Diodes and Rectifiers in Power Electronics

Diodes and
Uncontrolled rectifiers
EE328 Power Electronics
Assoc. Prof. Dr. Mutlu BOZTEPE
Ege University, Dept. of E&E
Outline of lecture
Power semiconductor diodes
Reverse recovery effect
EE328 POWER ELECTRONICS
Power diode types

General purpose diode
Fast-recovery diodes
Schottky diodes
Series and parallel connection of diodes
Performans parameters of rectifiers
Single-phase half wave rectifiers
Resistive load
Resistive-inductive load
Single-phase full- wave rectifiers
Resistive load
Resistive-inductive load
Multiphase star rectifiers
Three-phase bridge rectifiers
EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 2
1
Power semiconductor diodes
A power diode is a two-terminal pn-junction
device
Forward biasing: When the anode potential is

positive with respects to the cathode, the
diode conducts. It has a small voltage drop
across it which depends on manufacturing
process and junction temperature.
Reverse biasing: When the cathode potential

is positive with respect to the anode, the diode
is cut-off. It has a small reverse current
(leakage current) which increases slowly in
magnitude with reverse voltage.
I-V characteristic of a power diode

Schockley diode equation
nV
VD

I D I S e T 1

VD&ID= Diode voltage & current
IS= leakage current, typically
micro- or nanoampere
n= Empirical constant,
diode factor, ranges from 1 to 2.
VT= Thermal voltage
kT Thermal voltage at 25C junction
VT temperature
q
k=1.3806x10-23 J/K, Boltzmans constant, kT 1.3806x1023 273 25
VT
q=1.6022x10-19 C, Electron charge q 1.6022x1019
T= Absolute temperature in K 25.8mV
2
Forward-biased region VD>0
Until the treshold voltage the diode current ID is very small.
The diode conducts fully if the VD is higher than the treshold value.
Case of 0<VD<Vtreshold
Lets assume VD=0.1, n=1, VT=25.8mV.
Corresponding diode current is;
100..0258
1

ID IS e
1 I S 48.23 1 47.23I S

It is still small since
Is is very small.
Case of Vtreshold<<VD
nV
VD
VD
T
I D I S e 1 I S e nVT
I D I S

It is much larger
than Is
Reverse-biased region
If VD<-0.1, the exponential term in diode equation becomes
negligibly small compared to unity.
nVVD
I D I S e T 1 I S

The diode current flows in the reverse direction
The reverse current is called as leakage current
In the real diodes, the leakage current increases with

increasing the reverse voltage
3
Avalanche region
The barrier of the diode breaks if the reverse voltage across it goes
beyond a certain value.
This voltage is known as breakdown voltage, VBR
Reverse current increases rapidly with a small change in the reverse
voltage beyond VBR
The operation of this region is not destructive
provided that the power dissipation is within
the safe level that is specified
in the manufacturer datasheet.
However, it is often necessary to limit
the reverse current in breakdown region.
Zener diodes use this region!
Keep the diode operating point

away from this region in rectifiers!
Exercise 1
The forward voltage drop of a power diode is VD=1.2V at ID=300A.
Assuming that n=2 and VT=25.8mV, find the saturation current IS.
Solution:
Using diode equation,
nV
VD

I D I S e T 1

2 01.0258
.2

300 I S e
1

8
I S 2.38371x10 A
4
Reverse recovery characteristics
If the current in a fwd biased diode is reduced to zero, the diode
continues to conduct due to minority carriers which remains stored
in the PN-junction.
It takes certain time to recombine and to be
neutralized. This time is known
as reverse recovery time, trr.
t rr t a tb
ta: is due to charge storage in the depletion region.
tb: is due to charge storage in the bulk
semiconductor material.
Peak reverse recovery current is
di
I RR t a
dt
Reverse recovery time depends on the
temperature, forward current (IF) and
down-slope of the forward current (di/dt).
Reverse recovery charge, QRR

