Chapter 5 - Ele232 - Feb11 (Compatibility Mode) PDF

Chapter 5 – AC Analysis of BJT
Learning Outcome
At the end of this chapter, students able to:

Chapter 5 : AC Analysis of BJT Analyze the small signal of single stage BJT amplifier circuits
Ca
Calculates
cu ates tthe
e ttransistor
a s sto pa
parameters
a ete s suc
such as voltage
o tage ga
gain Av,
current gain Ai, input impedance Zi and output impedance
Zo.
Norsabrina Sihab
Faculty of Electrical Engineering,
Universiti Teknologi MARA
Pulau Pinang
Tel : 04-3823355
Email : norsabrina@ppinang.uitm.edu.my
1
Norsabrina Sihab Electronics 1 Updated May 2011
Chapter 5 – AC Analysis of BJT Chapter 5 – AC Analysis of BJT

3 4
Introduction Introduction
Increasing the power of an AC signal is called amplification. In this chapter we learn how to analyze and work with a single
I
Increase th
the power llevell - make
k it a weakk signal
i l become
b more stage amplifier.
lifi
stronger. To examine ac response of BJT Amplifiers by reviewing models
Amplification circuit called amplifier eg. Bipolar transistor frequently used to represent the transistor in ac domain.
Amplifie p
Amplifier properties:
ope ties A lit d off the
Amplitude th input
i t signal
i l will
ill determine
d t i whether
h th to
t use
1. Voltage gain, AV small signal or large signal analysis techniques.
2. Current gain, Ai
3 Input
3. I t iimpedance,
d Zi
4. Output impedance, Zo
Good Amplifier:
1. High h Voltage
l gain, AV
2. High Input impedance, Zi
3. Low Output impedance, Zo
4. High Bandwidth, BW
Norsabrina Sihab Electronics 1 Updated May 2011 Norsabrina Sihab Electronics 1 Updated May 2011
5 6
Transistor Equivalent Model 1. Hybrid-π Model

only this model being use in ELE232
• A model is an equivalent circuit that represents the AC
characteristics of the transistor. ¾The hybrid π model is most useful for analysis of high
• A model uses circuit elements that approximate the behavior of f
frequency ttransistor
i t applications.
li ti
the transistor.
¾At lower frequencies the hybrid π model closely
• There are two models commonly used in small signal AC analysis
approximate the re parameters, and can be replaced by
of a transistor:
them.
1. Hybrid -π equivalent model (will be more emphasized)
2. re-model
g mv π = β i b
rπ = ( β + 1)re
26mV
re =
IE

7 8
2. re Transistor Model
2 re model
2. d l
ib
b c
¾ BJTs
BJT are basically
b i ll current-controlled
t t ll d devices,
d i therefore
th f the
th re-model
d l +
uses a diode and a current source to duplicate the behavior of the Vbe βre βib rce=ro
transistor. _
¾ One disadvantage to this model is its sensitivity to the DC level

level. This e
model is designed for specific circuit conditions. Transistor ac equivalent

circuit for common emitter
¾The use of re model then becomes more desirable because an
important parameter of the equivalent circuit is determined by the ie
actual operating conditions but one must still turn to the data sheets e
+
c
for some of the other parameters of the equivalent circuit.

Vbe re ie rce=ro
¾The re model also failed to include the feedback term,, which in some
cases can be important. b
_
¾The re model is really a reduced version of the hybrid-π model used Transistor ac equivalent
extensively for high-frequency analysis. circuit for common base
9 10
1a) Common Emitter - by passed RE Common Emitter - by passed RE
1. Replace all capacitors with short 3. Determine the BJT model b rbb’ ib c
Vcc
circuit and set dc source to zero. parameters : Zi, Zo, Av, and Ai +
R1//R2 Vπ rπ gmvπ rce Rc
_
R1 Rc
R1 R2 Rc e
Zi Zb Zo
Ci
Co
Simplified hybrid-π equivalent
Simplified AC equivalent circuit circuit of a CE amplifier.
vo
vin Amplifier with the hybrid-π
R2 RE 2. Substitute BJT with hybrid-π model.
Ce rbb’ ib
equivalent circuit
b c Input impedance
+
By passed RE
Vπ rπ gmvπ rce Zi = R 1 || R 2 || Zb
Vb ib (rbb ' + rπ )
= rbb ' + ( β + 1)re
_
e where Zb = =
ib ib
Hybrid-π transistor model

