Preliminary

SemiWell Semiconductor BTA06-600B

UL : E228720

Bi-Directional Triode Thyristor

Symbol
2.T2

Features

Repetitive Peak Off-State Voltage : 600V 3.Gate
R.M.S On-State Current ( IT(RMS)= 6 A )
1.T1
High Commutation dv/dt
Isolation Voltage ( VISO = 1500V AC )

TO-220F
General Description

This device is fully isolated package suitable for AC switching

application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay. 1
2
This device is approved to comply with applicable require- 3

ments by Underwriters Laboratories Inc.

Absolute Maximum Ratings ( TJ = 25C unless otherwise specified )

Symbol Parameter Condition Ratings Units

VDRM Repetitive Peak Off-State Voltage 600 V

IT(RMS) R.M.S On-State Current TC = 94 C 6.0 A

One Cycle, 50Hz/60Hz, Peak,

ITSM Surge On-State Current 60/66 A
Non-Repetitive

I2 t I2 t 18 A2 s

PGM Peak Gate Power Dissipation 3.0 W

PG(AV) Average Gate Power Dissipation 0.3 W

IGM Peak Gate Current 2.0 A

VGM Peak Gate Voltage 10 V

VISO Isolation Breakdown Voltage(R.M.S.) A.C. 1 minute 1500 V

TJ Operating Junction Temperature - 40 ~ 125 C

TSTG Storage Temperature - 40 ~ 150 C

Mass 2.0 g

Mar, 2004. Rev. 0 1/6

copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
BTA06-600B

Electrical Characteristics
Ratings
Symbol Items Conditions Unit
Min. Typ. Max.

Repetitive Peak Off-State VD = VDRM, Single Phase, Half Wave

IDRM 1.0 mA
Current TJ = 125 C

VTM Peak On-State Voltage IT = 8 A, Inst. Measurement 1.5 V

I+GT1 20

I -GT1 Gate Trigger Current VD = 6 V, RL=10 20 mA

I -GT3 20

V+GT1 1.5

V-GT1 Gate Trigger Voltage VD = 6 V, RL=10 1.5 V

V-GT3 1.5

VGD Non-Trigger Gate Voltage TJ = 125 C, VD = 1/2 VDRM 0.2 V

Critical Rate of Rise Off-State TJ = 125 C, [di/dt]c = -3.0 A/ms,

(dv/dt)c
Voltage at Commutation VD=2/3 VDRM
5.0 V/

IH Holding Current 10 mA

Rth(j-c) Thermal Impedance Junction to case 3.8 C/W

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 BTA06-600B

Fig 1. Gate Characteristics Fig 2. On-State Voltage

2
10

VGM (10V)
1
10

PGM (3W)

On-State Current [A]

Gate Voltage [V]

o
1
TJ = 125 C
10
PG(AV) (0.3W)
25
0
10
IGM (2A)
o
TJ = 25 C
0
10

VGD (0.2V)
-1
10
1 2 3
10 10 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Gate Current [mA] On-State Voltage [V]

Fig 3. On State Current vs. Fig 4. On State Current vs.

Maximum Power Dissipation Allowable Case Temperature
10 130
Allowable Case Temperature [ oC]

9
o
8 2 = 180
o
Power Dissipation [W]

= 150 120
7 o
360
= 120
6 o
: Conduction Angle = 90
o
5 o 110 = 30
= 60
2 o
4 o = 60
= 30 o
3 = 90
100 360 o
2 = 120
o
: Conduction Angle = 150
1 o
= 180
0 90
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
RMS On-State Current [A] RMS On-State Current [A]

Fig 5. Surge On-State Current Rating Fig 6. Gate Trigger Voltage vs.
( Non-Repetitive ) Junction Temperature
80 10

70
Surge On-State Current [A]

60
60Hz _
50 V GT3
VGT (25 C)
VGT (t C)
o
o

40 1
+
50Hz V GT1
30 _
V GT1

20

10

0 0.1
10
0
10
1
10
2 -50 0 50 100 150
o
Time (cycles) Junction Temperature [ C]

3/6
BTA06-600B

Fig 7. Gate Trigger Current vs. Fig 8. Transient Thermal Impedance

Junction Temperature
10 10

Transient Thermal Impedance [ C/W]

o
IGT (25 C)
IGT (t C)
o
o

+
1 I GT1
_
I GT1

1
_
I GT3

0.1
-2 -1 0 1 2
-50 0 50 100 150 10 10 10 10 10
o Time (sec)
Junction Temperature [ C]

Fig 9. Gate Trigger Characteristics Test Circuit

10 10 10

A A A
6V 6V 6V
RG RG RG
V V V

Test Procedure Test Procedure Test Procedure

4/6
 BTA06-600B
TO-220F Package Dimension

mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.
A 10.4 10.6 0.409 0.417
B 6.18 6.44 0.243 0.254
C 9.55 9.81 0.376 0.386
D 13.47 13.73 0.530 0.540
E 6.05 6.15 0.238 0.242
F 1.26 1.36 0.050 0.054
G 3.17 3.43 0.125 0.135
H 1.87 2.13 0.074 0.084
I 2.57 2.83 0.101 0.111
J 2.54 0.100
K 5.08 0.200
L 2.51 2.62 0.099 0.103
M 1.25 1.55 0.049 0.061
N 0.45 0.63 0.018 0.025
O 0.6 1.0 0.024 0.039
3.7 0.146
1 3.2 0.126
2 1.5 0.059

A
H I
F E

B
1

C 2
L
G
1 M

D 2 1. T1
3 2. T2
3. Gate
J N O
K

5/6
BTA06-600B
TO-220F Package Dimension, Forming

mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.
A 10.4 10.6 0.409 0.417
B 6.18 6.44 0.243 0.254
C 9.55 9.81 0.376 0.386
D 8.4 8.66 0.331 0.341
E 6.05 6.15 0.238 0.242
F 1.26 1.36 0.050 0.054
G 3.17 3.43 0.125 0.135
H 1.87 2.13 0.074 0.084
I 2.57 2.83 0.101 0.111
J 2.54 0.100
K 5.08 0.200
L 2.51 2.62 0.099 0.103
M 1.25 1.55 0.049 0.061
N 0.45 0.63 0.018 0.025
O 0.6 1.0 0.024 0.039
P 5.0 0.197
3.7 0.146
1 3.2 0.126
2 1.5 0.059

A
H I
F E

B
1

C 2
L
G
1 M
D
2
1. T1
3
2. T2
N
O
3. Gate
J P
K

6/6
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