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SuperFET TM
FCH47N60 / FCA47N60
600V N-Channel MOSFET
Features Description
650V @TJ = 150C SuperFETTM is, Farichilds proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
Typ. RDS(on) = 0.058
balance mechanism for outstanding low on-resistance and
Ultra Low Gate Charge (typ. Qg = 210nC) lower gate charge performance.
Low Effective Output Capacitance (typ. Cosseff. = 420pF) This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
100% avalanche tested
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
D
!
"
! "
"
G! "
TO-247 TO-3P !
G D
S G DS S
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RJC Thermal Resistance, Junction-to-Case -- 0.3 C/W
RCS Thermal Resistance, Case-to-Sink 0.24 -- C/W
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FCH47N60 / FCA47N60 Rev. A
FCH47N60 / FCA47N60 600V N-Channel MOSFET
Typical Performance Characteristics
VGS
Top : 15.0 V
2 10.0 V
10
8.0 V 2
7.0 V 10
6.0 V
Bottom : 5.5 V
150C
1
10
1
10 25C
-55C
* Notes :
- Note
1. 250 Pulse Test
0 1. VDS = 40V
10 2. TC = 25C
10
0
2. 250s Pulse Test
-1 0 1
10 10 10 2 4 6 8 10
2
0.15 10
VGS = 10V
0.10
1
10
VGS = 20V
150C 25C
0.05
* Notes :
1. VGS = 0V
0
* Note : TJ = 25C 10 2. 250s Pulse Test
0.00
0 20 40 60 80 100 120 140 160 180 200 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD , Source-Drain Voltage [V]
VDS = 400V
20000 8
Capacitance [pF]
Coss
15000 6
* Notes :
1. VGS = 0 V
Ciss
2. f = 1 MHz
10000 4
5000 Crss 2
* Note : ID = 47A
0 0
-1 0 1
10 10 10 0 50 100 150 200 250
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FCH47N60 / FCA47N60 Rev. A
FCH47N60 / FCA47N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Drain-Source On-Resistance
2.5
RDS(ON), (Normalized)
BVDSS, (Normalized)
1.1
2.0
1.0 1.5
1.0
* Notes :
0.9 1. VGS = 0 V
* Notes :
2. ID = 250A 1. VGS = 10 V
0.5
2. ID = 47 A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
TJ, Junction Temperature [C] TJ, Junction Temperature [C]
1
10 10 ms
30
DC
0
10
20
* Notes :
-1
1. TC = 25C
10
2. TJ = 150C 10
3. Single Pulse
-2
10 0
0 1 2 3
10 10 10 10 25 50 75 100 125 150
D = 0 .5
(t), Thermal Response
-1
10 * N o te s :
0 .2 1 . Z J C ( t) = 0 .3 C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C ( t)
0 .1
0 .0 5 PDM
0 .0 2 t1
JC
t2
Z
-2
10
0 .0 1
s in g le p u ls e
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
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FCH47N60 / FCA47N60 Rev. A
FCH47N60 / FCA47N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
50K
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd
DUT
3mA
Charge
RL VDS
VDS 90%
VGS VDD
RG
10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off
L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)
5 www.fairchildsemi.com
FCH47N60 / FCA47N60 Rev. A
FCH47N60 / FCA47N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT +
VDS
I SD
L
Driver
RG
Same Type
as DUT VDD
IRM
VSD VDD
Body Diode
Forward Voltage Drop
6 www.fairchildsemi.com
FCH47N60 / FCA47N60 Rev. A
FCH47N60 / FCA47N60 600V N-Channel MOSFET
Mechanical Dimensions
Dimensions in Millimeters
7 www.fairchildsemi.com
FCH47N60 / FCA47N60 Rev. A
FCH47N60 / FCA47N60 600V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3P
15.60 0.20
4.80 0.20
13.60 0.20
3.80 0.20
3.20 0.10 +0.15
9.60 0.20 1.50 0.05
18.70 0.20
12.76 0.20
19.90 0.20
23.40 0.20
13.90 0.20
2.00 0.20
3.50 0.20
3.00 0.20
16.50 0.30
+0.15
0.60 0.05
5.45TYP 5.45TYP
[5.45 0.30] [5.45 0.30]
Dimensions in Millimeters
8 www.fairchildsemi.com
FCH47N60 / FCA47N60 Rev. A
FCH47N60 / FCA47N60 600V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
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PACMAN Stealth
Across the board. Around the world.
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The Power Franchise
Power247 SuperSOT-3
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 2. A critical component is any component of a life support device
1. Life support devices or systems are devices or systems which, or system whose failure to perform can be reasonably expected
(a) are intended for surgical implant into the body, or (b) support to cause the failure of the life support device or system, or to
or sustain life, or (c) whose failure to perform when properly used affect its safety or effectiveness.
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. I16
9 www.fairchildsemi.com
FCH47N60 / FCA47N60 Rev. A