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PD - 94006

IRF640N
IRF640NS
IRF640NL
l Advanced Process Technology HEXFET Power MOSFET
l Dynamic dv/dt Rating
l 175C Operating Temperature D
l Fast Switching
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling RDS(on) = 0.15
G
l Simple Drive Requirements
Description ID = 18A
Fifth Generation HEXFET Power MOSFETs from S
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.

The TO-220 package is universally preferred for all


commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the TO-220AB D2Pak TO-262
highest power capability and the lowest possible on- IRF640N IRF640NS IRF640NL
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for low-
profile application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V 18
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 13 A
IDM Pulsed Drain Current 72
PD @TC = 25C Power Dissipation 150 W
Linear Derating Factor 1.0 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 247 mJ
IAR Avalanche Current 18 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 8.1 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
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10/09/00
IRF640N/S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.25 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.15 VGS = 10V, ID = 11A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 6.8 S VDS = 50V, ID = 11A
25 VDS = 200V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 160V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 67 ID = 11A
Qgs Gate-to-Source Charge 11 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge 33 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 10 VDD = 100V
tr Rise Time 19 ID = 11A
ns
td(off) Turn-Off Delay Time 23 RG = 2.5
tf Fall Time 5.5 RD = 9.0, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 7.5
and center of die contact S

Ciss Input Capacitance 1160 VGS = 0V


Coss Output Capacitance 185 VDS = 25V
Crss Reverse Transfer Capacitance 53 pF = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics


Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
18
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

72
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 11A, VGS = 0V


trr Reverse Recovery Time 167 251 ns TJ = 25C, IF = 11A
Qrr Reverse Recovery Charge 929 1394 nC di/dt = 100A/s
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 1.0
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62
RJA Junction-to-Ambient (PCB mount) 40

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IRF640N/S/L
100 100
VGS VGS
TOP 15V TOP 15V

I D , Drain-to-Source Current (A)


I D , Drain-to-Source Current (A)

10V 10V
8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
10 5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
10

4.5V
1
4.5V

0.1

20s PULSE WIDTH 20s PULSE WIDTH


TJ = 25 C TJ = 175C
0.01 0.1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

3.5
RDS(on) , Drain-to-Source On Resistance

100 ID = 18A
I D , Drain-to-Source Current (A)

3.0
TJ = 175 C

2.5
10
(Normalized)

2.0

TJ = 25 C 1.5

1
1.0

0.5
V DS = 50V
20s PULSE WIDTH VGS = 10V
0.1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance


Vs. Temperature

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IRF640N/S/L
2500 20
VGS = 0V, f = 1 MHZ ID = 11A V DS= 160V
Ciss = Cgs + Cgd, Cds SHORTED

VGS , Gate-to-Source Voltage (V)


V DS= 100V
Crss = Cgd V DS= 40V
2000 16
Coss = Cds + Cgd
C, Capacitance(pF)

1500 12
Ciss

1000 8

Coss
500 4
Crss

0 0
0 20 40 60 80
1 10 100 1000
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.


Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

ID , Drain Current (A)

TJ = 175 C 100
10 10us

100us
10
TJ = 25 C
1ms
1
10ms
1

TC = 25 C
TJ = 175 C
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area


Forward Voltage

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IRF640N/S/L
RD
20 VDS
20
VGS
D.U.T.
16 RG
+
16 V DD
ID , Drain Current (A)

-
ID , Drain Current (A)

10V
12
12 Pulse Width 1 s
Duty Factor 0.1 %

8 Fig 10a. Switching Time Test Circuit


8

VDS
4 90%
4

0
0 25 50 75 100 125 150 175
25 50
TC 75
, Case100 125
Temperature (150
C) 175 10%
TC , Case Temperature ( C) VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
10
Thermal Response(Z thJC )

D = 0.50

0.20
PDM
0.10
0.1
0.05 t1

0.02 SINGLE PULSE t2


0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF640N/S/L

600

EAS , Single Pulse Avalanche Energy (mJ)


15V
ID
TOP 4.4A
500 7.6A
BOTTOM 11A
L D R IV E R
VDS
400

RG D .U .T +
- VD D 300
IA S A
20V
tp 0 .0 1
200
Fig 12a. Unclamped Inductive Test Circuit
100
V (B R )D S S
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy


Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms


Current Regulator
Same Type as D.U.T.

