600VCoolMOS™P6PowerTransistor

IPW60R041P6

1Description TO-247

CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.

Features
•IncreasedMOSFETdv/dtruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Drain
•Veryhighcommutationruggedness Pin 2
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 Gate
Pin 1
andJESD22)
Source
Pin 3

Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 41 mΩ
Qg.typ 170 nC
ID,pulse 267 A
Eoss@400V 20.5 µJ
Body diode di/dt 300 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPW60R041P6 PG-TO 247 6R041P6 see Appendix A

Final Data Sheet 2 Rev.2.0,2014-03-07

 600VCoolMOS™P6PowerTransistor

IPW60R041P6

2Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 77.5 TC=25°C
Continuous drain current 1) ID A
- - 49.0 TC=100°C
Pulsed drain current 2) ID,pulse - - 267 A TC=25°C
Avalanche energy, single pulse EAS - - 1954 mJ ID=13.4A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 2.96 mJ ID=13.4A; VDD=50V; see table 10
Avalanche current, repetitive IAR - - 13.4 A -
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation (Non FullPAK)
Ptot - - 481 W TC=25°C
TO-247
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque (Non FullPAK)
- - - 60 Ncm M3 and M3.5 screws
TO-247
Continuous diode forward current IS - - 67.2 A TC=25°C
Diode pulse current 2)
IS,pulse - - 267 A TC=25°C
VDS=0...400V,ISD<=IS,Tj=25°C
Reverse diode dv/dt 3) dv/dt - - 15 V/ns
see table 8
VDS=0...400V,ISD<=IS,Tj=25°C
Maximum diode commutation speed dif/dt - - 300 A/µs
see table 8

1)
Limited by Tj max. Maximum duty cycle D=0.75
2)
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet 4 Rev.2.0,2014-03-07
 600VCoolMOS™P6PowerTransistor

IPW60R041P6

3Thermalcharacteristics

Table3Thermalcharacteristics(NonFullPAK)TO-247
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.26 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Soldering temperature, wavesoldering
Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
only allowed at leads

Final Data Sheet 5 Rev.2.0,2014-03-07

 600VCoolMOS™P6PowerTransistor

IPW60R041P6

4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=2.96mA
- - 5 VDS=600,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 - VDS=600,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
- 0.037 0.041 VGS=10V,ID=35.5A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.096 - VGS=10V,ID=35.5A,Tj=150°C
Gate resistance RG - 1 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 8180 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 310 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
Co(er) - 260 - pF VGS=0V,VDS=0...400V
energy related 1)
Effective output capacitance,
Co(tr) - 1200 - pF ID=constant,VGS=0V,VDS=0...400V
time related 2)
VDD=400V,VGS=13V,ID=44.4A,
Turn-on delay time td(on) - 29 - ns
RG=1.7Ω;seetable9
VDD=400V,VGS=13V,ID=44.4A,
Rise time tr - 27 - ns
RG=1.7Ω;seetable9
VDD=400V,VGS=13V,ID=44.4A,
Turn-off delay time td(off) - 90 - ns
RG=1.7Ω;seetable9
VDD=400V,VGS=13V,ID=44.4A,
Fall time tf - 5 - ns
RG=1.7Ω;seetable9

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 50 - nC VDD=400V,ID=44.4A,VGS=0to10V
Gate to drain charge Qgd - 59 - nC VDD=400V,ID=44.4A,VGS=0to10V
Gate charge total Qg - 170 - nC VDD=400V,ID=44.4A,VGS=0to10V
Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=44.4A,VGS=0to10V

1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 6 Rev.2.0,2014-03-07
 600VCoolMOS™P6PowerTransistor

IPW60R041P6

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=44.4A,Tj=25°C
VR=400V,IF=44.4A,diF/dt=100A/µs;
Reverse recovery time trr - 630 - ns
see table 8
VR=400V,IF=44.4A,diF/dt=100A/µs;
Reverse recovery charge Qrr - 19 - µC
see table 8
VR=400V,IF=44.4A,diF/dt=100A/µs;
Peak reverse recovery current Irrm - 56 - A
see table 8

Final Data Sheet 7 Rev.2.0,2014-03-07

 600VCoolMOS™P6PowerTransistor

IPW60R041P6

5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
500 103

1 µs
450
10 µs
102
400 100 µs

350 1 ms
101
300 10 ms
Ptot[W]

ID[A]
250 100

200 DC

10-1
150

100
10-2
50

0 10-3
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100

1 µs
2
10 10 µs
100 µs 0.5

101 1 ms 10-1
0.2
10 ms
ZthJC[K/W]

0.1
ID[A]

100
DC 0.05

0.02
10-1 10-2
0.01
single pulse
10-2

10-3 10-3
100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 8 Rev.2.0,2014-03-07

 600VCoolMOS™P6PowerTransistor

IPW60R041P6

Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
280 170
20 V 160 20 V
10 V 10 V
150
240 8V
140
130
200 120
8V
110 7V

160 100
90
ID[A]

ID[A]
80
7V
120 70 6V
60
80 50
40
5.5 V
6V 30
40
20 5V
5.5 V
10
4.5 V 5V 4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.15 0.12

0.14 0.11

0.10
0.13
0.09
0.12
0.08
0.11 5.5 V 6V 0.07
6.5 V
RDS(on)[Ω]

RDS(on)[Ω]

7V
0.10 0.06
10 V
98% typ
0.09 0.05
20 V
0.04
0.08
0.03
0.07
0.02
0.06 0.01

0.05 0.00
0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=35.5A;VGS=10V

Final Data Sheet 9 Rev.2.0,2014-03-07

 600VCoolMOS™P6PowerTransistor

IPW60R041P6

Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
300 10

9
250 25 °C
8
120 V 480 V

7
200
6

VGS[V]
ID[A]

150 5
150 °C
4
100
3

2
50
1

0 0
0 2 4 6 8 10 12 14 0 50 100 150 200
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=44.4Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy
2
10 2000

1800

1600

1400
101
1200
EAS[mJ]

125 °C 25 °C
IF[A]

1000

800
100
600

400

200

10-1 0
0.0 0.5 1.0 1.5 2.0 25 50 75 100 125 150
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj EAS=f(Tj);ID=13.4A;VDD=50V

Final Data Sheet 10 Rev.2.0,2014-03-07

 600VCoolMOS™P6PowerTransistor

IPW60R041P6

Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances
700 105

680
Ciss
104
660

640
103
620
VBR(DSS)[V]

C[pF]
Coss
600
102
580

Crss
560
101

540

520 100
-75 -50 -25 0 25 50 75 100 125 150 175 0 100 200 300 400 500
Tj[°C] VDS[V]
VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz

Diagram15:Typ.Cossstoredenergy
28
26
24
22
20
18
16
Eoss[µJ]

14
12
10
8
6
4
2
0
0 100 200 300 400 500
VDS[V]
Eoss=f(VDS)

