PolarHVTM HiPerFET IXFB 100N50P VDSS = 500 V

Power MOSFET ID25 = 100 A

RDS(on) 49 m
N-Channel Enhancement Mode trr 200 ns
Avalanche Rated
Fast Intrinsic Diode

Symbol Test Conditions Maximum Ratings PLUS264TM (IXFB)

VDSS TJ = 25 C to 150 C 500 V

VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V

VGSS Continuous 30 V
G (TAB)
VGSM Transient 40 V D
S
ID25 TC = 25 C 100 A
IDRMS External lead current limit 75 A
IDM TC = 25 C, pulse width limited by TJM 250 A G = Gate D = Drain
S = Source TAB = Drain
IAR TC = 25 C 100 A
EAR TC = 25 C 100 mJ
EAS TC = 25 C 5 J
Features
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 20 V/ns
l
TJ 150 C, RG = 2 International standard packages
l
Fast recovery diode
PD TC = 25 C 1250 W l
Unclamped Inductive Switching (UIS)
TJ -55 ... +150 C rated
l
TJM 150 C Low package inductance
Tstg -55 ... +150 C - easy to drive and to protect

TL 1.6 mm (0.062 in.) from case for 10 s 300 C

TSOLD Plastic body for 10 s 260 C Advantages
FC Mounting force 30..120/7.5...2.7 N/lb l
Plus 264TM package for clip or spring
l
Weight 10 g Space savings
l
High power density

Symbol Test Conditions Characteristic Values

(TJ = 25 C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 3 mA 500 V

VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V

IGSS VGS = 30 VDC, VDS = 0 200 nA

IDSS VDS = VDSS 25 A

VGS = 0 V TJ = 125 C 2000 A

RDS(on) VGS = 10 V, ID = 0.5 ID25, Note 1 49 m

2006 IXYS All rights reserved DS99496E(01/06)

 IXFB 100N50P

Symbol Test Conditions Characteristic Values

(TJ = 25 C, unless otherwise specified) PLUS264TM (IXFB) Outline
Min. Typ. Max.

gfs VDS = 20 V; ID = 0.5 ID25, Note 1 50 80 S

Ciss 20 nF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1700 pF
Crss 140 pF

td(on) 36 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 29 ns
td(off) RG = 1 (External) 110 ns
tf 26 ns

Qg(on) 240 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 96 nC
Qgd 78 nC

RthJC 0.10 C/W

RthCS 0.13 C/W

Source-Drain Diode Characteristic Values

(TJ = 25 C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
IS VGS = 0 V 100 A

ISM Repetitive 250 A

VSD IF = IS, VGS = 0 V, Note 1 1.5 V

trr IF = 25A, -di/dt = 100 A/s 200 ns

QRM VR = 100V 0.6 C
IRM 6.0 A

Notes:
1. Pulse test, t 300 s, duty cycle d 2 %

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
 IXFB 100N50P

Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics

@ 25C @ 25C
100 220
V GS = 10V V GS = 10V
90 200
8V 9V
80 180

160
70 8V
7V 140
I D - Amperes

I D - Amperes
60
120
50
100 7V
40
80
30 6V
60
20 40 6V
10 20
5V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 2 4 6 8 10 12 14 16 18 20 22 24 26
V DS - Volts V DS - Volts

Fig. 3. Output Characteristics Fig. 4. R DS(on) Normalized to ID = 50A Value

@ 125C v s. Junction Temperature
100 3.1
V GS = 10V
90 8V 2.8 V GS = 10V
7V
80 2.5
R DS(on) - Normalized

70
2.2
I D - Amperes

60
1.9
I D = 100A
50
6V 1.6
40 I D = 50A
1.3
30
1
20
5V
10 0.7

0 0.4
0 1 2 3 4 5 6 7 8 9 10 11 -50 -25 0 25 50 75 100 125 150
V DS - Volts T J - Degrees Centigrade

Fig. 5. R DS(on) Normalized to ID = 50A Value Fig. 6. Maximum Drain Current v s.

vs. Drain Current Case Temperature
3 90

2.8 V GS = 10V External Lead Current Limit

80
2.6 TJ = 125C
70
2.4
R DS(on) - Normalized

60
2.2
I D - Amperes

2 50

1.8 40

1.6
30
1.4 TJ = 25C
20
1.2

1 10

0.8 0
0 20 40 60 80 100 120 140 160 180 200 220 -50 -25 0 25 50 75 100 125 150
I D - Amperes T J - Degrees Centigrade

2006 IXYS All rights reserved

 IXFB 100N50P

Fig. 7. Input Admittance Fig. 8. Transconductance

160 150

135
140
120
120
105

g f s - Siemens
I D - Amperes

100 TJ = - 40C
TJ = 125C 90
25C
25C 125C
80 - 40C 75

60
60
45
40
30
20
15

0 0
4 4.5 5 5.5 6 6.5 7 7.5 0 20 40 60 80 100 120 140 160 180
V GS - Volts I D - Amperes

Fig. 9. Forward Voltage Drop of

Intrinsic Diode Fig. 10. Gate Charge
300 10

9 V DS = 250V

250 I D = 50A
8
I G = 10mA
7
200
I S - Amperes

V GS - Volts

150 5

4
100
TJ = 125C 3

TJ = 25C 2
50
1

0 0
0.4 0.6 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 200 225 250
V SD - Volts Q G - NanoCoulombs

Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area

100,000 1,000
f = 1 MHz
RDS(on) Limit
C iss
25s
Capacitance - PicoFarads

10,000 100 100s

I D - Amperes

C oss 1ms

10ms
1,000 10
DC

TJ = 150C
C rss
TC = 25C
100 1
0 5 10 15 20 25 30 35 40 10 100 1000
V DS - Volts V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
 IXFB 100N50P

Fig. 13. Maximum Transient Thermal Resistance

1.000

0.100
R (th)JC - C / W

0.010

0.001
0.0001 0.001 0.01 0.1 1 10
Pulse W idth - Seconds

2006 IXYS All rights reserved