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IRFIB6N60A, SiHFIB6N60A

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Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY Low gate charge Qg results in simple drive
VDS (V) 600 requirement Available
RDS(on) () VGS = 10 V 0.75 Improved gate, avalanche and dynamic dV/dt
Qg max. (nC) 49 ruggedness Available

Qgs (nC) 13 Fully characterized capacitance and avalanche


voltage and current
Qgd (nC) 20
Material categorization: for definitions of compliance
Configuration Single please see www.vishay.com/doc?99912
D Note
TO-220 FULLPAK * This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.

G APPLICATIONS
Switch mode power supply (SMPS)
Uninterruptible power supply
S High speed power switching
G D S High voltage isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)
N-Channel MOSFET

TYPICAL SMPS TOPOLOGIES


Single transistor forward
Active clamped forward

ORDERING INFORMATION
Package TO-220 FULLPAK
IRFIB6N60APbF
Lead (Pb)-free
SiHFIB6N60A-E3
IRFIB6N60A
SnPb
SiHFIB6N60A

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)


PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 600
V
Gate-Source Voltage VGS 30
TC = 25 C 5.5
Continuous Drain Current VGS at 10 V ID
TC = 100 C 3.5
Pulsed Drain Current a IDM 37
Linear Derating Factor 0.48 W/C
Single Pulse Avalanche Energy b EAS 290 mJ
Repetitive Avalanche Current a IAR 9.2 A
Repetitive Avalanche Energy a EAR 6.0 mJ
Maximum Power Dissipation TC = 25 C PD 60 W
Peak Diode Recovery dV/dt c dV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150
d
C
Soldering Recommendations (Peak temperature) for 10 s 300
10 lbf in
Mounting Torque 6-32 or M3 screw
1.1 Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 C, L = 6.8 mH, RG = 25 , IAS = 9.2 A (see fig. 12).
c. ISD 9.2 A, dI/dt 50 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.

S16-0763-Rev. D, 02-May-16 1 Document Number: 91175


For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix

THERMAL RESISTANCE RATINGS


PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 65
C/W
Maximum Junction-to-Case (Drain) RthJC - 2.1

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 A 600 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = 1 mA d - 660 - mV/C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = 30 V - - 100 nA
VDS = 600 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS A
VDS = 480 V, VGS = 0 V, TJ = 125 C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 3.3 A b - - 0.75
Forward Transconductance gfs VDS = 25 V, ID = 5.5 A 5.5 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 1400 -
Output Capacitance Coss VDS = 25 V, - 180 -
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 7.1 -
pF
VDS = 1.0 V, f = 1.0 MHz - 1957 -
Output Capacitance Coss
VGS = 0 V VDS = 480 V, f = 1.0 MHz - 49 -
Effective Output Capacitance Coss eff. VDS = 0 V to 480 Vc - 96 -
Total Gate Charge Qg - - 49
ID = 9.2 A, VDS = 400 V,
Gate-Source Charge Qgs VGS = 10 V - - 13 nC
see fig. 6 and 13 b
Gate-Drain Charge Qgd - - 20
Turn-On Delay Time td(on) - 13 -
Rise Time tr VDD = 300 V, ID = 9.2 A, - 25 -
RG = 9.1, RD = 35.5, ns
Turn-Off Delay Time td(off) see fig. 10 b - 30 -
Fall Time tf - 22 -
Gate Input Resistance Rg f = 1 MHz, open drain 0.5 - 3.2
Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS MOSFET symbol D


- - 5.5
showing the A
a
integral reverse G

Pulsed Diode Forward Current ISM p - n junction diode S - - 37

Body Diode Voltage VSD TJ = 25 C, IS = 9.2 A, VGS = 0 V b - - 1.5 V


Body Diode Reverse Recovery Time trr - 530 800 ns
TJ = 25 C, IF = 9.2 A, dI/dt = 100 A/s b
Body Diode Reverse Recovery Charge Qrr - 3.0 4.4 C
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
d. t = 60 s, f = 60 Hz.

S16-0763-Rev. D, 02-May-16 2 Document Number: 91175


For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

100 100
VGS
TOP 15V
10V
8.0V
I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)


7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V TJ = 150 C
10 10

TJ = 25 C

1 1

4.7V

20s PULSE WIDTH V DS = 50V


TJ = 25 C 20s PULSE WIDTH
0.1 0.1
0.1 1 10 100 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VDS , Drain-to-Source Voltage (V) VGS , Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

100 3.0
VGS ID = 9.2A
RDS(on) , Drain-to-Source On Resistance

TOP 15V
10V
I D , Drain-to-Source Current (A)

8.0V
7.0V 2.5
6.0V
5.5V
5.0V
BOTTOM 4.7V
2.0
(Normalized)

10 1.5

1.0

4.7V 0.5
20s PULSE WIDTH
TJ = 150 C VGS = 10V
1 0.0
1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160
VDS , Drain-to-Source Voltage (V) TJ , Junction Temperature ( C)
Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature

S16-0763-Rev. D, 02-May-16 3 Document Number: 91175


For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix

2400 100
V GS = 0V, f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd

ISD , Reverse Drain Current (A)


2000 C oss = C ds + C gd

iss
C, Capacitance (pF)

1600 10
oss
TJ = 150 C
1200

800 1
TJ = 25 C
rss
400

V GS = 0 V
0 A 0.1
1 10 100 1000 0.2 0.5 0.7 1.0 1.2
VDS , Drain-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 1000
ID = 9.2A
OPERATION IN THIS AREA LIMITED
VDS = 480V BY RDS(on)
VGS , Gate-to-Source Voltage (V)

16 VDS = 300V
VDS = 120V 100
I D , Drain Current (A)

12 10us

10
100us
8
1ms
1
4 10ms
TC = 25 C
FOR TEST CIRCUIT TJ = 150 C
SEE FIGURE 13 Single Pulse
0 0.1
0 10 20 30 40 50 10 100 1000 10000
QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

S16-0763-Rev. D, 02-May-16 4 Document Number: 91175


For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix

RD
VDS
6.0
VGS
D.U.T.
RG
5.0 +
- VDD
ID , Drain Current (A)

4.0 10 V
Pulse width 1 s
Duty factor 0.1 %
3.0
Fig. 10a - Switching Time Test Circuit
2.0
VDS
90 %
1.0

0.0
25 50 75 100 125 150
10 %
TC , Case Temperature ( C)
VGS
t d(on) tr t d(off) t f
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms

10
Thermal Response (Z thJC )

D = 0.50
1

0.20

0.10
P DM
0.05
0.1
t1
0.02
t2
0.01
SINGLE PULSE Notes:
(THERMAL RESPONSE) 1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S16-0763-Rev. D, 02-May-16 5 Document Number: 91175


For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix

V DS

15 V tp

L Driver
VDS

RG D.U.T. +
- VDD
A
IAS A
20 V
tp 0.01 I AS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

600
ID
EAS , Single Pulse Avalanche Energy (mJ)

TOP 4.1A
500 5.8A
BOTTOM 9.2A

400

300

200

100

0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 k

12 V 0.2 F
10 V 0.3 F

QGS Q GD +
VDS
D.U.T. -

VG VGS

3 mA

Charge IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

S16-0763-Rev. D, 02-May-16 6 Document Number: 91175


For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations


D.U.T.
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-

- +
-

Rg dV/dt controlled by Rg +
Driver same type as D.U.T. VDD
-
ISD controlled by duty factor D
D.U.T. - device under test

Driver gate drive


Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91175.

S16-0763-Rev. D, 02-May-16 7 Document Number: 91175


For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17 1 Document Number: 91000

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