BICOL STATE COLLEGE OF APPLIED SCIENCES AND TECHNOLOGY

City of Naga
COLLEGE OF ENGINEERING AND ARCHITECTURE

MIDTERM PROJECT IN
ELECTRONICS
CIRCUITS ANALYSIS
AND DESIGN

ANGELICA T. GENOVA

BS ECE 3A

ENGR. BENNYVIC JOYCE ESGUERRA

INSTRUCTOR
 CE-EMITTER STABILIZED BJT AMPLIFIER
The given situation was to design a CE- Emitter Stabilized BJT amplifier
with the following specifications: VCC = 12 V, β = 200, Zi = 10kΩ, rO = ∞ Ω, RL =
RC = 1 kΩ, and fC ≥ 1 kHz.

A NPN general-purpose transistor BC847B will be used with the

characteristics of Ic = 2 mA and VCE = 5 V.

12 V

RB 1 kΩ

Cc
1 kΩ
Vi CS
RE

Fig. 1.1 CE emitter-bias configuration.

DC Analysis:

Ic = IBẞ
IC 2 mA
IB = = = 10 μA
β 200
IE = (β + 1)IB = (200+1)(10 μA) = 2.01 mA
26 mV
re =
IE
26 mV
=
2.01 mA
re = 12.93532338 Ω

Applying Kirchhoff’s voltage law, different equations will be obtained.

VCC - IB RB - VBE - IE RE = 0 Equation 1

VCC - IC RC - VCE - IE RE = 0 Equation 2

Then substitute the values obtained to the first equation.

12 V − (10 μA)RB − 0.7 V − (2.01 mA)RE =0
 12 V − 0.7 V − (2.01 mA)RE
RB =
10 μA

Fig. 1.2 ac equivalent network.

The input impedance of a transistor with an unbypassed resistor RE is

determined by the equation below. Substitution of the equation of RB to the
formula of Zi will yield the value of RE .

Zi = RB ǁ β(re + RE )
12 V − 0.7 V − (2.01 mA)RE
10kΩ = ǁ 200(12.93532338 Ω + RE )
10 μA
RE = 37.51413112 Ω
12 V – 0.7 – (2.01 mA)(37.51413112 Ω)
RB =
10 μA
RB = 1.12245966 MΩ

Substituting the calculated values to the equation of the input impedance,

Zi , to verify that the values satisfied Zi = 10kΩ.

Zi = RB ǁ β(re + RE )

10kΩ = 1.12245966 MΩ ǁ 200(12.93532338 Ω + 37.51413112 Ω)

10kΩ = 10kΩ

The output impedance is given by

ZO = RC = 1 kΩ

ZO = 𝟏 𝐤𝛀

The voltage gain, AV , is measured. The negative sign in AV reveals a 180°

phase shift between the input and output, Vo and Vi .
 Vo RC ǁ RL
AV = – =–
Vi re + RE

1kΩ ǁ 1kΩ
AV = –
12.93532338 Ω + 37.51413112 Ω
AV = – 9.9110909939

Let CS and Cc be 10 nF and 0.15μF, respectively. Substituting the values

of the capacitors to the equations of fLS and fLC
will determine the cutoff frequency. (Note that Ri = Zi )
1
fLS =
2πRi CS

1
fLS =
2π(10 kΩ)(10 nF)
fLS = 1.591549431 kHz

1
fLC =
2π(RC + RL )CC

1
fLC =
2π(1 kΩ + 1 kΩ )(0.15 μF)
fLC = 530.516477Hz

Since fLS is higher than fLC , the bypass capacitor CS is determining the
lower cutoff frequency of the amplifier. The lower cut-off frequency is

fC = 1.591549431 kHz.

Fig. 1.3 Current probe measurements.

 The values of the base current, collector current, and emitter current were
showed in Figure 1.3. The figure also showed the structure and components for
the design of BJT amplifier using the transistor BC847B.

Fig. 1.4 Relationship of Vi (yellow) and VO (red).

The input voltage, Vi , and output voltage, VO , of the BJT amplifier

design were showed in Figure 1.4. The graph indicated that
VO has higher voltage compared to Vi .

In conclusion, the measured output voltage is higher than the input

voltage which resulted to a voltage gain.