M-Power2 A series

(Advanced M-Power2)

2007 Mar. MP2A

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 July 11-2006
FDT Recommended Devices for LCD-TV application Ver. 3.0

Inch Output PFC circuit Converter DC/DC

size power for
IC MOSFET Diode IC MOSFET Diode intermediate bus
400W -- M-Power2
50 Super FAP-G
2SK3527-01 Current Resonant 24V&19V rail
*3pcs Super LLD1 YG868C10R
FA5502M 600V/0.37 YG965S6R 100V/30A
C.C.M. 600V/20A MP2A5038
12V rail
2SK3687-01MR 500V/0.38 YG865C04R 12V&24V
300W --
40 *3pcs
600V/0.57
Super LLD2 45V/20A input,
Built-in
YG972S6R MOSFET
2SK3527-01 600V/10A
*2pcs
F9223L,MP2A5050
FA7738N
500V0.5 24V&19V rail FA7740N
37 200W -- 2SK3687-01MR
YG865C10R 5V/1A
*2pcs
F9222L,MP2A5060 100V/20A
FA7741N
FA5501AN
500V/0.6 12V rail 5V/2A
D.C.M. 2SK3522-01
32 150W -- 500V/0.26
Super LLD2 YG862C04R
45V/10A
FA7742N
YG971S6R MP2A5077 5V/3A
600V/8A 500V/0.77
26 2SK3683-01MR FA7748N
5V/1A
500V/0.38
synchronous
100W --
23 2SK3469-01MR
500V/0.52 Quasi- 24V rail
FA7749N
24V input,
External
5V/3A MOSFET
Resonant 2SK3677-01M YG865C15R synchronous
700V/0.93 150V/20A
20 FA7746V
FA5531N 15-19V/3A
2SK3673-01M 15V rail
FA5541N
700V/1.18 YG862C10R FA7747V
100V/10A 15-19V/3A
synchronous

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Example for the Block Diagram of PDP application

385VDC
YG971S6R V-sus
M-Power2 A series 600V/8A Ex) 200V/2A
Vsus converter

YG982C3R V-a
200V/10A Ex) 70V/2A

PFC M-Power2 A series

Vx converter YG862C04R V-multi
Circuit (Va+Vmulti) 45V/10A
Ex) 12V/5A

YG862C04R V-multi
45V/10A
Ex) 15V/6A

DC/DC V-multi
FA7748P Ex) 6V/1A

2007 Mar. MP2A

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Development road map of Fuji M-Power

2003 2004 2005 2006 2007 2008

M-Power2 series
Line up Multi-oscillated current resonant Converter
Low Rds(on) for large output power(400W)
Improvement of functions & performance
Multi-oscillated current resonant Converter
High efficiency
M-Power2 M-Power2 A series Line up
Low noise
Built in stand-by mode A series M-Power2 new series
(Next gen. MOSFET etc.)

New narrow For narrow input application

input circuit (without PFC)

For system cost down

New topology For Multi-output

M-Power3

New topology & New control method

Low noise & high efficiency
C.O.C technology

2007 Mar. MP2A

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Outline of Advanced M-Power2

Feature

Circuit : Multi-oscillated current resonant type power supply (same as M-

Power2)

For larger output : MOSFET 500V/0.38 is applied. It is available to 300W

output or more.

Improvement and alteration in function

built in audible noise countermeasure circuit at light load
Over current Minus detection
Its available to adjust Q1 dead time.
Stand-by function is deleted. (Stand-by operation is available with
additional circuit)

The package is the same as M-Power2. But the pin assign is changed.

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Outline

D2

Q2
G2

VCC D1

External
stand-by circuit
PC1
FB

PC2
PC1 VW Q1
VREF
IC Advanced
CON M-Power2

IS
Alteration points
Over current detection circuit
(For minus detection)
S Q1 delay adjustment circuit
GND
(added between VW pin and Vcc-winding )
External stand-by circuit

Reg.

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Outline

Difference with M-Power2(comparison)

Device M-Power2 M-Power2 A series
Configuration Q1+Q2+Control IC
MOS Rds(on)[min] 0.6/500V 0.38/500V
Thermal resistance(j-c) 3.5/W 3.15
Heatsink size at 300W
5.0K/W (73*38*33mm) 7.7K/W (61*33.5*30mm)
output(*1
Stand-by power(*2) 0.6W 0.41W(External circuit)
Plus(+) detection Minus(-) detection
Over current protection(OC,PP)
Timer Latch with 0.1sec. Timer Latch with 0.035sec.
Short circuit protection(SC) 1Shot latch No function(Remove)
Over Heating protection(TjOH) Timer Latch with 0.1sec. Timer Latch with 0.035sec.
Over voltage protection(OV) 1Shot latch Timer Latch with 300us
Stand-by opertaion available No function (Remove)
Q1ON-delay Fixed (500ns) It is possible to adjust
Countermeasure circuit
External circuit Built in
of audible noize at Light load
Package SIP2313pin SIP23(13pin)
Forming F219 New

*1 with PFCcircuit,Ta=60,Tj=100
*2Input power at no load

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Outline

Out view and Forming

(tentative) M-Power2 A series
Pin Symbo Function
l
4&5 S1 MOSFET (Q1) source
7 S-GND Signal-Ground (VREF,FB,CON,VW)
8 P-GND Power-Ground
(Vcc,IS)
10 Vcc Power supply
11 VREF Reference voltage output
12 IS Current detection
13 FB Input feedback signal for constant
voltage control
14 CON Reference oscillation of Q1 ON-term
15 VW Q1 turn-on and off timing detection
16 - -
18&19 D1,S2 Q1 drain
Q2 source
20 G2 Q2 gate
22&23 D2 Q2 Drain

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Outline

Line up of M-Power2 A series (tentative)

MOSFET(Q1) MOSFET(Q2) Control IC
Type name Sam ple
V DS R DS(ON) V DS R DS(ON) V CC(ON) T j(OH)
MP2A5038 500V 0.38 500V 0.38 Available
MP2A5050 500V 0.5 500V 0.5 Sept.-2006
125
MP2A5060 500V 0.6 500V 0.6 16.5V Available
150
MP2A5077 500V 0.77 500V 0.77 Sept.-2006
MP2A2013 250V 0.125 250V 0.125 Sept.-2006

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Outline

External Stand-by operation : almost same as M-Power2

20
STB/Normal signal 5V/div 18

Burst frequency fb[Hz]

16
14 AC90V
Normal Mode STB mode Normal Mode 12 AC100V
10 AC140V
8 AC200V
ON and OFF
6
Continuous Switching Continuous AC240V
4
switching (Burst operation) switching 2
0
0 0.5 1 1.5 2 2.5

T:200ms/div Q1 Vds 100V/div Output Po[W ]

1.2

Operation waveform

Input power at no load Pin[W]

1.0
M-Power2
0.8

Condition 0.6

0.4
Output voltage 24VNo load 0.2
External standby operation
0.0
0 50 100 150 200 250 300
ACInput voltage Vin[V]

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Type name of M-Power2 A series

MP 2 A 5 038
MP2A000 series
Symbol of M-Power
Type name MOSFET
: Topology MP2A5077 500V/0.77
MP2multi-oscillated current resonant
converter MP2A5060 500V/0.6
Series of M-Power2 MP2A5050 500V/0.5
A (Old name : Advanced M-Power2)
MP2A5038 500V/0.38
Blocking voltage of MOSFET MP2A2013 250V/0.125
5500V
6600V
2250V
3300V

Rds(on)[max]
0380.38
1001.0
0130.125

Index

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