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FQP6N90C / FQPF6N90C N-Channel QFET MOSFET

December 2013

FQP6N90C / FQPF6N90C
N-Channel QFET MOSFET
900 V, 6.0 A, 2.3

Description Features
This N-Channel enhancement mode power MOSFET is 6.0 A, 900 V, RDS(on) = 2.3 (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductors proprietary planar ID = 3.0 A
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 30 nC)
resistance, and to provide superior switching performance Low Crss (Typ. 11 pF)
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power 100% Avalanche Tested
factor correction (PFC), and electronic lamp ballasts.

G G
D G
S TO-220 D
S TO-220F

Absolute Maximum Ratings TC = 25C unless otherwise noted.

Symbol Parameter FQP6N90C FQPF6N90C Unit


VDSS Drain-Source Voltage 900 V
ID Drain Current - Continuous (TC = 25C) 6 6* A
- Continuous (TC = 100C) 3.8 3.8 * A
IDM Drain Current - Pulsed (Note 1) 24 24 * A
VGSS Gate-Source Voltage 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 650 mJ
IAR Avalanche Current (Note 1) 6 A
EAR Repetitive Avalanche Energy (Note 1) 16.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25C) 167 56 W
- Derate above 25C 1.43 0.48 W/C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
Maximum lead temperature for soldering,
TL 300 C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol Parameter FQP6N90C FQPF6N90C Unit
RJC Thermal Resistance, Junction-to-Case, Max. 0.75 2.25 C/W
RCS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- C/W
RJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W

2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com


FQP6N90C / FQPF6N90C Rev. C1
FQP6N90C / FQPF6N90C N-Channel QFET MOSFET
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQP6N90C FQP6N90C TO-220 Tube N/A N/A 50 units
FQPF6N90C FQPF6N90C TO-220F Tube N/A N/A 50 units

Electrical Characteristics TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 900 -- -- V
BVDSS Breakdown Voltage Temperature
ID = 250 A, Referenced to 25C -- 1.07 -- V/C
/ TJ Coefficient
IDSS VDS = 900 V, VGS = 0 V -- -- 10 A
Zero Gate Voltage Drain Current
VDS = 720 V, TC = 125C -- -- 100 A
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 3 A -- 1.93 2.3
On-Resistance
gFS Forward Transconductance VDS = 50 V, ID = 3 A -- 5.5 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1360 1770 pF
Coss Output Capacitance f = 1.0 MHz -- 110 145 pF
Crss Reverse Transfer Capacitance -- 11 15 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 35 80 ns
VDD = 450 V, ID = 6 A,
tr Turn-On Rise Time -- 90 190 ns
RG = 25
td(off) Turn-Off Delay Time -- 55 120 ns
(Note 4)
tf Turn-Off Fall Time -- 60 130 ns
Qg Total Gate Charge VDS = 720 V, ID = 6 A, -- 30 40 nC
Qgs Gate-Source Charge VGS = 10 V -- 9.0 -- nC
Qgd Gate-Drain Charge (Note 4) -- 12 -- nC

Drain-Source Diode Characteristics and Maximum Ratings


IS Maximum Continuous Drain-Source Diode Forward Current -- -- 6.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 6 A, -- 630 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/s -- 6.9 -- C

Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 34 mH, IAS = 6 A, VDD = 50 V, RG = 25 , starting TJ = 25C.
3. I SD 6 A, di/dt 200 A/s , VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature.

2006 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com


FQP6N90C / FQPF6N90C Rev. C1
FQP6N90C / FQPF6N90C N-Channel QFET MOSFET
 !    

VGS
Top : 15.0 V
1 10.0 V
10
8.0 V 10
1

7.0 V
6.5 V
6.0 V
Bottom : 5.5 V o
150 C
ID, Drain Current [A]

ID, Drain Current [A]


0
10
o
25 C o
-55 C
0
10

-1
10
Notes :
1. 250 s Pulse Test
2. TC = 25 Notes :
1. VDS = 50V
2. 250 s Pulse Test
-2 -1
10 10
10
-1
10
0
10
1 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

