Literature Review

2.1 Working Principle of MOSFET:

The aim of the MOSTFET is to be able to control the voltage and current flow between
the source and drain. It works almost as a switch. The working of MOSFET depends upon the
MOS capacitor. The MOS capacitor is the main part of MOSFET. The semiconductor surface
at the below oxide layer which is located between source and drain terminal. It can be inverted
from p-type to n-type by applying a positive or negative gate voltages respectively. When we
apply the positive gate voltage the holes present under the oxide layer with a repulsive force
and holes are pushed downward with the substrate. The depletion region populated by the
bound negative charges which are associated with the acceptor atoms. The electrons reach
channel is formed. The positive voltage also attracts electrons from the n+ source and drain
regions into the channel. Now, if a voltage is applied between the drain and source, the current
flows freely between the source and drain and the gate voltage controls the electrons in the
channel. Instead of positive voltage if we apply negative voltage, a hole channel will be formed
under the oxide layer as in Fig 1(a) [1].

Fig.1 (a) MOSFET Block Diagram

2.2 Working Principle of ISFET:

P. Bergveld was introduced the idea of (ISFET) in 1970 [2].Principle of ISFET is a

modification of MOSFET by replacing gate with a complex gate that interact with a
solution, as in Fig. 2(a).The Hydrogen ion (H+) that contain in solution will binding to
the passive layer of ISFET, this will be describe as site-binding theory [3,4]. Fig. 2(b)
illustrates the difference cross-section structure between the MOSFET and ISFET
[5].

Fig.2 (a) Basic structure of ISFET

Fig.2 (b) Difference structure between MOSFET and ISFET

2.3 Drift reading of ISFET:

Given that ideal Nernstian response of 59 mV/pH at room temperature, an accuracy of

0.002 pH/h requires a maximum tolerable drift rate of (59 mV/pH) (0.002 pH/h) = 0.12mV/h.
The typical drift rate in an inorganic-gate pH ISFET is on the order of several millivolts per
hour during the initial several hours following exposure of the insulator surface to an aqueous
solution of pH 7. The long-term drift rate, on the other hand, is on the order of several tenths
of a millivolt per hour following an exposure period of approximately 1216 h [6]. The high
accuracy desired for continuous monitoring of blood pH, in particular, imposes stringent
requirements on the tolerable drift rate in pH ISFETs. Continuous monitoring of blood pH
during surgery, for example, requires an accuracy of 0.02 pH unit over a period of 10 h (i.e.,
an average stability of 0.002 pH/h), without the need for calibration [7].