QRR is the amount of charge carriers that flows through the diode in
reverse direction during recovery process.
It can be determined by integrating the reverse current.
It is approximately equal to
QRR
1 1
QRR I RR (t a tb ) I RR t rr
2 2
Substituting the IRR into the equation yields
1 di
QRR t a t rr
2 dt
If tb is neglected, that is usually the case, t rr t a tb t a , then
2QRR di QRR and di/dt are given in

t rr I RR 2QRR manufacturer datasheet!!
di dt dt
5
Measured reverse recovery time
Ref. One More Way to increase the Recovery Softness of Fast High-Voltage Diodes, By Chernikov A. A.,
Gubarev V. N., Stavtsev A. V., Surma A. M., and Vetrov I. Y., Proton, Electrotex ISC, www.powerguru.org
1N540x vs. UF540x
Slow recovery (Not suitable Fast recovery (50ns)

for high switching frequency Suitable for high frequency
applications. Use for line switching operations.
rectification purposes.!!) Relatively low peak surge
High peak surge current current capability
capability (IFSM=200A) (IFSM=150A)
6
Forward recovery time
If a diode is in a reverse-biased condition, a leakage current flows
due to the minority carriers.
When a fwd. voltage is applied,
the diode requires a certain time
to be turned on, known as
forward recovery
(or turn-on) time.
During recovery time, majority
carriers are formed along the junction
If the rate of rise of the forward
current is high and forward
current is concentrated to a
small area of junction, the
diode may fail.
Thus the forward recovery time limits the rate of the rise of forward
current and switching speed.
Measured forward recovery time
Ref. The Grey Area, By Thomas Schneider, www.powerguru.org
7
Exercise 2
The reverse recovery time of a power diode is trr=3us and the rate
of fall of the diode current di/dt=30A/dt. Determine;
a) The storage charge QRR,
b) The peak reverse current IRR.
Solution:
a)
QRR
2 dt
t rr 30 A / s 3x106
1 di 2 1
2
2
135C
b)
di
I RR 2QRR 2 135x106 30x106 90 A
dt
Summary of forward and reverse recovery
8
Power diode types (1)
Ideal diode have no reverse/forward recovery times.
Reducing the reverse recovery time in a diode increases its
manufacturing cost.
In many applications, the effects of reverse recovery time is not
significant, and therefore inexpensive diodes can
be used.
Depending on the recovery
characteristics and manufacturing
technics, the power diodes classified
into three categories;
Standard or general purpose diodes
Relatively high reverse recovery time
trr 25us
Used in low speed (up to 1kHz) where
the recovery time is not critical, e.g. Line
rectifiers etc.
from 1A to several kA, from 50V to
around 5kV
Power diode types (2)

Fast-recovery diodes
Low recovery time trr < 5us
Used in high speed dc/dc and dc/ac converters
from 1A to hundreds of A, from 50V to around 3kV
Epitaxial diodes has trr<50ns
Various market names; superfast diodes, ultrafast diodes etc.
Schottky diode
Metal-semiconductor junction (instead of semiconductor-semiconductor)
Majority carrier device which results in no recovery effect due to minority
carriers. But junction capacitance is large and causes reverse recovery
effect which is much less than junction diodes.
Maximum voltage is generally limited to 100V, and currents from 1 to
300A
Ideal for high current and low voltage circuits.
Forward voltage drop is considerable lower than junction diodes.
9
Reverse recovery behavior of different diode technologies
Note that the forward voltage drop increases as the reverse

recovery time decreases.
SiC schottky has the smallest reverse recovery time and recovery
charge QRR.
Effects of reverse recovery time

SW is turned on at t=0 and remains on
long enough until the current reaches
steady-state of Io=Vs/R Freewheeling
diode
Diode Dm is reversed biased.
SW is turned off at t=t1.
Dm conducts suddenly and load
circulates through Dm (freewheeling)
Now the SW is turned on again at t=t2.
Dm behaves as a short-circuit for a
certain time until reverse recovery
process is finished.
There is no device to limit the peak
reverse current, therefore Dm can be
failed due to excessive peak current
In practice, switching speed of SW is
reduced, i.e. the switch current rise time
(di/dt) is extended, or series di/dt
limiting inductor is added to the circuit.
10
Diodes in series
In many high voltage applications (e.g.
HVDC transmission lines) one commercially
available diodes can not meet the required
voltage rating.
In this case diodes are connected in series
in order increase the reverse blocking
capability.
However, in reality even two diodes of the
same part number will not have the same
characteristics due to tolerances in the
production process.
This gives rise to problems when diodes are
connected in series, since the blocking
voltages will differ slightly.
In the figure, each diodes has to carry same
leakage current, but blocking voltage would
differ significantly.
Diodes in series
This problem is solved by forcing equal voltage
sharing by connecting a resistor across each diode
Due to the equal voltage sharing the leakage current
of each diode would be different
In this arrangement, the total leakage current must be
shared by a diode and a resistor. Hence
I S I S1 I R1 I S 2 I R 2
V D1 V
We know I R1 I R2 D2
R1 R2
Therefore we obtain,
VD1 V
I S1 I S 2 D2
R1 R2
11
Diodes in series
VD1 V
I S1 I S 2 D2
R1 R2
We need to get VD1=VD2
If IR1>>IS1 and IR2>>IS2 then the equation
becomes
VD1 VD 2