Final Data Sheet 11 Rev.2.0,2014-03-07

 600VCoolMOS™P6PowerTransistor

IPW60R041P6

6TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

V ,I
Rg1 VDS( peak)
VDS
VDS

VDS IF
trr
tF tS
Rg 2 dIF / dt
IF t
QF QS 10 %Irrm
IF dIrr / dt trr =tF +tS
Irrm Qrr = QF + QS
Rg1 = Rg 2

Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS
ID VDS VD

VDS VDS
ID

Final Data Sheet 12 Rev.2.0,2014-03-07

 DPG80C400HB

Fast Diode Ratings

Symbol Definition Conditions min. typ. max. Unit
VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C 400 V
VRRM max. repetitive reverse blocking voltage TVJ = 25°C 400 V
IR reverse current, drain current VR = 400 V TVJ = 25°C 1 µA
VR = 400 V TVJ = 150°C 0.4 mA
VF forward voltage drop IF = 40 A TVJ = 25°C 1.43 V
IF = 80 A 1.69 V
IF = 40 A TVJ = 150 °C 1.14 V
IF = 80 A 1.44 V
I FAV average forward current TC = 135°C T VJ = 175 °C 40 A
rectangular d = 0.5
VF0 threshold voltage TVJ = 175 °C 0.79 V
for power loss calculation only
rF slope resistance 7.1 mΩ
R thJC thermal resistance junction to case 0.7 K/W
R thCH thermal resistance case to heatsink 0.25 K/W
Ptot total power dissipation TC = 25°C 215 W
I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C 400 A
CJ junction capacitance VR = 200 V f = 1 MHz TVJ = 25°C 46 pF
I RM max. reverse recovery current TVJ = 25 °C 4 A
IF = 40 A; VR = 270 V TVJ = °C 8.5 A
t rr reverse recovery time -di F /dt = 200 A/µs TVJ = 25 °C 45 ns
TVJ = °C 80 ns

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a

© 2013 IXYS all rights reserved

 DPG80C400HB

Fast Diode
80 0.8 20
TVJ = 125°C
80 A
TVJ = 125°C 80 A
70 VR = 270 V
0.7 VR = 270 V 40 A
40 A 20 A
60 16
0.6
50 Qrr 20 A IRM
IF
40 0.5 12
TVJ = 150°C [μC]
[A] 30 [A]
0.4
20 8
25°C 0.3
10

0.2 4
0.0 0.4 0.8 1.2 1.6 2.0 0 200 400 600 0 200 400 600
VF [V] -diF /dt [A/μs] -diF /dt [A/μs]
Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. reverse recov. current
IF versus VF Qrr versus -diF /dt IRM versus -diF /dt

1.4 120 1000 15

TVJ = 125°C VFR
tfr
1.2 VR = 270 V
800 12
100
1.0

0.8 trr tfr 600 9

VFR
Kf 80
0.6 [ns] 400
[ns] 6 [V]
IRM
0.4 80 A
60
40 A 200 TVJ = 125°C 3
0.2 20 A VR = 270 V
Qrr
IF = 40 A
0.0 40 0 0
0 40 80 120 160 0 200 400 600 0 200 400 600
TVJ [°C] -diF /dt [A/μs] -diF /dt [A/μs]
Fig. 4 Typ. dynamic parameters Fig. 5 Typ. reverse recov. time Fig. 6 Typ. forward recovery voltage
Qrr, IRM versus TVJ trr versus -diF /dt VFR & time tfr versus diF /dt

25 0.8

20
0.6
IF = 80 A
15 40 A ZthJC
Erec 20 A 0.4
10 [K/W]
[μJ]
0.2
5
TVJ = 125°C
VR = 270 V
0 0.0
0 200 400 600 1 10 100 1000 10000
-diF /dt [A/μs] t [ms]
Fig. 7 Typ. recovery energy Fig. 8 Transient thermal impedance junction to case
Erec versus -diF /dt

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a

© 2013 IXYS all rights reserved

Power line chokes

Current-compensated ring core triple chokes

440/250 V AC, 31 A, 0.95 mH

Series/Type: B82747S6313N061
Date: July 2012
a~í~=pÜÉÉí

© EPCOS AG 2015. Reproduction, publication and dissemination of this publication, enclosures hereto and the
information contained therein without EPCOS' prior express consent is prohibited.

EPCOS AG is a TDK Group Company.

 Power line chokes B82747S6313N061
Current-compensated ring core triple chokes

Rated voltage 440/250 V AC

Rated current 31 A
Rated inductance 0.95 mH

Construction
■ Current-compensated ring core triple choke
■ Ferrite core
■ Polycarbonate base plate (UL 94 V-0)
■ Polyamide spacer (UL 94 V-0)
■ Choke fixed with PU compound (UL 94 V-0)
■ Sector winding
■ Clearance 3 mm, creepage distance 4 mm

Features
■ Approx. 0.5% stray inductance
for symmetrical interference suppression
■ Suitable for wave soldering
■ Design complies with EN 60938-2 (VDE 0565-2)
■ RoHS-compatible

Applications
■ Suppression of common-mode interferences
■ Switch-mode applications

Terminals
■ Ends of winding wires
■ Hot-dip tinned

Marking
Manufacturer, ordering code, rated current,
rated voltage, rated inductance,
date of manufacture (MM.YY)

Delivery mode
Cardboard box

Please read Cautions and warnings and

Important notes at the end of this document. 2 07/12
 Power line chokes B82747S6313N061
Current-compensated ring core triple chokes

Dimensional drawing and pin configuration

3.5±0.5 35 max.
120˚

˚
0
12
ø1

ø64 max.
2
ø2.8±0.1 6x

˚
18
1 4
5 6

120˚

20
2 5
1
IND0679-R-E 4 3 3 6

18 ˚

ø5
9
Dimensions in mm Marking
120
˚ IND0769-F-E

Technical data and measuring conditions

Rated voltage VR 440/250 V AC (50/60 Hz)

Test voltage Vtest 2000 V AC / 2800 V DC, 2 s (line/line)
Rated temperature TR +70 C
Rated current IR Referred to 50 Hz and rated temperature
Rated inductance LR Measured with Agilent 4284A at 100 kHz, 0.1 mA,
+20 °C Inductance is specified per winding.
Inductance tolerance 30% at +20 °C
Inductance decreaseL/L0 < 10% at DC magnetic bias with IR, 20 °C
Stray inductance Lstray,typ Measured with Agilent 4284A at 100 kHz, 5 mA, +20 °C,
typical value
DC resistance Rtyp Measured at +20 °C, typical value, specified per winding
Solderability (lead-free) Sn96.5Ag3.0Cu0.5: +(245 5) °C, (3 0.3) s
Wetting of soldering area 95%
(to IEC 60068-2-20, test Ta)
Resistance to soldering heat +(260 5) °C, (10 1) s
(wave soldering) (to IEC 60068-2-20, test Tb)
Climatic category 40/125/56 (to IEC 60068-1)
Storage conditions (packaged) –25 °C … +40 °C, 75% RH
Weight Approx. 220 g