4.5

1
4.0 10
Drain-Source On-Resistance

VGS = 10V
IDR, Reverse Drain Current [A]
3.5
RDS(ON) [ ],

VGS = 20V
3.0
0
10

2.5
150 25

Notes :
2.0
1. VGS = 0V
Note : TJ = 25 2. 250 s Pulse Test

1.5 10
-1

0 3 6 9 12 15 18 0.2 0.4 0.6 0.8 1.0 1.2 1.4


ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage


Drain Current and Gate Voltage Variation with Source Current
and Temperature

2000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 180V
Ciss 10 VDS = 450V
1500
VDS = 720V
VGS, Gate-Source Voltage [V]

8
Capacitance [pF]

Coss
1000 6

Notes :
1. VGS = 0 V 4
2. f = 1 MHz
500
Crss
2
Note : ID = 6A

0 0
10
-1
10
0
10
1 0 5 10 15 20 25 30 35

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2006 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com


FQP6N90C / FQPF6N90C Rev. C1
FQP6N90C / FQPF6N90C N-Channel QFET MOSFET
Typical Characteristics (Continued)

1.2 3.0

2.5
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
RDS(ON) , (Normalized)
BV DSS , (Normalized)

2.0

1.0 1.5

1.0

0.9 Notes :
1. VGS = 0 V Notes :
2. ID = 250 A 0.5 1. VGS = 10 V
2. ID = 3.0 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C]
o TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation


vs Temperature vs Temperature

2 2
10 10
Operation in This Area Operation in This Area
is Limited by R DS(on) 10 s is Limited by R DS(on)
10 s

1 100 s 1 100 s
10 10
1 ms 1 ms
ID, Drain Current [A]
ID, Drain Current [A]

10 ms 10 ms
DC
0 0
10 10
DC

-1 -1
10 Notes : 10 Notes :
o o
1. TC = 25 C 1. TC = 25 C
o o
2. TJ = 150 C 2. TJ = 150 C
3. Single Pulse 3. Single Pulse

-2 -2
10 10
0 1 2 3 0 1 2 3
10 10 10 10 10 10 10 10

VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FQP6N90C for FQPF6N90C

6
ID, Drain Current [A]

0
25 50 75 100 125 150
TC, Case Temperature []

Figure 10. Maximum Drain Current


vs Case Temperature

2006 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com


FQP6N90C / FQPF6N90C Rev. C1
FQP6N90C / FQPF6N90C N-Channel QFET MOSFET
Typical Characteristics (Continued)

0
10

ZJC(t), Thermal Response [oC/W]


D = 0 .5

0 .2
N o te s :
10
-1 1 . Z J C (t) = 0 .7 5 /W M a x .
0 .1 2 . D u t y F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)

0 .0 5
PDM
0 .0 2
0 .0 1 t1
s in g le p u ls e t2
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-1. Transient Thermal Response Curve for FQP6N90C


ZJC(t), Thermal Response [oC/W]

0 D = 0 .5
10

0 .2 N o te s :
1 . Z J C (t) = 2 .3 /W M a x .
0 .1 2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)

-1
0 .0 5
10
0 .0 2 PDM

0 .0 1 t1
t2
s in g le p u ls e
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for FQPF6N90C

2006 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com


FQP6N90C / FQPF6N90C Rev. C1
FQP6N90C / FQPF6N90C N-Channel QFET MOSFET
VGS
Same Type
50K
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
IG = const.
3mA

Charge

Figure 12. Gate Charge Test Circuit & Waveform

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
V
10V
GS
DUT
td(on) tr td(off)
tf
t on t off

Figure 13. Resistive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

V
10V
GS
GS DUT VDD VDS (t)
tp
tp Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

2006 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com


FQP6N90C / FQPF6N90C Rev. C1
FQP6N90C / FQPF6N90C N-Channel QFET MOSFET
DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS dv/dt controlled by RG


ISD controlled by pulse period

Gate Pulse Width


VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current


I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current


VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

2006 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com


FQP6N90C / FQPF6N90C Rev. C1
FQP6N90C / FQPF6N90C N-Channel QFET MOSFET
Mechanical Dimensions

Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB


Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003

2006 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com


FQP6N90C / FQPF6N90C Rev. C1
FQP6N90C / FQPF6N90C N-Channel QFET MOSFET
Mechanical Dimensions

Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

2006 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com


FQP6N90C / FQPF6N90C Rev. C1
FQP6N90C / FQPF6N90C N-Channel QFET MOSFET
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As used here in:
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PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later


Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to


No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild


Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I66

2006 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com


FQP6N90C / FQPF6N90C Rev. C1

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