R1 R2
If R=R1=R2 the two diode voltages would be
slightly different depending on the dissimilarities
of the to v-i curves
By using R1R2 , equal diode voltages can be
obtained. But it may not be preferred due to
leakage current varies the temperature
considerably.
For transient conditions an RC can be used.
Exercise 3
Two diodes are connected in series to share a total voltage of 5kV.
The reverse leakage currents od the diodes are IS1=30mA,
IS2=35mA
a) Find the diode voltages if the voltage sharing resistances are equal
R1=R2=R=100k
b) Find the resistance values R1 and R2, if the diodes voltages are
equal
Solution:
I s 2 I s1 2750V
a) VD R
VD1
I S1 IS2
VD 2 VD1
2 2
R R
VD 2 VD VD1 VD1 5kV 2750V 2250V
VD1 V Assuming R1 100k
I S1 I S 2 D2
b) R1 R2 VD1 R1
R2 125k
VD VD1 VD 2 VD1 R1 ( I s 2 I s1 )
12
Diodes in paralel
In parallel operation of diodes, current sharing
depends on the magnitude of their forward voltage
drops.
Uniform current sharing can be achieved either by
the use of equal inductances or by connecting
current sharing resistors, the later option may not
be practical due to power losses incurred by the
resistive components.
Dynamic current sharing is achieved with the use of
coupled inductors
If the current through diode D1 rises, then the
voltage across inductor L1 (Recall VL = L di/dt)
increases, causing a voltage of opposite polarity to
be induced across inductor L2.
The disadvantage of using current sharing devices
under dynamic conditions is that the inductors
would generate voltage spikes and would be
expensive and bulky.
Rectifiers
The purpose of a rectier may be to produce an output that is purely
dc, but in practice it has a dc component with a certain ripple
In practice, the half-wave rectier is used

most often in low-power applications
because the average current in the
supply will not be zero, and nonzero
average current may cause saturation
problems in transformer performance.
13
The average value of output (load) voltage given as Vdc
The average value of output (load) current given by Idc
The output dc power given by Pdc = VdcIdc
The rms value of output voltage given as Vrms
The rms value of output current given as Irms
The output ac power given by Pac = VrmsIrms
The efficiency or rectification ratio of a rectifier is given by
Pdc
Pac
The output voltage consists of two components, such as ac

component and dc component. The effective or (rms) value of the ac
component of output voltage is given by
Vac Vrms
2
Vdc2
Performance parameters of rectifiers

The form factor which is a measure of the shape of the output
voltage is given by
V
FF rms
Vdc
The ripple factor which is a measure of the ripple content is given by
V
RF ac
Vdc
or, Vac
2
Vrms Vdc2 Vrms
2
RF 1 FF 2 1
Vdc Vdc Vdc
The transformer utilization factor is defined as

Pdc
TUF
Vs I s
where Vs and Is are the rms voltage and rms current of the
transformer secondary respectively
14
vs is the sinusoidal input voltage
is is the instantaneous input current
is1 is the fundamental component of is
The displacement angle is the angle between fundamental
components of input current and voltage.
The displacement factor (DF) or Displacement Power Factor (DPF)
is defined as
DF cos

The harmonic factor (HF) also known as total harmonic distortion
(THD) is a measure of the distortion of a waveform. The harmonic
factor of the input current is given as
2
I s2 I s21 I
HF 2
s 1
I s1 I s1
The crest factor is a comparison of the peak input current to its rms
value. I s , peak
CF
Is
Ideal rectifier should have:
100%, Vac 0
RF 0, TUF 1
HF THD 0
PF DPF 1
15
Single phase half-wave rectifier
It is the simplest type of rectifiers.

