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SPW32N50C3

Cool MOS Power Transistor VDS @ Tjmax 560 V


Feature RDS(on) 0.11
New revolutionary high voltage technology ID 32 A
Ultra low gate charge
Periodic avalanche rated P-TO247

Extreme dv/dt rated


Ultra low effective capacitances
Improved transconductance

Type Package Ordering Code Marking


SPW32N50C3 P-TO247 Q67040-S4613 32N50C3

Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 C 32
TC = 100 C 20
Pulsed drain current, tp limited by Tjmax I D puls 96
Avalanche energy, single pulse EAS 1100 mJ
I D = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR 1
I D = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR 20 A
Gate source voltage VGS 20 V
Gate source voltage AC (f >1Hz) VGS 30
Power dissipation, T C = 25C Ptot 284 W
Operating and storage temperature T j , T stg -55... +150 C

Rev. 2.0 Page 1 2004-03-16


SPW32N50C3

Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 50 V/ns
V DS = 400 V, ID = 32 A, Tj = 125 C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 0.44 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
Soldering temperature, Tsold - - 260 C
1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25C unless otherwise specified


Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA 500 - - V
Drain-Source avalanche V(BR)DS V GS=0V, ID=20A - 600 -
breakdown voltage
Gate threshold voltage VGS(th) ID=1800, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current I DSS V DS=500V, VGS=0V, A
Tj=25C, - 0.5 25
Tj=150C - - 250
Gate-source leakage current I GSS V GS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) V GS=10V, ID=20A,
Tj=25C - 0.09 0.11
Tj=150C - 0.27 -
Gate input resistance RG f=1MHz, open Drain - 0.8 -

Rev. 2.0 Page 2 2004-03-16


SPW32N50C3

Electrical Characteristics , at Tj = 25 C, unless otherwise specified


Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance g fs V DS2*I D*RDS(on)max, - 30 - S
ID=20A

Input capacitance Ciss V GS=0V, V DS=25V, - 4200 - pF


Output capacitance Coss f=1MHz - 1700 -
Reverse transfer capacitance Crss - 90 -
Effective output capacitance, 2) Co(er) V GS=0V, - 181 - pF
energy related V DS=0V to 400V

Effective output capacitance, 3) Co(tr) - 350 -


time related
Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 20 - ns
Rise time tr ID=32A, RG=2.7 - 30 -
Turn-off delay time td(off) - 100 -
Fall time tf - 10 -

Gate Charge Characteristics


Gate to source charge Qgs VDD=380V, ID=32A - 15 - nC
Gate to drain charge Qgd - 90 -
Gate charge total Qg VDD=380V, ID=32A, - 170 -
VGS=0 to 10V

Gate plateau voltage V(plateau) VDD=380V, ID=32A - 5 - V

1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
3C
o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.

Rev. 2.0 Page 3 2004-03-16


SPW32N50C3

Electrical Characteristics, at Tj = 25 C, unless otherwise specified


Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25C - - 32 A
forward current
Inverse diode direct current, ISM - - 96
pulsed
Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V
Reverse recovery time trr VR=380V, IF=IS , - 500 - ns
Reverse recovery charge Qrr diF/dt=100A/s - 15 - C
Peak reverse recovery current Irrm - 60 - A
Peak rate of fall of reverse dirr /dt - 1000 - A/s
recovery current

Typical Transient Thermal Characteristics


Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance Thermal capacitance
R th1 0.004367 K/W Cth1 0.0006644 Ws/K
R th2 0.008742 Cth2 0.002479
R th3 0.017 Cth3 0.00336
R th4 0.081 Cth4 0.009048
R th5 0.103 Cth5 0.017
R th6 0.049 Cth6 0.114

Tj E xternal H eatsink
R th1 R th,n T case
P tot (t)

C th1 C th2 C th,n

T am b

Rev. 2.0 Page 4 2004-03-16


SPW32N50C3

1 Power dissipation 2 Safe operating area


Ptot = f (TC) ID = f ( V DS )
parameter : D = 0 , T C=25C
320
SPW32N50C3 10 2

A
W

240 10 1
Ptot

ID
200

160 10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
120
tp = 1 ms
DC
80 10 -1

40

0 10 -2 0 1 2 3
0 20 40 60 80 100 120 C 160 10 10 10 V 10
TC VDS

3 Transient thermal impedance 4 Typ. output characteristic


ZthJC = f (t p) ID = f (VDS); Tj=25C
parameter: D = tp/T parameter: tp = 10 s, VGS
0
10 140

