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2SJ412
DC-DC Converter, Relay Drive and Motor Drive
Applications Unit: mm
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
JEDEC ―
Characteristics Symbol Max Unit
JEITA ―
Thermal resistance, channel to case Rth (ch-c) 2.08 °C/W TOSHIBA 2-10S2B
Thermal resistance, channel to ambient Rth (ch-a) 83.3 °C/W Weight: 1.5 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 1.84 mH, RG = 25 Ω, IAR = −16 A
Rise time tr ― 18 ―
ID = −8 A
0V
VGS VOUT
RL = 6.25 Ω
Turn-on time ton −10 V ― 30 ―
Switching time ns
50 Ω
Fall time tf ― 18 ―
VDD ≈ −50 V
Marking
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ID – VDS ID – VDS
−5 −20
−4 −3 −8 Common source
Tc = 25°C
−8 Pulse test
−4 −16 −6
−10 −6
Drain current ID (A)
−2.5
−2 −8
−3
−1 −4
−2.5
VGS = −2 V
VGS = −2 V
0 0
0 −0.4 −0.8 −1.2 −1.6 −2.0 0 −2 −4 −6 −8 −10
Pulse test
−8
25
Drain current ID (A)
Tc = −55°C
−2.4
100
−6
Drain-source voltage
−1.6 ID = −8 A
−4
−4
−2 −0.8
−2
0 0
0 −1 −2 −3 −4 −5 −6 0 −4 −8 −12 −16 −20
|Yfs| – ID
RDS (ON) – ID
30
2.0
|Yfs| (S)
10
0.5
RDS (ON) (Ω)
25 0.3 VGS = −4 V
5 100
3 −10
0.1
0.05
1 0.03
−0.3 −1.0 −3 −10 −20 −0.1 −0.3 −1.0 −3 −10 −20
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2SJ412
(A)
0.4 Pulse test
−4 −8 −10
0.2 VGS = −4 V −2
−3
−2
−1.0
0.1
VGS = −10 V −5
−0.5 0, 1
−1
0 −0.3
−80 −40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0
500
Gate threshold voltage
300 Coss
−2
Common source
100 VGS = 0 V
Crss
f = 1 MHz
50 −1
Tc = 25°C
30
−0.1 −0.3 −1 −3 −10 −30 −100
Pulse test
VDS (V)
VGS (V)
−80 −16
60
VDS
−60 −12
VDD = −80 V
Drain-source voltage
Gate-source voltage
40 −20 V
−40 −40 V −8
20
−20 −4
VGS
0 0 0
0 40 80 120 160 0 20 40 60 80 100
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rth – tw
3
0.3 0.2
0.1 PDM
0.1 t
0.05
0.05 T
0.02
0.03
Duty = t/T
0.01 Single pulse Rth (ch-c) = 2.08°C/W
0.01
10 μ 100 μ 1m 10 m 100 m 1 10
−100
Avalanche energy EAS (mJ)
100
−1
*: Single nonrepetitive pulse
−0.5 Tc = 25°C 0
25 50 75 100 125 150
−0.3 Curves must be derated
linearly with increase in
temperature.
Channel temperature Tch (°C)
VDSS max
−0.1
−0.3 −1 −3 −10 −30 −100 −300
VDD VDS
RG = 25 Ω 1 2 ⎛ B VDSS ⎞
Ε AS = ·L·I · ⎜⎜ ⎟
⎟
VDD = −25 V, L = 1.84 mH 2 B
⎝ VDSS − V DD ⎠
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