You are on page 1of 11

PD - 91509C

IRF3415S/L
HEXFET Power MOSFET
l Advanced Process Technology D
l Surface Mount (IRF3415S) VDSS = 150V
l Low-profile through-hole (IRF3415L)
l 175C Operating Temperature RDS(on) = 0.042
l Fast Switching G
l Fully Avalanche Rated ID = 43A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on- D 2 P ak T O -26 2
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3415L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V 43
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 30 A
IDM Pulsed Drain Current 150
PD @TA = 25C Power Dissipation 3.8 W
PD @TC = 25C Power Dissipation 200 W
Linear Derating Factor 1.3 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 590 mJ
IAR Avalanche Current 22 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 0.75
C/W
RJA Junction-to-Ambient ( PCB Mounted,steady-state)** 40

5/13/98
IRF3415S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.17 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.042 VGS = 10V, ID = 22A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 19 S VDS = 50V, ID = 22A
25 VDS = 150V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 120V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 V GS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 200 ID = 22A
Qgs Gate-to-Source Charge 17 nC VDS = 120V
Qgd Gate-to-Drain ("Miller") Charge 98 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 12 VDD = 75V
tr Rise Time 55 ID = 22A
ns
td(off) Turn-Off Delay Time 71 RG = 2.5
tf Fall Time 69 RD = 3.3, See Fig. 10
Between lead,
LS Internal Source Inductance 7.5 nH
and center of die contact
Ciss Input Capacitance 2400 VGS = 0V
Coss Output Capacitance 640 pF VDS = 25V
Crss Reverse Transfer Capacitance 340 = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics


Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
43
(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse G

150
(Body Diode) p-n junction diode. S

V SD Diode Forward Voltage 1.3 V TJ = 25C, IS = 22A, VGS = 0V


trr Reverse Recovery Time 260 390 ns TJ = 25C, IF = 22A
Q rr Reverse Recovery Charge 2.2 3.3 C di/dt = 100A/s
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%.
max. junction temperature. ( See fig. 11 )
Starting TJ = 25C, L = 2.4mH Uses IRF3415 data and test conditions
RG = 25, IAS = 22A. (See Figure 12)
ISD 22A, di/dt 820A/s, VDD V(BR)DSS,
TJ 175C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
IRF3415S/L

1000 1000 VGS


VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V

I D , Drain-to-Source Current (A)


7.0V
I D , Drain-to-Source Current (A)

7.0V
6.0V 6.0V
5.5V 5.5V
5.5V 5.5V
5.0V
BOTTOM 4.5V BOTTOM 4.5V
5.0V

100 100

4.5V
4.5V

20us PULSE WIDTH 20us PULSE WIDTH


TJ = 25 oC TJ = 175 o C
10 10
1 10 100 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
ID = 37A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

2.5

2.0
(Normalized)

TJ = 25 C
100 1.5
TJ = 175 C

1.0

0.5

V DS = 50V
VGS = 10V
20s PULSE WIDTH 0.0
10
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( oC)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance


Vs. Temperature
IRF3415S/L

6000 20
VGS = 0V, f = 1MHz ID = 22A
Ciss = Cgs + Cgd , Cds SHORTED VDS = 120V
Crss = Cgd VDS = 75V

VGS , Gate-to-Source Voltage (V)


5000 Coss = Cds + Cgd 16 VDS = 30V
C, Capacitance (pF)

4000
12
Ciss
3000

8
2000 Coss

Crss 4
1000
FOR TEST CIRCUIT
SEE FIGURE 13
0 0
1 10 100 0 40 80 120 160 200
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.


Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

100
I D , Drain Current (A)

100 10us
TJ = 175 o C

10 100us

TJ = 25 o C 10
1ms
1

TC = 25 o C 10ms
TJ = 175 o C
V GS = 0 V Single Pulse
0.1 1
0.2 0.6 1.0 1.4 1.8 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area


Forward Voltage
IRF3415S/L

RD
50 VDS

VGS
D.U.T.
40 RG
+
-V DD
I D , Drain Current (A)

30 10V
Pulse Width 1 s
Duty Factor 0.1 %

20
Fig 10a. Switching Time Test Circuit

10 VDS
90%

0
25 50 75 100 125 150 175
TC , Case Temperature ( C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

P DM
0.05
t1
0.02 t2
SINGLE PULSE
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case


IRF3415S/L

1400
ID

EAS , Single Pulse Avalanche Energy (mJ)


TOP 9.0A
1200 16A
1 5V BOTTOM 22A
1000

L D R IV E R
VDS 800

RG D .U .T 600
+
V
- DD
IA S A
20V 400
tp 0 .0 1

200
Fig 12a. Unclamped Inductive Test Circuit
0
25 50 75 100 125 150 175
Starting T J, Junction Temperature ( oC)
V (B R )D SS
tp

Fig 12c. Maximum Avalanche Energy


Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms Current Regulator


Same Type as D.U.T.

