Data Sheet No.

PD60046-Q

IR2104(S)
HALF-BRIDGE DRIVER
Features Product Summary
• Floating channel designed for bootstrap operation
Fully operational to +600V VOFFSET 600V max.
Tolerant to negative transient voltage
dV/dt immune
IO+/- 130 mA / 270 mA
• Gate drive supply range from 10 to 20V
VOUT 10 - 20V
• Undervoltage lockout
• 3.3V, 5V and 15V input logic compatible ton/off (typ.) 680 & 150 ns
• Cross-conduction prevention logic
• Internally set deadtime Deadtime (typ.) 520 ns
• High side output in phase with input
• Shut down input turns off both channels
• Matched propagation delay for both channels Packages
Description
The IR2104(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
8 Lead SOIC 8 Lead PDIP
dized monolithic construction. The logic input is com- IR2104S IR2104
patible with standard CMOS or LSTTL output, down to
3.3V logic. The output drivers feature a high pulse cur-
rent buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-
channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts.

Typical Connection
up to 600V

VCC

VCC VB
IN IN HO
SD SD VS TO
LOAD

COM LO

(Refer to Lead Assignment for correct pin configuration) This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

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IR2104(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.

Symbol Definition Min. Max. Units

VB High side floating absolute voltage -0.3 625
VS High side floating supply offset voltage VB - 25 VB + 0.3
VHO High side floating output voltage VS - 0.3 VB + 0.3
VCC Low side and logic fixed supply voltage -0.3 25 V

VLO Low side output voltage -0.3 VCC + 0.3

VIN Logic input voltage (IN & SD ) -0.3 VCC + 0.3
dVs/dt Allowable offset supply voltage transient — 50 V/ns
PD Package power dissipation @ TA ≤ +25°C (8 lead PDIP) — 1.0
W
(8 lead SOIC) — 0.625
RthJA Thermal resistance, junction to ambient (8 lead PDIP) — 125
°C/W
(8 lead SOIC) — 200
TJ Junction temperature — 150
TS Storage temperature -55 150 °C
TL Lead temperature (soldering, 10 seconds) — 300

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.

Symbol Definition Min. Max. Units

VB High side floating supply absolute voltage VS + 10 VS + 20
VS High side floating supply offset voltage Note 1 600
VHO High side floating output voltage VS VB
V
VCC Low side and logic fixed supply voltage 10 20
VLO Low side output voltage 0 VCC
VIN Logic input voltage (IN & SD ) 0 VCC
TA Ambient temperature -40 125 °C

Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).

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 IR2104(S)
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified.

Symbol Definition Min. Typ. Max. Units Test Conditions

ton Turn-on propagation delay — 680 820 VS = 0V
toff Turn-off propagation delay — 150 220 VS = 600V
tsd Shutdown propagation delay — 160 220
tr Turn-on rise time — 100 170 ns
tf Turn-off fall time — 50 90
DT Deadtime, LS turn-off to HS turn-on & 400 520 650
HS turn-on to LS turn-off
MT Delay matching, HS & LS turn-on/off — — 60

Static Electrical Characteristics

VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to
COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.

Symbol Definition Min. Typ. Max. Units Test Conditions

VIH Logic “1” (HO) & Logic “0” (LO) input voltage 3 — — VCC = 10V to 20V
VIL Logic “0” (HO) & Logic “1” (LO) input voltage — — 0.8 VCC = 10V to 20V
V
VSD,TH+ SD input positive going threshold 3 — — VCC = 10V to 20V
VSD,TH- SD input negative going threshold — — 0.8 VCC = 10V to 20V
VOH High level output voltage, VBIAS - VO — — 100 IO = 0A
mV
VOL Low level output voltage, VO — — 100 IO = 0A
ILK Offset supply leakage current — — 50 VB = VS = 600V
IQBS Quiescent VBS supply current — 30 55 VIN = 0V or 5V
IQCC Quiescent VCC supply current — 150 270 µA VIN = 0V or 5V
IIN+ Logic “1” input bias current — 3 10 VIN = 5V
IIN- Logic “0” input bias current — — 1 VIN = 0V
VCCUV+ VCC supply undervoltage positive going 8 8.9 9.8
threshold
V
VCCUV- VCC supply undervoltage negative going 7.4 8.2 9
threshold
IO+ Output high short circuit pulsed current 130 210 — VO = 0V
PW ≤ 10 µs
mA
IO- Output low short circuit pulsed current 270 360 — VO = 15V
PW ≤ 10 µs

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IR2104(S)
Functional Block Diagram

VB

HV
LEVEL Q
SHIFT HO
PULSE R
FILTER S

VS
IN
PULSE
GEN

UV
DEAD TIME & DETECT
SHOOT-THROUGH
PREVENTION
VCC
VCC

LO
SD

COM

Lead Definitions
Symbol Description
IN Logic input for high and low side gate driver outputs (HO and LO), in phase with HO
SD Logic input for shutdown
VB High side floating supply
HO High side gate drive output
VS High side floating supply return
VCC Low side and logic fixed supply
LO Low side gate drive output
COM Low side return

