DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ448
SWITCHING
P-CHANNEL POWER MOS FET

DESCRIPTION ORDERING INFORMATION

The 2SJ448 is P-channel MOS Field Effect Transistor designed
PART NUMBER PACKAGE
for high voltage switching applications.
2SJ448 Isolated TO-220

FEATURES (Isolated TO-220)

250 V rating high withstand voltage
Low on-state resistance:
RDS(on) = 2.0 MAX. (VGS = 10 V, ID = 2.0 A)
Low input capacitance:
Ciss = 470 pF TYP.
Narrow gate cut-off voltage width:
VGS(off) = 5.5 to 4.0 V
Built-in gate protection diode
Full-mold package for easy mounting

ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Drain to Source Voltage (VGS = 0 V) VDSS 250 V
Gate to Source Voltage (VDS = 0 V) VGSS m 30 V
Drain Current (DC) (TC = 25C) ID(DC) m 4.0 A
Note1
Drain Current (pulse) ID(pulse) m 16 A
Total Power Dissipation (TC = 25C) PT1 30 W
Total Power Dissipation (TA = 25C) PT2 2.0 W
Channel Temperature Tch 150 C
Storage Temperature Tstg 55 to +150 C
Note2
Single Avalanche Current IAS 4.0 A
Note2
Single Avalanche Energy EAS 80 mJ

Notes 1. PW 10 s, Duty cycle 1%

2. Starting Tch = 25C, VDD = 125 V, RG = 25 , VGS = 20 0 V

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D10029EJ2V0DS00 (2nd edition)

Date Published July 2001 NS CP(K)
The mark shows major revised points. 1995
Printed in Japan
 2SJ448

ELECTRICAL CHARACTERISTICS (TA = 25C)

Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit

Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V 100 A
Gate Leakage Current IGSS VGS = m 25 V, VDS = 0 V m 10 A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 4.0 4.8 5.5 V
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 2.0 A 1.0 2.3 S
Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 2.0 A 1.5 2.0
Input Capacitance Ciss VDS = 10 V 470 pF

Output Capacitance Coss VGS = 0 V 200 pF

Reverse Transfer Capacitance Crss f = 1 MHz 70 pF

Turn-on Delay Time td(on) VDD = 125 V, ID = 2.0 A 13 ns

Rise Time tr VGS = 10 V 7 ns

Turn-off Delay Time td(off) RG = 10 34 ns

Fall Time tf 10 ns

Total Gate Charge QG VDD= 200 V 15 nC

Gate to Source Charge QGS VGS = 10 V 4 nC

Gate to Drain Charge QGD ID = 4.0 A 9 nC

Body Diode Forward Voltage VF(S-D) IF = 4.0 A, VGS = 0 V 1.0 V

Reverse Recovery Time trr IF = 4.0 A, VGS = 0 V 195 ns

Reverse Recovery Charge Qrr di/dt = 50 A / s 760 nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME

D.U.T. D.U.T.
RL
VGS VGS() 90%
RG = 25 L
Wave 0 10%
VGS
RG Form
PG. 50 VDD PG. RG = 10 VDD
ID() 90%
VGS = 20 0 V 90%
ID
VGS ID 10% 10%
IAS BVDSS Wave 0
0
VDS Form td (on) tr td (off) tf
ID
VDD ton toff
= 1 s
Duty Cycle 1%
Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA RL

PG.
50
VDD

2 Data Sheet D10029EJ2V0DS

 2SJ448

TYPICAL CHARACTERISTICS (TA = 25C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
35
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

100 30

25
80
20
60
15
40
10

20 5

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

TC - Case Temperature - C TC - Case Temperature - C

FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE
100

10
ID(pulse) VGS= 20 V
ID - Drain Current - A

ID - Drain Current - A

PW 10 V
10 d =
ite 10
n)
Lim ID(DC) 0
(o 1 s

S
RD m
Po 10 s 5
we m
rd s
1.0 iss DC
ip
at
io
n
Li
m
itt
TC = 25C ed Pulsed
Single Pulse 0 5 10 15 20
0.1
1 10 100 1000 VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