Please read Cautions and warnings and

Important notes at the end of this document. 3 07/12
 Power line chokes B82747S6313N061
Current-compensated ring core triple chokes

Characteristics and ordering code

IR LR Lstray,typ Rtyp Ordering code

A mH H m
31 0.95 5 1.5 B82747S6313N061

Impedance |Z| versus frequency f Current derating Iop/IR

measured with windings in parallel at +20 °C, versus ambient temperature TA
typical value
IND0793-L IND0792-V-E
106 1.4
Ω B82747S6313N061 I op
|Z| I R 1.2
105
1.0 TR = 70 ˚C

104
0.8

0.6
103

0.4
102
0.2

101 4 0
10 10 5 10 6 Hz 10 7 0 20 40 60 80 100 ˚C 140
f TA

Please read Cautions and warnings and

Important notes at the end of this document. 4 07/12
 Cautions and warnings

■ Please note the recommendations in our Inductors data book (latest edition) and in the data
sheets.
– Particular attention should be paid to the derating curves given there. Derating must be applied
in case the ambient temperature in the application exceeds the rated temperature of the
component.
– Ensure the operation temperature (which is the sum of the ambient temperature and the
temperature rise caused by losses / self-heating) of the component in the application does not
exceed the maximum value specified in the climatic category.
– The soldering conditions should also be observed. Temperatures quoted in relation to wave
soldering refer to the pin, not the housing.
■ If the components are to be washed varnished it is necessary to check whether the washing
varnish agent that is used has a negative effect on the wire insulation, any plastics that are used,
or on glued joints. In particular, it is possible for washing varnish agent residues to have a
negative effect in the long-term on wire insulation.
Washing processes may damage the product due to the possible static or cyclic mechanical
loads (e.g. ultrasonic cleaning). They may cause cracks to develop on the product and its parts,
which might lead to reduced reliability or lifetime.
■ The following points must be observed if the components are potted in customer applications:
– Many potting materials shrink as they harden. They therefore exert a pressure on the plastic
housing or core. This pressure can have a deleterious effect on electrical properties, and in
extreme cases can damage the core or plastic housing mechanically.
– It is necessary to check whether the potting material used attacks or destroys the wire
insulation, plastics or glue.
– The effect of the potting material can change the high-frequency behaviour of the components.
■ Ferrites are sensitive to direct impact. This can cause the core material to flake, or lead to
breakage of the core.
■ Even for customer-specific products, conclusive validation of the component in the circuit can
only be carried out by the customer.

Please read Cautions and warnings and

Important notes at the end of this document. 5 07/12
 Important notes

The following applies to all products named in this publication:

1. Some parts of this publication contain statements about the suitability of our products for
certain areas of application. These statements are based on our knowledge of typical
requirements that are often placed on our products in the areas of application concerned. We
nevertheless expressly point out that such statements cannot be regarded as binding
statements about the suitability of our products for a particular customer application. As
a rule, EPCOS is either unfamiliar with individual customer applications or less familiar with them
than the customers themselves. For these reasons, it is always ultimately incumbent on the
customer to check and decide whether an EPCOS product with the properties described in the
product specification is suitable for use in a particular customer application.

2. We also point out that in individual cases, a malfunction of electronic components or

failure before the end of their usual service life cannot be completely ruled out in the
current state of the art, even if they are operated as specified. In customer applications
requiring a very high level of operational safety and especially in customer applications in which
the malfunction or failure of an electronic component could endanger human life or health (e.g.
in accident prevention or life-saving systems), it must therefore be ensured by means of suitable
design of the customer application or other action taken by the customer (e.g. installation of
protective circuitry or redundancy) that no injury or damage is sustained by third parties in the
event of malfunction or failure of an electronic component.

3. The warnings, cautions and product-specific notes must be observed.

4. In order to satisfy certain technical requirements, some of the products described in this
publication may contain substances subject to restrictions in certain jurisdictions (e.g.
because they are classed as hazardous). Useful information on this will be found in our
Material Data Sheets on the Internet (www.epcos.com/material). Should you have any more
detailed questions, please contact our sales offices.

5. We constantly strive to improve our products. Consequently, the products described in this
publication may change from time to time. The same is true of the corresponding product
specifications. Please check therefore to what extent product descriptions and specifications
contained in this publication are still applicable before or when you place an order.

We also reserve the right to discontinue production and delivery of products.

Consequently, we cannot guarantee that all products named in this publication will always be
available. The aforementioned does not apply in the case of individual agreements deviating
from the foregoing for customer-specific products.

6. Unless otherwise agreed in individual contracts, all orders are subject to the current version
of the “General Terms of Delivery for Products and Services in the Electrical Industry”
published by the German Electrical and Electronics Industry Association (ZVEI).

7. The trade names EPCOS, BAOKE, Alu-X, CeraDiode, CeraLink, CSMP, CSSP, CTVS,
DeltaCap, DigiSiMic, DSSP, FilterCap, FormFit, MiniBlue, MiniCell, MKD, MKK, MLSC,
MotorCap, PCC, PhaseCap, PhaseCube, PhaseMod, PhiCap, SIFERRIT, SIFI, SIKOREL,
SilverCap, SIMDAD, SiMic, SIMID, SineFormer, SIOV, SIP5D, SIP5K, ThermoFuse, WindCap
are trademarks registered or pending in Europe and in other countries. Further information will
be found on the Internet at www.epcos.com/trademarks.

6 07/12
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

EPCOS:
B82747S6313N061
 606PHC250KS
HIGH FREQUENCY/ SWITCHING
Parts are RoHS compliant

APPLICATIONS: industrial controls, Motor speed controls, Resonant circuits, induction heaters,
Electronic ballasts, Audio, SMPS

ELECTRICAL SPECIFICATIONS
Capacitance: 60 uF
Dissipation Factor: 0.0015 Max at 1000 Hz and 25°C
Temperature Coefficient: -200 PPM/°C: -100 PPM/°C, 100 PPM/°C
Ripple Current: 14 A at 100 kHz and 70°C
ESR: 3.5 milliOhms (typical) at 100 kHz and 25°C
Self Inductance: 1 Nanohenries maximum per mm of body length and lead length
dvdt: 15 V/µs

Tolerance: -10 % , +10 %

Temperature Range: -40°C to +85°C
Above 85°C the rated (DC/AC) voltage must be derated at per N/A°C
WVDC: 250 Volts DC
SVDC: 400 Volts DC
VAC: 160 Volts AC

Terminal to Terminal Dielectric strength: 2 times the rated DC voltage when applied between the
terminals for 10 seconds

Terminal to case Dielectric strength: 3000 VAC when applied between the terminals and case for 60
seconds

Insulation Resistance (Terminal to Terminal): 30000 MINIMUM after 100 Volts DC is applied for 60
seconds at 20°C
Reliability: 300 failures/billion component hours
Load Life: 100000 hours at 70°C with 100% of rated voltage
Capacitance Change: 0 of initially measured value
D.F. Change: 0 of maximum specified value
I.R. Change: 0 of minimum specified value
 650VCoolMOS™C7PowerTransistor

IPZ65R045C7

1Description PG-TO247-4

CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.

CoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.Theproductportfolio
providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering
betterefficiency,reducedgatecharge,easyimplementationand
outstandingreliability.

Features
•IncreasedMOSFETdv/dtruggedness
•BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•Easytouse/driveduetodriversourcepinforbettercontrolofthegate.
•Pb-freeplating,halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)

Benefits
•Enablinghighersystemefficiency
•Enablinghigherfrequency/increasedpowerdensitysolutions
•Systemcost/sizesavingsduetoreducedcoolingrequirements
•Highersystemreliabilityduetoloweroperatingtemperatures

Applications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,
Telecom,UPSandSolar.

Pleasenote:Thesourceandsensesourcepinsarenotexchangeable.
Theirexchangemightleadtomalfunction.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 700 V
RDS(on),max 45 mΩ
Qg.typ 93 nC
ID,pulse 212 A
Eoss@400V 11.7 µJ
Body diode di/dt 60 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPZ65R045C7 PG-TO 247-4 65C7045 see Appendix A

Final Data Sheet 2 Rev.2.0,2013-04-30

 650VCoolMOS™C7PowerTransistor

IPZ65R045C7

2Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 46 TC=25°C
Continuous drain current 1) ID A
- - 29 TC=100°C
Pulsed drain current 2) ID,pulse - - 212 A TC=25°C
Avalanche energy, single pulse EAS - - 249 mJ ID=12A; VDD=50V
Avalanche energy, repetitive EAR - - 1.25 mJ ID=12A; VDD=50V
Avalanche current, single pulse IAS - - 12.0 A -
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 227 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque - - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current IS - - 46 A TC=25°C
Diode pulse current2) IS,pulse - - 212 A TC=25°C
Reverse diode dv/dt 3)
dv/dt - - 1.5 V/ns VDS=0...400V,ISD<=IS,Tj=25°C
Maximum diode commutation speed dif/dt - - 60 A/µs VDS=0...400V,ISD<=IS,Tj=25°C
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1)
Limited by Tj max.
2)
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet 4 Rev.2.0,2013-04-30
 650VCoolMOS™C7PowerTransistor

IPZ65R045C7

3Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.55 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Thermal resistance, junction - ambient
RthJA - - - °C/W n.a.
for SMD version
Soldering temperature, wavesoldering 1.6mm (0.063 in.) from case for
Tsold - - 260 °C
only allowed at leads 10s

Final Data Sheet 5 Rev.2.0,2013-04-30

 650VCoolMOS™C7PowerTransistor

IPZ65R045C7

4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=1.25mA
- - 2 VDS=650,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 20 - VDS=650,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
- 0.040 0.045 VGS=10V,ID=24.9A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.096 - VGS=10V,ID=24.9A,Tj=150°C
Gate resistance RG - 0.85 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 4340 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 70 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
Co(er) - 146 - pF VGS=0V,VDS=0...400V
related 1)
Effective output capacitance, time related
Co(tr) - 1630 - pF ID=constant,VGS=0V,VDS=0...400V
2)

VDD=400V,VGS=13V,ID=24.9A,
Turn-on delay time td(on) - 20 - ns
RG=3.3Ω
VDD=400V,VGS=13V,ID=24.9A,
Rise time tr - 14 - ns
RG=3.3Ω
VDD=400V,VGS=13V,ID=24.9A,
Turn-off delay time td(off) - 82 - ns
RG=3.3Ω
VDD=400V,VGS=13V,ID=24.9A,
Fall time tf - 7 - ns
RG=3.3Ω

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 23 - nC VDD=400V,ID=24.9A,VGS=0to10V
Gate to drain charge Qgd - 30 - nC VDD=400V,ID=24.9A,VGS=0to10V
Gate charge total Qg - 93 - nC VDD=400V,ID=24.9A,VGS=0to10V
Gate plateau voltage Vplateau - 5.4 - V VDD=400V,ID=24.9A,VGS=0to10V

1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 6 Rev.2.0,2013-04-30
 650VCoolMOS™C7PowerTransistor

IPZ65R045C7

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=24.9A,Tj=25°C
Reverse recovery time trr - 725 - ns VR=400V,IF=46A,diF/dt=60A/µs
Reverse recovery charge Qrr - 13 - µC VR=400V,IF=46A,diF/dt=60A/µs
Peak reverse recovery current Irrm - 36 - A VR=400V,IF=46A,diF/dt=60A/µs

Final Data Sheet 7 Rev.2.0,2013-04-30

 650VCoolMOS™C7PowerTransistor

IPZ65R045C7

5Electricalcharacteristicsdiagrams

Table8
Diagram1:Powerdissipation Diagram2:Safeoperatingarea
250 103

100 µs 10 µs 1 µs
1 ms
102 10 ms
200

DC
101
150
Ptot[W]

ID[A]
100

100
10-1

50
10-2

0 10-3
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Table9
Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100

100 µs 10 µs 1 µs
2 1 ms
10
10 ms
0.5
DC
101
ZthJC[K/W]

0.2
ID[A]

0 -1
10 10
0.1

10-1 0.05

0.02
10-2 0.01

single pulse
10-3 10-2
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 8 Rev.2.0,2013-04-30

 650VCoolMOS™C7PowerTransistor

IPZ65R045C7

Table10
Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
250 160

20 V 140 20 V
10 V
200 10 V
8V 8V
120 7V

7V
100
150 6V
ID[A]

ID[A]
80

100
60 5.5 V

6V
40
50 5V
5.5 V
20
5V 4.5 V
4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Table11
Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.17 0.12
5.5 V 6V 6.5 V 7V
0.16 0.11

0.15 0.10
20 V
0.14 0.09

10 V
0.13 0.08
RDS(on)[Ω]

RDS(on)[Ω]

0.12 0.07
98%

0.11 0.06 typ

0.10 0.05

0.09 0.04

0.08 0.03

0.07 0.02
0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=24.9A;VGS=10V

Final Data Sheet 9 Rev.2.0,2013-04-30

 650VCoolMOS™C7PowerTransistor

IPZ65R045C7

Table12
Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
250 12
120 V
400 V

25 °C 10
200

8
150

VGS[V]
ID[A]

6
150 °C
100
4

50
2

0 0
0 2 4 6 8 10 12 0 20 40 60 80 100 120
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=24.9Apulsed;parameter:VDD

Table13
Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy
2
10 250

225

200

125 °C 175
101 25 °C

150
EAS[mJ]
IF[A]

125

100
100
75

50

25

10-1 0
0.0 0.5 1.0 1.5 25 50 75 100 125 150
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj EAS=f(Tj);ID=12A;VDD=50V

