SPW35N60C3

TM
CoolMOS Power Transistor Product Summary
Features
V DS @ T j,max 650 V
New revolutionary high voltage technology
R DS(on),max 0.1
Ultra low gate charge
ID 34.6 A
Periodic avalanche rated

Extreme dv /dt rated

Ultra low effective capacitances

Improved transconductance PG-TO247

Type Package Ordering Code Marking

SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3

Maximum ratings, at T j=25 C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T C=25 C 34.6 A

T C=100 C 21.9

Pulsed drain current1) I D,pulse T C=25 C 103.8

Avalanche energy, single pulse E AS I D=17.3 A, V DD=50 V 1500 mJ

Avalanche energy, repetitive t AR1),2) E AR I D=34.6 A, V DD=50 V 1.5

Avalanche current, repetitive t AR1) I AR 34.6 A

I D=34.6 A,
Drain source voltage slope dv /dt 50 V/ns
V DS=480 V, T j=125 C

Gate source voltage V GS static 20 V

V GS AC (f >1 Hz) 30

Power dissipation P tot T C=25 C 313 W

Operating and storage temperature T j, T stg -55 ... 150 C

Reverse diode dv/dt 6) dv/dt 15 V/ns

Rev. 2.5 Page 1 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A
 SPW35N60C3

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 0.4 K/W

Thermal resistance, junction -

R thJA leaded - - 62
ambient

1.6 mm (0.063 in.)

Soldering temperature, wavesoldering T sold - - 260 C
from case for 10 s

Electrical characteristics, at T j=25 C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 A 600 - - V

Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=34.6 A - 700 -

Gate threshold voltage V GS(th) V DS=V GS, I D=1.9 mA 2.1 3 3.9

V DS=600 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 1 A
T j=25 C

V DS=600 V, V GS=0 V,
- - 100
T j=150 C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA

V GS=10 V, I D=21.9 A,
Drain-source on-state resistance R DS(on) - 0.081 0.1
T j=25 C

V GS=10 V, I D=21.9 A,
- 0.2 -
T j=150 C

Gate resistance RG f =1 MHz, open drain - 0.6 -

|V DS|>2|I D|R DS(on)max,

Transconductance g fs - 36 - S
I D=21.9 A

Rev. 2.5 Page 2 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW35N60C3

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss - 4500 - pF

V GS=0 V, V DS=25 V,
Output capacitance C oss - 1500 -
f =1 MHz
Reverse transfer capacitance C rss - 100 -

Effective output capacitance, energy

C o(er) - 180 -
related3)
V GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
C o(tr) - 324 -
related4)

Turn-on delay time t d(on) - 10 - ns

Rise time tr V DD=480 V, - 5 -

V GS=10 V, I D=34.6 A,
Turn-off delay time t d(off) R G=3.3 - 70 -

Fall time tf - 10 -

Gate Charge Characteristics

Gate to source charge Q gs - 18 - nC

Gate to drain charge Q gd V DD=480 V, - 70 -

I D=34.6 A,
Gate charge total Qg V GS=0 to 10 V - 150 200

Gate plateau voltage V plateau - 5.3 - V

1)
Pulse width limited by maximum temperature T j,max only
2)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
3)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
4)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
6)
ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.

Rev. 2.5 Page 3 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW35N60C3

Parameter Symbol Conditions Values Unit

min. typ. max.

Reverse Diode

Diode continuous forward current IS - - 34.6 A

T C=25 C
Diode pulse current I S,pulse - - 103.8

V GS=0 V, I F=34.6 A,
Diode forward voltage V SD - 0.95 1.2 V
T j=25 C

Reverse recovery time t rr - 600 - ns

V R=480 V, I F=I S,
Reverse recovery charge Q rr - 21 - C
di F/dt =100 A/s
Peak reverse recovery current I rrm - 90 - A

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

typ. typ.

R th1 0.00441 K/W C th1 0.00037 Ws/K

R th2 0.00608 C th2 0.00223

R th3 0.0341 C th3 0.00315

R th4 0.0602 C th4 0.0179

R th5 0.0884 C th5 0.098

C th6 4.45)

5)
C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
R thCA=0 K/W.