During the positive half cycle D1 conducts
and the input voltage appears across
the load.
During the negative half cycle Diode D1
is blocking condition, and output voltage
is zero.
Note that there is a small forward
voltage drop across the D1.
Disadvantages of half wave rectifier
DC output voltage is discontinues and contains harmonics.
Input current is not sinusoidal
Transformer output current has dc component (saturation problem)
Single phase half-wave rectifier
Average output voltage

T T 2
1 1
Vdc
T 0
vL (t )dt
T V
0
m sin t dt
2
Vm T Vm
cos 1
T
Vdc
T 2
Effective output voltage

T T 2
V sin t dt
1 2 1 Vm
Vrms vL (t )dt Vrms
2
m
T0 T 0
2
16
Exercise 4
For half-wave rectifer, determine; a) efficiency, b) form factor, c)
ripple factor, d) TUF, e) PIV of D1, f) CF of input current.
Solution:
V V
Vdc m 0.318Vm Vrms m 0.5Vm
2
Vdc 0.318Vm Vrms 0.5Vm
I dc I rms
R R R R
Pdc Vdc I dc
0.318Vm 2 Pac Vrms I rms
0.5Vm 2
R R
Pdc 0.318Vm
2
a) 40.5% Low efficiency
Pac 0.5Vm 2
b) FF Vrms 0.5Vm 1.57 or 157%

Vdc 0.318Vm
Exercise 4
c) RF FF 2 1 1.572 1 1.21 or 121% Very high ripple factor.
d)
Rms voltage of transformer V
Vs m 0.707Vm
secondary is 2
0.5Vm
Rms value of transformer secondary current Is
is equal to rms value of the load current R
The Volt-ampere rating (VA) 0.5Vm 0.3535Vm2
of transformer VA Vs I s 0.707Vm
R R
Transformer utilization factor
Pdc 0.3182 Transformer should be 1/0.286=3.496
TUF 0.286 times larger than that when it delivers
Vs I s 0.3535 pure ac power to a load.
e) The peak reverse blocking voltage PIV Vm
I s , peak Vm R
f) Crest factor, CF 2
Is 0.5Vm R
17
Exercise 5
The source voltage is 120Vrms
at frequency of 60Hz. The load resistor
is 5 . Determine;
a) Average load current
b) Average power absorbed by the load
c) Power factor of the circuit
Solution:
Half-wave rectifier with RL load

Due to the inductive load the conduction
period of diode D1 will extend beyond
180 until the current becomes to zero.
Remember that the average inductor
voltage is zero.
The average output voltage is

sin t d t 2 cost
Vm Vm
Vdc
2
0
0

Vm
1 cos
2
Note that, the average output voltage decreases
with inductive load.
The average load current is
V
I dc dc
R
18
Adding a freewheeling diode
Freewheeling diode prevents negative
voltage appearing across the load.
The magnetic energy stored in inductor
increased. Freewheeling
The current transferred from D1 to Dm diode
this process is called as commutation.

The load time constant is
L

R
If the load time constant is large enough

the load current can be continues.
Note that, the average output voltage is

equal to the case of the resistive load
Exercise 6
In the circuit the battery voltage is 12V and its capacity is 100Wh.
The average current should be Idc=5A. The primary input voltage
Vp=120V, 60Hz, and the transformer turns ratio is n=2:1. Calculate;
a) the conduction angle of diode
b) the current-limiting resistor R
c) the power rating PR
d) the charging time in hours
e) the rectifier efficiency
f) the peak inverse voltage PIV of the diode
19
Solution
E= 12 V
Vp= 120 V
Vm =2 Vs= 84.85 V
a) for Vs > E the diode D1 conducts

E
Vm sin E sin 1
Vm
12
sin 1 8.13
84.85
180 180 8.13 171.87
The conduction angle
171.87 8.13 163.74
Solution
b) The current limiting resistance R is

Vm sin t E
d t
1
I dc
2
R

1
2Vm cos 2 E E
2R
which gives
R
1
2Vm cos 2 E E
2I dc

1
284.85 cos8.13 2120.1419 12
2 5
4.26
20
Solution
c) The power rating of R is
PR I rms
2
R
The rms current Irms is