Final Data Sheet 10 Rev.2.0,2013-04-30

 650VCoolMOS™C7PowerTransistor

IPZ65R045C7

Table14
Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances
760 105

740

104
720 Ciss

700
103
680
VBR(DSS)[V]

C[pF]
660 Coss
102
640

620
101
Crss
600

580 100
-60 -20 20 60 100 140 180 0 100 200 300 400 500
Tj[°C] VDS[V]
VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz

Table15
Diagram15:Typ.Cossstoredenergy
16

14

12

10
Eoss[µJ]

0
0 100 200 300 400 500
VDS[V]
Eoss=f(VDS)

Final Data Sheet 11 Rev.2.0,2013-04-30

 650VCoolMOS™C7PowerTransistor

IPZ65R045C7

6TestCircuits

Table16Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

V ,I
Rg1 VDS( peak)
VDS
VDS

VDS IF
trr
tF tS
Rg 2 dIF / dt
IF t
QF QS 10 %Irrm
IF dIrr / dt trr =tF +tS
Irrm Qrr = QF + QS
Rg1 = Rg 2

Table17switchingtimes(ss)
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table18Unclampedinductiveload(ss)
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS

ID VD
VDS

VDS VDS
ID

Final Data Sheet 12 Rev.2.0,2013-04-30

 IDH12SG60C

3rd Generation thinQ!TM SiC Schottky Diode

Features Product Summary
• Revolutionary semiconductor material - Silicon Carbide
VDC 600 V
• Switching behavior benchmark
QC 19 nC
• No reverse recovery / No forward recovery
• Temperature independent switching behavior IF; TC< 130 °C 12 A
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF

thinQ! 3G Diode designed for fast switching applications like:

• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS

Type Package Marking Pin 1 Pin 2

IDH12SG60C PG-TO220-2 D12G60C C A

Maximum ratings

Parameter Symbol Conditions Value Unit

Continuous forward current IF T C<130 °C 12 A

Surge non-repetitive forward current, I F,SM T C=25 °C, t p=10 ms 59

sine halfwave T C=150 °C, t p=10 ms 51

Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 430

∫i 2dt T C=25 °C, t p=10 ms 17 A2s

i ²t value
T C=150 °C, t p=10 ms 12

Repetitive peak reverse voltage V RRM T j=25 °C 600 V

Diode dv/dt ruggedness dv/ dt VR= 0….480 V 50 V/ns

Power dissipation P tot T C=25 °C 125 W

Operating and storage temperature T j, T stg -55 ... 175 °C

Soldering temperature, 1.6mm (0.063 in.)
T sold 260
wavesoldering only allowed at leads from case for 10s
Mounting torque M3 and M3.5 screws 60 Ncm

Rev. 2.3 page 1 2013-02-11

 IDH12SG60C

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 1.2 K/W

Thermal resistance,
Thermal resistance,
R thJA junction- ambient, - - 62
junction - ambient
leaded

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

DC blocking voltage V DC I R=0.05 mA, T j=25 °C 600 - - V

Diode forward voltage VF I F=12 A, T j=25 °C - 1.8 2.1

I F=12 A, T j=150 °C - 2.2 -

Reverse current IR V R=600 V, T j=25 °C - 1 100 µA

V R=600 V, T j=150 °C - 4 1000

AC characteristics

Total capacitive charge Qc V R=400 V,I F≤I F,max, - 19 - nC

di F/dt =200 A/µs,
Switching time3) tc T j=150 °C - - <10 ns

Total capacitance C V R=1 V, f =1 MHz - 310 - pF

V R=300 V, f =1 MHz - 50 -

V R=600 V, f =1 MHz - 50 -

1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
3)
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due
to absence of minority carrier injection.
4)
Under worst case Zth conditions.
5)
Only capacitive charge occuring, guaranteed by design.

Rev. 2.3 page 2 2013-02-11

 IDH12SG60C
1 Power dissipation 2 Diode forward current
P tot=f(T C); parameter: RthJC(max) I F=f(T C)4); T j≤175 °C; parameter: D = t p/T

130 140

120

110 120

100
0.1
90 100

80
80
70
Ptot [W]

IF [A]
60
60 0.3
50
0.5
40
40 0.7
30
1
20
20
10

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
0.1
TC [°C] TC [°C]
0.3
0.5
0.7
1

3 Typ. forward characteristic 4 Typ. forward characteristic in surge current

mode
I F=f(VF); t p=400 µs; parameter:T j I F=f(VF); t p=400 µs; parameter: T j

20 80
-55 °C
25 °C

100 °C

15 60 -55 °C
150 °C

25 °C
IF [A]
IF [A]

10 40
175 °C

100 °C

5 20 150 °C

175 °C

0 0
0 1 2 3 4 0 2 4 6 8

VF[V] VF [V]

Rev. 2.3 page 3 2013-02-11

 IDH12SG60C
5 Typ. capacitance charge vs. current slope 6 Typ. reverse current vs. reverse voltage
5)
Q C=f(di F/dt ) ; I F≤I F,max I R=f(VR); parameter: T j

20 101

15 100
Qc[nC]

IR [µA]
10 10-1

175 °C

5 10-2 150 °C

100 °C

25 °C -55°C

0 10-3
100 400 700 1000 100 200 300 400 500 600

diF/dt [A/µs] VR [V]

7 Typ. transient thermal impedance 8 Typ. capacitance vs. reverse voltage

Z thJC=f(t p); parameter: D = t P/T C =f(V R); T C=25 °C, f =1 MHz

101 400

350

100 300

0.5

250
0.2
ZthJC [K/W]

0.1
C [pF]

10-1 200
0.05

0.02
150
0.01

0
10-2 100

50

10-3 0
10-6 10-5 10-4 10-3 10-2 10-1 100 10-1 100 101 102 103
tP [s] VR [V]

Rev. 2.3 page 4 2013-02-11

 IDH12SG60C
9 Typ. C stored energy
E C=f(V R)

10

6
Ec [µJ]

0
0 200 400 600

VR [V]

Rev. 2.3 page 5 2013-02-11

 IDW30G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode

thinQ!TM SiC Schottky Diode

1
Features:
2 CASE

Revolutionary semiconductor material - Silicon Carbide 3

No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
1)
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant

Benefits

System efficiency improvement over Si diodes

Enabling higher frequency / increased power density solutions
System size/cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
RelatedLinks: www.infineon.com/sic

Applications

Solar inverters
Uninterruptable power supplies
Motor drives
Power Factor Correction

Package pin definitions

Pin 1 – anode 1
Pin 2 and backside – cathode
Pin 3 – anode 2

Key Performance and Package Parameters (leg/device)