Rev. 2.5 Page 4 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW35N60C3
1 Power dissipation 2 Safe operating area
P tot=f(T C) I D=f(V DS); T C=25 C; D =0
parameter: t p

400 103

limited by on-state
resistance

1 s
300 102
10 s

100 s
P tot [W]

I D [A]
200 101

DC 1 ms

10 ms

100 100

0 10-1
0 40 80 120 160 100 101 102 103
T C [C] V DS [V]

3 Max. transient thermal impedance 4 Typ. output characteristics

I D=f(V DS); T j=25 C I D=f(V DS); T j=25 C
parameter: D=t p/T parameter: V GS

100 100
7V
20 V 6.5 V

0.5 80
6V

10-1
0.2
60
Z thJC [K/W]

0.1
I D [A]

5.5 V

0.05
40
-2 0.02
10
5V
0.01
single pulse

20

4.5 V

4V
10-3 0
10-6 10-5 10-4 10-3 10-2 10-1 100 0 5 10 15 20
t p [s] V DS [V]

Rev. 2.5 Page 5 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW35N60C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 C R DS(on)=f(I D); T j=150 C
parameter: V GS parameter: V GS

60 0.8
20 V
6V

7V 5.5 V
0.7
50
6.5 V
5.5 V
0.6 4V 4.5 V 5V

40
0.5

R DS(on) []
5V
I D [A]

30 0.4

6V
0.3
20 4.5 V

20 V
0.2

10 4V
0.1

0 0
0 5 10 15 20 0 10 20 30 40 50 60
V DS [V] I D [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R DS(on)=f(T j); I D=21.9 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j

0.3 100
25 C

0.25
80

0.2
60
R DS(on) []

150 C
I D [A]

0.15

98 % 40
0.1
typ

20
0.05

0 0
-60 -20 20 60 100 140 180 0 2 4 6 8 10
T j [C] V GS [V]

Rev. 2.5 Page 6 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW35N60C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=34.6 A pulsed I F=f(V SD)
parameter: V DD parameter: T j

12 103

10
25 C 25 C, 98%
102 150 C, 98%

8 120 V
480 V
150 C
V GS [V]

I F [A]
6 101

100

0 10-1
0 50 100 150 200 0 0.5 1 1.5 2 2.5
Q gate [nC] V SD [V]

11 Avalanche SOA 12 Avalanche energy

I AR=f(t AR) E AS=f(T j); I D=17.3 A; V DD=50 V
parameter: T j(start)

40 1600

30 1200
E AS [mJ]
I AV [A]

20 800

125 C 25 C

10 400

0 0
-3 -2 -1 0 1 2 3 20 60 100 140 180
10 10 10 10 10 10 10
t AR [s] T j [C]

Rev. 2.5 Page 7 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW35N60C3
13 Drain-source breakdown voltage 14 Typ. capacitances
V BR(DSS)=f(T j); I D=0.25 mA C =f(V DS); V GS=0 V; f =1 MHz

700 105

660 104
Ciss
V BR(DSS) [V]

C [pF]
620 103

Coss

580 102

Crss

540 101
-60 -20 20 60 100 140 180 0 100 200 300 400 500
T j [C] V DS [V]

15 Typ. C oss stored energy

E oss= f(V DS)

30

25

20
E oss [J]

15

10

0
0 100 200 300 400 500 600
V DS [V]

Rev. 2.5 Page 8 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW35N60C3
Definition of diode switching characteristics

Rev. 2.5 Page 9 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW35N60C3
PG-TO-247-3-1

Rev. 2.5 Page 10 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW35N60C3

Published by
Infineon Technologies AG
81726 Munich, Germany
2008 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any
typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property
rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For
information on the types in question, please contact the nearest Infineon Technologies
Office. Infineon Technologies components may be used in life-support devices or
systems only with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.

Rev. 2.5 Page 11 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 Data sheet erratum
PCN 2009-134-A

New package outlines TO-247

1 New package outlines TO-247

Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)

Figure 1 Outlines TO-247, dimensions in mm/inches

Final Data Sheet Erratum Rev. 2.0, 2010-02-01