Lead Assignments

1 VCC VB 8 1 VCC VB 8
2 IN HO 7 2 IN HO 7

3 SD VS 6 3 SD VS 6

4 COM LO 5 4 COM LO 5

8 Lead PDIP 8 Lead SOIC

IR2104 IR2104S

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 IR2104(S)

IN IN(LO)
50% 50%
SD
IN(HO)
ton tr toff tf

HO 90% 90%

LO
LO
HO 10% 10%

Figure 1. Input/Output Timing Diagram Figure 2. Switching Time Waveform Definitions

50% 50%
SD IN
50%

90%
tsd

HO 90% HO 10%
LO DT DT
LO 90%

Figure 3. Shutdown Waveform Definitions

10%

Figure 4. Deadtime Waveform Definitions

IN (LO)
50% 50%
IN (HO)

LO HO

10%

MT MT

90%

LO HO

Figure 5. Delay Matching Waveform Definitions

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IR2104(S)

1 40 0 1400
1 20 0 1200

Turn-On Delay Time (ns)

T urn -O n D e lay T im e (n s)

Max.
1 00 0 1000
M a x.
8 00 800
Typ.
6 00 600
T yp .
4 00 400

2 00 200

0 0
-50 -25 0 25 50 75 1 00 1 25 10 12 14 16 18 20
Temperature (°C) VBIAS Supply Voltage (V)

Figure 6A. Turn-On Time vs Temperature Figure 6B. Turn-On Time vs Supply Voltage

1000 5 00
Max.
Turn-On Delay Time (ns)

800 4 00
Turn-Off Delay Time (ns)

600 3 00
Typ.
400 2 00 M ax .

200 1 00
T yp .

0 0
0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 1 00 1 25
Temperature (°C)
Input Voltage (V)
Figure 6C. Turn-On Time vs Input Voltage Figure 7A. Turn-Off Time vs Temperature

500 1000
Turn-Off Delay Time (ns)

800
Turn-Off Delay Time (ns

400

300 Max. 600

Ma x .
200 400
Typ.
100 200
Typ
0 0
10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
VBIAS Supply Voltage (V) Input Voltage (V)

Figure 7B. Turn-Off Time vs Supply Voltage Figure 7C. Turn-Off Time vs Input Voltage

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 IR2104(S)

500
500
Shutdown Delay Time (ns)

Shutdown Delay Time (ns)

400
400

300 Max.
300

200 M ax.
200
Typ.
100
T y p. 100

0
0
-5 0 -2 5 0 25 50 75 100 125
10 12 14 16 18 20
Temperature (°C) VBIAS Supply Voltage (V)

Figure 8A. Shutdown Time vs Temperature Figure 8B. Shutdown Time vs Voltage

500 500
Turn-On Rise Time (ns)
Turn-On Rise Time (ns)

400 400

300 300
M ax.
200 M ax. 200

100 100
Typ.
Typ.
0 0
-5 0 -2 5 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (°C) VBIAS Supply Voltage (V)

Figure 9A. Turn-On Rise Time Figure 9B. Turn-On Rise Time vs Voltage
vs Temperature

20 0 200
Turn-Off Fall Time (ns)
Turn-Off Fall Time (ns)

15 0 150

M ax.
10 0 100
M ax.

50 50
Typ.
Ty p.
0 0
-50 -25 0 25 50 75 10 0 12 5 10 12 14 16 18 20
Temperature (°C) VBIAS Supply Voltage (V)

Figure 10A. Turn-Off Fall Time Figure 10B. Turn-Off Fall Time vs Voltage
vs Temperature

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IR2104(S)

1400 1400

1200 1200

Deadtime (ns)
1000 1000
Deadtime (ns)

M ax.
800 800
M ax.
600 600
Typ.
Typ.
400 400
M in .
200 M in . 200

0 0
-5 0 -2 5 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (°C) VBIAS Supply Voltage (V)

Figure 11A. Deadtime vs Temperature Figure 11B. Deadtime vs Voltage

8 8
7 7
In pu t V olta g e (V )

6 6
Input V oltag e (V )

5 5
4 M in. 4 M in.
3 3
2 2
1 1
0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (°C) Vcc Supply Voltage (V)

Figure 12A. Logic "1" (HO) & Logic “0” (LO) Figure 12B. Logic "1" (HO) & Logic “0” (LO)
& Inactive SD Input Voltage & Inactive SD Input Voltage
vs Temperature vs Voltage
4 4

3.2 3 .2
Input Voltage (V)

In p u t V o lta g e (V )

2.4 2 .4

1.6 1 .6
Max. M ax.
0.8 0 .8

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (°C) Vcc Supply Voltage (V)

Figure 13A. Logic "0" (HO) & Logic “1” (LO) Figure 13B. Logic "0" (HO) & Logic “1” (LO)
& Active SD Input Voltage & Active SD Input Voltage
vs Temperature vs Voltage

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 IR2104(S)

1 1

High Level Output Voltage (V)

High Level Output Voltage (V)

0 .8 0 .8

0 .6 0 .6

0 .4 0 .4

M ax. M ax.
0 .2 0 .2

0 0
-5 0 -2 5 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (°C) Vcc Supply Voltage (V)

Figure 14A. High Level Output Figure 14B. High Level Output vs Voltage
vs Temperature

1 1
Low Level Output Voltage (V)
Low Level Output Voltage (V)

0 .8 0 .8

0 .6 0 .6

0 .4 0 .4

0 .2 0 .2
M ax. M ax.