Type VDC IF QC Tj,max Marking Package

IDW30G120C5B 1200 V 15 / 30 A 77 / 154 nC 175°C D3012B5 PG-TO247-3

1) J-STD20 and JESD22

Final Data Sheet 2 Rev. 2.0, 2014-06-10

 IDW30G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode

Maximum ratings

Parameter Symbol Value (leg/device) Unit

Repetitive peak reverse voltage VRRM 1200 V

Continuous forward current for Rth(j-c,max)

TC = 150°C, D=1 15 / 30
IF A
TC = 135°C, D=1 20 / 40
TC = 25°C, D=1 44 / 87
Surge non-repetitive forward current, sine halfwave
TC=25°C, tp=10ms IF,SM 120 / 240 A
TC=150°C, tp=10ms 115 / 230
Non-repetitive peak forward current
IF,max 1230 / 2460 A
TC = 25°C, tp=10 µs
i²t value
TC = 25°C, tp=10 ms ∫ i²dt 72 / 288 A²s
TC = 150°C, tp=10 ms 66 / 264
Diode dv/dt ruggedness
dv/dt 80 V/ns
VR=0...960 V
Power dissipation for Rth(j-c,max)
Ptot 166 / 332 W
TC = 25°C
Operating and storage temperature Tj;Tstg -55…175 °C

Soldering temperature,
wavesoldering only allowed at leads Tsold 260 °C
1.6mm (0.063 in.) from case for 10 s
Mounting torque
M 0.7 Nm
M3 and M4 screws

Thermal Resistances
Value (leg/device)
Parameter Symbol Conditions Unit
min. typ. max.
Characteristic
Diode thermal resistance,
Rth(j-c) - 0.7/0.35 0.9/0.5 K/W
junction – case
Thermal resistance,
Rth(j-a) leaded - - 62 K/W
junction – ambient

Final Data Sheet 4 Rev. 2.0, 2014-06-10

 IDW30G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode

Electrical Characteristics

Static Characteristic, at Tj=25°C, unless otherwise specified

Value (leg/device)
Parameter Symbol Conditions Unit
min. typ. max.
DC blocking voltage VDC Tj = 25°C 1200 - - V
IF= 15/30 A, Tj=25°C - 1.4 1.65
Diode forward voltage VF V
IF= 15/30 A, Tj=150°C - 1.7 2.30
VR=1200 V, Tj=25°C 9 / 17 124 / 248
Reverse current IR µA
VR=1200 V, Tj=150°C 44 / 88 640 / 1280

Dynamic Characteristics, at Tj=25°C, unless otherwise specified

Value (leg/device)
Parameter Symbol Conditions Unit
min. typ. max.
Total capacitive charge VR = 800V, Tj=150° C & 25°C
VR
QC - 77 / 154 - nC
QC C (V )dV
0

VR=1 V, f=1 MHz - 990 /1980 -

Total Capacitance C VR=400 V, f=1 MHz - 70 / 140 - pF
VR=800 V, f=1 MHz - 55 / 111 -

Final Data Sheet 5 Rev. 2.0, 2014-06-10

 IDW30G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode

Electrical Characteristics diagrams

180 160
Per leg Per leg D= 0.10
160 140 D= 0.30

D= 0.50
140 120 D= 0.70

120 D= 1.00
100
100

IF [A]
80
P [W]

80
60
60
40
40

20 20

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
Tc [°C] Tc [°C]

Figure 1. Power dissipation per leg as function Figure 2. Diode forward current per leg as function
of case temperature, Ptot=f(TC), of temperature, parameter: Tj≤175°C, Rth(j-c),max,
Rth(j-c),max D=duty cycle, Vth, Rdiff @ Tj=175°C

30
Per leg 140 Per leg
-55 C -55 C
25
120
25 C
25 C
20 100
100 C 100 C
80
IF [A]

IF [A]

15 150 C

60
10 175 C
40
150 C
5
20
175 C

0 0
0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 6
VF [V] VF [V]
Figure 3. Typical forward characteristics per leg, Figure 4. Typical forward characteristics in surge
IF=f(VF), tp= 10 µs, parameter: Tj current per leg, IF=f(VF), tp= 10 µs,
parameter: Tj

Final Data Sheet 6 Rev. 2.0, 2014-06-10

 IDW30G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode

90 1.E-04

80 Per leg

70 1.E-05
Per leg
60
1.E-06
50
QC [nC]

IR [A]
40 175 C
1.E-07
30
150 C
20 1.E-08
100 C -55 C
10 25 C

0 1.E-09
100 400 700 1000 200 400 600 800 1000 1200
dIF/dt [A/µs] VR [V]

Figure 5. Typical capacitive charge per leg as

1
function of current slope , QC=f(dIF/dt), Tj=150°C Figure 6. Typical reverse characteristics per leg,
1) guaranteed by design. IR=f(VR), parameter: Tj

1400
Per leg
Per leg 1200

1000
1
Zthjc [K/W]

800
C [pF]

D= 0.50
600
D= 0.20
0.1 D= 0.10 400
D= 0.05

D= 0.02

D= 0.01
200
Single Pulse

0
0.01 0 1 10 100 1000
1E-6 1E-3 1E0
tp [s] VR [V]

Figure 7. Max. transient thermal impedance per leg, Figure 8. Typical capacitance per leg as function of
Zth,j-c=f(tP), parameter: D=tP/T reverse voltage, C=f(VR); Tj=25°C; f=1 MHz

Final Data Sheet 7 Rev. 2.0, 2014-06-10

 IDW30G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode

50
45
Per leg
40
35
30
EC [µJ]

25
20
15
10
5
0
0 200 400 600 800 1000 1200
VR [V]

Figure 9. Typical capacitively stored energy as

function of reverse voltage, per leg, EC=f(VR)

Final Data Sheet 8 Rev. 2.0, 2014-06-10

 AC Line Filters
SC Coils, SC-J Terminal Base Type

Overview Applications
The KEMET SC Coils, SC-J Terminal Base Type AC • Consumer Electronics
line filters are offered in a wide variety of sizes and • Common mode choke
specifications.

Common mode

Benefits

Terminal Base Type

• Wide variety of sizes and specifications
• Inductances up to 8 mH
• Rated Currents up to 18 A
• DC Resistances as low as 7 mΩ

t]]