1

Vm sin t E 2 d wt

2
I rms
2 R2
Vm2 V2
E 2 2 m sin 2 4Vm E cos
1

2R 2 2 2
67.4
I rms 67.4 8.2 A
The power rating is
PR 67.44.26 286.4W
Solution
d) The power delivered to the battery is
Pdc EI dc 12x5 60W
Charging time is
Energy 100Wh
hour 1.667h
Pdc 60W
e) Rectifier efficiency
Pdc 60W
17.32%
Pdc PR 60W 286.4W
f) PIV =Vm+E=84.85+12=96.85V
21
Psim verification of Ex.6
Average current=4.995A
RMS current=8.204 A
=8.13
See exercise2.psimsch file on web page.
Exercise 7
In the circuit, R=2, Vm=100V, and the frequency is 60Hz. Determine ;

a) the average load voltage and current
b) the power absorbed by the resistor in the circuit.
c) Verify solution via PSIM simulation (Homework)
22
Solution
a) Average load voltage Note that, the output voltage is
V 100 not negative due to the
Vdc m 31.8V freewheeling diode

b) Average load current
V 31.8
I dc dc 15.9 A
R 2
c) We need Irms to find power absorbed by the resistor. We can
calculate it by using integrals, but fourier series is another method.
Solution
c) The fourier series of half-wave rectified sinewave
V0 Vdc n 1, 2... an sin nt bn cos nt

2 2
Vm sin t sin nt d wt V sin t cos nt d wt

1 1
an bn
0
m
0
V
an m for n 1 Vm 1 (1) n
bn for n 2,4,6...
2 1 n2
an 0 for n 2,3,4... bn 0 for n 1,3,5...

Vm Vm 2Vm
V0 sin t cos nt
2 n 2 , 4 , 6... ( n 1)
2
23
Solution (cont.)
c) Lets calculate the rms current for first 5 terms of fourier series
Vm Vm 2V 2V 2V
V0 sin t m cos 2t m cos 4t m cos 6t ...
2 3 15 35
V0 31.8 50 sin t 21.2 cos 2t 4.24 cos 4t 1.82 cos 6t
the current for each term can be found using load impedance
Vn Vn
In
Zn R 2 nL
2
Resulting rms current

5.192 1.122 0.112 0.032
I rms 15.9 2 16.34 A
2 2 2 2
The resistor power
PR I rms
2
R 16.342 x 2 534W
Single-phase center tap full-wave rectifier
Each half of transformer constitutes

a half-wave rectifier.
There is no dc current flowing through
the transformer (no dc saturation prob.)
T 2
2 2V
T 0
Vdc Vm sin t dt m

PIV of the diodes is 2Vm
24
Single-phase full-wave bridge rectifier
Full utilization of transformer

Requires four diodes
PIV of the diodes is Vm
T 2
2 2V
Vdc
T 0
Vm sin t dt m

Exercise 8
A full wave center tap rectifier has a purely resistive load of R.
Determine; a) Efficiency, b) Form factor, c) Ripple factor,
d)Transformer utilization factor, e) Peak inverse voltage of the diode,
f) Crest factor of input current
Solution: V
2Vm Vrms m
0.707Vm
Vdc 0.6366Vm 2

Vrms 0.707Vm
Vdc 0.6366Vm I rms
I dc R R
R R
0.6366Vm
2
Pac Vrms I rms
0.707Vm 2
Pdc Vdc I dc
R R
a) Pdc 0.6366Vm 2 81%

2
Pac 0.707Vm
b) Vrms 0.707Vm
FF 1.11or 111%
Vdc 0.6366Vm
25
Exercise 8 (cont.)
c) RF FF 2 1 1.112 1 0.482 or 48.2%
d)
Rms voltage of transformer V
Vs m 0.707Vm
secondary is 2
0.5Vm
Rms value of transformer secondary current Is
is equal to rms value of the load current R
The Volt-ampere rating (VA) 0.5Vm 0.707Vm2
of transformer VA 2V s I s 2 0.707 Vm
R R
Pdc 0.63662 Transformer should be 1/0.573=1.74
TUF 0.573 (57.3%) times larger than that when it
Vs I s 0.707 delivers pure ac power to a load.
e) The peak reverse blocking voltage PIV 2Vm
I s , peak Vm R
f) Crest factor, CF 1.4142
Trans. input current
Is 0.707Vm R
Comparison of single phase rectifiers
Rectifier Full-Wave Transformer Rectifier