0 0
-5 0 -2 5 0 25 50 75 100 125 10 12 14 16 18 20

Temperature (°C) Vcc Supply Voltage (V)

Figure 15A. Low Level Output Figure 15B. Low level Output vs Voltage
vs Temperature
Offset Supply Leakage Current (µA)

Offset Supply Leakage Current (µA)

500 500

400 400

300 300

200 200

100 100
M ax. Max.

0 0
-5 0 -2 5 0 25 50 75 100 125 0 100 200 300 400 500 600
Temperature (°C) VB Boost Voltage (V)

Figure 16A. Offset Supply Current Figure 16B. Offset Supply Current
vs Temperature vs Voltage

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IR2104(S)

1 50 150
VBS Supply Current (µA)

VBS Supply Current (µA)

1 20 120

90 90

60 60
M ax . Max .

30 30

T yp . Ty p.
0 0
-50 -25 0 25 50 75 1 00 1 25 10 12 14 16 18 20
Temperature (°C) VBS Floating Supply Voltage (V)

Figure 17A. VBS Supply Current Figure 17B. VBS Supply Current
vs Temperature vs Voltage

700 700
Vcc Supply Current (µA)

Vcc Supply Current (µA)

600 600

500 500

400 400

300 M ax. 300

M ax.
200 200

100 Typ. 100

Typ.
0 0
-5 0 -2 5 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (°C) Vcc Supply Voltage (V)

Figure 18A. Vcc Supply Current Figure 18B. Vcc Supply Current vs Voltage
vs Temperature

30 30
Logic 1” Input Current (µA)

Logic 1” Input Current (µA)

25 25

20 20

15 15

10 10 M ax.
M ax.
5 5
Typ. Typ.

0 0
-5 0 -2 5 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (°C) Vcc Supply Voltage (V)

Figure 19A. Logic"1" Input Current Figure 19B. Logic"1" Input Current
vs Temperature vs Voltage

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 IR2104(S)

5 5

Logic "0" Input Current (uA)

Logic “0” Input Current (µA)

4 4

3 3

2 2
Max. Max.
1 1

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (°C) VCC Supply Voltage (V)

Figure 20A. Logic "0" Input Current Figure 20B. Logic "0" Input Current
vs Temperature vs Voltage

11 11
M ax.
VCC UVLO Threshold +(V)

VCC UVLO Threshold - (V)

10 10
Max.
Typ.
9 9
M in. Typ.
8 8

7 7 Min.

6 6
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Temperature (°C) Temperature (°C)

Figure 21A. Vcc Undervoltage Threshold(+) Figure 21B. Vcc Undervoltage Threshold(-)
vs Temperature vs Temperature

500 500
Output Source Current (mA)

Output Source Current (mA)

400 400

Typ.
300 300

200 200
T y p.
100 Min. 100
M in.
0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (°C) VBIAS Supply Voltage (V)

Figure 22A. Output Source Current Figure 22B. Output Source Current
vs Temperature vs Voltage

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IR2104(S)

7 00 70 0
6 00 60 0
Output Sink Current (mA)

Output Sink Current (mA)

5 00 T yp . 50 0
4 00 40 0
Ty p.
3 00 30 0
M in .
2 00 20 0
M in.
1 00 10 0
0 0
-50 -25 0 25 50 75 1 00 1 25 10 12 14 16 18 20
Temperature (°C) VBIAS Supply Voltage (V)

Figure 23A. Output Sink Current Figure 23B. Output Sink Current vs Voltage
vs Temperature

Case Outlines

01-6014
8 Lead PDIP 01-3003 01 (MS-001AB)

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 IR2104(S)

INCHES MILLIMETERS
D B DIM
MIN MAX MIN MAX
A 5 FOOTPRINT A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8X 0.72 [.028]
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E E .1497 .1574 3.80 4.00
0.25 [.010] A
1 2 3 4 6.46 [.255] e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
L .016 .050 0.40 1.27
6X e 3X 1.27 [.050] 8X 1.78 [.070] y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [.004]
A1 8X L 8X c
8X b
7
0.25 [.010] C A B

NOTES: 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

1. DIMENSIONING & TOLERANC ING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INC HES].
4. OUTLINE C ONFORMS TO JEDEC OUTLINE MS-012AA.
8 Lead SOIC
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
01-6027
01-0021 11 (MS-012AA)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 6/30/2003

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