Ordering number:ENN779D

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1209/2SC2911
160V/140mA High-Voltage Switching
and AF 100W Predriver Applications

Features Package Dimensions

Adoption of FBET process. unit:mm
High breakdown voltage. 2009B
Good linearity of hFE and small Cob.
[2SA1209/2SC2911]
Fast switching speed. 8.0
4.0 2.7

11.0
3.0

7.0
1.5
1.6

3.0
0.8
0.8
0.6
0.5

15.5
1 2 3
1 : Emitter

1.2
( ) : 2SA1209 2 : Collector
2.4 3 : Base
4.8
Specifications SANYO : TO-126

Absolute Maximum Ratings at Ta = 25C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO ()180 V
Collector-to-Emitter Voltage VCEO ()160 V
Emitter-to-Base Voltage VEBO ()5 V
Collector Current IC ()140 mA
Collector Current (Pulse) ICP ()200 mA
1 W
Collector Dissipation PC
Tc=25C 10 W
Junction Temperature Tj 150 C
Storage Temperature Tstg 55 to +150 C

Electrical Characteristics at Ta = 25C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=()80V, IE=0 ()0.1 A
Emitter Cutoff Current IEBO VEB=()4V, IC=0 ()0.1 A
DC Current Gain hFE VCE=()5V, IC=()10mA 100* 400*
Gain-Bandwidth Product fT VCE=()10V, IC=()10mA 150 MHz
Output Capacitance Cob VCB=()10V, f=1MHz (4.0)3.0 pF
*: The 2SA1209/2SC2911 are classified by 10mA hFE as follows : Continued on next page.
Rank R S T
hFE 100 to 200 140 to 280 200 to 400

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircrafts
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/5
 2SA1209/2SC2911
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
0.07 0.3
Collector-to-Emitter Saturation Voltage VCE(sat) IC=()50mA, IB=()5mA V
(0.14) (0.4)
Turn-ON Time ton See specified Test Circuit 0.1 s
Fall Time tf See specified Test Circuit 0.1 s
Storage Time tstg See specified Test Circuit 1.5 s

Switching Test Circuit

IB1
OUT
IN 3k IB2

RB
2k
5k
50
+ +

1F 1F

--2V 20V
IC=10IB1=--10IB2=10mA
(For PNP, the polarity is reversed.)

IC -- VCE IC -- VCE
--140 140
2SA1209 2SC2911
mA
mA

--120 120
0.5
A
0.6

.6m
--0 mA
Collector Current, IC mA

Collector Current, IC mA

--0.5 0.4m
A 0.4mA
--100 -- 100

A 0.3mA
--80 --0.3m 80

--60 --0.2mA 60 0.2mA

--40 40
--0.1mA 0.1mA
--20 20

IB=0 IB=0
0 0
0 --10 --20 --30 --40 --50 --60 --70 0 10 20 30 40 50 60 70
Collector-to-Emitter Voltage, VCE V ITR03021 Collector-to-Emitter Voltage, VCE V ITR03022
IC -- VBE IC -- VBE
--140 140
2SA1209 2SC2911
--120 120
Collector Current, IC mA

Collector Current, IC mA

--100 100

--80 80

--60 60

--40 40

--20 20

0 0
0 --0.2 --0.4 --0.6 --0.8 --1.0 0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE V ITR03023 Base-to-Emitter Voltage, VBE V ITR03024

No.779-2/5
 2SA1209/2SC2911
hFE -- IC hFE -- IC
1000 1000
2SA1209 2SC2911
7 7
Common Emitter DC Current Gain, hFE

Common Emitter DC Current Gain, hFE

VCE=--5V VCE=5V
5 5

3 3

2 2

100 100
7 7

5 5

3 3

2 2

10 10
5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2
Collector Current, IC mA ITR03025 Collector Current, IC mA ITR03026
fT -- IC fT -- IC
3 3
2SA1209 2SC2911
Gain-Bandwidth Product, fT MHz

Gain-Bandwidth Product, fT MHz

2 VCE=--10V 2 VCE=10V

100 100

7 7

5 5

3 3

2 2

10 10
--1.0 2 3 5 7 --10 2 3 5 7 --100 2 1.0 2 3 5 7 10 2 3 5 7 100 2
Collector Current, IC mA ITR03027 Collector Current, IC mA ITR03028
Cob -- VCB Cob -- VCB
100 100
2SA1209 2SC2911
7 7
f=1MHz f=1MHz
5 5
Output Capacitance, Cob pF

Output Capacitance, Cob pF

3 3

2 2

10 10
7 7
5 5

3 3

2 2

1.0 1.0
--1.0 2 3 5 7 --10 2 3 5 7 --100 1.0 2 3 5 7 10 2 3 5 7 100
Collector-to-Base Voltage, VCB -- V ITR03029 Collector-to-Base Voltage, VCB -- V ITR03030
VCE(sat) -- IC VCE(sat) -- IC
2 1.0
2SA1209 2SC2911
7
IC / IB=10 IC / IB=10
--1.0
Saturation Voltage, VCE (sat) V

Saturation Voltage, VCE (sat) V

5
7
5 3

3 2
Collector-to-Emitter

Collector-to-Emitter

0.1
--0.1
7
7
5
5

3 3

2 2
5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2
Collector Current, IC mA ITR03031 Collector Current, IC mA ITR03032

No.779-3/5
 2SA1209/2SC2911
VBE(sat) -- IC VBE(sat) -- IC
--10 10
2SA1209 2SC2911
7 IC / IB=10 7 IC / IB=10
Saturation Voltage, VBE (sat) V

Saturation Voltage, VBE (sat) V

5 5

3 3

2 2
Base-to-Emitter

Base-to-Emitter
--1.0 1.0

7 7

5 5

3 3
5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2
Collector Current, IC mA ITR03033 Collector Current, IC mA ITR03034
ASO PC -- Ta
5 1.2
2SA1209 / 2SC2911
3
ICP=200mA
2 1.0

Collector Dissipation, PC W
Collector Current, IC mA

1m

100 IC=140mA
s
1s

7 0.8
DC No
5
op he
era at
3 tio 0.6 sin
n k
2

0.4
10
7
5 2SA1209 / 2SC2911 0.2

3
DC Single pulse
(For PNP, minus sign is omitted.)
2 0
2 3 5 7 10 2 3 5 7 100 2 3 5 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE V ITR03035 Ambient Temperature, Ta C ITR03036
PC -- Tc
12
2SA1209 / 2SC2911

10
Collector Dissipation, PC W

0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc C ITR03037

No.779-4/5
 2SA1209/2SC2911

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.

PS No.779-5/5