ance DC resistance Temperature Finished dimensions(mm) Weight

Wire size
H) (m!/line) rise(K) approx.
OD(max.) T(max.) H(max.) a b (mmø)
n. max. max. (g)
Part 100
Number System 40 25 20 27 10 15 0.6 15
110 40 25 20 27 10 15 0.6 15
SC- 10- 20 J
110 40 25 20 27 10 15 0.6 16
Series Rated Current (A) Minimum Inductance (mH) Terminal Base Type
120 40 25 20 27 10 15 0.6 20
50 SC- 40 0x- = x A (e.g., 02-
25 = 2 A) 20 x0 =
27 x mH (e.g., 20
10 15 = 2 mH) 0.8 20J
x0- = x0 A (e.g., 10- = 10 A) xx = x.x mH (e.g., 15 = 1.5 mH)
70 40 xx- = xx A (e.g.,3415- = 15 A) 23 0x33 18 05 = 16
= 0.x mH (e.g., 0.5 mH) 0.8 25
70 55 Note: Code 05 34 can equal 5 A as23
well as 4 A 33 18 16 0.8 30
80 60 34 23 33 18 16 0.8 32
90 60 34 23 33 18 16 0.8 42
20 40 34 23 33 12 17 1.3 42
22 50 42 29 44 18 22 1.4 70
30 75 34 24 33 18 16 1.2 65
5 18 50 42 29 44 18 22 1.5 70
5 8 60 34 23 33 18 16 1.5 40
12 55 44 30 44 18 22 1.7 75
One world. One KEMET
5 7 50 44 30 44 18 22 1.8 60
© KEMET Electronics Corporation • P.O. Box 5928 • Greenville, SC 29606 • 864-963-6300 • www.kemet.com LF0006_SC-J • 3/28/2017 1
tanding voltage: AC 2400V (2 sec between lines)
than 100M! (between lines) • Thermal class: A (105˚C) or *E (120˚C)
toDownloaded
T (T=105–temperature
from Arrow.com. rise *T=120–temperature rise)
 AC Line Filters – SC Coils, SC-J Terminal Base Type

Dimensions – Millimeters
OD T
H

5.0±2.0

(b)
(a)
(a ) (b )

Environmental Compliance
All KEMET AC Line Filters are RoHS Compliant.

RoHS Compliant

Table 1 – Ratings & Part Number Reference

DC
Rated Inductance Temperature Finished Dimensions (mm) Wire
Part Resistance/ Weight (g)
Current (mH) Rise (K) Diameter
Number Line (mΩ) Approximate
AC (A) Minimum Maximum (Maximum)
OD T H
a b (mm)
Maximum (Maximum) (Maximum)
SC-02-10J 1
2 1 100 40 25 20 27 10 15 0.6 15
SC-02-20J1 2 2 110 40 25 20 27 10 15 0.6 15
SC-02-30J1 2 3 110 40 25 20 27 10 15 0.6 16
SC-02-50J1 2 5 120 40 25 20 27 10 15 0.6 20
SC-05-10J1 5 1 50 40 25 20 27 10 15 0.8 20
SC-05-20J1 5 2 70 40 34 23 33 18 16 0.8 25
SC-05-30J1 5 3 70 55 34 23 33 18 16 0.8 30
SC-05-50J1 4 5 80 60 34 23 33 18 16 0.8 32
SC-05-80J1 4 8 90 60 34 23 33 18 16 0.8 42
SC-10-10J 2 10 1 20 40 34 23 33 12 17 1.3 42
SC-10-20J2 10 2 22 50 42 29 44 18 22 1.4 70
SC-10-30J1 10 3 30 75 34 24 33 18 16 1.2 65
SC-12-15J2 12 1.5 18 50 42 29 44 18 22 1.5 70
SC-15-05J1 15 0.5 8 60 34 23 33 18 16 1.5 40
SC-15-10J2 15 1 12 55 44 30 44 18 22 1.7 75
SC-18-05J2 18 0.5 7 50 44 30 44 18 22 1.8 60
1
Thermal Class E (120°C)
2
Thermal Class A (105°C)

© KEMET Electronics Corporation • P.O. Box 5928 • Greenville, SC 29606 • 864-963-6300 • www.kemet.com LF0006_SC-J • 3/28/2017 2

Downloaded from Arrow.com.

 SC-12-15J 12 1.5 18 50 42 29 44 18 22 1.5 70
SC-15-05J ※ 15 0.5 8 60 34 23 33 18 16 1.5 40
SC-15-10J 15 1 12 55 44 30 44 18 22 1.7 75
SC-18-05J 18 0.5 7 50 44 30 44 18 22 1.8 60
• Rated voltage: 250VAC/VDC • Withstanding voltage: AC 2400V (2 sec between lines)
• Insulation resistance: at 500VDC, more than 100M! (between lines) • Thermal class: A (105˚C) or *E (120˚C)
AC• Operating
Line Filterstemperature
– SC Coils,range
SC-J(˚C):
Terminal
–25 toBase Type
T (T=105–temperature rise *T=120–temperature rise)
• Inductance measurement condition:100kHz, 1mA, KC547

Specifications
Shape and Dimensions

ODItem T SC-J
Rated Voltage 250 VAC/VDC
Withstanding Voltage 2,400 V (2 seconds, between lines)
Insulation Resistance > 100 MΩ at 500 VDC (between lines)
Thermal Class
H

A (105°C) or E (120°C), see Table 1 footnotes

(b)
5.0±2.0

−25°C T = 105 – temperature rise (Thermal Class A)

Operating Temperature Range
to T T = 120 – temperature rise (Thermal Class E)
(a)
Inductance Measurement Condition 100 kHz, 1 mA, KC547
(a) (b)

[mm]

Frequency Characteristics
Frequency characteristic

1M 1 1M 1
6 6
3 3 05-80J
100K 1 100K 1
6 6 10-30J
3 02-50J 3 05-50J
Impedance (!)
Impedance (!)

10K 1 10K 1
6 6 05-30J
3 3
02-30J
1K 1 1K 1
6 6

Common mode
100
3
1
02-10J 3
100 1
6 6 05-10J
3 3
10 1 02-20J 10 1 05-20J
6 6
3 3
1 3 6 1 3 6 1 3 6 1 3 6 1 3 1 3 6 1 3 6 1 3 6 1 3 6 1 3

10K 1K 100K 1M 10M 30M 1K 10K 100K 1M 10M 30M

Frequency characteristic Frequency (Hz) Frequency (Hz)

1M 1
6
3
100K 1 10-20J
6
AC Line Filters 3
Impedance (!)

10K 1
14 6
3
12-15J

1K 1
6
10-10J
3 15-05J
100 1
6
3 18-05J
10 1
6 15-10J
3
1 3 6 1 3 6 1 3 6 1 3 6 1 3
1K 10K 100K 1M 10M 30M
Frequency (Hz)

Notes on Use
Shelf Life
• Use within 6 months. If the product is used after a storage period of 6 months or longer, confirm its solderability
before use.

Storage Condition
• Avoid storage in high temperature and high humidity environment, as such condition may deteriorate the solderability
of external electrode.
• Avoid storage in atmosphere containing toxic gases or acid (e.g., sulphur and chlorine), as such gas may deteriorate
the solderability of external electrode.
• Avoid storage near strong magnetic field, as such condition may magnetize the product.

© KEMET Electronics Corporation • P.O. Box 5928 • Greenville, SC 29606 • 864-963-6300 • www.kemet.com LF0006_SC-J • 3/28/2017 3

Downloaded from Arrow.com.

Type 940C, Polypropylene Capacitors, for Pulse, Snubber
High dV/dt for Snubber Applications

Type 940 round, axial leaded film capacitors have polypropylene

film and dual metallized electrodes for both self healing
properties and high peak current carrying capability (dV/dt). This
series features low ESR characteristics, excellent high frequency
and high voltage capabilities.