11 12
Common Emitter - by passed RE Exercise 1
Voltage gain: Output impedance: For the circuit in figure below obtain + 20V
Set
S t Vi to
t zero. the
V g V (R || r ) i. Emitter current, IE and re
A v = o = − m π C ce Therefore Vπ=0. gmVπ=0 also. 2k7
Vi i b (rbb ' + rπ ) ii. Input impedance, Zi, and the 82k
10μF
C Io output impedance, Zo
where g m Vπ = β ib and rπ = ( β + 1)re +
iii Voltage
iii. V lt gain,
i Av and d th
the currentt 10 F
10μ
− β ib (R C || rce ) Vo gain, Ai Tr1

∴Av = rce Rc
ib ( rbb ' + ( β + 1)re ) 33k
- Given that the parameters of the
− β (R C || rce ) transistor is as follows. β=100,
120R vo
= 18k
rbb ' + ( β + 1)re Zo
rbb’=10Ω, rce=∞Ω and VBE=0.7V.
vin
Vo State any assumptions made.

Zo = = RC || rce 1k5
47μF
Io
Current gain without RL: Current gain with RL: Answer : IE=1.79mA, re=14.53Ω,
Zi=1.343kΩ, Zo=2.7kΩ, Zi Zo
Z Zi
Ai = A v i Ai = A v Av= -168.92, Ai= -90.75
Zo Zo //R L
13 14
Exercise 1b) Common Emitter – un

un-bypassed
bypassed RE
A basic common emitter BJT amplifier in below has a
quiescent point of the collector current, ICQ = 2 mA. Answer Vcc
the following : vo
i.Draw the ac equivalent circuit vin
ii.Input impendance, Zi Answer : 478.9Ω Rc
R1
iii.Output impedance, Zo Answer : 2.107kΩ
iv.Voltage gain, AV Answer : -151.1
v Current Gain
v.Current Gain, Ai Answer : -34.35
34 35 Ci Co
Use VT = 26mV, β = 120, rce = 50 kΩ, rbb = 100Ω
Tr1
Ac equivalent circuit
+20V
R2 RL vo
vin
671 IC 2.2 k
Vo Ce
Ci Co
Vi
1.54 k CE
Zo Hybrid-π equivalent circuit of the
Zi
Common Emitter Amplifier.

15 16
Common Emitter – un
un-bypassed
bypassed RE Exercise 2
Input impedance Voltage gain

For the circuit below, obtain the
Z in = R1 // R 2 // Z b V − g mvπ (rce // Rc // RL ) i. Emitter current, IE and re
+20V
Av = o =
Vb i b ( rbb ' + rπ + ( β + 1)RE1 ) Vi ib (rbb' + rπ + ( β + 1) RE1) ii. Input impedance, Zi, and the output 2k7
Zb = = where g m Vπ = βib and rπ = ( β + 1)re impedance, Zo
82k 10μF
ib ib
= rbb ' + rπ + ( β + 1)RE1 − βib (rce // Rc // RL ) iii Voltage gain,
iii. gain Av and the current 10μF
Av = gain, Ai Tr1
ib (rbb' + rπ + ( β + 1) RE1)
− β (rce // Rc // RL )
Output impedance = Given that the parameters of the 120R 33k
Set Vi to zero. rbb' + rπ + ( β + 1) RE1 transistor is as follows. β=100, vin