K/W Vgs = 20V


A

10 -1
Vgs = 7V
100
ZthJC

ID

Vgs = 6V
80
10 -2

D = 0.5 60
Vgs = 5.5V
D = 0.2
D = 0.1
D = 0.05 40
10 -3 D = 0.02 Vgs = 5V
D = 0.01
single pulse 20
Vgs = 4.5V
-4
10 -7 -6 -5 -4 -3 -1 0
10 10 10 10 10 s 10 0 5 10 15 V 25
tp VDS

Rev. 2.0 Page 5 2004-03-16


SPW32N50C3

5 Typ. output characteristic 6 Typ. drain-source on resistance


ID = f (VDS); Tj=150C RDS(on)=f(ID)
parameter: tp = 10 s, VGS parameter: Tj=150C, V GS
80 2


Vgs = 20V

Vgs = 6V
1.6 Vgs = 5.5V
A Vgs = 4V
Vgs = 4.5VVgs = 5V

RDS(on)
Vgs = 5.5V 1.4
ID

1.2

40 Vgs = 5V 1

0.8

0.6
Vgs = 4.5V
20
0.4

Vgs = 4V Vgs = 20
0.2

0 0
0 5 10 15 V 25 0 10 20 30 40 50 60 ID 80
VDS ID

7 Drain-source on-state resistance 8 Typ. transfer characteristics


RDS(on) = f (Tj) ID= f ( VGS ); V DS 2 x ID x RDS(on)max
parameter : ID = 20 A, VGS = 10 V parameter: tp = 10 s
SPW32N50C3
0.65 160

A
0.55

0.5
120 Tj = 25C
RDS(on)

0.45

100
ID

0.4

0.35 Tj =150C
80
0.3

0.25 60
0.2
40
0.15 98%

0.1 typ
20
0.05

0 0
-60 -20 20 60 100 C 180 0 1 2 3 4 5 6 7 8 V 10
Tj VGS

Rev. 2.0 Page 6 2004-03-16


SPW32N50C3

9 Typ. gate charge 10 Forward characteristics of body diode


VGS = f (QGate) IF = f (VSD)
parameter: ID = 32 A pulsed parameter: Tj , tp = 10 s
16
SPW32N50C3
10 2 SPW32N50C3

V
A

12

10 1
VGS

0.2 VDS max


10

IF
0.8 VDS max

6
10 0
Tj = 25 C typ
4
Tj = 150 C typ
Tj = 25 C (98%)
2 Tj = 150 C (98%)

0 10 -1
0 40 80 120 160 200 nC 260 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD

11 Avalanche SOA 12 Avalanche energy


IAR = f (tAR) EAS = f (Tj)
par.: Tj 150 C par.: ID = 10 A, VDD = 50 V
20 1.2

mJ
A
EAS

0.8
IAR

Tj(START)=25C

10 0.6

0.4

5 Tj(START)=125C

0.2

0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 s 10 20 40 60 80 100 120 C 160
tAR Tj

Rev. 2.0 Page 7 2004-03-16


SPW32N50C3

13 Drain-source breakdown voltage 14 Avalanche power losses


V(BR)DSS = f (Tj) PAR = f (f )
parameter: E AR=1mJ
SPW32N50C3
600 1000
V

W
570
V(BR)DSS

560

PAR
550
540 600

530
520
510 400

500
490
480 200
470
460
450 0 4 5 6
-60 -20 20 60 100 C 180 10 10 Hz 10
Tj f

15 Typ. capacitances 16 Typ. Coss stored energy


C = f (VDS) Eoss=f(VDS)
parameter: V GS=0V, f=1 MHz
10 5 22
pF J

10 4 18
Ciss
16
Eoss

14
10 3
C

12
Coss
10
2
10
8

Crss 6
1
10
4

2
0
10 0
0 100 200 300 V 500 0 100 200 300 V 500
VDS VDS

Rev. 2.0 Page 8 2004-03-16


SPW32N50C3

Definition of diodes switching characteristics

Rev. 2.0 Page 9 2004-03-16


SPW32N50C3

P-TO-247-3-1
15.9
6.35 5.03
3.61 2.03

4.37

20
5.94
6.17
9.91
20.9

D 7 5

2.97 x 0.127

41.22
1.75

D
16

1.14
0.243
1.2 0.762 MAX.
2 2.4 +0.05
2.92
5.46

General tolerance unless otherwise specified: Leadframe parts: 0.05


Package parts: 0.12

Rev. 2.0 Page 10 2004-03-16


SPW32N50C3

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.

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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

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Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Rev. 2.0 Page 11 2004-03-16

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