100
Pulsed
ID - Drain Current - A

10
TA = 25C
25C
75C
1.0 125C

0.1

VDS = 10 V
0 5 10 15
VGS - Gate to Source Voltage - V

Data Sheet D10029EJ2V0DS 3

 2SJ448

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

rth(t) - Transient Thermal Resistance - C/W

Rth(ch-A) = 62.5C/W
100

10

Rth(ch-C) = 4.17C/W
1

0.1

0.01
Single Pulse
0.001
10 100 1m 10 m 100 m 1 10 100 1000

PW - Pulse Width - s

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS(on) - Drain to Source On-state Resistance -
DRAIN CURRENT GATE TO SOURCE VOLTAGE
100 3.0
Pulsed
|yfs| - Forward Transfer Admittance - S

VDS = 10 V
Pulsed
ID = 4.0 A
2.0 A
0.8 A
10 TA = 25C 2.0
25C
75C
125C

1.0 1.0

0.1
0.1 1.0 10 100 0 5 10 15
ID - Drain Current - A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUT-OFF VOLTAGE vs.

RDS(on) - Drain to Source On-state Resistance -

RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE

VGS(off) - Gate to Source Cut-off Voltage - V

6.0 Pulsed VDS = 10 V

8.0 ID = 1 mA

4.0 6.0

4.0
VGS = 10 V
2.0
2.0

0 0
0.1 1.0 10 50 0 50 100 150
ID - Drain Current - A Tch - Channel Temperature - C
4 Data Sheet D10029EJ2V0DS
 2SJ448

RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. SOURCE TO DRAIN DIODE
CHANNEL TEMPERATURE FORWARD VOLTAGE

Pulsed
4.0

ISD - Diode Forward Current - A

100

3.0
10

2.0 VGS = 10 V VGS = 0 V

10 V
1

1.0
0.1
ID = 2.0 A
0
50 0 50 100 150 0 0.5 1.0 1.5
Tch - Channel Temperature - C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE SWITCHING CHARACTERISTICS
1000 VGS = 0 V 1000

td(on), tr, td(off), tf - Switching Time - ns

Ciss f = 1 MHz
Ciss, Coss, Crss - Capacitance - pF

tr

100 100
Coss
tf
td(off)
Crss td(on)
10 10

VDD = 125 V
VGS = 10 V
1.0 1.0 RG = 10
1.0 10 100 1000 0.1 1.0 10 100
VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10000 200 16
di/dt = 50 A/ s
ID = 4.0 A
VGS = 0 V
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns

VGS - Gate to Source Voltage - V

VDD= 200 V 12
125 V
1000 50 V

100 8

100
4

10 0
0.1 1.0 10 100 0 4 8 12 16
ID - Drain Current - A QG - Gate Charge - nC

Data Sheet D10029EJ2V0DS 5

 2SJ448

SINGLE AVALANCHE CURRENT vs. SINGLE AVALANCHE ENERGY

INDUCTIVE LOAD DERATING FACTOR
100 160
VDD = 125 V
RG = 25
IAS - Single Avalanche Current - A

140
VGS = 20 0 V

Energy Derating Factor - %

IAS 4 A
120
10
100
ID = 4.0 A
EAS 80
=8
0m
J
60
1.0
40
VDD = 125 V
20
VGS = 20 0 V
0.1 RG = 25 0
100 1m 10 m 100 m 25 50 75 100 125 150
L - Inductive Load - H Starting Tch - Starting Channel Temperature - C

6 Data Sheet D10029EJ2V0DS

 2SJ448

PACKAGE DRAWING (Unit: mm)

Isolated TO-220(MP-45F)

10.0 0.3 4.5 0.2

3.2 0.2
2.7 0.2
EQUIVALENT CIRCUIT

Drain
15.0 0.3

3 0.1

12.0 0.2
Body
Gate Diode
4 0.2

Gate
13.5MIN.

Protection Source
Diode

0.7 0.1 1.3 0.2 2.5 0.1

1.5 0.2 0.65 0.1
2.54 2.54

1.Gate
2.Drain
3.Source
1 2 3

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.

Data Sheet D10029EJ2V0DS 7

 2SJ448

The information in this document is current as of July, 2001. The information is subject to change
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M8E 00. 4
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