18k
vo
Therefore Vπ=0. gmVπ=0 also. rbb’=10Ω, rce=∞Ω and VBE=0.7V. 1k5

47μF
State any assumptions made.
made
Current gain:
vo
zo = = rce // Rc Zi Answer : IE=1.79mA, re=14.53Ω,
io Ai = A v Zi= 7.08 kΩ, Zo=2.7kΩ, Zi Zo
Zo //R L Av= -18.35 , Ai= -52.04
17 18
Exercise 3 2) Common Base Amplifier

rce
For the circuit below obtain the voltage gain, Av, the current gain, Ai, the
input impedance
impedance, Zi, and the output impedance,
impedance Zo, given that the e ie c
parameters of the transistor is as follows. β=100, rbb’=75Ω, rce=30kΩ and e c
ib
+ gmvπ
VBE=0.7V. State any assumptions made. Vπ rπ
Answer : re=10.28Ω, Av= -14.136, Zin=8.362kΩ, Zout=2.724kΩ, Ai= -43.346 Rc
RE _
20 V
20V
b’
82k 3k3 b rbb’

10μF
Ac equivalent circuit of a common b
10μF
base amplifier. Zi Ze Zo
Tr 1
Hybrid-π equivalent circuit of
180R
33k the Common Base Amplifier
Amplifier.
vo
vin 18k
820R
47 F
47μ

19 20
Common Base Amplifier Exercise 4
Input Impedance Output impedance For the circuit below, obtain the Voltage gain, Av, the input impedance, Zi
and the output impedance,
impedance Zo, given that the parameter of the transistor is
Set Vi to zero.
as follows. β=100,rb’b=10Ω,rce=∞ and VBE=0.7V. State any assumptions
Zi = RE // Ze Therefore Vπ=0. gmVπ=0 also.
made.
Vi i b (rπ + rbb ' ) (rπ + rbb ' ) Answer : re=10.28Ω, Av=257.14, Zin=10.27Ω, Zout=2.7kΩ, Ai=0.98
Ze = = =
ie i b ( β + 1) ( β + 1)
. 10μF
Voltage gain
47μF
Vo g m vπ (rce // Rc )
Av = = v
zo = o = rce // Rc
Vi ib (rbb ' + rπ ) io 100μF
where gm Vπ = βib and rπ = ( β + 1) re

Current gain, Ai
βib (rce // Rc ) β (rce // Rc )
Av = = Zi
ib (rbb ' + rπ ) (rbb ' + rπ ) Ai = A v ≈1 A common base Amplifier
Amplifier.
Zo//RL
21 22
3) Common Collector Amplifier Common Collector Amplifier
Input Impedance Voltage gain

RE
R1 R2 Z i = R1 // R2 // Zb
V ie RE
where g m Vπ = βib and rπ = ( β + 1)re Av = o =
Vi ib (rbb' + rπ ) + ie RE
V i (r + r ) + ( g mVπ + ib ) RE
Z b = i = b π bb' =
( β + 1)ib RE
ac equivalent circuit of a CC ib ib ib (rbb' + rπ ) + ( β + 1)ib RE
amplifier. i (( β + 1)re + rbb' ) + ( βib + ib ) RE ( β + 1) RE
= b =
ib (rbb' + rπ ) + ( β + 1) RE
ib (( β + 1)re + rbb' + ( β + 1) RE )
=
ib
= ( β + 1)re + rbb' + ( β + 1) RE
Hybrid-π equivalent circuit of a

CC amplifier.

