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Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 C 32
TC = 100 C 20
Pulsed drain current, tp limited by Tjmax I D puls 96
Avalanche energy, single pulse EAS 1100 mJ
I D = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR 1
I D = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR 20 A
Gate source voltage VGS 20 V
Gate source voltage AC (f >1Hz) VGS 30
Power dissipation, T C = 25C Ptot 284 W
Operating and storage temperature T j , T stg -55... +150 C
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 50 V/ns
V DS = 400 V, ID = 32 A, Tj = 125 C
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 0.44 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
Soldering temperature, Tsold - - 260 C
1.6 mm (0.063 in.) from case for 10s
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
3C
o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.
Tj E xternal H eatsink
R th1 R th,n T case
P tot (t)
T am b
A
W
240 10 1
Ptot
ID
200
160 10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
120
tp = 1 ms
DC
80 10 -1
40
0 10 -2 0 1 2 3
0 20 40 60 80 100 120 C 160 10 10 10 V 10
TC VDS
10 -1
Vgs = 7V
100
ZthJC
ID
Vgs = 6V
80
10 -2
D = 0.5 60
Vgs = 5.5V
D = 0.2
D = 0.1
D = 0.05 40
10 -3 D = 0.02 Vgs = 5V
D = 0.01
single pulse 20
Vgs = 4.5V
-4
10 -7 -6 -5 -4 -3 -1 0
10 10 10 10 10 s 10 0 5 10 15 V 25
tp VDS
Vgs = 20V
Vgs = 6V
1.6 Vgs = 5.5V
A Vgs = 4V
Vgs = 4.5VVgs = 5V
RDS(on)
Vgs = 5.5V 1.4
ID
1.2
40 Vgs = 5V 1
0.8
0.6
Vgs = 4.5V
20
0.4
Vgs = 4V Vgs = 20
0.2
0 0
0 5 10 15 V 25 0 10 20 30 40 50 60 ID 80
VDS ID
0.5
120 Tj = 25C
RDS(on)
0.45
100
ID
0.4
0.35 Tj =150C
80
0.3
0.25 60
0.2
40
0.15 98%
0.1 typ
20
0.05
0 0
-60 -20 20 60 100 C 180 0 1 2 3 4 5 6 7 8 V 10
Tj VGS
V
A
12
10 1
VGS
IF
0.8 VDS max
6
10 0
Tj = 25 C typ
4
Tj = 150 C typ
Tj = 25 C (98%)
2 Tj = 150 C (98%)
0 10 -1
0 40 80 120 160 200 nC 260 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD
mJ
A
EAS
0.8
IAR
Tj(START)=25C
10 0.6
0.4
5 Tj(START)=125C
0.2
0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 s 10 20 40 60 80 100 120 C 160
tAR Tj
W
570
V(BR)DSS
560
PAR
550
540 600
530
520
510 400
500
490
480 200
470
460
450 0 4 5 6
-60 -20 20 60 100 C 180 10 10 Hz 10
Tj f
10 4 18
Ciss
16
Eoss
14
10 3
C
12
Coss
10
2
10
8
Crss 6
1
10
4
2
0
10 0
0 100 200 300 V 500 0 100 200 300 V 500
VDS VDS
P-TO-247-3-1
15.9
6.35 5.03
3.61 2.03
4.37
20
5.94
6.17
9.91
20.9
D 7 5
2.97 x 0.127
41.22
1.75
D
16
1.14
0.243
1.2 0.762 MAX.
2 2.4 +0.05
2.92
5.46
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.
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