50K
QG 12V .2F
.3F
10 V
+
QGS QGD V
D.U.T. - DS

VG VGS

3mA

Charge IG ID
Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
IRF3415S/L
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations


D.U.T
Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-


RG dv/dt controlled by RG +
Driver same type as D.U.T. V DD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive


P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS


IRF3415S/L
D2Pak Package Outline

1 0.54 (.4 15) -B - 1 0.16 (.4 00 )


1 0.29 (.4 05) 4.69 (.1 85) RE F.
1.4 0 (.055 ) 4.20 (.1 65)
-A- 1.3 2 (.05 2)
M AX. 1.2 2 (.04 8)
2
6.47 (.2 55 )
6.18 (.2 43 )

1.7 8 (.07 0) 15 .4 9 (.6 10) 2.7 9 (.110 )


1.2 7 (.05 0) 1 3 14 .7 3 (.5 80) 2.2 9 (.090 )

5 .28 (.20 8) 2.61 (.1 03 )


4 .78 (.18 8) 2.32 (.0 91 )

8.8 9 (.3 50 )
1.40 (.0 55) 1.3 9 (.0 5 5) R E F.
3X
1.14 (.0 45) 0 .93 (.03 7 ) 0.5 5 (.022 ) 1.1 4 (.0 4 5)
3X 0.4 6 (.018 )
0 .69 (.02 7 )
5 .08 (.20 0) 0 .25 (.01 0 ) M B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T

1 1.43 (.4 50 )

NO TE S: LE A D A SS IG N M E N TS 8.89 (.3 50 )
1 D IM EN S IO N S A FTER SO L D ER D IP. 1 - G A TE
2 - D R AIN 17 .78 (.70 0)
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 - S O U RC E
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
3 .8 1 (.15 0)

2.5 4 (.100 )
2 .08 (.08 2) 2X
2X

Part Marking Information


D2Pak

A
IN TE R N A TIO N A L PART NUM BER
R E C T IF IE R
F530S
LO G O
9 24 6
9B 1M DATE CODE
(Y YW W )
A S S E M B LY
YY = Y E A R
LO T C O D E
W W = W EEK
IRF3415S/L
Package Outline
TO-262 Outline

Part Marking Information


TO-262
IRF3415S/L
Tape & Reel Information
D2Pak

TR R

1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .60 (.06 3)
4 .1 0 (.1 6 1 ) 1 .50 (.05 9)
3 .9 0 (.1 5 3 ) 0 .3 68 (.0 1 4 5 )
0 .3 42 (.0 1 3 5 )

F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 1 .6 0 (.4 5 7 )


1 .6 5 (.0 6 5 ) 1 1 .4 0 (.4 4 9 ) 2 4 .3 0 (.9 5 7 )
1 5 .4 2 (.6 0 9 )
2 3 .9 0 (.9 4 1 )
1 5 .2 2 (.6 0 1 )
TR L
1 .75 (.06 9 )
10 .9 0 (.42 9) 1 .25 (.04 9 )
10 .7 0 (.42 1) 4 .7 2 (.1 3 6)
16 .10 (.63 4 ) 4 .5 2 (.1 7 8)
15 .90 (.62 6 )

F E E D D IRE C TIO N

13.50 (.532 ) 2 7.4 0 (1.079)


12.80 (.504 ) 2 3.9 0 (.9 41)

33 0.00 60.00 (2.3 62)


(1 4.1 73) MIN .
MA X.

3 0.40 (1.1 97)


NO TES : MAX.
1. C O M F O R M S TO E IA -4 18. 26 .40 (1.03 9) 4
2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 24 .40 (.961 )
3. D IM E N S IO N ME A S U R E D @ H U B .
3
4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/

You might also like