = Cgs + Cgd, Cds SHORTED
1500 12
Ciss
1000 8
Coss
500 4
Crss
0 0
0 20 40 60 80
1 10 100 1000
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)
TJ = 175 C 100
10 10us
100us
10
TJ = 25 C
1ms
1
10ms
1
TC = 25 C
TJ = 175 C
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)
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IRF640N/S/L
RD
20 VDS
20
VGS
D.U.T.
16 RG
+
16 V DD
ID , Drain Current (A)
-
ID , Drain Current (A)
10V
12
12 Pulse Width 1 s
Duty Factor 0.1 %
VDS
4 90%
4
0
0 25 50 75 100 125 150 175
25 50
TC 75
, Case100 125
Temperature (150
C) 175 10%
TC , Case Temperature ( C) VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
10
Thermal Response(Z thJC )
D = 0.50
0.20
PDM
0.10
0.1
0.05 t1
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IRF640N/S/L
600
RG D .U .T +
- VD D 300
IA S A
20V
tp 0 .0 1
200
Fig 12a. Unclamped Inductive Test Circuit
100
V (B R )D S S
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
IAS
50K
12V .2F
QG .3F
10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRF640N/S/L
+
- +
-
RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple 5% ISD
E X A M P L E : TH IS IS A N IR F 1 0 1 0
W ITH A S S E M B L Y A
L O T C O D E 9 B 1M IN T E R N A T IO N A L PART NUMBER
R E C TIF IE R
IR F 1 0 10
LOGO 9 24 6
9B 1M D A TE C O D E
ASSEMBLY
(Y Y W W )
LOT CODE
YY = YEAR
W W = W EEK
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IRF640N/S/L
8.89 (.350)
1.40 (.055) 1 .39 (.055) REF.
3X
1.14 (.045) 0.93 (.037) 0.55 (.022) 1 .14 (.045)
3X 0.46 (.018)
0.69 (.027)
5.08 (.200 ) 0.25 (.010) M B A M M IN IM U M R E C O M M E N D E D F O O TP R IN T
N O TE S : LE A D A S S IG N M E N TS 8.89 (.350)
1 D IM E N S IO N S A F T E R S O LD E R D IP . 1 - G A TE
2 - D R A IN 17.78 (.700)
2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
3 - SOURCE
3 C O N T R O LLIN G D IM E N S IO N : IN C H .
4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
3.81 (.150)
2.54 (.100)
2.08 (.082) 2X
2X
A
IN TE R N A T IO N A L PART NUMBER
R E C TIF IE R
F530S
LOGO
9246
9B 1M D A TE C O D E
(Y Y W W )
ASSEMBLY
YY = YEAR
LOT CODE
W W = W EEK
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IRF640N/S/L
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IRF640N/S/L
D2Pak Tape & Reel Information
TRR
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1.6 0 (.06 3 )
4 .1 0 (.1 6 1 ) 1.5 0 (.05 9 )
3 .9 0 (.1 5 3 ) 0.3 68 (.014 5 )
0.3 42 (.013 5 )
F E E D D IR E C T IO N
30.40 (1.197)
NOTES : M AX.
1. C O M F O R M S T O EIA -418. 26.40 (1.03 9) 4
2. C O N T R O LLIN G D IM EN S IO N : M ILLIM ET E R . 24.40 (.961 )
3. D IM E N S IO N M E A S U R E D @ H U B .
3
Notes: 4. IN C LU D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E .
Repetitive rating; pulse width limited by Pulse width 400s; duty cycle 2%.
max. junction temperature.
This is only applied to TO-220AB package
Starting TJ = 25C, L = 4.2mH
RG = 25, IAS = 11A.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD 11A, di/dt 344A/s, VDD V(BR)DSS,
TJ 175C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
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This datasheet has been download from:
www.datasheetcatalog.com