(R Load) (R Load)
Performance
Half-Wave Center-Tapped Bridge
Parameter
Efficiency () 40.5% 81% 81%
Form Factor (FF) 157% 111% 111%
Ripple Factor (RF) 121% 48.2% 48.2%
Transformer
Utilization Factor 28.6% 57.32% 81.1%
(TUF)
Peak Inverse Vm
Vm 2Vm
Voltage (PIV)
Crest Factor (CF) 2 1.414 1.414
26
Exercise 9
A single-phase bridge rectifier supplies

power to a highly inductive load such as a
DC motor. The motor current is ripple-
free. Transformer turns ratio is 1:1.
Determine;
a) Harmonics factor (HF),
b) Input power factor (PF) of rectifier.
Solution
The input current can be expressed
in a fourier series as

i1 (t ) I dc a
n 1, 3,...
n cos nt bn sin nt
2
1
I dc
2 i (t )dt 0
0
1
i (t ) cos nt d t 0
1
an

1
0
i (t ) sin nt d t n
1 4I a
bn

1
0
4 I a sin t sin 3t sin 5t

i1 (t ) ...
1 3 5
27
Solution
4 I a sin t sin 3t sin 5t
i1 (t ) ...
1 3 5
RMS value of fundamental component

4I a
I s1 0.90I a
2
RMS value of input current

2 2 2 2
4I a 1 1 1 1
Is 1 ... I a
2 3 5 7 9
a) Harmonic factor b) Displacement angle =0

and cos=1. Then Power
1
2 factor,
HF THD 1 0.4843 or 48.43% I
0.90 PF s1 cos 0.90 lagging
Is
Single-phase Full-wave rectifier with RL load

In practice, most loads are inductive
A battery is added to develop
generalized equations.
Input ac voltage source
vs Vm sin t 2Vs
The load current iL can be found from
diL
L RiL E 2Vs sin t
dt
The differential equation has a solution E
of the form
R
t
sint A1e L
2Vs E
iL
Z R
L
Z R 2 (L) 2 tan 1
R
28
Case 1: continues load current
The constant A1 can be determined
from condition: at t=, iL=I1
E 2Vs RL

A1 I1 sin e
R Z
Substituting of A1 to diff. equation yields,
RL t E
sint I1
2Vs E 2Vs
iL sin e
Z R Z R
Under steady-state condition iL(t=0) = iL(t=) = I1. Applying this
condition,
R

2Vs 1 e L E
I1 sin R
for I1 0
Z R
1 e L
Case 1: continues load current (cont.)

Substituting I1 and simplification gives
R
t
sint
2Vs 2 L
E
iL R
sin e for 0 t and iL 0
Z R
1 e L
RMS diode current can be found

i d t
1
Ir 2
2
L
0
And the RMS output current can then be determined by combining

the RMS current of each diode
I rms I r2 I r2 2I r
Average diode current

i d t
1
Id
2
L
0
29
Case 2: discontinues load current
The load current flows only during the
period t . The diodes start to
conduct at t= given by
E
sin 1
Vm
The constant A1 can be determined
from condition at t= , iL(t)= 0
E R
sin e L
2Vs
A1
R Z
Substituting it to diff. equation
E RL t
sint sin e
2Vs 2Vs
iL
Z R Z
Case 2: discontinues load current (cont.)

At t= , the current falls zero, and iL(t=)= 0. That is,
E R
sin sin e L
2Vs 2Vs
0
Z R Z
an be found from this transcendental equation by using an iterative
(trial and error) method.
After found, the RMS diode current can be calculated as

i d t
1
Ir 2
2
L

Idc must be calculated by using
The average diode current differential equation as like on the left.

i d t
1 Vdc E
Id
2 DO NOT USE I dc
L
R !!!!!!
30
Multiphase star rectifiers
Used in high power P>15kW
Less filter requirement
q single phase rectifier
Conduction angle of each
diode is 2/q
Secondary winding current is
unidirectional and contains
dc component.
Therefore primary must be
connected in delta to eliminate
dc component in the input side
of T.F.
This method minimizes the
harmonics content.
Multiphase star rectifiers (cont.)