50K

12V .2F
QG .3F

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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IRF640N/S/L

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations


D.U.T
Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-


RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive


P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET Power MOSFETs


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IRF640N/S/L

TO-220AB Package Outline


Dimensions are shown in millimeters (inches)

10.5 4 (.4 15 ) 3 .78 (.14 9 ) -B-


2 .87 (.11 3 ) 10.2 9 (.4 05 ) 3 .54 (.13 9 ) 4 .69 (.1 85 )
2 .62 (.10 3 ) 4 .20 (.1 65 )
-A - 1 .3 2 (.05 2 )
1 .2 2 (.04 8 )
6.4 7 (.255 )
6.1 0 (.240 )
4
15 .24 (.6 00 )
14 .84 (.5 84 )
1.1 5 (.0 45) L E A D A S S IG N M E NT S
M IN 1 - G A TE
1 2 3 2 - D R A IN
3 - SOURCE
4 - D R A IN
14 .09 (.5 55 )
13 .47 (.5 30 ) 4 .0 6 (.16 0 )
3 .5 5 (.14 0 )

0 .93 (.03 7 ) 0.5 5 (.0 22)


3X 3X
0 .69 (.02 7 ) 0.4 6 (.0 18)
1.4 0 (.0 55 )
3X
1.1 5 (.0 45 ) 0 .3 6 (.0 1 4) M B A M
2 .92 (.11 5 )
2 .64 (.10 4 )
2 .5 4 (.1 00)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A NC ING P E R A N S I Y 14 .5 M , 1 982 . 3 O UTL IN E C O NF O R M S TO J E DE C O UT L IN E TO -22 0 A B .
2 C O N TR O L LING D IM E N S IO N : INC H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

TO-220AB Part Marking Information

E X A M P L E : TH IS IS A N IR F 1 0 1 0
W ITH A S S E M B L Y A
L O T C O D E 9 B 1M IN T E R N A T IO N A L PART NUMBER
R E C TIF IE R
IR F 1 0 10
LOGO 9 24 6
9B 1M D A TE C O D E
ASSEMBLY
(Y Y W W )
LOT CODE
YY = YEAR
W W = W EEK

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IRF640N/S/L

D2Pak Package Outline

10.54 (.415) -B- 10.16 (.400)


10.29 (.405) 4.69 (.185) REF.
1.40 (.055) 4.20 (.165)
-A- 1.32 (.052)
M A X. 1.22 (.048)
2
6.47 (.255)
6.18 (.243)

1.78 (.070) 15.49 (.610) 2.79 (.110)


1.27 (.050) 1 3 14.73 (.580) 2.29 (.090)

5.28 (.208) 2.61 (.103)


4.78 (.188) 2.32 (.091)

8.89 (.350)
1.40 (.055) 1 .39 (.055) REF.
3X
1.14 (.045) 0.93 (.037) 0.55 (.022) 1 .14 (.045)
3X 0.46 (.018)
0.69 (.027)
5.08 (.200 ) 0.25 (.010) M B A M M IN IM U M R E C O M M E N D E D F O O TP R IN T

11.43 (.4 50)

N O TE S : LE A D A S S IG N M E N TS 8.89 (.350)
1 D IM E N S IO N S A F T E R S O LD E R D IP . 1 - G A TE
2 - D R A IN 17.78 (.700)
2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
3 - SOURCE
3 C O N T R O LLIN G D IM E N S IO N : IN C H .
4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
3.81 (.150)

2.54 (.100)
2.08 (.082) 2X
2X

D2Pak Part Marking Information

A
IN TE R N A T IO N A L PART NUMBER
R E C TIF IE R
F530S
LOGO
9246
9B 1M D A TE C O D E
(Y Y W W )
ASSEMBLY
YY = YEAR
LOT CODE
W W = W EEK
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IRF640N/S/L

TO-262 Package Outline

TO-262 Part Marking Information

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IRF640N/S/L
D2Pak Tape & Reel Information
TRR

1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1.6 0 (.06 3 )
4 .1 0 (.1 6 1 ) 1.5 0 (.05 9 )
3 .9 0 (.1 5 3 ) 0.3 68 (.014 5 )
0.3 42 (.013 5 )

F E E D D IR E C T IO N 1 .8 5 (.0 7 3 ) 1 1.60 (.4 57 )


1 .6 5 (.0 6 5 ) 1 1.40 (.4 49 ) 2 4.30 (.95 7)
1 5.42 (.6 09 )
2 3.90 (.94 1)
1 5.22 (.6 01 )
TR L
1.75 (.069 )
10.90 (.42 9) 1.25 (.049 )
10.70 (.42 1) 4.7 2 (.1 36 )
16 .1 0 (.63 4 ) 4.5 2 (.1 78 )
15 .9 0 (.62 6 )

F E E D D IR E C T IO N

13.50 (.532) 27.40 (1.079)


12.80 (.504) 23.90 (.941)

33 0.00 60.00 (2.362)


(14.173) M IN .
M A X.

30.40 (1.197)
NOTES : M AX.
1. C O M F O R M S T O EIA -418. 26.40 (1.03 9) 4
2. C O N T R O LLIN G D IM EN S IO N : M ILLIM ET E R . 24.40 (.961 )
3. D IM E N S IO N M E A S U R E D @ H U B .
3
Notes: 4. IN C LU D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E .

Repetitive rating; pulse width limited by Pulse width 400s; duty cycle 2%.
max. junction temperature.
This is only applied to TO-220AB package
Starting TJ = 25C, L = 4.2mH
RG = 25, IAS = 11A.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD 11A, di/dt 344A/s, VDD V(BR)DSS,
TJ 175C

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
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