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The aim of the MOSTFET is to be able to control the voltage and current flow between
the source and drain. It works almost as a switch. The working of MOSFET depends upon the
MOS capacitor. The MOS capacitor is the main part of MOSFET. The semiconductor surface
at the below oxide layer which is located between source and drain terminal. It can be inverted
from p-type to n-type by applying a positive or negative gate voltages respectively. When we
apply the positive gate voltage the holes present under the oxide layer with a repulsive force
and holes are pushed downward with the substrate. The depletion region populated by the
bound negative charges which are associated with the acceptor atoms. The electrons reach
channel is formed. The positive voltage also attracts electrons from the n+ source and drain
regions into the channel. Now, if a voltage is applied between the drain and source, the current
flows freely between the source and drain and the gate voltage controls the electrons in the
channel. Instead of positive voltage if we apply negative voltage, a hole channel will be formed
under the oxide layer as in Fig 1(a) [1].