Output dc voltage
q
cost d t
2
Vdc
2 q V
0
m
q
Vm sin
q
Rms output voltage

q
1 2
cos2 t d t Vm
2 q
Vrms V sin
2
2 q 2
m
0 q 2 q
Vm
If the load is purely resistive, the rms current of a diode Im
R
q
1 2 Vrms
cos2 t d t I m
2 q
Is I sin
2
2 2
m
0 q 2 q R
31
Exercise 10
A three phase star rectifier has a purely resistive load with R Ohms.
f) the peak current through a diode if rectifier delivers Idc=30A at an
output voltage of Vdc=140V.
Solution: q 1 2
Vrms Vm sin 0.841Vm
2 q 2 q
q
Vdc Vm sin 0.827Vm
q
Vrms 0.841Vm
I dc
Vdc 0.827Vm
I rms
R R R R
0.827Vm
2
Pac Vrms I rms
0.841Vm
2
Pdc Vdc I dc R
R
a) Pdc 0.827Vm
2
99.77%
Pac 0.841Vm 2
b) Vrms 0.841Vm
FF 1.0165or 101.65%
Vdc 0.827Vm
Exercise 10 (cont.)
c) RF FF 2 1 1.01652 1 0.1824 or 18.24%
d) Rms voltage of transformer secondary is
V
Vs m 0.707Vm
2
Rms value of transformer secondary current is equal to rms value of
the diode current
q 1 2 0.4854Vm
Is Im sin 0.4854I m
2 q 2 q R
The Volt-ampere rating (VA) of transformer
VA 3Vs I s 30.707Vm
0.4854Vm
R
Pdc 0.8272
TUF 0.6643 (66.43%)
3Vs I s 30.7070.4854
32
Exercise 10 (cont.)
e) The peak reverse blocking voltage
PIV 3Vm
f)The average current through each diode is

6

cost d t I m
2 1
Id
2 I
0
m

sin
q
For q=3, Id = 0.2757 Im. The average current through each diode is
30
Id 10 A
3
and this gives the peak current as
10
Im 36.27 A
0.2757
Three phase bridge rectifiers

Commonly used in high power
It is a full wave rectifier, and can operate with or without a
transformer
Diodes are numbered in order of conduction sequences and each
one conducts for 120
Diode conductance sequence is 12,23,34,45,56,61,
Line-to-line voltage is 3 times of the line-neutral phase voltages.
33
Average output voltage

12 6
3Vm cost d t
2 0
Vdc
3 3
Vm 1.654Vm

Rms output voltage
6
3Vm2 cos2 t d t
12
Vrms
2 0
3 9 3
Vm 1.6554Vm
2 4
Average output voltage Rms output voltage
6
3Vm2 cos2 t d t
12
12 6
3Vm cost d t Vrms
2 0
Vdc 2 0
3 3 3 9 3
Vm 1.654Vm Vm 1.6554Vm
2 4
34
If load is purely resistive
3
Im Vm
R
Rms value of diode current
6 1 1 2
I m2 cos2 t d t I m
4
Ir
2 0
sin
6 2
0.5518I m
6
Rms value of transformer secondary current
6 2 1 2
I m2 cos2 t d t I m
8
Is
2
0
sin
6 2
0.7804I m
6
Exercise 11
A three phase bridge rectifier has a purely resistive load of R.
f) the peak current through a diode if rectifier delivers Idc=60A at an
output voltage of Vdc=280.7V. The source frequency is 60Hz.
Solution: 3 9 3
3 3 Vrms Vm 1.6554Vm
Vdc Vm 1.654Vm 2 4

Vrms 1.6554Vm
Vdc 1.654Vm I rms
I dc R R
R R
1.654Vm 2 Pac Vrms I rms
1.6554Vm 2
Pdc Vdc I dc R
R
a) Pdc