Highlights
- High dV/dt
- High pulse current
- Low inductance
- Self healing

Specifications
Capacitance Range 0.01 to 4.7 µF
Capacitance Tolerance ±10 % (K) Standard; ±5% (J) Optional
Rated Voltage 600 to 3000 Vdc (275 to 500 Vac, 60 Hz)
Operating Temperature Range –55 ºC to 105 ºC*
*Full rated voltage at 85 ºC - derated linearly to 50% rated at 105 ºC
Maximum rms Current Check tables for values
Insulation Resistance > 100,000 MΩ x µF
Test Voltage between Terminals @ 25 ºC 160% rated DC voltage for 60 s
Test Voltage between Terminals & Case @ 25 ºC 3 kVac @ 50/60 Hz for 60 s
Life Test 2,000 h @ 85 ºC, 125% rated DC voltage
Life Expectancy 60,000 h @ rated Vdc, 70 ºC
30,000 h @ rated Vac, 70 ºC
RoHS Compliant

Dimensions Construction Diagram

Construction Details
Case Material UL510 Polyester Tape Wrap
Resin Material UL94V-0 Epoxy Fill
Terminal Material Tin Plated Copper

CDE Cornell Dubilier • 1605 E. Rodney French Blvd. • New Bedford, MA 02744 • Phone: (508)996-8561 • Fax: (508)996-3830
Type 940C, Polypropylene Capacitors, for Pulse, Snubber
High dV/dt for Snubber Applications
Part Numbering System
940 C 6 P 22 K –F

Capacitance RoHS
Compliant
Termination Capacitance Tolerance
Significant Indicator
Series Code Voltage Code Decimal Point figures in µF Code
940 C =Tinned Copper Wire 6 = 600 Vdc 16 = 1600 Vdc S = 0.0 K = ±10%
F = Insulated Stranded 8 = 800 Vdc 20 = 2000 Vdc P = 0. J = ±5%
Wire 10 = 1000 Vdc 30 = 3000 Vdc W = No decimal

Ratings H = Tinned Lugs 12 = 1200 Vdc point

NOTE: Other ratings, sizes and performance specifications are available. Contact us.
IRMS
Catalog Typical Typical 70 ºC
Cap. Part Number D L d ESR ESL dV/dt I peak 100 kHz
(µF) mm mm mm (mΩ) (nH) V/µs (A) (A)
600 Vdc (275 Vac)
.10 940C6P1K-F 9.0 34.0 0.8 28 19 196 20 2.5
.15 940C6P15K-F 10.5 34.0 0.8 13 20 196 29 4.0
.22 940C6P22K-F 11.5 34.0 0.8 12 20 196 43 4.4
.33 940C6P33K-F 13.5 34.0 0.8 9 21 196 65 5.6
.47 940C6P47K-F 15.5 34.0 1.0 7 22 196 92 6.9
.68 940C6P68K-F 18.0 34.0 1.0 6 23 196 134 8.1
1.00 940C6W1K-F 21.0 34.0 1.0 6 24 196 196 8.9
1.50 940C6W1P5K-F 25.0 34.0 1.2 5 26 196 295 10.9
2.00 940C6W2K-F 23.5 46.0 1.2 5 31 128 255 11.8
3.30 940C6W3P3K-F 27.0 54.0 1.2 4 36 105 346 15.3
4.70 940C6W4P7K-F 31.5 54.0 1.2 4 38 105 492 16.8
850 Vdc (450 Vac)
.15 940C8P15K-F 13.0 34.0 0.8 8 21 713 107 5.8
.22 940C8P22K-F 15.5 34.0 1.0 8 22 713 157 6.4
.33 940C8P33K-F 18.0 34.0 1.0 7 23 713 235 7.5
.47 940C8P47K-F 21.0 34.0 1.0 5 24 713 335 9.8
.68 940C8P68K-F 24.5 34.0 1.2 4 26 713 485 12.0
1.00 940C8W1K-F 22.5 46.0 1.2 5 30 400 400 11.5
1.50 940C8W1P5K-F 27.0 46.0 1.2 4 32 400 600 14.3
2.00 940C8W2K-F 30.5 46.0 1.2 3 34 400 800 17.9
2.20 940C8W2P2K-F 32.0 46.0 1.2 3 34 400 880 18.4
2.50 940C8W2P5K-F 34.0 46.0 1.2 3 35 400 1000 19.1
1000 Vdc (500 Vac)
.15 940C10P15K-F 15.0 34.0 1.0 7 22 856 128 6.7
.22 940C10P22K-F 17.5 34.0 1.0 7 23 856 188 7.4
.33 940C10P33K-F 20.5 34.0 1.0 6 24 856 283 8.8
.47 940C10P47K-F 24.0 34.0 1.2 5 26 856 402 10.6
.68 940C10P68K-F 28.0 34.0 1.2 5 27 856 582 11.7
1.00 940C10W1K-F 26.0 46.0 1.2 5 32 480 480 12.5
1.50 940C10W1P5K-F 31.0 46.0 1.2 4 34 480 720 15.6
2.00 940C10W2K-F 35.5 46.0 1.2 3 36 480 960 19.6

CDE Cornell Dubilier • 1605 E. Rodney French Blvd. • New Bedford, MA 02744 • Phone: (508)996-8561 • Fax: (508)996-3830
Type 940C, Polypropylene Capacitors, for Pulse, Snubber
High dV/dt for Snubber Applications

RMS Voltage vs Frequency @ 25 ºC

940C/ 941C - 600 Vdc 940C/ 941C - 850 Vdc

300 500

250
400

200
300

Vrms
Vrms

150 0.1 µF
0.47 µF 0.15 µF
1 µF 200 0.68 µF
100 2.2 µF

100
50

0 0
10 100 1000 10000 100000 10 100 1000 10000 100000
Frequency (Hz) Frequency (Hz)

940C/ 941C - 1000 Vdc 940C/ 941C - 1200 Vdc

600 600

500 500

400 400
Vrms
Vrms

300 300
0.15 µF 0.1 µF
0.47 µF 0.47 µF
200 2 µF 200 1 µF

100 100

0 0
10 100 1000 10000 100000 10 100 1000 10000 100000
Frequency (Hz) Frequency (Hz)

940C/ 941C - 1600 Vdc 940C/ 941C - 2000 Vdc

600 600

500 500

400 400
Vrms

Vrms

300 300
0.1 µF 0.022 µF
0.47 µF 0.22 µF
200 1.5 µF 200 1 µF

100 100

0 0
10 100 1000 10000 100000 10 100 1000 10000 100000
Frequency (Hz) Frequency (Hz)

CDE Cornell Dubilier • 1605 E. Rodney French Blvd. • New Bedford, MA 02744 • Phone: (508)996-8561 • Fax: (508)996-3830