23 24
Common Collector Amplifier

Exercise 5
b ib rbb’ rπ e ie
Output impedance + Vπ - +
Set Vi to zero. gmvπ
For the circuit in figure below obtain
Vi=0 R1//R2 RE Vo 20 V
the
Z o = RE // Z o '
-- i. Emitter current, IE and re
− i (r + r )
Z o ' = x = b π bb'
V
c ii. Input impedance, Zi, and the 2k7
82k
ix − ie
ib rbb
bb’ rπ e ie p impedance,
output p , Zo
ib (rπ + rbb' )
= + iii. Voltage gain, Av and the current Ci
ib + g mVπ + Vπ -
gmvπ
gain, Ai
i (r + r )
= b π bb'
RE Vo
ib + βib vin
-- Given that the parameters of the 18k 1k0 vo
r +r
= π bb' c
transistor is as follows. β=100,
1+ β Zo’ Zo=RE//Zo’
ib rbb’ rπ e ie bb’=10Ω, rce=∞Ω and VBE=0.7V.
rbb
+ Vπ - ix State any assumptions made. Common collector Amplifier
Current gain
gmvπ
VX Answer : IE=2.53mA, re=10.28Ω,
circuit.
Zi=12.89kΩ, Zo=10.27Ω, Av= 0.99, Ai= 1.24k
zi
Ai = Av
zo // RL c
Zo’
25 26
Tutorial Tutorial
1. Determine Zin, Zo, AV and AVS 2. Determine Zin, Zo, AV, Ai, and AVS. Vo when
β=150,rrb’b=10Ω,r
β=150 =10Ω rce=50kΩ Vs=25mV.
25 V β=120,r
β 120 b’b=10Ω,r
10Ω ce=∞Ω
Ω and
d VBE=0.7V.
0 7V
and VBE=0.7V. State any State any assumptions made.
assumptions made.
Answer: IE=7.81mA,
A 7 81 A re= 3.33Ω,
3 33Ω Zin = 412.2Ω
412 2Ω , Zo = 1.8kΩ,
1 8kΩ AV
= -338.27, Ai = -119.79, and AVS =-137.75. Vo = 3.45V
Vcc = +24V
RC
R1 1k8
240k Co Vo
RS
600R Ci
Vi
β=120
VS RL
RE
CE 3k3
1k0
Zi Zo

Chapter 5 - Ele232 - Feb11 (Compatibility Mode) PDF

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Chapter 5 - Ele232 - Feb11 (Compatibility Mode) PDF

Uploaded by

Copyright:

Available Formats

Chapter 5 – AC Analysis of BJT

At the end of this chapter, students able to:

Chapter 5 – AC Analysis of BJT Chapter 5 – AC Analysis of BJT

Transistor Equivalent Model 1. Hybrid-π Model

Chapter 5 – AC Analysis of BJT Chapter 5 – AC Analysis of BJT

¾ One disadvantage to this model is its sensitivity to the DC level

model is designed for specific circuit conditions. Transistor ac equivalent

for some of the other parameters of the equivalent circuit.

1a) Common Emitter - by passed RE Common Emitter - by passed RE

R1//R2 Vπ rπ gmvπ rce Rc

Chapter 5 – AC Analysis of BJT Chapter 5 – AC Analysis of BJT

Common Emitter - by passed RE Exercise 1

− β ib (R C || rce ) Vo gain, Ai Tr1

Vo State any assumptions made.

Exercise 1b) Common Emitter – un

Chapter 5 – AC Analysis of BJT Chapter 5 – AC Analysis of BJT

Input impedance Voltage gain

Set Vi to zero. rbb' + rπ + ( β + 1) RE1 transistor is as follows. β=100, vin

Therefore Vπ=0. gmVπ=0 also. rbb’=10Ω, rce=∞Ω and VBE=0.7V. 1k5

Exercise 3 2) Common Base Amplifier

82k 3k3 b rbb’

Chapter 5 – AC Analysis of BJT Chapter 5 – AC Analysis of BJT

Common Base Amplifier Exercise 4

where gm Vπ = βib and rπ = ( β + 1) re

3) Common Collector Amplifier Common Collector Amplifier

Input Impedance Voltage gain

Hybrid-π equivalent circuit of a

Chapter 5 – AC Analysis of BJT Chapter 5 – AC Analysis of BJT

Common Collector Amplifier

You might also like