1.654Vm 99.83% 2
Pac 1.6554Vm 2
b) V 1.6554Vm
FF rms 1.0008 or 100.08%
Vdc 1.654Vm
35
Exercise 10 (cont.)
c) RF FF 2 1 1.00082 1 0.04 or 4%
d) Rms voltage of transformer secondary is
V
Vs m 0.707Vm
2
Rms value of transformer secondary current is
2 1 2 V
Is Im sin 0.7804I m 0.7804 3 m
6 2 6 R
The Volt-ampere rating (VA) of transformer
VA 3Vs I s 30.707Vm 0.7804 3

Vm
R
Pdc 1.6542
TUF 0.9542 (95.42%)
3Vs I s 3 3 0.7070.7804
Exercise 10 (cont.)
e) The peak reverse blocking voltage
V 280.7
Vm dc 169.7V PIV 3Vm 3 169.7 293.9V
1.654 1.654
f)The average current through each diode is
6

cost d t I m
4 2
Id
2 I
0
m

sin
6
0.3183I m
The average current through each diode is

60
Id 20 A
3 Note that this rectifier has
and this gives the peak current as considerably improved
performances compared to that
20 of multiphase rectifier
Im 62.83 A
0.3183
36
Comparison of rectifier performances
Single Phase Full- Single Phase
Single Phase Half- Wave Center- Full-Wave Three-Phase
Performance
Wave Rectifier Tapped Transformer Bridge Bridge Rectifier
Parameter
(R Load) Rectifier Rectifier (R Load)
(R Load) (R Load)
Efficiency (h) 40.5% 81% 81% 99.83%
Form Factor (FF) 157% 111% 111% 100.08%
Ripple Factor (RF) 121% 48.2% 48.2% 4%
Transformer
Utilization Factor 28.6% 57.32% 81.1% 95.42%
(TUF)
Peak Inverse
Vm 2Vm Vm 3Vm
Voltage (PIV)
Crest Factor (CF) 2 1.414 1.414 1.047
12-pulse rectifier
In order to obtain equal
secondary voltages, the number
of turns of the two secondary
windings must be in a ratio of
1:3 (Turns ratio=4/7 or 7/12)
VRS(t)
VRDSD(t)
37
Rectifier circuit design
The design of rectifiers involves determining the ratings of
semiconductor diodes.
Average current
Rms current
Peak current
Peak inverse voltage
There are no standard procedure for design, but it is required to
determine the shapes of the diode currents and voltages.
Other dc filter types
Exercise
The current through a diode is shown in the figure above.

t1=100s, t2=350s, t3=500s, f=250Hz, fs=5kHz, Im=450A, Ia=150A
Determine,
a) The rms current (Ans.58.09A)
b) The average current (Ans. 12.79A)
38

Diodes and Rectifiers in Power Electronics

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Diodes and Rectifiers in Power Electronics

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Diodes and

Power diode types

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 2

Forward biasing: When the anode potential is

Reverse biasing: When the cathode potential

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 3

I-V characteristic of a power diode

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 4

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 5

The reverse current is called as leakage current

In the real diodes, the leakage current increases with

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 6

Keep the diode operating point

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 7

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 8

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 9

Reverse recovery charge, QRR

2QRR di QRR and di/dt are given in

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 11

1N540x vs. UF540x

Slow recovery (Not suitable Fast recovery (50ns)

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 13

Measured forward recovery time

Ref. The Grey Area, By Thomas Schneider, www.powerguru.org

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 14

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 15

Summary of forward and reverse recovery

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 16

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 17

Power diode types (2)

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 18

Note that the forward voltage drop increases as the reverse

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 19

Effects of reverse recovery time

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 20

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 21

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 22

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 25

In practice, the half-wave rectier is used

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 26

The output voltage consists of two components, such as ac

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 27

Performance parameters of rectifiers

The transformer utilization factor is defined as

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 29

Performans parameters of rectifiers

It is the simplest type of rectifiers.

Single phase half-wave rectifier

Average output voltage

Effective output voltage

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 32

b) FF Vrms 0.5Vm 1.57 or 157%

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 33

e) The peak reverse blocking voltage PIV Vm

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 35

Half-wave rectifier with RL load

this process is called as commutation.

If the load time constant is large enough

Note that, the average output voltage is

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 37

EE328 Power Electronics, Dr. Mutlu Boztepe, Ege University, 2016 38

a) for Vs > E the diode D1 conducts