SOT23 SILICON EPITAXIAL

BAT54 SERIES BAT54 SERIES

SCHOTTKY BARRIER DIODES
ISSUE 1 SEPTEMBER 1995
1 1 1 1

TYPICAL CHARACTERISTICS 2
1

1 10m
3
100m
1m
+125C
10m
+125C +85C 3 2 3 3 2 2 3
+85C 100
+25C
1m BAT54 BAT54A BAT54S BAT54C Device Type
10 SINGLE COMMON SERIES COMMON Pin Configuration
100 ANODE CATHODE
+25C L4Z L42 L44 L43 Partmarking Detail
10 1
0 0.15 0.3 0.45 0.6 0.75 0.9 0 10 20 30
Forward Voltage VF (V) Reverse Voltage VR (V)
FEATURES: Low VF & High Current Capability
IR v VR Characteristics APPLICATIONS: PSU, Mobile Telecomms & SCSI
IF v VF Characteristics
ABSOLUTE MAXIMUM RATINGS.
15 330 PARAMETER SYMBOL VALUE UNIT

270
Continuous Reverse Voltage VR 30 V

10
Forward Current IF 200 mA
180 Forward Voltage @ IF =10mA VF 400 mV
Repetitive Peak Forward Current I FRM 300 mA
5
90 Non Repetitive Forward Current t<1s I FSM 600 mA
Power Dissipation at Tamb=25C Ptot 330 mW
0 0
0 10 20 30 0 50 100 150 Storage Temperature Range Tstg -55 to +150 C
Reverse Voltage VR (V) TA - Ambient Temperature ( C) JunctionTemperature Tj 125 C
CT v VR Characteristics PD v TA Characteristics
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown V(BR)R 30 50 V IR=10 A
Voltage
Forward Voltage VF 135 240 mV IF=0.1mA
200 320 mV IF=1mA
280 400 mV IF=10mA
350 500 mV IF=30mA
530 1000 mV IF=100mA
Reverse Current IR 2.5 4 A VR=25V
Diode Capacitance CD 7.5 10 pF f=1MHz,VR=1V
Reverse Recover trr 5 ns switched from
Time IF=10mA to IR=10mA
RL=100 , Measured
at IR=1mA
Dual Device; For simultaneous continuous use Tj=100C.
3-5 3-4
 SOT23 SILICON EPITAXIAL
BAT54 SERIES BAT54 SERIES
SCHOTTKY BARRIER DIODES
ISSUE 1 SEPTEMBER 1995
1 1 1 1

TYPICAL CHARACTERISTICS 2
1

1 10m
3
100m
1m
+125C
10m
+125C +85C 3 2 3 3 2 2 3
+85C 100
+25C
1m BAT54 BAT54A BAT54S BAT54C Device Type
10 SINGLE COMMON SERIES COMMON Pin Configuration
100 ANODE CATHODE
+25C L4Z L42 L44 L43 Partmarking Detail
10 1
0 0.15 0.3 0.45 0.6 0.75 0.9 0 10 20 30
Forward Voltage VF (V) Reverse Voltage VR (V)
FEATURES: Low VF & High Current Capability
IR v VR Characteristics APPLICATIONS: PSU, Mobile Telecomms & SCSI
IF v VF Characteristics
ABSOLUTE MAXIMUM RATINGS.
15 330 PARAMETER SYMBOL VALUE UNIT

270
Continuous Reverse Voltage VR 30 V

10
Forward Current IF 200 mA
180 Forward Voltage @ IF =10mA VF 400 mV
Repetitive Peak Forward Current I FRM 300 mA
5
90 Non Repetitive Forward Current t<1s I FSM 600 mA
Power Dissipation at Tamb=25C Ptot 330 mW
0 0
0 10 20 30 0 50 100 150 Storage Temperature Range Tstg -55 to +150 C
Reverse Voltage VR (V) TA - Ambient Temperature ( C) JunctionTemperature Tj 125 C
CT v VR Characteristics PD v TA Characteristics
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown V(BR)R 30 50 V IR=10 A
Voltage
Forward Voltage VF 135 240 mV IF=0.1mA
200 320 mV IF=1mA
280 400 mV IF=10mA
350 500 mV IF=30mA
530 1000 mV IF=100mA
Reverse Current IR 2.5 4 A VR=25V
Diode Capacitance CD 7.5 10 pF f=1MHz,VR=1V
Reverse Recover trr 5 ns switched from
Time IF=10mA to IR=10mA
RL=100 , Measured
at IR=1mA
Dual Device; For simultaneous continuous use Tj=100C.
3-5 3-4